JP4991173B2 - 発光素子搭載用基体ならびにこれを用いた発光装置 - Google Patents
発光素子搭載用基体ならびにこれを用いた発光装置 Download PDFInfo
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- JP4991173B2 JP4991173B2 JP2006086281A JP2006086281A JP4991173B2 JP 4991173 B2 JP4991173 B2 JP 4991173B2 JP 2006086281 A JP2006086281 A JP 2006086281A JP 2006086281 A JP2006086281 A JP 2006086281A JP 4991173 B2 JP4991173 B2 JP 4991173B2
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- light
- emitting element
- light emitting
- metal body
- sealing member
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Led Device Packages (AREA)
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Description
さらに、多孔質な無機材料から成る部分を有する第1の部位における発光素子の搭載面側とは反対の面を覆う封止樹脂から成る第2の部位を備えていることから、封止部材の封止性を高めることができる。
なお、反射率は、分光測色計(ミノルタ製CM−3700D)により測定した。得られたサンプルにキセノンランプの光を入射してサンプル表面で反射させ、その反射光の強度を測定波長400nmまたは600nmについて測定し入射光と反射光の強度比を取り反射率としている。
また、多孔質な無機材料3Bは、図10に示す断面図のように、封止部材3の搭載面側に透明部材8Aが被着されていることがより好ましい。これにより、上記の多孔質な無機材料3Bをその搭載面側で封止することができる。これによって、例えば、発光素子6を覆うように塗布された未硬化の透明樹脂層4が、多孔質な無機材料3Bに浸透することを抑制できる。その結果、多孔質な無機材料3Bの間隙3A内に浸透した透明樹脂層4によって、多孔質な無機材料3Bと間隙3Aとの屈折率差が小さくなってしまい、透明樹脂層4と多孔質な無機材料3Bとの界面で光が効率よく上方に反射されにくくなるのに対し、発光素子6から発せられ、封止部材3によって反射されて発光装置の外部に放射される光が減少してしまうことがない。したがって、封止部材3の搭載面側に透明部材8Aが被着されていることにより、封止部材3によって反射される光が増加し、発光装置の光出力および発光効率は向上する。
1a:突出部
1b:傾斜面
1b−A:肩部
2:支持金属体
2a:突起
3:封止部材
3a:透明樹脂
3b:粒状体
3A:間隙(気孔)
3B:無機材料
4:透明樹脂層
5:透光性樹脂層
5a:蛍光体
6:発光素子
7:ボンディングワイヤ
A:発光素子搭載用基体
B:発光装置
C:螺条
8A:透明部材
9:空隙
Claims (15)
- 環状金属体と、該環状金属体の内側に設置され、上端面が発光素子搭載部とされた支持金属体と、該支持金属体および前記環状金属体の間に配置された封止部材とを具備し、
前記封止部材が、少なくとも前記発光素子搭載部の周囲に配される搭載面側が多孔質な無機材料から成る第1の部位、および該第1の部位における前記搭載面側とは反対側の面を覆う封止樹脂から成る第2の部位を備えていることを特徴とする発光素子搭載用基体。 - 前記第1の部位が、前記発光素子搭載部の周囲に配される搭載面側に位置して多孔質な無機材料から成る部分と、この部分における前記搭載面側とは反対側に形成された金属、セラミックスまたは樹脂から成る部分とを有することを特徴とする請求項1記載の発光素子搭載用基体。
- 前記封止部材は、その気孔率が15〜43%であることを特徴とする請求項1または請求項2記載の発光素子搭載用基体。
- 前記封止部材の前記搭載面側に透明部材が被着されていることを特徴とする請求項1乃至請求項3のいずれかに記載の発光素子搭載用基体。
- 前記透明部材と前記無機材料との間に空隙が設けられていることを特徴とする請求項4記載の発光素子搭載用基体。
- 前記空隙に不活性ガスが封入されていることを特徴とする請求項5記載の発光素子搭載用基体。
- 前記無機材料は、酸化チタン,酸化ジルコニウム,酸化アルミニウム,酸化亜鉛,酸化カルシウム,酸化マグネシウム,硫酸バリウムから選ばれた1種またはこれらの混合物を含むことを特徴とする請求項1乃至請求項6のいずれかに記載の発光素子搭載用基体。
- 前記無機材料は、酸化アルミニウム,酸化珪素,酸化カルシウム,酸化マグネシウムの混合物を主成分とすることを特徴とする請求項1乃至請求項6のいずれかに記載の発光素子搭載用基体。
- 前記環状金属体は、その上面外周部に全周にわたって突出部が設けられていることを特徴とする請求項1乃至請求項8のいずれかに記載の発光素子搭載用基体。
- 前記突出部は、その内側面が下端から上端に向かうに伴って外側に広がる傾斜面とされていることを特徴とする請求項9記載の発光素子搭載用基体。
- 前記環状金属体は、その外周面の下端から上方に向けて螺条が形成されていることを特徴とする請求項1乃至請求項10のいずれかに記載の発光素子搭載用基体。
- 請求項1乃至請求項11のいずれかに記載の発光素子搭載用基体と、前記発光素子搭載部に搭載されるとともに前記支持金属体および前記環状金属体に電気的に接続された発光素子と、該発光素子を覆うように設けられた透明樹脂層とを具備していることを特徴とする発光装置。
- 前記透明樹脂層を覆うように配置されるとともに、蛍光体を含有して成る透光性樹脂層が設けられていることを特徴とする請求項12記載の発光装置。
- 前記透光性樹脂層は、その表面が上方に向けて凸の曲面であることを特徴とする請求項13記載の発光装置。
- 前記透光性樹脂層は、その中央部が外周部よりも厚いことを特徴とする請求項13または請求項14記載の発光装置。
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JP2006086281A JP4991173B2 (ja) | 2005-04-27 | 2006-03-27 | 発光素子搭載用基体ならびにこれを用いた発光装置 |
US11/411,942 US7491000B2 (en) | 2005-04-27 | 2006-04-27 | Base structure for light emitting device and light emitting device using the same |
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JP2006086281A JP4991173B2 (ja) | 2005-04-27 | 2006-03-27 | 発光素子搭載用基体ならびにこれを用いた発光装置 |
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