JP5213206B2 - 粘土薄膜の製造方法及び粘土薄膜 - Google Patents
粘土薄膜の製造方法及び粘土薄膜 Download PDFInfo
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- JP5213206B2 JP5213206B2 JP2005275533A JP2005275533A JP5213206B2 JP 5213206 B2 JP5213206 B2 JP 5213206B2 JP 2005275533 A JP2005275533 A JP 2005275533A JP 2005275533 A JP2005275533 A JP 2005275533A JP 5213206 B2 JP5213206 B2 JP 5213206B2
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- B28B1/00—Producing shaped prefabricated articles from the material
- B28B1/30—Producing shaped prefabricated articles from the material by applying the material on to a core or other moulding surface to form a layer thereon
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
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Landscapes
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- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
Description
(ペースト作製工程)
本発明において、粘土ペーストとは、粘土または粘土と添加剤を、水、有機溶剤、又は水と有機溶剤との混合溶媒よりなる分散媒に分散させた分散液であって、その固形分含有率(以下、「固液比」という。)が0.1〜90重量%のものをいう。より好ましい固液比は、1〜60重量%である。固液比は、粘土種類、溶媒種類によって、また塗布や乾燥工程によって上記の範囲で適宜最適な値が決定される。
上記のようにして作製された粘土ペーストは、次いで基材に塗布される。粘土ペーストを基材に塗布する方法としては、均一に塗布することができれば特に限定されるものではないが、例えば、エアドクターコーティング、ブレードコーティング、ナイフコーティング、リバースコーティング、トランスファロールコーティング、グラビアロールコーティング、キスコーティング、キャストコーティング、スプレーコーティング、スロットオリフィスコーティング、カレンダーコーティング、電着コーティング、ディップコーティング、ダイコーティング等のコーティング法、フレキソ印刷等の凸版印刷、ダイレクトグラビア印刷およびオフセットグラビア印刷等の凹版印刷、オフセット印刷等の平版印刷、スクリーン印刷等の孔版印刷等の印刷手法を用いることができる。また、ヘラや刷毛その他の道具を用いて気泡が入らないように、手作業で塗布することもできる。上記塗布手段で、粘土ペーストの塗布と同時に表面を平坦にすることもできる。
次に、平坦化工程において、基板上に作製された粘土ペースト膜の平坦化が行われる。平坦化は、例えば、粘土ペース塗膜を加熱し、粘土ペースト膜表面に圧力を負荷することによって行なう方法、粘土ペーストを塗布した後で、スムージングロール処理を行う方法、乾燥過程で鏡面仕上げを行う方法、例えば、平坦化された多筒式ドライヤーロール又はヤンキードライヤーロールを通す処理方法、その他の方法によって行うことができる。
乾燥工程は、塗布膜に含まれる水、有機溶剤及びその他の液状成分を除くことができれば特に限定されるものではない。例えば、強制対流型オーブン中で乾燥させる場合、乾燥条件については、温度条件が30℃から100℃であり、好ましくは50℃から70℃である。しかしながら、周囲の熱源から熱を供給することにより、開放系でも乾燥させることができる。赤外線などの熱線により乾燥させることも可能である。また、平坦化処理工程で述べたように、ドライヤーロールと接触させることにより平坦化と乾燥を同時に行うこともできる。乾燥に際して、乾燥温度が低すぎると、乾燥時間が長くなる可能性がある。一方、乾燥温度が高すぎると、急激な乾燥により粘土ペースト中の液の対流などが促進され、膜の均一性が失われる可能性がある。
本発明の粘土薄膜において、粘土の配合比率は、70重量パーセント〜100重量パーセントが好ましい。耐熱性、高温での耐久性を付与したい場合は、より100重量パーセントに近い粘土の配合であることが好ましい。柔軟性や透明性等を付与したい場合には、そのような機能を付与する添加剤の粘土への添加量を増加すればよい。粘土の配合比率は耐熱性、柔軟性、透明性等のバランスを考えて、上記範囲の中で任意に調整すればよい。
粘土として、1gの合成スメクタイト(スメクトンSA、クニミネ工業株式会社製)を60cm3の蒸留水に加え、プラスチック製密封容器に、ポリフッ化エチレン製回転子と共に入れ、25℃で30分間激しく振とうし、均一な分散液を得た。この分散液を、50℃の条件下で徐々に乾燥させ、固液比約6重量%の粘土ペーストを得た。基材として、表面粗さRaが10nmのポリエチレンテレフタレートフィルムを用い、その上にアプリケーターを用いて粘土ペーストを塗布し、平坦化処理をせずに、その後60℃で5時間乾燥して、厚さ100μmの粘度薄膜を得た。
粘土として、1gの天然モンモリロナイト(クニピアP、クニミネ工業株式会社製)を60cm3の蒸留水に加え、プラスチック製密封容器に、ポリフッ化エチレン製回転子とともに入れ、25℃で30分間激しく振とうし、均一な分散液を得た。この分散液を、50℃の条件下で徐々に乾燥させ、固液比約6重量%の粘土ペーストを得た。基材として、表面粗さRaが10nmであるポリエチレンテレフタレートフィルムを用い、その上にアプリケーターを用いて粘土ペーストを塗布し、平坦化処理をせずに、その後60℃で5時間乾燥して、厚さ100μmの粘度薄膜を得た。
実施例および比較例で作製した粘土薄膜について、以下の評価を行った。
