JP4735305B2 - Triaxial magnetic sensor and manufacturing method thereof - Google Patents

Description

  The present invention relates to a three-axis magnetic sensor capable of detecting changes in a magnetic field in the X-axis direction, a magnetic field in the Y-axis direction, and a magnetic field in the Z-axis direction, and in particular, a group of a plurality of giant magnetoresistive effect elements is bridged. The present invention relates to a three-axis magnetic sensor provided with three sets of connected magnetic sensors in one substrate, and a method for manufacturing the same.

  Conventionally, giant magnetoresistive elements (GMR elements), magnetic tunnel effect elements (TMR elements), and the like are known as elements used in magnetic sensors. These magnetoresistive elements include a pinned layer whose magnetization direction is pinned (fixed) in a predetermined direction, and a free layer whose magnetization direction changes according to an external magnetic field. A resistance value corresponding to the relative relationship between the direction and the magnetization direction of the free layer is shown as an output. As a magnetic sensor using such a magnetoresistive effect element, for example, Patent Document 1 (Japanese Patent No. 3498737) and Patent Document 2 (Japanese Patent Laid-Open No. 2002-299728) have been proposed.

  In the magnetic sensors proposed in Patent Document 1 and Patent Document 2, the magnetoresistive elements are orthogonal to each other so as to detect magnetic field changes in two orthogonal directions (X-axis direction and Y-axis direction). In order to detect an external magnetic field in a two-dimensional plane by obtaining an output (change in resistance value) of each element by bridging each element as a group of several elements. .

By the way, there is a case where it is necessary to obtain a direction in space, that is, a direction in three dimensions, instead of a two-dimensional plane. In such an application, it is necessary to accurately determine the magnetic direction in three dimensions (X-axis direction, Y-axis direction, and Z-axis direction). However, since such a three-dimensional magnetic sensor capable of obtaining the orientation in three dimensions cannot be manufactured on the same substrate, a thin three-dimensional magnetic sensor has not been obtained at the present time.
Japanese Patent No. 3498737 JP 2002-299728 A

  Therefore, a three-axis magnetic sensor (three-dimensional magnetic sensor) in which two chips are mounted in an inclined manner has been proposed. In this three-axis magnetic sensor, as shown in the top view of FIG. 24A, two chips consisting of a square A chip and a B chip in a plan view are mounted in a package. Then, as shown in the side view of FIG. 24 (b), these two chips are arranged inclined by an angle θ from the horizontal plane, and the A chip has an X-axis sensor (ad) and a Y1-axis. Sensors (e to h) are built in, and Y2 axis sensors (i to l) are built in the B chip. Each sensor is composed of four GMR elements (ad, e to h, i to l), and each GMR element is formed along the side of the chip.

  In this case, as shown in FIG. 25A, the X-axis sensor is configured by bridge-connecting the GMR elements a to d. Further, as shown in FIG. 25B, the Y1-axis sensor is configured by bridge-connecting the GMR elements e to h. Further, as shown in FIG. 25 (c), the YMR sensor is configured by the bridge connection of the GMR elements i to l. The sensitivity direction of the GMR elements a to d constituting the X axis sensor is the X axis direction, the sensitivity direction of the GMR elements e to h constituting the Y1 axis sensor is the Y1 axis direction, and the GMR elements constituting the Y2 axis sensor. The sensitivity directions i to l are set to the Y2 axis direction.

  Thus, when a magnetic field is applied to the GMR elements constituting each sensor in the direction of the arrow in FIG. 24A, the resistance value decreases in proportion to the magnetic field strength. On the other hand, when a magnetic field is applied in the direction opposite to the arrow direction in FIG. 24A, the resistance value increases in proportion to the magnetic field strength. Here, each GMR element is bridge-connected as shown in FIGS. 25A, 25B, and 25C to form each sensor, and when a predetermined voltage (for example, 3 V) is applied between the power source and the ground, X Sx is output from the axis sensor, Sy1 is output from the Y1-axis sensor, and Sy2 is output from the Y2-axis sensor.

Based on the obtained output, the magnetic field component Hx in the X-axis direction can be obtained by the following equation (1). Similarly, the magnetic field component Hy in the Y-axis direction can be obtained from the following equation (2), and the magnetic field component Hz in the Z-axis direction can be obtained from the following equation (3).
Hx = 2kx × Sx (1)
Hy = ky (Sy1-Sy2) / cos θ (2)
Hz = kz (Sy1 + Sy2) / sin θ (3)
However, kx, ky, kz are proportional constants, and if the sensitivity of each sensor is equal, kx = ky = kz.

However, in the above-described three-axis magnetic sensor, since it is necessary to mount two chips consisting of an A chip and a B chip in the package, it is complicated and time-consuming to manufacture this type of sensor. Caused a problem. In addition, since it is necessary to use a special package, this type of sensor is expensive and difficult to downsize.
Accordingly, the present invention has been made to solve such problems, and provides a triaxial magnetic sensor having a structure that can be easily and easily manufactured in one chip (one substrate), and a method for manufacturing the same. For the purpose.

In order to achieve the above object, a three-axis magnetic sensor of the present invention includes an X-axis sensor in which a plurality of giant magnetoresistive elements are bridge-connected, and a Y1-axis sensor in which a plurality of giant magnetoresistive elements are bridge-connected. A Y2-axis sensor in which a plurality of giant magnetoresistive elements are bridge-connected is provided in one substrate. And a plurality of protrusions formed on the substrate such that the first inclined surface and the second inclined surface having the same angle and different inclination directions are back-to-back, and the same side or corner of the substrate on the plane of the substrate. Two groups of giant magnetoresistive effect element groups each composed of a plurality of giant magnetoresistive effect element bars arranged in a part, and a plurality of giant magnetoresistive effect element bars arranged at opposite sides or corners The two giant magnetoresistive effect element groups consisting of are magnetized in opposite directions, and the four giant magnetoresistive effect element groups are fully bridged to form an X-axis sensor. And two sets of giant magnetoresistive effect element groups comprising a plurality of giant magnetoresistive effect element bars formed on the first slope of the plurality of protrusions arranged on the same side or corner of the substrate, There is a side opposite to this Is the direction of magnetization of two sets of giant magnetoresistive effect element groups composed of a plurality of giant magnetoresistive effect element bars formed on the first inclined surfaces of the plurality of protrusions arranged at the corners with respect to the Y axis. These four groups of giant magnetoresistive elements are magnetized in opposite directions to form a full bridge connection to form a Y1-axis sensor, and are arranged on the same side or corner of the substrate. Two giant magnetoresistive effect element groups formed of a plurality of giant magnetoresistive effect element bars formed on the second slope of the protrusion, and a plurality of giant magnetoresistive effect element groups arranged on opposite sides or corners. Magnetization directions of two sets of giant magnetoresistive effect element groups formed by a plurality of giant magnetoresistive effect element bars formed on the second slope of the protrusion are magnetized in directions opposite to each other with respect to the Y axis. These four sets of giant magnetoresistive effect elements There wherein the full-bridge-connected to the Y2-axis sensor is formed.

Thereby , an accurate magnetic field in the three-dimensional direction of the X axis, the Y axis, and the Z axis can be measured. Since the X-axis sensor, the Y1-axis sensor, and the Y2-axis sensor are provided in one substrate, it is possible to prevent the occurrence of angular deviation as in a magnetic sensor formed by assembling separate sensors. In addition, an increase in the size of the sensor can be prevented, and a small three-axis magnetic sensor can be provided. In this case, since the Y1-axis sensor and the Y2-axis sensor are only formed on the slope provided on the substrate, the Y1-axis sensor and the Y2-axis sensor can be easily and easily fabricated on one substrate. Become.

  The magnetization direction of the pinned layer of the X-axis sensor is formed to be perpendicular to the longitudinal direction of each giant magnetoresistive element bar, and the magnetization direction of the pinned layer of the Y1-axis sensor is a direction along the first slope. The magnetization direction of the pinned layer of the Y2-axis sensor is in the direction along the second slope, and the longitudinal direction of each giant magnetoresistive element bar is It suffices if it is formed so as to be perpendicular to the direction. Alternatively, the magnetization direction of the pinned layer of the X-axis sensor is formed at a predetermined angle with respect to the longitudinal direction of each giant magnetoresistive element bar, and the magnetization direction of the pinned layer of the Y1-axis sensor is along the first slope. The magnetization direction of the pinned layer of the Y2-axis sensor is in the direction along the second slope, and the magnetization direction of each giant magnetoresistive element bar is You may form so that it may become a predetermined angle with respect to a longitudinal direction. In this case, the giant magnetoresistive effect element bar is preferably formed to have a predetermined angle with respect to each side of the substrate. Further, it is preferable that the giant magnetoresistive element bar is formed in parallel with each side of the substrate and at the four corners of the substrate.

Here, in the giant magnetoresistive effect element, a plurality of giant magnetoresistive effect element bars are arranged in parallel, and when adjacent giant magnetoresistive effect element bars are connected in series by a bias magnet film, A bias magnetic field can be easily applied to the free layer of the effect element bar. Note that the first slope and the second slope are preferably formed on the protrusions disposed on the substrate so as to be back to back .

