JP4907912B2 - Novel 1,3,5-triphenylbenzene derivative and organic electroluminescence device containing the same - Google Patents
Novel 1,3,5-triphenylbenzene derivative and organic electroluminescence device containing the same Download PDFInfo
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- JP4907912B2 JP4907912B2 JP2005200908A JP2005200908A JP4907912B2 JP 4907912 B2 JP4907912 B2 JP 4907912B2 JP 2005200908 A JP2005200908 A JP 2005200908A JP 2005200908 A JP2005200908 A JP 2005200908A JP 4907912 B2 JP4907912 B2 JP 4907912B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
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- H—ELECTRICITY
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
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- H—ELECTRICITY
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- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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Description
本発明は、新規なリン光材料、とくに青色リン光材料に適したワイドギャップな電子輸送層を形成するのに有用な新規な1,3,5−トリフェニルベンゼン誘導体およびそれを含む有機エレクトロルミネッセンス素子に関する。
The present invention relates to a
有機EL素子は、電極から注入されたホールと電極の再結合によって生成した励起エネルギーが発光過程を経て基底状態に緩和されることにより自発光する。しかしながら、ホールと電子の再結合によって生成する励起状態には一重項励起状態と三重項励起状態の2種類がそれぞれ1対3の割合で存在する。これまでの多くは一重項励起状態からの発光を利用した蛍光材料が発光材料に利用されていたため、内部量子効率が最大で25%であるので、この時取り出し効率を20%とすると、最大外部量子効率は5%が理論限界であった。 The organic EL element emits light when excitation energy generated by recombination of holes injected from the electrode and the electrode is relaxed to a ground state through a light emission process. However, there are two types of excited states generated by recombination of holes and electrons, a singlet excited state and a triplet excited state, in a ratio of 1: 3. In many cases, a fluorescent material utilizing light emission from a singlet excited state has been used as a light emitting material, and therefore, the internal quantum efficiency is 25% at the maximum. The quantum efficiency was the theoretical limit of 5%.
近年、イリジウムやプラチナなどの重原子効果を利用した錯体化合物を用い三重項励起状態からの発光、すなわちリン光発光を用いることにより発光効率の向上が報告されるようになった(例えば、非特許文献1)。一重項励起状態に加え、三重項励起状態からの発光を利用することで最大内部量子効率は理論上100%に到達することが可能で、リン光材料は発光材料として注目を浴びている。 In recent years, improvement in luminous efficiency has been reported by using light emission from a triplet excited state, that is, phosphorescence emission, using a complex compound utilizing a heavy atom effect such as iridium or platinum (for example, non-patented) Reference 1). The maximum internal quantum efficiency can theoretically reach 100% by utilizing light emission from the triplet excited state in addition to the singlet excited state, and phosphorescent materials are attracting attention as light emitting materials.
例えば緑色材料として、下記式
また安達らによる非特許文献2などにより青色発光材料である下記式
その結果最近ではS.R.Forrestらによる非特許文献3では下記式
これら発光材料を効率よく発光させるにはホールと電子の注入バランスを整えて、発光層の中で十分にこれらのキャリアーの結合が行えるようにホール輸送剤や電子輸送剤などを選択しなければならない。
特に青色リン光材料についてはエネルギーギャップが大きいためにワイドギャップ化されたホール輸送剤や電子輸送剤が必要になってくる。現在これらリン光材料については、電子輸送材料に従来から使用されているAlq3〔トリス(8−キノリノラト)アルミニウム〕やBAlq2〔ビス(2−メチル−8−キノリノラト)アルミニウムp−フェニルフェノラート〕等が使用されているが、リン光材料に使用するには十分なエネルギーギャップを持ち合わせていないため新規なワイドギャップな電子輸送材料の開発が必要である。
In particular, since the blue phosphorescent material has a large energy gap, a hole transport agent and an electron transport agent having a wide gap are required. As for these phosphorescent materials, Alq 3 [tris (8-quinolinolato) aluminum] and BAlq 2 [bis (2-methyl-8-quinolinolato) aluminum p-phenylphenolate] conventionally used for electron transport materials. However, since it does not have a sufficient energy gap for use in phosphorescent materials, it is necessary to develop a new wide-gap electron transport material.
本発明の第1の目的は、新規な1,3,5−トリフェニルベンゼン誘導体を提供する点にある。本発明の第2の目的は、それを用いた新規な有機エレクトロルミネッセンス素子を提供する点にある。
The first object of the present invention is to provide a
本発明の第1は、下記一般式(1)で示される1,3,5−トリフェニルベンゼン誘導体に関する。
本発明の第2は、請求項1記載の1,3,5−トリフェニルベンゼン誘導体を含有することを特徴とする有機エレクトロルミネッセンス素子に関する。
本発明の第3は、請求項1記載の1,3,5−トリフェニルベンゼン誘導体を電子輸送材料として使用したことを特徴とする有機エレクトロルミネッセンス素子に関する。
The first of the present invention relates to a 1,3,5-triphenylbenzene derivative represented by the following general formula (1) .
