JP7488840B2 - Magnetic Field Detection Device - Google Patents

Description

The present invention relates to a magnetic field detection device equipped with a magnetoresistance effect element.

To date, several magnetic field detection devices using magnetoresistance effect elements have been proposed. For example, Patent Document 1 discloses a magnetic field detection device in which the direction of the center line along the direction of current flow in the conductor is different from the direction of the center line along the longitudinal direction of the magnetoresistance effect element (see, for example, Patent Document 1).

JP 2016-1118 A

However, there is a demand for further miniaturization of such magnetic field detection devices.

Therefore, it is desirable to provide a magnetic field detection device that is suitable for miniaturization while maintaining high reliability.

A magnetic field detection device according to one embodiment of the present invention includes a substrate, a first convex portion, a second convex portion, a first magnetoresistance effect film , a second magnetoresistance effect film , a first wiring, and a second wiring. The substrate includes a flat surface. The first convex portion and the second convex portion each include a first inclined surface inclined with respect to the flat surface and a second inclined surface inclined with respect to both the flat surface and the first inclined surface, and are provided on the flat surface. The first magnetoresistance effect film is provided on the first inclined surface. The second magnetoresistance effect film is provided on the second inclined surface. The first wiring connects the first magnetoresistance effect film provided on the first inclined surface of the first convex portion and the first magnetoresistance effect film provided on the first inclined surface of the second convex portion. The second wiring connects the second magnetoresistance effect film provided on the second inclined surface of the first convex portion to the second magnetoresistance effect film provided on the second inclined surface of the second convex portion, where the first wiring and the second wiring intersect on at least one of the first inclined surface and the second inclined surface.

The magnetic field detection device according to one embodiment of the present invention is compact, yet prevents short circuits between the first and second wiring and provides high operational reliability.

1 is a schematic plan view illustrating an example of the overall configuration of a magnetic field detection device according to an embodiment of the present invention. FIG. 2 is a circuit diagram of the magnetic field detection device shown in FIG. 2 is a schematic plan view showing a planar configuration of an element formation region shown in FIG. 1 . 2 is a schematic cross-sectional view showing a cross-sectional configuration of an element formation region shown in FIG. 1 . 4 is a schematic cross-sectional view showing a laminated cross section of the magnetoresistive film shown in FIG. 3. 6 is a schematic plan view for explaining the relationship between the magnetization direction of the magnetization fixed layer and the magnetization direction of the magnetization free layer shown in FIG. 5 . 2 is a schematic cross-sectional view showing a step of a method for manufacturing the magnetic field detection device shown in FIG. 1 . FIG. 7B is a schematic cross-sectional view showing a step following FIG. 7A. FIG. 7C is a schematic cross-sectional view showing a step following FIG. 7B. FIG. 7D is a schematic cross-sectional view showing a step following FIG. 7C. FIG. 7B is a schematic cross-sectional view showing a step following FIG. 7D. FIG. 7B is a schematic cross-sectional view showing a step following FIG. 7E. FIG. 7C is a schematic cross-sectional view showing a step following FIG. 7F. FIG. 7C is a schematic cross-sectional view showing a step following FIG. 7G. FIG. 7C is a schematic cross-sectional view showing a step following FIG. 7H. FIG. 7I is a schematic cross-sectional view showing a step following FIG. 7I. FIG. 7C is a schematic cross-sectional view showing a step following FIG. 7J. 1 is a schematic plan view showing the planar configuration of an element formation region of a magnetic field detection device as a reference example. 9 is a schematic cross-sectional view showing a cross-sectional configuration of an element formation region shown in FIG. 8 . 9 is a schematic cross-sectional view showing a step of a method for manufacturing the magnetic field detection device shown in FIG. 8 . 1 is a schematic plan view showing a configuration example of a portion of a magnetic field detection device according to a first modified example of the present invention; 13 is a schematic plan view showing a configuration example of a portion of a magnetic field detection device according to a second modified example of the present invention. FIG. FIG. 11 is a schematic plan view showing a configuration example of a portion of a magnetic field detection device according to a third modified example of the present invention. 13 is a schematic cross-sectional view showing a configuration example of a portion of a magnetic field detection device as a third modified example shown in FIG. 12. 13 is a first explanatory diagram for explaining the action and effect of the magnetic field detection device as the third modified example shown in FIG. 12 . 13 is a second explanatory diagram for explaining the action and effect of the magnetic field detection device as the third modified example shown in FIG. 12 . FIG. 13 is a schematic plan view showing a configuration example of a portion of a magnetic field detection device according to a fourth modified example of the present invention. 16 is a schematic cross-sectional view showing a configuration example of a portion of a magnetic field detection device as a fourth modified example shown in FIG. 15.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The description will be given in the following order.
1. One embodiment An example of a magnetic field detection device equipped with a bridge circuit including a first magnetoresistance effect film provided on a first inclined surface and a second magnetoresistance effect film provided on a second inclined surface.
2. Modifications