And in order to manufacture the above-mentioned three-axis magnetic sensor, on the board | substrate provided with the several protrusion formed so that the 1st slope and 2nd slope from which an inclination direction differs in an equal angle may become back to back. A plurality of giant magnetoresistive effect element groups comprising a plurality of giant magnetoresistive effect element bars serving as X-axis sensors on opposite sides or corners of the substrate, and a plurality of protrusions a plurality of giant magnetoresistive effect element group comprising a plurality of giant magnetoresistive element bars comprising a first inclined surface Y1-axis sensors on the, the plurality of on the second inclined surfaces of the plurality of protrusions becomes Y2-axis sensor A giant magnetoresistive effect element group forming step for forming a plurality of giant magnetoresistive effect element groups each consisting of a giant magnetoresistive effect element bar, and two sets arranged on the same side or corner of the substrate on the plane of the substrate Giant magnetoresistive element group and the opposite While applying a magnetic field to the giant magnetoresistive elements formed on the substrate so that the magnetization directions of the sides or are arranged in the corners two pairs of giant magnetoresistive effect element group are magnetized in opposite directions to each other that It is only necessary to provide a regularized heat treatment step in which each of the giant magnetoresistive effect elements is heated and ordered heat treated at the same time.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to these embodiments, and may be modified as appropriate without departing from the scope of the present invention. Is possible. FIG. 1 is a diagram schematically showing a schematic configuration of the triaxial magnetic sensor of Example 1, FIG. 1 (a) is a plan view, and FIG. 1 (b) is an AA view of FIG. 1 (a). It is a sectional view showing a section. FIG. 2 is a diagram schematically showing a schematic configuration of a giant magnetoresistive effect element used in the triaxial magnetic sensor of the present invention. FIG. 2A shows a plurality of giant magnetoresistive effect element (GMR) bars. FIG. 2B is a plan view showing a state in which a giant magnetoresistive element for one X-axis sensor is configured, and FIG. 2B is a schematic cross-sectional view taken along the line BB ′ of FIG. FIG. 2C is a diagram schematically showing the stacked state inside FIG. 2B. FIG. 3 shows a state where a plurality of giant magnetoresistive effect element (GMR) bars are connected to form one giant magnetoresistive effect element for a Y1-axis sensor and one giant magnetoresistive effect element for a Y2-axis sensor. 3 (a) is a plan view thereof, and FIG. 3 (b) is a perspective view schematically showing a state in which a portion C of FIG. 3 (a) is viewed obliquely from above.

  4 is a diagram schematically showing the pinning direction and sensitivity direction of the three-axis magnetic sensor of FIG. 1, and FIG. 4 (a) is a plan view schematically showing the entire plane, and FIG. 4 (b). FIG. 4 is an enlarged perspective view schematically showing a D portion in FIG. 4A, and FIG. 4C is a perspective view schematically showing an enlarged E portion in FIG. 4A. . FIG. 5 is a block diagram showing the bridge connection, FIG. 5 (a) is a block diagram showing the bridge connection of the X-axis sensor, and FIG. 5 (b) is a block diagram showing the bridge connection of the Y1-axis sensor. FIG. 5C is a block diagram showing the bridge connection of the Y2-axis sensor. 6 to 15 are cross-sectional views schematically showing the triaxial magnetic sensor of Example 1 in the middle of manufacture. FIG. 16 is a plan view schematically showing a state of ordered heat treatment (pinning treatment). 17 is a view showing a yoke used in ordering heat treatment (pinning treatment), FIG. 17 (a) is a plan view schematically showing a part of the plane of the yoke, and FIG. 17 (b) is a view showing the yoke. It is sectional drawing which shows typically the state which performs regularization heat processing (pinning process) using it.

1. Example 1
As shown in FIG. 1, the triaxial magnetic sensor 10 according to the first embodiment has a square shape having sides along the X axis and the Y axis that are orthogonal to each other in plan view, and is orthogonal to the X axis and the Y axis. A substrate 11 made of quartz or silicon having a small thickness in the Z-axis direction is provided. On the substrate 11, four X-axis GMR elements 12a to 12d, Y1-axis GMR elements 12e to 12h (solid line portions indicating GMR bars described later in FIG. 1), and Y2-axis GMR elements 12i to 12h, respectively. A total of 12 GMR elements composed of 12l (broken line portions indicating GMR bars described later in FIG. 1), pad portions (portions for extracting outputs from wiring: not shown), and via portions (wiring from GMR elements) This via portion is not finally exposed (not shown) and wiring (not shown) is formed. Note that an LSI and a wiring layer are built in the substrate 11, and those using the substrate on which the LSI is built are a digital output magnetic sensor, and only the wiring layer is built. The one using the substrate is an analog output magnetic sensor.

  Here, the X-axis GMR element includes a first X-axis GMR element 12a, a second X-axis GMR element 12b, a third X-axis GMR element 12c, and a fourth X-axis GMR element 12d. Then, the X-axis of the substrate 11 (in this case, the left end of FIG. 1A is used as the X-axis reference point, the direction from the reference point toward the right side of the drawing is the X-axis positive direction, and the other side is the opposite side. In the vicinity of the right end of the X-axis negative direction (the same applies hereinafter), the Y-axis (in this case, the lower end of FIG. 1A is used as the Y-axis reference point). The direction from the point toward the upper side of the figure is the Y-axis positive direction, and the direction toward the opposite side is the Y-axis negative direction (the same applies below) (hereinafter referred to as the Y-axis center). The first X-axis GMR element 12a is disposed above, and the second X-axis GMR element 12b is disposed below the first X-axis GMR element 12a. In addition, in the vicinity of the left end of the X axis of the substrate 11, a third X axis GMR element 12c is disposed above the Y axis center, and a fourth X axis GMR element 12d is disposed below the third X axis GMR element 12d.

  The Y1-axis GMR element is composed of a first Y1-axis GMR element 12e, a second Y1-axis GMR element 12f, a third Y1-axis GMR element 12g, and a fourth Y1-axis GMR element 12h. A first Y1-axis GMR element 12e is arranged on the left side of the X-axis central part in the vicinity of the upper end of the Y-axis of the substrate 11, and a second Y1-axis GMR element 12f is arranged on the right side thereof. Further, in the vicinity of the lower end portion of the Y axis of the substrate 11, the third Y1 axis GMR element 12g is arranged on the left side of the X axis central part, and the fourth Y1 axis GMR element 12h is arranged on the right side thereof.

  Further, the Y2-axis GMR element includes a first Y2-axis GMR element 12i, a second Y2-axis GMR element 12j, a third Y2-axis GMR element 12k, and a fourth Y2-axis GMR element 12l. Then, in the vicinity of the lower end portion of the Y axis of the substrate 11, the first Y2 axis GMR element 12i is arranged on the left side of the center part of the X axis, and the second Y2 axis GMR element 12j is arranged on the right side thereof. Further, in the vicinity of the upper end portion of the Y axis of the substrate 11, the third Y2 axis GMR element 12k is arranged on the left side of the X axis central part, and the fourth Y2 axis GMR element 121 is arranged on the right side thereof.

  Here, each of the GMR elements 12a to 12d, 12e to 12h, and 12i to 12l is an even number arranged in parallel and adjacent to each other in a strip shape (in this case, for example, four, but any number of even numbers) (Good) GMR bars are provided, these GMR bars are connected in series by a magnet film (bias magnet film), and a magnet film serving as a terminal portion is connected to these end portions. For example, as shown in FIG. 2 (in FIG. 2, only the first X-axis GMR element 12a is shown, but the other GMR elements have the same configuration), four GMR bars 12a-1, 12a-2, 12a-3, 12a-4 are connected in series by magnet films 12a-6, 12a-7, 12a-8, and magnet films 12a-5, 12a-9 serving as terminal portions are connected to these ends. Has been formed. In this case, each GMR bar (12a-1, 12a-2, 12a-3, 12a-4, etc.) of the X-axis GMR elements 12a to 12d is formed on a plane parallel to the surface of the substrate 11, They are arranged so that their longitudinal directions are parallel to the Y axis (perpendicular to the X axis).

  The Y1-axis GMR element and the Y2-axis GMR element are formed on the slopes of a plurality of protrusions (banks) 15 whose cross-sectional shape formed on the substrate 11 is trapezoidal, and the Y1-axis GMR element. The element is formed on the first slope 15 a of the protrusion (bank part) 15, and the Y2-axis GMR element is formed on the second slope 15 b of the protrusion (bank part) 15. The slopes 15a and 15b have the same inclination angle and are formed so as to be θ (30 ° <θ <60 °) with respect to the plane of the substrate. As shown in FIGS. 1B and 3B, each GMR element of the Y1-axis GMR element (for example, 12e-2) and each GMR element of the Y2-axis GMR element (for example, 12k-2) Are arranged so as to be back to back with one protrusion 15. In this case, the GMR bars of the Y1-axis GMR elements 12e to 12h and the GMR bars of the Y2-axis GMR elements 12i to 12l are arranged so that their longitudinal directions are parallel to the X axis (perpendicular to the Y axis). ing.

  Next, the configuration of the GMR bar will be described with reference to FIG. 2, taking the GMR bar 12a-2 of the first X-axis GMR element 12a as an example. Since the other GMR bars 12a-1, 12a-3, and 12a-4 are equal to this, only the GMR bar 12a-2 will be described here. Also, the configurations of the GMR bars of the other X-axis GMR elements 12b, 12c, 12d, Y1-axis GMR elements 12e, 12f, 12g, 12h and Y2-axis GMR elements 12i, 12j, 12k, 12l are the same. The description is omitted.

  Here, the GMR bar 12a-2 of the first X-axis GMR element 12a is as shown in FIG. 2B, which is a schematic sectional view cut along a plane along the line BB ′ in FIG. In addition, a hard ferromagnetic material such as CoCrPt, which is formed of a spin valve film SV arranged so that its longitudinal direction is perpendicular to the X axis (parallel to the Y axis), is formed below both ends. And magnet films (bias magnet film; hard ferromagnetic thin film layer) 12a-6 and 12a-7 made of a material having a high coercive force. As shown in FIG. 2C, the spin valve film SV has a free layer (free layer, free magnetic layer) F sequentially stacked on the substrate 11, and a film thickness of 2.4 nm (24 cm). A conductive spacer layer S made of Cu, a pinned layer (pinned layer, fixed magnetic layer) P, and a capping layer C made of titanium (Ti) or tantalum (Ta) having a thickness of 2.5 nm (25 mm). ing.