The second invention relates to an organic electroluminescent device characterized by containing the
The third invention relates to an organic electroluminescent device, characterized in that using the
本発明化合物の合成方法の1つを下記反応式で示す。
本発明における代表的な化合物を下記に示す。
また本発明のその他の化合物例を以下に示す。
(1)本発明により、新規な1,3,5−トリフェニルベンゼン誘導体を提供することができた。
(2)本発明の1,3,5−トリフェニルベンゼン誘導体を用いることにより、新規な有機エレクトロルミネッセンス素子を提供することができた。
(1) According to the present invention, a
( 2 ) A novel organic electroluminescence device could be provided by using the 1,3,5-triphenylbenzene derivative of the present invention.
以下に合成例、実施例を示すが、本発明はこれにより何ら限定されるものではない。 Synthesis Examples and Examples are shown below, but the present invention is not limited thereto.
合成例1
(1)1,3,5−トリス(m−ブロモフェニル)ベンゼン{1,3,5−tris(m−bromophenyl)benzene(TmBrPhB)}の合成
THF/n−ヘキサンによる再結晶を行い、白い固体の1,3,5−トリス(m−ブロモフェニル)ベンゼン{1,3,5−tris(m−bromophenyl)benzene(TmBrPhB)}を得た。収率:82.1mol%。
構造確認は1HNMRで行った。
Synthesis example 1
(1) Synthesis of 1,3,5-tris (m-bromophenyl) benzene {1,3,5-tris (m-bromophenyl) benzene (TmBrPhB)}
Recrystallization with THF / n-hexane gave 1,3,5-tris (m-bromophenyl) benzene {1,3,5-tris (m-bromophenyl) benzene (TmBrPhB)} as a white solid. Yield: 82.1 mol%.
The structure was confirmed by 1 HNMR.
(2)1,3,5−トリ〔m−(4−イソキノリル)フェニル〕ベンゼン(TmiQPhB)の合成
精製はカラムクロマトグラフィー法(展開溶媒:クロロホルム/酢酸エチル/メタノル=15/5/1)を二回行い、薄い黄色の固体を得た。収率:54.7mol%。
構造確認は1HNMRで行った。電気化学的特性および熱特性を後記表1に示す。
(2) Synthesis of 1,3,5-tri [m- (4-isoquinolyl) phenyl] benzene (TmiQPhB)
Purification was performed twice by column chromatography (developing solvent: chloroform / ethyl acetate / methanol = 15/5/1) to obtain a pale yellow solid. Yield: 54.7 mol%.
The structure was confirmed by 1 HNMR. The electrochemical characteristics and thermal characteristics are shown in Table 1 below.
合成例2
(1)5−(3−クロロフェニル)ピリミジン(CPh5Pm)の合成
精製はカラムクロマトグラフィー法(展開溶媒:n−ヘキサン/酢酸エチル=1/1)を行い、白い固体を得た。収率:95.0mol%。
構造確認は1HNMRで行った。
Synthesis example 2
(1) Synthesis of 5- (3-chlorophenyl) pyrimidine (CPh5Pm)
Purification was performed by column chromatography (developing solvent: n-hexane / ethyl acetate = 1/1) to obtain a white solid. Yield: 95.0 mol%.
The structure was confirmed by 1 HNMR.
(2)5−{3−(4,4,5,5−テトラメチル−1,3,2−ジオキサボラン−2−イル)フェニル}ピリミジン(5PmPhDOB)の合成
精製はカラムクロマトグラフィー法〔展開溶媒:n−ヘキサン/酢酸エチル=2/1(1回);クロロホルム/酢酸エチル=6/1(2回)〕を行い、薄い黄色の粘体を得た。収率:46.5mol%。
構造確認は1HNMRで行った。
(2) Synthesis of 5- {3- (4,4,5,5-tetramethyl-1,3,2-dioxaboran-2-yl) phenyl} pyrimidine (5PmPhDOB)
Purification was performed by column chromatography [developing solvent: n-hexane / ethyl acetate = 2/1 (once); chloroform / ethyl acetate = 6/1 (once)] to obtain a pale yellow viscous body. Yield: 46.5 mol%.
The structure was confirmed by 1 HNMR.