1. One embodiment
[Configuration of magnetic field detection device 100]
First, the configuration of a magnetic field detection device 100 according to an embodiment of the present invention will be described with reference to FIGS.

(Overall configuration of magnetic field detection device 100)
1 is a schematic plan view showing an example of the overall configuration of a magnetic field detection device 100. The magnetic field detection device 100 is a two-axis magnetic detection compass that can detect, for example, changes in a magnetic field in the Y-axis direction and changes in a magnetic field in the Z-axis direction. The magnetic field detection device 100 can be used, for example, as an electronic compass that detects geomagnetism.

As shown in FIG. 1, the magnetic field detection device 100 includes, for example, a substrate 1, magnetic field detection units 2A and 2B, and a terminal portion 3. The substrate 1 extends along an XY plane parallel to the X-axis direction and the Y-axis direction. The thickness direction of the substrate 1 is the Z-axis direction. The X-axis direction, the Y-axis direction, and the Z-axis direction are mutually orthogonal. The magnetic field detection units 2A and 2B are provided adjacent to each other in the central region of the XY plane of the substrate 1. The terminal portion 3 is provided in a peripheral region of the substrate 1 other than the central region where the magnetic field detection units 2A and 2B are provided. The terminal portion 3 is electrically connected to the magnetic field detection units 2A and 2B. The terminal portion 3 is an electrode that enables electrical connection between the magnetic field detection units 2A and 2B and an external device.

The magnetic field detection unit 2A has an element formation region YZ1 and an element formation region YZ4. The element formation region YZ1 and the element formation region YZ4 are arranged, for example, so as to extend in the Y-axis direction and be adjacent to each other in the X-axis direction. A plurality of magnetoresistance effect films MR1 and MR4 , which will be described later, are formed in the element formation region YZ1 and the element formation region YZ4. The magnetic field detection unit 2A further has a conductor C1 that overlaps with the element formation region YZ1 in the Z-axis direction and extends in the Y-axis direction, and a conductor C4 that overlaps with the element formation region YZ4 in the Z-axis direction and extends in the Y-axis direction. The conductors C1 and C4 are configured so that set currents Is1 and Is4 flowing in the +Y direction can be supplied to them. The set currents Is1 and Is4 form a set magnetic field for performing a set operation of the magnetization of the magnetization free layers included in the magnetoresistance effect films MR1 and MR4 , respectively. The conductors C1 and C4 are further configured to be capable of supplying reset currents Ir1 and Ir4 flowing in the −Y direction, respectively. The reset currents Ir1 and Ir4 form reset magnetic fields for resetting the magnetization of the magnetization free layers included in the magnetoresistive films MR1 and MR4 , respectively.

The magnetic field detection unit 2B has an element formation region YZ2 and an element formation region YZ3. The element formation region YZ2 and the element formation region YZ3 are arranged, for example, so as to extend in the Y-axis direction and be adjacent to each other in the X-axis direction. A plurality of magnetoresistance effect films MR2 and MR3 , which will be described later, are formed in the element formation region YZ2 and the element formation region YZ3. The magnetic field detection unit 2B further has a conductor C2 that overlaps with the element formation region YZ2 in the Z-axis direction and extends in the Y-axis direction, and a conductor C3 that overlaps with the element formation region YZ3 in the Z-axis direction and extends in the Y-axis direction. The conductors C2 and C3 are configured so that set currents Is2 and Is3 flowing in the -Y direction can be supplied, respectively. The set currents Is2 and Is3 form a set magnetic field for performing a set operation of the magnetization of the magnetization free layers included in the magnetoresistance effect films MR2 and MR3, respectively. The conductors C2 and C3 are further configured to be capable of supplying reset currents Ir2 and Ir3 flowing in the +Y direction, respectively. The reset currents Ir2 and Ir3 form reset magnetic fields for resetting the magnetization of the magnetization free layers included in the magnetoresistive films MR2 and MR3, respectively.