  The free layer F is a layer in which the direction of magnetization changes according to the direction of the external magnetic field. The CoZrNb amorphous magnetic layer 12a-21 having a film thickness of 8 nm (80 cm) formed immediately above the substrate 11 and the CoZrNb amorphous magnetic layer. The NiFe magnetic layer 12a-22 having a thickness of 3.3 nm (33Å) formed on the layer 12a-21 and the thickness of about 1 to 3 nm (10 to 30Å) formed on the NiFe magnetic layer 12a-22. It consists of a CoFe layer 12a-23 having a thickness. The CoZrNb amorphous magnetic layer 12a-21 and the NiFe magnetic layer 12a-22 constitute a soft ferromagnetic thin film layer. The CoFe layer 12a-23 is provided to prevent diffusion of Ni in the NiFe layer 12a-22 and Cu12a-24 in the spacer layer S.

  The pinned layer P is composed of a CoFe magnetic layer 12a-25 having a thickness of 2.2 nm (22 Å) and an antiferromagnetic film 12a-26 having a thickness of 24 nm (240 し た) formed from a PtMn alloy containing 45 to 55 mol% of Pt. Are superimposed. The CoFe magnetic layer 12a-25 is back-coupled to the magnetized (magnetized) antiferromagnetic film 12a-26 in an exchange-coupled manner so that the direction of magnetization (magnetization vector) is pinned (fixed) in the positive direction of the X axis. This constitutes a pinned layer.

  Note that the bias magnet films 12a-5, 12a-6, 12a-7, 12a-8, and 12a-9 of the first X-axis GMR element 12a described above maintain the uniaxial anisotropy of the free layer F. A bias magnetic field is applied to the layer F in a direction parallel to the longitudinal direction of each GMR bar (perpendicular to the X axis). The CoFe magnetic layer 12a-25 (the same applies to the other GMR bars 12a-1, 12a-3, 12a-4) is exchange coupled to the magnetized (magnetized) antiferromagnetic film 12a-26. The pinned layer is formed so that the direction of magnetization (magnetization vector) is pinned (fixed) in the positive direction of the X axis (the direction of arrow a1 in FIG. 4A). Similarly, the second X-axis GMR element 22 applies a bias magnetic field in a direction parallel to the longitudinal direction of each GMR bar (a direction perpendicular to the X-axis). The pinned layer is formed so that the direction of magnetization (magnetization vector) is pinned (fixed) in the positive direction of the X axis (the direction of the arrow b1 in FIG. 4A).

  Thereby, in the first X-axis GMR element 12a and the second X-axis GMR element 12b, the magnetic field sensitivity direction is the direction perpendicular to the longitudinal direction of each GMR bar, that is, the X-axis positive direction (FIG. 4 ( When the magnetic field is applied in the direction of arrows a1 and b1 in FIG. 4A, the resistance values of the first X-axis GMR element 12a and the second X-axis GMR element 12b are magnetic fields. When the magnetic field is applied in the direction opposite to the directions of arrows a1 and b1 in FIG. 4A, the resistance values of the first X-axis GMR element 12a and the second X-axis GMR element 12b are It increases in proportion to the magnitude of the magnetic field.

  On the other hand, in the third X-axis GMR element 12c and the fourth X-axis GMR element 12d, the bias magnet film is 180 ° opposite to the first X-axis GMR element 12a and the second X-axis GMR element 12b and parallel to the longitudinal direction of each GMR bar. A bias magnetic field is applied in a different direction (perpendicular to the X axis). The direction of magnetization (magnetization vector) is the negative direction of the X-axis (the directions of arrows c1 and d1 in FIG. 4A), and the magnetization direction of the pinned layer of the first X-axis GMR element 12a and the second X-axis GMR element 12b is 180. A pinned layer is formed so as to be pinned (fixed) in the opposite direction.

  Thereby, the direction of sensitivity of the magnetic field is perpendicular to the longitudinal direction of each GMR bar, that is, in the directions of arrows c1 and d1 in FIG. 4A (of the first X-axis GMR element 12a and the second X-axis GMR element 12b). When the magnetic field is applied in the directions of arrows c1 and d1 in FIG. 4A, the resistance values of the third X-axis GMR element 12c and the fourth X-axis GMR element 12d are magnetic fields. When the magnetic field is applied in the direction opposite to the arrows c1 and d1 in FIG. 4A, the resistance values of the third X-axis GMR element 12c and the fourth X-axis GMR element 12d become the magnetic field. Will increase in proportion to the size of.

  In the first Y1-axis GMR element 12e and the second Y1-axis GMR element 12f, as schematically shown in FIG. 4B, bias magnet films (for example, 12e-6, 12e- shown in FIG. 4B) are used. 7, 12e-8 and 12f-6, 12f-7, 12f-8, etc.) are respectively GMR bars (for example, 12e-2, 12e-3 and 12f-2, 12f-3 shown in FIG. 4B). ) In the direction parallel to the longitudinal direction, that is, on the plane of the first inclined surface (inclination angle θ) 15a of the projection (bank portion) 15, the longitudinal direction is parallel to the X axis (projection (bank portion). ) A bias magnetic field is applied to the traveling direction of 15 ridge lines). The direction of the magnetization (magnetization vector) is pinned in the Y-axis positive direction and the Z-axis negative direction (solid arrow e1 (f1) direction in FIG. 4B) along the first inclined surface 15a of the protrusion (bank portion) 15. A pinned layer is formed so as to be (fixed).

  These GMR bars (12e-2, 12e-3, 12f-2, 12f-3, etc. shown in FIG. 4B) are bias magnet films (12e-6, 12e-- shown in FIG. 4B). 7, 12e-8 and 12f-6, 12f-7, 12f-8, etc.). Thereby, the sensitivity direction of the magnetic field is a direction perpendicular to the longitudinal direction of each GMR bar and is a positive Y-axis direction and a negative Z-axis direction along the first inclined surface 15a of the protrusion (bank) 15 (FIG. 4 ( (b) (solid arrow e1 (f1) direction), and when a magnetic field having a component in the direction of arrow e1 (f1) in FIG. 4A is applied, the first Y1-axis GMR element 12e and the second Y1-axis GMR element The resistance value of 12f decreases in proportion to the magnitude of the magnetic field. When a magnetic field having a component in the direction opposite to the arrow e1 (f1) in FIG. 4A is applied, the first Y1-axis GMR element 12e and the first The resistance value of the 2Y uniaxial GMR element 12f increases in proportion to the magnitude of the magnetic field.

  On the other hand, in the third Y1-axis GMR element 12g and the fourth Y1-axis GMR element 12h, as schematically shown in FIG. 4C, bias magnet films (for example, 12g-6, 12g- shown in FIG. 7, 12g-8 and 12h-6, 12h-7, 12h-8, etc.), each GMR bar (for example, 12g-2, 12g-3 and 12h-2, 12h-3 etc. shown in FIG. 4 (c)) ) In the direction parallel to the longitudinal direction, that is, on the plane of the first inclined surface (inclination angle θ) 15a of the projection (bank portion) 15, the longitudinal direction is parallel to the X axis (projection (bank portion). ) A bias magnetic field is applied to the traveling direction of 15 ridge lines). The direction of magnetization (magnetization vector) is pinned in the Y-axis negative direction and the Z-axis negative direction (solid arrow g1 (h1) direction in FIG. 4 (c)) along the first inclined surface 15a of the protrusion (bank portion) 15. A pinned layer is formed so as to be (fixed).

  Each of these GMR bars (12g-2, 12g-3 and 12h-2, 12h-3, etc. shown in FIG. 4C) is bias magnet films (12g-6, 12g- shown in FIG. 4C). 7, 12g-8 and 12h-6, 12h-7, 12h-8, etc.). Thereby, the sensitivity direction of the magnetic field is a direction perpendicular to the longitudinal direction of each GMR bar, and the Y-axis negative direction and the Z-axis negative direction along the first inclined surface 15a of the protrusion (bank portion) 15 (FIG. 4 ( c) (solid arrow g1 (h1) direction), and when a magnetic field having a component in the direction of arrow g1 (h1) in FIG. 4A is applied, the third Y1-axis GMR element 12g and the fourth Y1-axis GMR element The resistance value of 12h decreases in proportion to the magnitude of the magnetic field, and when a magnetic field having a component in the direction opposite to the arrow g1 (h1) in FIG. 4A is applied, the third Y1-axis GMR element 12g and the first The resistance value of the 4Y uniaxial GMR element 12h increases in proportion to the magnitude of the magnetic field.

  In the first Y2-axis GMR element 12i and the second Y2-axis GMR element 12j, as schematically shown in FIG. 4C, bias magnet films (for example, 12i-6, 12i- shown in FIG. 4C) are used. 7, 12i-8 and 12j-6, 12j-7, 12j-8, etc.) are respectively GMR bars (for example, 12i-2, 12i-3 and 12j-2, 12j-3 shown in FIG. 4C). ) In the direction parallel to the longitudinal direction, that is, on the plane of the second slope (inclination angle θ) 15b of the projecting portion (bank portion) 15, the longitudinal direction is parallel to the X axis (projecting portion (bank portion). ) A bias magnetic field is applied to the traveling direction of 15 ridge lines). The direction of magnetization (magnetization vector) is pinned in the Y-axis negative direction and the Z-axis positive direction (the broken line arrow i1 (j1) direction in FIG. 4C) along the second inclined surface 15b of the protrusion (bank portion) 15. A pinned layer is formed so as to be (fixed).