(3)1,3,5−トリ〔m−(5−ピリミジニル)フェニル〕ベンゼン(Tm5PmPhB)の合成
精製はカラムクロマトグラフィー法(展開溶媒:クロロホルム/酢酸エチル=1/1;酢酸エチル;クロロホルム/メタノール=25/1)を行い、n−ヘキサンによる再結晶を行い白色の粉末を得た。収率:40.0mol%。
構造確認は1HNMRで行った。電気化学的特性および熱特性を後記表1に示す。
(3) 1,3,5-tri [m-(5-pyrimidine d) phenyl] Synthesis benzene (Tm5PmPhB)
Purification was performed by column chromatography (developing solvent: chloroform / ethyl acetate = 1/1; ethyl acetate; chloroform / methanol = 25/1) and recrystallized with n-hexane to obtain a white powder. Yield: 40.0 mol%.
The structure was confirmed by 1 HNMR. The electrochemical characteristics and thermal characteristics are shown in Table 1 below.
Tg(ガラス転移温度)については、DSC(Diffirential Scanning Calorimeter 示差熱量計)中にサンプルを加え、溶融させたものを急冷し、2〜3回繰り返すとガラス転移を表すカーブがチャート上に現れるので、そのカーブを接線で結び、その交点の温度をTgとして採用する。
Tm(融点)は、同じくDSCにサンプルを加え、昇温していくと吸熱カーブが現れるのでその極大のところとの温度を読んで、その温度をTmとする。
Td(分解温度)は、DTA(Differential thermal analyzer 示差熱分析装置)にサンプルを加え、加熱していくとサンプルが熱によって分解し、重量が減少しだす。その減少を開始しだしたところの温度を読んで、その温度をTdとする。
エネルギーギャップ(Eg)については、蒸着機で作成した薄膜を紫外−可視吸光度計で薄膜の吸収曲線を測定する。その薄膜の短波長側の立ち上がりの所に接線を引き、求まった交点の波長を次の式に代入し目的の値を求める。それによって得た値がEgになる。
Eg=1240÷nm
例えば接線を引いて求めた値が470nmだったとしたらこの時のEgの値は
Eg=1240÷470=2.63(eV)
と言うことになる。
Ip(イオン化ポテンシャル)は、イオン化ポテンシャル測定装置(例えば理研計器AC−1)を使用して測定し、測定するサンプルがイオン化を開始しだしたところの電圧(eV)の値を読む。
Ea(電子親和力)は、IpからEgを引いた値である。
本明細書における波長に対する強度(intensity a.u.)の測定は、浜松ホトニクス社製ストリークカメラを用いて、クライオスタット中で4.2kにおいて測定した。
About Tg (glass transition temperature), a sample is added to DSC (Differential Scanning Calorimeter), the melted material is rapidly cooled, and a curve representing the glass transition appears on the chart when repeated 2-3 times. The curves are connected by a tangent line, and the temperature at the intersection is adopted as Tg.
As for Tm (melting point), an endothermic curve appears when a sample is added to the DSC and the temperature is raised.
As for Td (decomposition temperature), when a sample is added to DTA (Differential Thermal Analyzer) and heated, the sample is decomposed by heat and the weight starts to decrease. The temperature at which the decrease starts is read and the temperature is defined as Td.
Regarding the energy gap (Eg), an absorption curve of the thin film prepared with a vapor deposition machine is measured with an ultraviolet-visible absorptiometer. A tangent line is drawn at the rising edge of the thin film on the short wavelength side, and the target wavelength is obtained by substituting the obtained intersection wavelength into the following equation. The value obtained thereby becomes Eg.
Eg = 1240 ÷ nm
For example, if the value obtained by drawing a tangent is 470 nm, the value of Eg at this time is Eg = 1240 ÷ 470 = 2.63 (eV)
It will be said.
Ip (ionization potential) is measured using an ionization potential measuring apparatus (for example, Riken Keiki AC-1), and the value of the voltage (eV) at which the sample to be measured starts ionization is read.
Ea (electron affinity) is a value obtained by subtracting Eg from Ip.
Intensity au in this specification was measured at 4.2 k in a cryostat using a streak camera manufactured by Hamamatsu Photonics.
実施例1
TmiQPhBを電子輸送層として有機EL素子へ応用
素子構造:
ITO/α−NPD(50nm)/Alq3(40nm)/TmiQPhB(30nm)/LiF(0.5nm)/Al(100nm);(実施例1)
この素子の物性データを表2〜4に示す。
Example 1
Application structure to organic EL device using TmiQPhB as electron transport layer:
ITO / α-NPD (50 nm) / Alq 3 (40 nm) / TmiQPhB (30 nm) / LiF (0.5 nm) / Al (100 nm); (Example 1 )
Physical property data of the element of this is shown in Table 2-4 a.
Max.P.E.は、最大視感効率
Max.C.E.は、最大電流効率
Max.Q.E.は、最大外部量子効率
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