表面粗さの測定:原子間力顕微鏡(SPM400−AFM/エスアイアイ・ナノテクノロジー社製)を用い、粘土薄膜における乾燥後の大気との界面にあたる面のRa(算術平均表面粗さ)およびRy(最大高さ)を求めた。(測定範囲20×20μm)
光学特性:ヘーズメータ(Haze Meter NDH2000、日本電色社製)を用いて測定して、全光線透過率、ヘイズを求めた。
Claims (9)
- 粘土または粘土と添加剤からなり、粘土粒子が配向して積層した構造を有し、表面粗さRaの値が100nm以下、かつ、最大高さRyの値が500nm以下であり、全光線透過率が80%以上、かつ、ヘイズが5%以下である粘土薄膜の製造方法であって、粘土または粘土と添加剤を、水、有機溶剤、又は水と有機溶剤との混合溶媒よりなる分散媒に分散させ、粘土ペーストを作製するペースト作製工程と、該粘土ペーストを基材上に塗布し薄膜を形成する塗布工程と、該薄膜を平坦化する平坦化工程と、該薄膜から水、有機溶剤、又は水と有機溶剤を除去する乾燥工程と、該基材から該薄膜を剥離する剥離工程とを有しており、該平坦化工程が、表面粗さRaが100nm以下の平坦度を有するロールを用いて処理することからなることを特徴とする粘土薄膜の製造方法。
- 前記基材が長尺の形状を有するものであり、前記塗布工程、平坦化工程、乾燥工程が連続した工程からなることを特徴とする請求項1に記載の粘土薄膜の製造方法。
- 前記平坦化工程が、基材上の薄膜に圧力を負荷する工程、または、基材上の薄膜を加熱し、圧力を負荷する工程からなることを特徴とする請求項1または請求項2に記載の粘土薄膜の製造方法。
- 前記基材上の薄膜に圧力を負荷する工程が、スムーシングロール処理によることを特徴とする請求項3に記載の粘土薄膜の製造方法。
- 前記基材上の薄膜を加熱し、圧力を負荷する工程が、熱カレンダー処理またはスーパーカレンダー処理によることを特徴とする請求項3に記載の粘土薄膜の製造方法。
- 前記基材上の薄膜を加熱し、圧力を負荷する工程が、乾燥ロール処理によることを特徴とする請求項3に記載の粘土薄膜の製造方法。
- 前記基材の表面粗さRaが100nm以下であることを特徴とする請求項1乃至請求項6のいずれか1項に記載の粘土薄膜の製造方法。
- 粘土または粘土と添加剤からなり、粘土粒子が配向して積層した構造を有する粘土薄膜であって、該粘土薄膜の表面粗さRaの値が100nm以下、かつ、最大高さRyの値が500nm以下であり、全光線透過率が80%以上、かつ、ヘイズが5%以下であることを特徴とする粘土薄膜。
- 前記粘土薄膜が、長尺の形状を有することを特徴とする請求項8に記載の粘土薄膜。
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JP2005275533A JP5213206B2 (ja) | 2005-09-22 | 2005-09-22 | 粘土薄膜の製造方法及び粘土薄膜 |
EP06798101A EP1944270A4 (en) | 2005-09-22 | 2006-09-19 | METHOD FOR PRODUCING THIN FILM OF SOUND AND THIN FILM OF SOUND |
KR1020087009417A KR100992941B1 (ko) | 2005-09-22 | 2006-09-19 | 점토 박막의 제조방법 및 점토 박막 |
CN2006800344525A CN101268013B (zh) | 2005-09-22 | 2006-09-19 | 粘土薄膜的制造方法及粘土薄膜 |
US12/067,338 US8197741B2 (en) | 2005-09-22 | 2006-09-19 | Method for producing clay thin film |
PCT/JP2006/318490 WO2007034772A1 (ja) | 2005-09-22 | 2006-09-19 | 粘土薄膜の製造方法及び粘土薄膜 |
TW095134817A TWI331555B (en) | 2005-09-22 | 2006-09-20 | Clay membrane and method of manufacturing the same |
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JP5213206B2 (ja) * | 2005-09-22 | 2013-06-19 | 株式会社巴川製紙所 | 粘土薄膜の製造方法及び粘土薄膜 |
JP4899124B2 (ja) * | 2006-11-30 | 2012-03-21 | 独立行政法人産業技術総合研究所 | 積層粘土膜の製造方法 |
TWI447180B (zh) * | 2007-11-13 | 2014-08-01 | Tomoegawa Co Ltd | 黏土分散液及其製造方法,以及黏土薄膜 |
JP5016646B2 (ja) * | 2008-09-17 | 2012-09-05 | ニチアス株式会社 | 耐熱ロール、その製造方法及びこれを使用した板ガラスの製造方法 |
JP5437751B2 (ja) * | 2008-09-19 | 2014-03-12 | 旭化成株式会社 | 層状無機化合物を含有する分散体及びその製造方法 |
JP5563289B2 (ja) | 2009-12-24 | 2014-07-30 | 株式会社巴川製紙所 | 粘土膜複合体 |
US9228113B2 (en) | 2010-06-03 | 2016-01-05 | National Institute Of Advanced Industrial Science And Technology | Water vapor barrier film and method for producing same |
US8449972B2 (en) | 2010-07-21 | 2013-05-28 | E I Du Pont De Nemours And Company | Phyllosilicate composites containing mica |
US8580389B2 (en) | 2010-07-21 | 2013-11-12 | E. I. Dupont De Nemours And Company | Articles comprising phyllosilicate composites containing mica |