  These GMR bars (12i-2, 12i-3 and 12j-2, 12j-3, etc. shown in FIG. 4C) are biased magnet films (12i-6, 12i- shown in FIG. 4C). 7, 12i-8 and 12j-6, 12j-7, 12j-8, etc.). Thereby, the sensitivity direction of the magnetic field is a direction perpendicular to the longitudinal direction of each GMR bar, and the Y-axis negative direction and the Z-axis positive direction (FIG. c), and when a magnetic field having a component in the direction of arrow i1 (j1) in FIG. 4A is applied, the first Y2-axis GMR element 12i and the second Y2-axis GMR element The resistance value of 12j decreases in proportion to the magnitude of the magnetic field. When a magnetic field having a component in the direction opposite to the arrow i1 (j1) in FIG. 4A is applied, the first Y2-axis GMR element 12i and the first The resistance value of the 2Y biaxial GMR element 12j increases in proportion to the magnitude of the magnetic field.

  On the other hand, in the third Y2-axis GMR element 12k and the fourth Y2-axis GMR element 12l, as schematically shown in FIG. 4B, a bias magnet film (for example, 12k-6, 12k- shown in FIG. 4B) is used. 7, 12k-8 and 12l-6, 12l-7, 12l-8, etc.), each GMR bar (for example, 12k-2, 12k-3 and 12l-2, 12l-3 etc. shown in FIG. 4 (b)) ) In the direction parallel to the longitudinal direction, that is, on the plane of the second slope (inclination angle θ) 15b of the projecting portion (bank portion) 15, the longitudinal direction is parallel to the X axis (projecting portion (bank portion). ) A bias magnetic field is applied to the traveling direction of 15 ridge lines). And the direction of magnetization (magnetization vector) is pinned in the Y-axis positive direction and the Z-axis positive direction (the direction of the broken line arrow k1 (l1) in FIG. 4B) along the second inclined surface 15b of the protrusion (bank portion) 15. A pinned layer is formed so as to be (fixed).

  Each of these GMR bars (12k-2, 12k-3 and 12l-2, 12l-3, etc. shown in FIG. 4B) is bias magnet film (12k-6, 12k-- shown in FIG. 4B). 7, 12k-8 and 12l-6, 12l-7, 12l-8, etc.). Thereby, the sensitivity direction of the magnetic field is a direction perpendicular to the longitudinal direction of each GMR bar, and the Y-axis positive direction and the Z-axis positive direction along the second inclined surface 15b of the protrusion (bank portion) 15 (FIG. 4 ( b), the third Y2-axis GMR element 12k and the fourth Y2-axis GMR element when a magnetic field having a component in the arrow k1 (l1) direction in FIG. 4A is applied. The resistance value of 12l decreases in proportion to the magnitude of the magnetic field, and when a magnetic field having a component in the direction opposite to the arrow k1 (l1) in FIG. 4A is applied, the third Y2-axis GMR element 12k and the first The resistance value of the 4Y biaxial GMR element 12l increases in proportion to the magnitude of the magnetic field.

  The X-axis magnetic sensor is shown in FIG. 5A (in FIGS. 5A to 5C, each arrow indicates the direction of magnetization when the pinned layer of each GMR element is pinned in the negative y-axis direction. The first to fourth X-axis GMR elements 12a to 12d are configured by full-bridge connection as shown in the equivalent circuit in FIG. In such a configuration, the pad 13a and the pad 13b are connected to the positive electrode and the negative electrode of the constant voltage source 14, and are given a potential Vxin + (3 V in this example) and a potential Vxin- (0 (V) in this example). . Then, the potentials of the pad 13c and the pad 13d are taken out as the potential Vxout + and the potential Vxout-, respectively, and the potential difference (Vxout + -Vxout-) is taken out as the sensor output Vxout.

  The Y1-axis magnetic sensor is configured by full-bridge connection of the first to fourth Y1-axis GMR elements 12e-12h as shown in an equivalent circuit in FIG. The pad 13e and the pad 13f are connected to the positive electrode and the negative electrode of the constant voltage source 14, and the potential Vy1in + (3V in this example) and the potential Vy1in− (0 (V) in this example) are applied. A potential difference of 13h is taken out as sensor output Vy1out.

  The Y2-axis magnetic sensor is configured by full-bridge connection of the first to fourth Y2-axis GMR elements 12i to 12l as shown in an equivalent circuit in FIG. The pad 13i and the pad 13j are connected to the positive electrode and the negative electrode of the constant voltage source 14, and are supplied with the potential Vy2in + (3V in this example) and the potential Vy2in− (0 (V) in this example). A potential difference of 13 l is taken out as sensor output Vy2out.

Based on the obtained outputs Vxout, Vy1out and Vy2out, the magnetic field component Hx in the X-axis direction can be obtained by the following equation (4). Similarly, the magnetic field component Hy in the Y-axis direction can be obtained from the following equation (5), and the magnetic field component Hz in the Z-axis direction can be obtained from the following equation (6). These calculations are performed by an LSI formed in advance on the substrate 11.
Hx = 2kx × Vxout (4)
Hy = ky (Vy1out−Vy2out) / cos θ (5)
Hz = kz (Vy1out + Vy2out) / sinθ (6)
However, (theta) is the inclination-angle of each slope 15a, 15b of the protrusion (bank part) 15, Comprising: (theta) in this case has a relationship of 30 degrees <(theta) <60 degrees. Further, kx, ky, and kz are proportional constants, and if the sensitivity of each sensor is equal, kx = ky = kz.

  Next, a method for manufacturing the three-axis magnetic sensor having the above-described configuration will be described below based on the schematic cross-sectional views of FIGS. 6 to 15, (a) shows a via portion, (b) shows a pad portion, and (c) shows a Y1-axis GMR portion and a Y2-axis GMR portion. In this case, as described above, as the substrate 11, it is desirable to use a substrate in which an LSI has been fabricated in advance by a CMOS process or a substrate in which only a wiring layer has been fabricated in advance.

In this method of manufacturing a triaxial magnetic sensor, as shown in FIG. 6, first, an interlayer insulating film (SOG: Spin On Glass) 11b is formed on a substrate (quartz substrate or silicon substrate) 11 on which a wiring layer 11a is formed. It flattened by applying. After that, as shown in FIG. 7, the interlayer insulating film 11b on the via part and the pad part was removed by etching, and openings 11c and 11d were produced. Next, as shown in FIG. 8, an oxide film (thickness: 1500 mm) 11e made of, for example, a SiO ₂ film and a nitride film (thickness: 5000 mm) 11f made of, for example, a Si ₃ N ₄ film are formed on these surfaces by plasma CVD. Was formed. Subsequently, after applying a resist on these, it cut into the pattern which forms an opening in a via part and a pad part.

  Next, after removing the nitride film 11f on the via part and the pad part by etching, the resist was removed. Thereby, as shown in FIG. 9, openings 11g and 11h are formed in the nitride film 11f on the via part and the pad part, but the oxide film 11e is left without being etched. In this case, the opening width (diameter) of the openings 11g and 11h is made smaller than the opening width (diameter) of the openings 11c and 11d. This is to prevent the interlayer insulating film 11b from being exposed in the openings 11c and 11d and preventing moisture from entering the wiring layer and the LSI.

Thereafter, as shown in FIG. 10, an upper oxide film (thickness: 5 μm) 11i made of, for example, a SiO ₂ film was formed thereon by plasma CVD. Next, a resist was applied on these to form a resist film (thickness: 5 μm) 11j. Then, a pattern for forming an opening in the via portion and the pad portion is cut in the formed resist film (thickness: 5 μm) 11j, and protrusions (bank portion) for arranging the Y1-axis GMR element and the Y2-axis GMR element ) The pattern for forming 15 was cut. After the cutting, heat treatment was performed at a temperature of 150 ° C. for 10 minutes to form the tapered portion of the resist 11j in a tapered shape (tapered) as shown in FIG.

  Thereafter, the upper oxide film (thickness: 5 μm) 11i and the resist film (thickness: 5 μm) 11j are etched at substantially the same ratio, and a thickness of about 5000 mm remains at the maximum thickness portion of the upper oxide film 11i after etching. Dry etching was performed under various conditions. At this time, the opening width (diameter) at the via portion and the pad portion of the upper oxide film 11i was not made larger than the opening width (diameter) at the via portion and the pad portion of the nitride film 11f. After dry etching, the remaining resist was removed. As a result, as shown in FIG. 12, a protrusion (bank portion) 15 made of the upper oxide film 11i is formed in the GMR portion.

  Next, a resist was applied on these, and the resist was cut into a pattern for forming an opening in the via portion, and then etched. Thereafter, by removing the remaining resist, as shown in FIG. 13, an opening 11k was formed in the via portion, and the uppermost wiring layer 11a of the substrate 11 was exposed. Next, a base film made of Ti or Cr (film thickness: 300 μm) was formed by sputtering.

  Next, a bias magnet film 11m having a high coercive force made of a hard ferromagnetic material such as CoCrPt (later, for example, 12a-5, 12a-6, 12a-7, 12a-8, 12a shown in FIG. 2A). −9 etc.) was formed on the surface of the base film by sputtering, vacuum deposition, ion plating, or the like. A resist was applied on the base film and the bias magnet film 11m, the resist was cut into a pattern of the bias magnet film 11m, and then the bias magnet film 11m and the base film were etched. In this case, the resist may be tapered by appropriately performing etching at the slopes 15a and 15b of the protrusion (bank part) 15 and performing a heat treatment to adjust the cross-sectional shape of the protrusion (bank part) 15. Thereafter, the remaining resist was removed. Next, a GMR multilayer film 11n (later 12a to 12d, 12e to 12h, 12i to 12l, etc.) forming a GMR element was formed on the surface of the base film and the bias magnet film 11m by sputtering.

  As shown in FIG. 2C, the GMR multilayer film 11n has a free layer (free layer, free magnetic layer) F sequentially stacked on the substrate 11, and a film thickness of 2.4 nm (24 cm). A conductive spacer layer S made of Cu, a pinned layer (fixed layer, fixed magnetic layer) P, and a capping layer C made of titanium (Ti) or tantalum (Ta) having a film thickness of 2.5 nm (25 mm). Yes. The free layer F includes a CoZrNb amorphous magnetic layer 12a-21 having a film thickness of 8 nm (80 mm) formed immediately above the substrate 11, a NiFe magnetic layer 12a-22 having a film thickness of 3.3 nm (33 mm), The CoFe layer 12a-23 has a thickness of about 1 to 3 nm (10 to 30 mm). The CoZrNb amorphous magnetic layer 12a-21 and the NiFe magnetic layer 12a-22 constitute a soft ferromagnetic thin film layer. On the other hand, the pinned layer P is formed by superposing a CoFe magnetic layer 12a-25 having a thickness of 2.2 nm (22 Å) and an antiferromagnetic film 12a-26 having a thickness of 24 nm (240 Å).

  Next, the permanent magnet array 16 was brought close to the obtained laminated body, and regularized heat treatment (pinning treatment) was performed as described later to fix the magnetization direction of the pinned layer P. Thereafter, a resist is applied on the surface of the GMR multilayer film 11n so as to have an arbitrary thickness, for example, 2 μm in a flat portion, a mask is disposed on the resist surface, and baking and development are performed. Unnecessary resist is removed, and a resist film having the same pattern as the GMR multilayer film 11n obtained later is formed. At that time, the resist is tapered in order to appropriately perform etching at the projecting portion (bank portion) 15 and to adjust the cross-sectional shape of the projecting portion (bank portion) 15. Thereafter, the portion of the GMR multilayer film 11n not protected by the resist film was removed by ion milling to form the GMR multilayer film 11n in a predetermined shape (for example, a plurality of narrow strips). At that time, both the GMR multilayer film 11n and the bias magnet film 11m remain in the via portion. This is to prevent disconnection at the edge of the via portion.

Next, the resist film is removed, and a nitride film 11o made of, for example, a Si ₃ N ₄ film having a thickness of 10,000 mm is formed thereon by plasma CVD, and then a polyimide film 11p is formed thereon. A protective film was formed. Next, using the polyimide film 11p on the pad portion as a mask, the nitride film 11o on the pad portion is removed by etching to open the pad portion, and each pad is formed, and a wiring for connecting these is formed. The substrate 11 was cut. As described above, the triaxial magnetic sensor 10 of the first embodiment shown in FIG. 1 is manufactured.

  Here, the regularized heat treatment (pinning treatment) is performed as shown in FIG. 16 (note that only five permanent bar magnet pieces are shown in FIG. 16), and a permanent bar magnet array (magnet array). 16 were placed on the substrate 11, and these were heated in a vacuum at 260 ° C. to 290 ° C. and left in that state for about 4 hours. That is, first, a permanent bar magnet array (magnet array) 16 is prepared which is arranged in a lattice so that the polarities of the upper ends (lower ends) of adjacent permanent bar magnet pieces are different from each other. Thereafter, the permanent bar magnet pieces 16a (the lower end becomes N pole) are arranged on the center portion of the substrate 11, and the permanent bar magnet pieces 16b are arranged on the upper, lower, left and right regions of the permanent bar magnet piece 16a outside the substrate 11. 16c, 16e (permanent bar magnet array 16 is arranged so that the lower end is the S pole).

  As a result, the directions differ by 90 ° from the N pole of the permanent bar magnet piece 16a disposed on the center of the substrate 11 toward the S pole of the permanent bar magnet pieces 16b, 16c, and 16e adjacent to the N pole. A magnetic field (dotted arrow in FIG. 16) is formed. Using such a magnetic field, the magnetization direction of the pinned layer P (the pinned layer of the pinned layer P) is fixed by heating to 260 ° C. to 290 ° C. in a vacuum and leaving it in that state for about 4 hours. It becomes. As a result, as shown in FIG. 4, in the first X-axis GMR element 12a and the second X-axis GMR element 12b, the magnetization direction of the pinned layer is fixed in the directions a1 and b1 in FIG. In the axial GMR element 12c and the fourth X-axis GMR element 12d, the magnetization direction of the pinned layer is fixed in the c1 and d1 directions in FIG.

  On the other hand, in the first Y1-axis GMR element 12e and the second Y1-axis GMR element 12f, the Y-axis positive direction along the first inclined surface 15a of the protrusion (bank portion) 15, that is, the arrow e1 (f1) in FIG. The magnetization direction of the pinned layer is fixed in the direction. Further, in the third Y1-axis GMR element 12g and the fourth Y1-axis GMR element 12h, the negative Y-axis direction along the first inclined surface 15a of the projecting portion (bank portion) 15, that is, the arrow g1 (h1) in FIG. The magnetization direction of the pinned layer is fixed in the direction. Further, in the first Y2-axis GMR element 12i and the second Y2-axis GMR element 12j, the negative Y-axis direction along the second inclined surface 15b of the protrusion (bank portion) 15, that is, the arrow i1 (j1) in FIG. The magnetization direction of the pinned layer is fixed in the direction. Further, in the third Y2-axis GMR element 12k and the fourth Y2-axis GMR element 12l, the Y-axis positive direction along the second inclined surface 15b of the protrusion (bank portion) 15, that is, the arrow k1 (l1) in FIG. The magnetization direction of the pinned layer is fixed in the direction.

  In such an ordered heat treatment (pinning process), it is desirable to apply a strong magnetic field in the horizontal direction to the inclined surfaces 15 a and 15 b of the protrusion (bank portion) 15. Therefore, as shown in FIG. 17A, an iron yoke 17 having a window 17a formed at a position corresponding to each permanent bar magnet piece 16a, 16b, 16c, 16e of a permanent bar magnet array (magnet array) 16 is provided. It is desirable to use a regularized heat treatment. In this case, as shown in FIG. 17B, a permanent bar magnet array (magnet array) 16 is disposed on the substrate 11 on which each element is formed as described above, and a yoke 17 is disposed below the substrate 11. They were placed and heated in a vacuum at 260 ° C. to 290 ° C. and left in that state for about 4 hours. In this case, when the yoke 17 is arranged under the substrate 11, the window 17a is positioned at a position corresponding to each permanent bar magnet piece 16a, 16b, 16c, 16e of the permanent bar magnet array (magnet array) 16. Arranged and went. Thereby, it becomes possible to apply a strong magnetic field in the horizontal direction to the slopes 15 a and 15 b of the protrusion (bank portion) 15.

<Modification>
The three-axis magnetic sensor of the first embodiment described above can be modified by adding various modifications to the arrangement relationship of the GMR elements. Below, the typical modification of the triaxial magnetic sensor of Example 1 shall be demonstrated easily based on FIGS. In this case, in FIGS. 18 to 20, as in FIG. 1A, the permanent bar magnet array (magnet array) similar to that of the first embodiment in the regularization heat treatment is shown together with the arrangement state of each GMR element on each substrate. ) Is also shown.

<First Modification>
As shown in FIG. 18, the three-axis magnetic sensor 20 of the first modification includes an X-axis GMR element formed on the plane of the substrate 21 and a protrusion formed on the substrate, as in the first embodiment. A Y1-axis GMR element formed on a first slope of a portion (not shown) and a Y2-axis GMR element formed on a second slope. Here, the X-axis GMR element includes a first X-axis GMR element 22a, a second X-axis GMR element 22b, a third X-axis GMR element 22c, and a fourth X-axis GMR element 22d. In this case, the GMR bars constituting the respective elements are arranged so that the longitudinal direction thereof is at an angle of 45 ° with respect to the X axis (Y axis).

  The tops (or valleys) of the protrusions are formed at an angle of 45 ° with respect to the X axis (Y axis), and the first Y1-axis GMR element 22e is formed on the first inclined surface of these protrusions. A second Y1-axis GMR element 22f, a third Y1-axis GMR element 22g, and a fourth Y1-axis GMR element 22h are formed to form a Y1-axis GMR element. In this case, since the top (or valley) of the protrusion is formed at an angle of 45 ° with respect to the X axis (Y axis), the longitudinal direction of the GMR bar constituting each element is also the X axis. They are arranged so as to be at an angle of 45 ° with respect to the (Y axis).

  Further, a first Y2-axis GMR element 22i, a second Y2-axis GMR element 22j, a third Y2-axis GMR element 22k, and a fourth Y2-axis GMR element 22l are formed on the second inclined surface of the protrusion to constitute the Y2-axis GMR element. Has been. Also in this case, since the top (or valley) of the protrusion is formed at an angle of 45 ° with respect to the X axis (Y axis), the longitudinal direction of the GMR bar constituting each element is X They are arranged so as to be at an angle of 45 ° with respect to the axis (Y axis).

  Then, a permanent bar magnet array (magnet array) 16 similar to that in Example 1 was placed on the substrate 21 as shown in FIG. 18, and then heated to 260 ° C. to 290 ° C. in a vacuum, and kept in that state for 4 hours. The regularized heat treatment was performed by leaving it to stand. As a result, the direction differs by 90 ° from the N pole of the permanent bar magnet piece 16a disposed on the center of the substrate 21 toward the S pole of the permanent bar magnet pieces 16b, 16c, and 16e adjacent to the N pole. A magnetic field is formed, and the magnetization direction of the pinned layer P (the pinned layer of the pinned layer P) is fixed. As a result, in the first X-axis GMR element 22a and the second X-axis GMR element 22b, the magnetization direction of the pinned layer is fixed in the directions of arrows a1 and b1 in FIG. 18, and the third X-axis GMR element 22c and the fourth X-axis GMR element In 22d, the magnetization direction of the pinned layer is fixed in the directions of arrows c1 and d1 in FIG.