US8652647B2 (en) | 2010-07-21 | 2014-02-18 | E I Du Pont De Nemours And Company | Articles comprising phyllosilicate composites containing mica |
US8563125B2 (en) | 2010-07-21 | 2013-10-22 | E I Du Pont De Nemours And Company | Phyllosilicate composites containing MICA |
WO2012043971A2 (ko) * | 2010-09-29 | 2012-04-05 | 포항공과대학교 산학협력단 | 롤 형상의 모기판을 이용한 플렉서블 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 기판 |
JP5949184B2 (ja) * | 2012-06-06 | 2016-07-06 | 日立化成株式会社 | 光半導体装置の製造方法 |
CN105126641B (zh) * | 2015-08-04 | 2017-10-24 | 东华大学 | 一种柔性凹凸棒土膜及其制备方法 |
KR101884980B1 (ko) * | 2016-03-25 | 2018-08-30 | 단국대학교 산학협력단 | 종이기판을 포함하는 전극 구조체, 그 제조방법 |
CN107459045B (zh) * | 2017-07-26 | 2020-11-24 | 华南理工大学 | 一种黏土薄膜及其制备方法 |
JP7110709B2 (ja) * | 2018-05-09 | 2022-08-02 | 凸版印刷株式会社 | ガスバリア性フィルム |
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US4851021A (en) * | 1987-02-17 | 1989-07-25 | Armstrong World Industries, Inc. | Multi-ply composites and sheets of epoxy and flocced 2:1 layered silicates and methods for them |
US5336348A (en) | 1992-12-16 | 1994-08-09 | W. R. Grace & Co.-Conn. | Method for forming a vermiculite film |
DE10051388B4 (de) * | 1999-10-18 | 2009-02-12 | Murata Mfg. Co., Ltd., Nagaokakyo-shi | Verfahren zur Herstellung einer keramischen Grünfolie und Verfahren zur Herstellung eines keramischen Vielschichtbauelements |
KR20020005330A (ko) | 2000-07-10 | 2002-01-17 | 김순택 | 라미네이팅 장치 |
EP1679285B1 (en) | 2003-09-08 | 2016-02-03 | National Institute of Advanced Industrial Science and Technology | Clay film |
JP3855003B2 (ja) * | 2003-09-08 | 2006-12-06 | 独立行政法人産業技術総合研究所 | 粘土配向膜及びその製造方法 |
US8178194B2 (en) * | 2004-12-10 | 2012-05-15 | National Institute Of Advanced Industrial Science And Technology | Clay film product |
JP5213206B2 (ja) * | 2005-09-22 | 2013-06-19 | 株式会社巴川製紙所 | 粘土薄膜の製造方法及び粘土薄膜 |
US7898636B2 (en) * | 2005-09-22 | 2011-03-01 | Tomoegawa Co., Ltd. | Clay thin film substrate, clay thin film substrate with electrode, and display device using the same |
TWI447180B (zh) * | 2007-11-13 | 2014-08-01 | Tomoegawa Co Ltd | 黏土分散液及其製造方法,以及黏土薄膜 |
US8206814B2 (en) * | 2008-02-11 | 2012-06-26 | National Institute Of Advanced Industrial Science And Technology | Film made from denatured clay |
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EP1944270A1 (en) | 2008-07-16 |
WO2007034772A1 (ja) | 2007-03-29 |
CN101268013B (zh) | 2011-02-16 |
KR100992941B1 (ko) | 2010-11-08 |
TW200728044A (en) | 2007-08-01 |
US8197741B2 (en) | 2012-06-12 |
EP1944270A4 (en) | 2012-01-11 |
CN101268013A (zh) | 2008-09-17 |
TWI331555B (en) | 2010-10-11 |
KR20080049835A (ko) | 2008-06-04 |
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JP2007084386A (ja) | 2007-04-05 |
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