  Further, in the first Y1-axis GMR element 22e and the second Y1-axis GMR element 22f, the Y-axis positive direction along the first slope of the protrusion (bank) inclined 45 ° with respect to the X-axis (Y-axis) and Z The direction of magnetization of the pinned layer is fixed in the negative axis direction, that is, in the directions of arrows e1 and f1 in FIG. Further, in the third Y1-axis GMR element 22g and the fourth Y1-axis GMR element 22h, the Y-axis negative direction and the Z-axis along the first slope of the protrusion (bank portion) inclined by 45 ° with respect to the X-axis (Y-axis), respectively. The direction of magnetization of the pinned layer is fixed in the negative axis direction, that is, in the directions of arrows g1 and h1 in FIG.

Further, in the first Y2-axis GMR element 22i and the second Y2-axis GMR element 22j, the Y-axis negative direction and the Z-axis along the second inclined surface of the protrusion (bank portion) inclined by 45 ° with respect to the X-axis (Y-axis) respectively. The direction of magnetization of the pinned layer is fixed in the positive axial direction, that is, in the directions of arrows i1 and j1 in FIG. In the third Y2-axis GMR element 22k and the fourth Y2-axis GMR element 22l, the Y-axis positive direction along the second inclined surface of the protrusion (bank) inclined 45 ° with respect to the X-axis (Y-axis) and Z The direction of magnetization of the pinned layer is fixed in the positive axial direction, that is, in the directions of arrows k1 and l1 in FIG.
If the longitudinal direction of each GMR bar is arranged at an angle of 45 ° with respect to the X axis (Y axis) in this way, the reason is unknown, but the stability against strong magnetic fields is improved. It turns out that it improves.

<Second modification>
As shown in FIG. 19, the triaxial magnetic sensor 30 of the second modification is formed at an X axis GMR element disposed at a pair of corners of a square substrate 31 in plan view and at another pair of corners. A Y1-axis GMR element formed on the first slope of the protruding portion (not shown) and a Y2-axis GMR element formed on the second slope. Here, the X-axis GMR element includes a first X-axis GMR element 32a, a second X-axis GMR element 32b, a third X-axis GMR element 32c, and a fourth X-axis GMR element 32d. In this case, the GMR bars constituting the respective elements are arranged such that the longitudinal direction thereof is at an angle of 45 ° with respect to each side (X axis or Y axis) of the substrate 31.

  The tops (or valleys) of the protrusions are formed at an angle of 45 ° with respect to each side (X axis or Y axis) of the substrate 31, and the first inclined surfaces of these protrusions A first Y1-axis GMR element 32e, a second Y1-axis GMR element 32f, a third Y1-axis GMR element 32g, and a fourth Y1-axis GMR element 32h are formed to constitute a Y1-axis GMR element. In this case, since the top (or valley) of the protrusion is formed at an angle of 45 ° with respect to each side (X axis or Y axis) of the substrate 31, the GMR bar constituting each element is formed. Are arranged so as to have an angle of 45 ° with respect to each side (X axis or Y axis) of the substrate 31.

  Further, a first Y2 axis GMR element 32i, a second Y2 axis GMR element 32j, a third Y2 axis GMR element 32k, and a fourth Y2 axis GMR element 32l are formed on the second inclined surface of the protrusion to constitute the Y2 axis GMR element. Has been. Also in this case, the top (or valley) of the protrusion is formed at an angle of 45 ° with respect to each side (X-axis or Y-axis) of the substrate 31, so that the GMR constituting each element is formed. The bars are arranged so that the longitudinal direction of the bar is at an angle of 45 ° with respect to each side (X axis or Y axis) of the substrate 31.

  Then, a permanent bar magnet array (magnet array) 16 similar to that in Example 1 was placed on the substrate 31 as shown in FIG. 19, and then heated to 260 ° C. to 290 ° C. in a vacuum, and kept in that state for 4 hours. The regularized heat treatment was performed by leaving it to stand. As a result, the directions differ by 90 ° from the north pole of the permanent bar magnet piece 16a disposed on the center of the substrate 31 toward the south pole of the permanent bar magnet pieces 16b, 16c, 16e adjacent to the north pole. A magnetic field is formed, and the magnetization direction of the pinned layer P (the pinned layer of the pinned layer P) is fixed. As a result, in the first X-axis GMR element 32a and the second X-axis GMR element 32b, the magnetization direction of the pinned layer is 45 ° positive with respect to the X axis of the substrate 31, that is, in the directions of arrows a1 and b1 in FIG. Will be fixed. In the third X-axis GMR element 32c and the fourth X-axis GMR element 32d, the magnetization direction of the pinned layer is 135 ° negative with respect to the X axis of the substrate 31, that is, in the directions of arrows c1 and d1 in FIG. It will be fixed.

  Further, in the first Y1-axis GMR element 32e and the second Y1-axis GMR element 32f, protrusions (bank portions) formed at angles of 45 ° with respect to each side (X-axis or Y-axis) of the substrate 31. ) Along the inclination direction of the first inclined surface, in the direction from the center of the substrate toward the corner of the 45 ° negative direction with respect to the X axis of the substrate 31 and in the negative direction of the Z axis, that is, in the directions of arrows e1 and f1 in FIG. Therefore, the magnetization direction of the pinned layer is fixed. Further, in the third Y1-axis GMR element 32g and the fourth Y1-axis GMR element 32h, protrusions (bank portions) formed so as to have an angle of 45 ° with respect to each side (X-axis or Y-axis) of the substrate 31. ) Along the inclination direction of the first slope (Z-axis negative direction), from the center of the substrate toward the 135 ° positive corner with respect to the X-axis of the substrate 31 and in the Z-axis negative direction, that is, FIG. The magnetization direction of the pinned layer is fixed in the directions of arrows g1 and h1.

  Further, in the first Y2-axis GMR element 32i and the second Y2-axis GMR element 32j, protrusions (bank portions) formed so as to have an angle of 45 ° with respect to each side (X axis or Y axis) of the substrate 31. ) Along the inclination direction of the second slope (the direction opposite to the inclination direction of the first slope), the direction from the center of the substrate toward the corner of the 135 ° positive direction with respect to the X axis of the substrate 31, and the Z axis positive The direction of magnetization of the pinned layer is fixed in the direction, that is, in the directions of arrows i1 and j1 in FIG. Further, in the third Y2-axis GMR element 32k and the fourth Y2-axis GMR element 32l, protrusions (bank portions) formed so as to have an angle of 45 ° with respect to each side (X-axis or Y-axis) of the substrate 31. ) Along the inclination direction of the second inclined surface (the direction opposite to the inclination direction of the first inclined surface), from the center of the substrate toward the corner of 45 ° negative direction with respect to the X axis of the substrate 31, and positive in the Z axis. The direction of magnetization of the pinned layer is fixed in the direction, that is, in the directions of arrows k1 and l1 in FIG.

<Third Modification>
As shown in FIG. 20, the three-axis magnetic sensor 40 of the third modification is formed on the X-axis GMR element disposed at a pair of corners of a square substrate 41 in plan view and at another pair of corners. A Y1-axis GMR element formed on the first slope of the protruding portion (not shown) and a Y2-axis GMR element formed on the second slope. Here, the X-axis GMR element includes a first X-axis GMR element 42a, a second X-axis GMR element 42b, a third X-axis GMR element 42c, and a fourth X-axis GMR element 42d. In this case, the GMR bars constituting the respective elements are arranged so that the longitudinal direction thereof is perpendicular to the X axis of the substrate 41 (parallel to the Y axis).

  The top (or trough) of the protrusions is formed to be parallel to the X axis of the substrate 41 (perpendicular to the Y axis), and the first Y1-axis GMR element 42e and the first slope of these protrusions The second Y1-axis GMR element 42f, the third Y1-axis GMR element 42g, and the fourth Y1-axis GMR element 42h are formed, and the Y1-axis GMR element is configured. In this case, since the top (or valley) of the protrusion is formed so as to be parallel to the X axis of the substrate 41 (perpendicular to the Y axis), the longitudinal direction of the GMR bar constituting each element is also the same as that of the substrate 41. It is arranged so as to be parallel to the X axis (perpendicular to the Y axis).

  Further, a first Y2 axis GMR element 42i, a second Y2 axis GMR element 42j, a third Y2 axis GMR element 42k, and a fourth Y2 axis GMR element 42l are formed on the second inclined surface of the protrusion to constitute the Y2 axis GMR element. Has been. Also in this case, since the top (or valley) of the protrusion is formed so as to be parallel to the X axis of the substrate 41 (perpendicular to the Y axis), the longitudinal direction of the GMR bar constituting each element is the substrate 41. Are arranged parallel to the X axis (perpendicular to the Y axis).

  Then, a permanent bar magnet array (magnet array) 16 similar to that in Example 1 was placed on the substrate 41 as shown in FIG. 20, and then heated to 260 ° C. to 290 ° C. in a vacuum, and kept in that state for 4 hours. The regularized heat treatment was performed by leaving it to stand. As a result, the directions differ by 90 ° from the N pole of the permanent bar magnet piece 16a disposed on the center of the substrate 41 toward the S pole of the permanent bar magnet pieces 16b, 16c, and 16e adjacent to the N pole. A magnetic field is formed, and the magnetization direction of the pinned layer P (the pinned layer of the pinned layer P) is fixed. As a result, in the first X-axis GMR element 42a and the second X-axis GMR element 42b, the direction of magnetization of the pinned layer in the 45 ° positive direction with respect to the X axis of the substrate 41, that is, in the directions of arrows a1 and b1 in FIG. Will be fixed. Further, in the third X-axis GMR element 42c and the fourth X-axis GMR element 42d, the magnetization direction of the pinned layer is 135 ° negative with respect to the X axis of the substrate 41, that is, in the directions of arrows c1 and d1 in FIG. It will be fixed.

  Further, in the first Y1-axis GMR element 42e and the second Y1-axis GMR element 42f, along the first slope of the projection (bank) formed so as to be parallel to the X axis of the substrate 31 (perpendicular to the Y axis). The direction of magnetization of the pinned layer is fixed in the direction from the center of the substrate toward the 45 ° negative corner with respect to the X axis of the substrate 31 and in the Z axis negative direction, that is, in the directions of arrows e1 and f1 in FIG. The Rukoto. Further, in the third Y1-axis GMR element 42g and the fourth Y1-axis GMR element 42h, along the first slope of the protrusion (bank) formed so as to be parallel to the X axis of the substrate 41 (perpendicular to the Y axis). The magnetization direction of the pinned layer is fixed in the direction from the center of the substrate toward the corner of the positive direction of 135 ° with respect to the X axis of the substrate 31 and in the negative direction of the Z axis, that is, in the directions of arrows g1 and h1 in FIG. The Rukoto.

  Further, in the first Y2-axis GMR element 42i and the second Y2-axis GMR element 42j, along the second slope of the protrusion (bank) formed so as to be parallel to the X axis of the substrate 41 (perpendicular to the Y axis). The direction of magnetization of the pinned layer is fixed in the direction from the center of the substrate toward the 45 ° negative corner with respect to the X axis of the substrate 31 and in the positive direction of the Z axis, that is, in the directions of arrows i1 and j1 in FIG. The Rukoto. Further, in the third Y2-axis GMR element 42k and the fourth Y2-axis GMR element 42l, along the second slope of the protrusion (bank) formed so as to be parallel to the X axis of the substrate 41 (perpendicular to the Y axis). The direction of magnetization of the pinned layer is fixed in the direction from the center of the substrate toward the corner of the positive direction of 135 ° with respect to the X axis of the substrate 31 and in the positive direction of the Z axis, that is, in the directions of arrows k1 and l1 in FIG. The Rukoto.

<Fourth modification>
In the first embodiment described above, each GMR bar forming the Y1-axis GMR element and the Y2-axis GMR element formed on the inclined surface of the protrusion 15 is formed on the bias magnet film (for example, FIGS. 3A and 3B). 12e-5, 12e-6, 12e-7, 12e-8, 12e-9 and 12k-5, 12k-6, 12k-7, 12k-8, 12k-9, etc.) A bias magnet film is also formed at the top of 15.

  Therefore, in the fourth modification, as shown in FIG. 21 (in FIG. 21, the same reference numerals as those in FIG. 3 represent the same names), the bias magnet film is formed on the top of the protrusion 15. Bias magnet film (for example, 12e-5, 12e-6, 12e-7, 12e-8, 12e-9 and 12k-5, 12k-6, 12k-7, 12k-8, 12k-9, etc.) A nonmagnetic film (for example, made of a nonmagnetic material such as polysilicon) is formed on the portion (connecting portion) located at the top of the portion 15. For example, as shown in FIG. 21, a nonmagnetic film 12e-61 (12k-61) is formed on a portion (connection portion) located on the top of the protrusion 15 of the bias magnet film 12e-6 (12k-6), A nonmagnetic film 12e-71 (12k-71) is formed on a portion (connection portion) located at the top of the protrusion 15 of the bias magnet film 12e-7 (12k-7), and the bias magnet film 12e-8 (12k-) is formed. A nonmagnetic film 12e-81 (12k-81) was formed on the portion (connecting portion) located on the top of the protrusion 15 in 8).

  In this case, a nonmagnetic film (for example, 12e-61 (12k-61), 12e-71 (12k-71), 12e-81 (12k-81) shown in FIG. 21) is formed on the top of the protrusion 15. In this case, a step of forming a nonmagnetic film (for example, 12e-61 (12k-61), 12e-71 (12k-71), 12e-81 (12k-81), etc.) is provided after the step of FIG. There is a need. Then, after forming the nonmagnetic film, a bias magnet film may be formed as shown in FIG.

2. Example 2
Next, the triaxial magnetic sensor of Example 2 will be described below with reference to FIGS. FIG. 22 is a plan view showing a schematic configuration of the triaxial magnetic sensor of the second embodiment. 23 is an enlarged view of the F and G parts in FIG. 22, and FIG. 23 (a) is an enlarged cross-sectional view of the F-H 'section of the F part, and FIG. 23 (b). FIG. 23C is an enlarged plan view of the G portion, FIG. 23C is a sectional view showing the HH ′ section of the G portion in an enlarged manner, and FIG. 23D is a plan view in which the G portion is enlarged. .

In the first embodiment described above and its modification, the Y1-axis GMR element is disposed on the first slope of the protrusion 15 and the Y2-axis GMR element is disposed on the second slope of the protrusion 15. In Example 2, the Y1-axis GMR element is disposed only on the first slope of the protrusion 55, and is another protrusion different from the protrusion 55, and the protrusion 56 has the same shape as the protrusion 55. Y2-axis GMR elements are arranged only on two slopes.
Here, as shown in FIG. 22, the triaxial magnetic sensor 50 according to the second embodiment includes X-axis GMR elements 52a to 52d, Y1-axis GMR elements 52e to 52h, and Y2-axis GMR elements 52i to 52l. A peripheral portion of the substrate 51 is formed at the center of each side. In this case, since the X-axis GMR elements 52a to 52d are the same as the X-axis GMR elements 12a to 12d of the first embodiment described above, description thereof is omitted.

  As shown in FIG. 23A, the Y1-axis GMR elements 52e to 52h have GMR bars 52e-1, 52e-2, 52e-3, 52e- only on the first inclined surface of the protrusion 55 formed on the substrate 51. 4 (the same applies to 52f, 52g, and 52h). These GMR bars are the same for the bias magnet films 52e-5, 52e-6, 52e-7, 52e-8, 52e-9 (52f, 52g, 52h) as shown in FIG. Are connected in series. On the other hand, as shown in FIG. 23C, the Y2-axis GMR elements 52i to 52l are provided only on the second slope of the projection 56 different from the projection 55 formed on the substrate 51. 1, 52k-2, 52k-3, 52k-4 (the same applies to 52i, 52j, 52l). As shown in FIG. 23D, these GMR bars are the same for the bias magnet films 52k-5, 52k-6, 52k-7, 52k-8, 52k-9 (52i, 52j, 52l). ) Are connected in series.

  Then, regularized heat treatment is performed using the same permanent bar magnet array 16 as in the first embodiment. Thus, in the first X-axis GMR element 52a and the second X-axis GMR element 52b, the magnetization direction of the pinned layer is fixed in the directions of arrows a1 and b1 in FIG. 22, and the third X-axis GMR element 52c and the fourth X-axis GMR element In 52d, the magnetization direction of the pinned layer is fixed in the directions of arrows c1 and d1 in FIG.

  Further, in the first Y1-axis GMR element 52e and the second Y1-axis GMR element 52f, the Y-axis positive direction along the first slope of the protrusion (bank portion) 55 is the Z-axis negative direction, that is, the arrows e1, FIG. The direction of magnetization of the pinned layer is fixed in the f1 direction. Further, in the third Y1-axis GMR element 52g and the fourth Y1-axis GMR element 52h, the Y-axis negative direction along the first slope of the protrusion (bank portion) 55 is the Z-axis negative direction, that is, the arrows g1, FIG. The direction of magnetization of the pinned layer is fixed in the h1 direction.

Furthermore, in the first Y2-axis GMR element 52i and the second Y2-axis GMR element 52j, the Y-axis negative direction along the second inclined surface of the protrusion (bank) 56 is the Z-axis positive direction, that is, the arrows i1, FIG. The magnetization direction of the pinned layer is fixed in the j1 direction. Further, in the third Y2-axis GMR element 52k and the fourth Y2-axis GMR element 52l, the Y-axis positive direction along the slope of the protrusion (bank) 56 is the Z-axis positive direction, that is, the directions of the arrows k1, 11 in FIG. Therefore, the magnetization direction of the pinned layer is fixed.
In the second embodiment, the magnetic field may be optimized only on the slope side where the element is formed.

It is a schematic block diagram which shows typically the triaxial magnetic sensor of Example 1, Fig.1 (a) is a top view, FIG.1 (b) is sectional drawing which shows the AA 'cross section of Fig.1 (a). is there. FIG. 2 is a diagram schematically showing a schematic configuration of a giant magnetoresistive effect element used in the three-axis magnetic sensor of the present invention. FIG. 2A is a diagram in which a plurality of giant magnetoresistive effect element (GMR) bars are connected to each other. FIG. 2B is a plan view showing a state in which a giant magnetoresistive effect element for an X-axis sensor is configured, and FIG. 2B is a cross-sectional view schematically showing a BB ′ cross section of FIG. FIG.2 (c) is a figure which shows typically the lamination | stacking state inside FIG.2 (b). A plan view showing a state in which a plurality of giant magnetoresistive effect elements (GMR) bars are connected to form one giant magnetoresistive effect element for Y1-axis sensor and one giant magnetoresistive effect element for Y2-axis sensor. FIG. 3A is a plan view thereof, and FIG. 3B is a perspective view schematically showing a state where the portion C of FIG. 3A is viewed obliquely from above. FIG. 4 is a diagram schematically illustrating a pinning direction and a sensitivity direction of the triaxial magnetic sensor in FIG. 1, FIG. 4A is a plan view schematically illustrating the entire plane, and FIG. FIG. 4C is a perspective view schematically showing an enlarged D part of FIG. 4A, and FIG. 4C is a perspective view schematically showing an enlarged E part of FIG. FIG. 5A is a block diagram showing the bridge connection of the X-axis sensor, FIG. 5B is a block diagram showing the bridge connection of the Y1-axis sensor, and FIG. c) is a block diagram showing the bridge connection of the Y2-axis sensor. It is sectional drawing which shows typically the triaxial magnetic sensor of Example 1 in the middle of manufacture. It is sectional drawing which shows typically the triaxial magnetic sensor of Example 1 in the middle of manufacture. It is sectional drawing which shows typically the triaxial magnetic sensor of Example 1 in the middle of manufacture. It is sectional drawing which shows typically the triaxial magnetic sensor of Example 1 in the middle of manufacture. It is sectional drawing which shows typically the triaxial magnetic sensor of Example 1 in the middle of manufacture. It is sectional drawing which shows typically the triaxial magnetic sensor of Example 1 in the middle of manufacture. It is sectional drawing which shows typically the triaxial magnetic sensor of Example 1 in the middle of manufacture. It is sectional drawing which shows typically the triaxial magnetic sensor of Example 1 in the middle of manufacture. It is sectional drawing which shows typically the triaxial magnetic sensor of Example 1 in the middle of manufacture. It is sectional drawing which shows typically the triaxial magnetic sensor of Example 1 in the middle of manufacture. It is a top view which shows typically the state of ordered heat processing (pinning process). FIG. 17A is a diagram showing a yoke used in ordering heat treatment (pinning treatment), FIG. 17A is a plan view schematically showing a part of the plane of the yoke, and FIG. It is sectional drawing which shows typically the state which performs crystallization heat processing (pinning process). 10 is a plan view showing a schematic configuration of a three-axis magnetic sensor of Modification 1. FIG. 10 is a plan view showing a schematic configuration of a three-axis magnetic sensor of Modification 2. FIG. 10 is a plan view showing a schematic configuration of a three-axis magnetic sensor of Modification 3. FIG. FIG. 10 is a plan view showing a main part of a three-axis magnetic sensor of Modification 4; 6 is a plan view showing a schematic configuration of a triaxial magnetic sensor of Example 2. FIG. It is a figure which expands and shows the A section of FIG. 22, B part, FIG.23 (a) is sectional drawing which expands the HH 'cross section of F part, FIG.23 (b) shows F part. FIG. 23C is an enlarged plan view, FIG. 23C is a cross-sectional view showing an HH ′ cross section of the G portion in an enlarged manner, and FIG. 23D is an enlarged plan view of the G portion. It is a schematic block diagram which shows typically the magnetic sensor of a prior art example, Fig.24 (a) is a top view, FIG.24 (b) is the side view. It is a figure which shows the bridge connection of the magnetic sensor of a prior art example.

Explanation of symbols

10 ... three-axis magnetic sensor of Example 1, 11 ... substrate, 11a ... wiring layer, 11b ... interlayer insulation film, 11c, 11d ... opening, 11e ... oxide film (SiO ₂ film), 11f ... nitride film (Si ₃ N ₄ film), 11g, 11h ... opening, 11i ... upper oxide film (SiO ₂ film), 11j ... resist film, 11k ... opening, 11m ... bias magnet film, 11n ... GMR multilayer film, 11o ... nitride (Si ₃ N ₄ film), 11p ... polyimide film, 15 ... projection (bank portion), 12 a to 12 d ... X-axis GMR element, 12e to 12h ... Y1 axis GMR element 12i to 12l ... Y2 axis GMR element 15 ... collision , 16 ... Permanent bar magnet array (magnet array), 17 ... Yoke, 17a ... Window, 20 ... Three-axis magnetic sensor of Modification 1, 22a-22d ... X-axis GMR element, 22e-22h ... Y1-axis GMR element, 22i ~ 2 1 ... Y2 axis GMR element, 30 ... Triaxial magnetic sensor of Modification 2, 32a to 32d ... X axis GMR element, 32e to 32h ... Y1 axis GMR element, 32i to 32l ... Y2 axis GMR element, 40 ... Modification 3 Triaxial magnetic sensor, 42a-42d ... X-axis GMR element, 42e-42h ... Y1-axis GMR element, 42i-42l ... Y2-axis GMR element, 50 ... Triaxial magnetic sensor of Example 2, 52a-52d ... X-axis GMR element, 52e to 52h... Y1 axis GMR element, 52i to 52l... Y2 axis GMR element, 55, 56.

Claims (8)

An X-axis sensor in which a plurality of giant magnetoresistance effect elements are bridge-connected, a Y1-axis sensor in which a plurality of giant magnetoresistance effect elements are bridge-connected, and a Y2-axis sensor in which a plurality of giant magnetoresistance effect elements are bridge-connected Is a three-axis magnetic sensor provided in one substrate,
A plurality of protrusions formed on the substrate so that the first slope and the second slope having different inclination directions at equal angles are back to back;
Two sets of giant magnetoresistive effect element groups comprising a plurality of giant magnetoresistive effect element bars arranged on the same side or corner of the substrate on the plane of the substrate, and sides or The two sets of giant magnetoresistive effect element groups composed of a plurality of giant magnetoresistive effect element bars arranged at the corners are magnetized in directions opposite to each other. The X-axis sensor is formed by a full-bridge connection of element groups,
Two sets of giant magnetoresistive effect element groups comprising a plurality of giant magnetoresistive effect element bars formed on the first slope of a plurality of protrusions arranged on the same side or corner of the substrate; Magnetization of two sets of giant magnetoresistive effect element groups comprising a plurality of giant magnetoresistive effect element bars formed on the first slope of a plurality of protrusions arranged on opposite sides or corners. Are magnetized in directions opposite to each other with respect to the Y-axis, and these four sets of giant magnetoresistive effect element groups are connected in a full bridge to form the Y1-axis sensor,
Two sets of giant magnetoresistive effect element groups comprising a plurality of giant magnetoresistive effect element bars formed on the second slope of the plurality of protrusions arranged on the same side or corner of the substrate; Magnetization of two sets of giant magnetoresistive effect element groups comprising a plurality of giant magnetoresistive effect element bars formed on the second slope of a plurality of protrusions arranged on opposite sides or corners. Are magnetized in directions opposite to each other with respect to the Y-axis, and these four sets of giant magnetoresistive effect element groups are connected in a full bridge to form the Y2-axis sensor. Magnetic sensor. A giant magnetoresistive element forming a Y1-axis sensor is formed on each first slope of the plurality of protrusions, and a giant magnetoresistive element constituting the Y1-axis sensor formed on the first slope. The bars are connected in series by a lead formed on the first slope and a lead formed on the second slope facing the first slope continuous with the lead,
A giant magnetoresistive element bar forming a Y2-axis sensor is formed on each second slope of the plurality of protrusions, and a Y2-axis sensor is formed on the second slope. 2. The bars are connected in series by a lead formed on the second slope and a lead formed on the first slope facing the second slope continuous with the lead. The three-axis magnetic sensor described in 1. The lead connecting the giant magnetoresistive effect element bars constituting the Y1-axis sensor and the lead connecting the giant magnetoresistive effect element bars constituting the Y2-axis sensor are bias magnet films. 3. A triaxial magnetic sensor according to 2. The magnetization direction of the pinned layer of the X-axis sensor is formed to be perpendicular to the longitudinal direction of each giant magnetoresistive element bar,
The magnetization direction of the pinned layer of the Y1-axis sensor is formed to be perpendicular to the longitudinal direction of each giant magnetoresistive element bar in the direction along the first slope,
The magnetization direction of the pinned layer of the Y2-axis sensor is formed so as to be perpendicular to the longitudinal direction of each giant magnetoresistive effect element bar in a direction along the second inclined surface. The triaxial magnetic sensor according to claim 3. The magnetization direction of the pinned layer of the X-axis sensor is formed to have a predetermined angle with respect to the longitudinal direction of each giant magnetoresistive element bar,
The magnetization direction of the pinned layer of the Y1-axis sensor is formed to be at a predetermined angle with respect to the longitudinal direction of each giant magnetoresistive element bar in the direction along the first slope,
The magnetization direction of the pinned layer of the Y2-axis sensor is formed so as to be a predetermined angle with respect to the longitudinal direction of each giant magnetoresistive element bar in a direction along the second inclined surface. The triaxial magnetic sensor according to any one of claims 1 to 3.   The triaxial magnetic sensor according to any one of claims 1 to 5, wherein the giant magnetoresistive element bar is formed to have a predetermined angle with respect to each side of the substrate.   The triaxial magnetic sensor according to any one of claims 1 to 5, wherein the giant magnetoresistive element bar is formed in parallel with each side of the substrate and at four corners of the substrate. . An X-axis sensor in which a plurality of giant magnetoresistance effect elements are bridge-connected, a Y1-axis sensor in which a plurality of giant magnetoresistance effect elements are bridge-connected, and a Y2-axis sensor in which a plurality of giant magnetoresistance effect elements are bridge-connected A method of manufacturing a three-axis magnetic sensor provided in one substrate,
On the substrate having a plurality of protrusions formed so that the first inclined surface and the second inclined surface having the same angle and different inclination directions are back-to-back, on the opposite sides or corners of the substrate, the same substrate a plurality of giant magnetoresistive effect element group comprising a plurality of giant magnetoresistive element bars the X-axis sensor on a plane, giant plurality of the Y1-axis sensor on a first inclined surface of said plurality of projections A plurality of giant magnetoresistive effect elements comprising a plurality of giant magnetoresistive effect element groups composed of magnetoresistive effect element bars and a plurality of giant magnetoresistive effect element bars serving as Y2-axis sensors on the second inclined surfaces of the plurality of protrusions. and a giant magnetoresistive effect element group forming step of forming a group of elements,
Two sets of giant magnetoresistive element groups disposed on the same side or corner of the substrate on the plane of the substrate, and two sets of giant magnetoresistive elements disposed on opposite sides or corners of the substrate Each giant magnetoresistive effect element is simultaneously ordered by heating while applying a magnetic field to each giant magnetoresistive effect element formed on the substrate so that the magnetization directions of the effect element groups are magnetized in opposite directions . A method of manufacturing a triaxial magnetic sensor, comprising: a regularized heat treatment step for heat treatment.

Images