Figure 2 is a circuit diagram showing an example of the circuit configuration of the magnetic field detection device 100.

(Circuit configuration of magnetic field detection device 100)
2, the magnetic field detection device 100 includes bridge circuits 7L and 7R, difference detectors 8L and 8R, and an arithmetic circuit 9. By using the two bridge circuits 7L and 7R, the magnetic field detection device 100 is able to detect changes in the magnetic field in the Y-axis direction and the Z-axis direction.

The bridge circuit 7L includes four magnetoresistance effect elements 11 to 14. The bridge circuit 7L is formed by connecting the magnetoresistance effect element 11 and the magnetoresistance effect element 12 connected in series, and the magnetoresistance effect element 13 and the magnetoresistance effect element 14 connected in series in parallel with each other. More specifically, in the bridge circuit 7L, one end of the magnetoresistance effect element 11 and one end of the magnetoresistance effect element 12 are connected at a connection point P1, one end of the magnetoresistance effect element 13 and one end of the magnetoresistance effect element 14 are connected at a connection point P2, the other end of the magnetoresistance effect element 11 and the other end of the magnetoresistance effect element 14 are connected at a connection point P3, and the other end of the magnetoresistance effect element 12 and the other end of the magnetoresistance effect element 13 are connected at a connection point P4. Here, the connection point P3 is connected to the power supply Vcc, and the connection point P4 is connected to the ground terminal GND. The connection point P1 and the connection point P2 are each connected to, for example, the input side terminal of the difference detector 8L.

Each of the magnetoresistance effect elements 11 to 14 can detect changes in the signal magnetic field to be detected. For example, the resistance value of the magnetoresistance effect elements 11 and 13 decreases when a signal magnetic field in the +Y direction or a signal magnetic field in the +Z direction is applied, and increases when a signal magnetic field in the -Y direction or a signal magnetic field in the -Z direction is applied. On the other hand, the resistance value of the magnetoresistance effect elements 12 and 14 increases when a signal magnetic field in the +Y direction or a signal magnetic field in the +Z direction is applied, and decreases when a signal magnetic field in the -Y direction or a signal magnetic field in the -Z direction is applied. Therefore, the magnetoresistance effect elements 11 and 13 and the magnetoresistance effect elements 12 and 14 output signals that are, for example, 180° out of phase with each other in response to changes in the signal magnetic field. The signal extracted from the bridge circuit 7L flows into the difference detector 8L. The differential detector 8L detects the potential difference between connection points P1 and P2 when a voltage is applied between connection points P3 and P4, i.e., the difference in the voltage drops that occur in the magnetoresistance effect element 11 and the magnetoresistance effect element 14, and outputs this as a differential signal SL to the calculation circuit 9.

The bridge circuit 7R includes four magnetoresistance effect elements 21 to 24. The bridge circuit 7R is formed by connecting the magnetoresistance effect element 21 and the magnetoresistance effect element 22 connected in series, and the magnetoresistance effect element 23 and the magnetoresistance effect element 24 connected in series in parallel with each other. More specifically, in the bridge circuit 7R, one end of the magnetoresistance effect element 21 and one end of the magnetoresistance effect element 22 are connected at the connection point P5, one end of the magnetoresistance effect element 23 and one end of the magnetoresistance effect element 24 are connected at the connection point P6, the other end of the magnetoresistance effect element 21 and the other end of the magnetoresistance effect element 24 are connected at the connection point P7, and the other end of the magnetoresistance effect element 22 and the other end of the magnetoresistance effect element 23 are connected at the connection point P8. Here, the connection point P7 is connected to the power supply Vcc, and the connection point P8 is connected to the ground terminal GND. The connection points P5 and P6 are each connected to, for example, the input side terminals of the difference detector 8R.

Each of the magnetoresistance effect elements 21 to 24 can detect changes in the signal magnetic field to be detected. For example, the resistance value of the magnetoresistance effect elements 21 and 23 decreases when a signal magnetic field in the +Y direction or a signal magnetic field in the +Z direction is applied, and increases when a signal magnetic field in the -Y direction or a signal magnetic field in the -Z direction is applied. On the other hand, the resistance value of the magnetoresistance effect elements 22 and 24 increases when a signal magnetic field in the +Y direction or a signal magnetic field in the +Z direction is applied, and decreases when a signal magnetic field in the -Y direction or a signal magnetic field in the -Z direction is applied. Therefore, the magnetoresistance effect elements 21 and 23 and the magnetoresistance effect elements 22 and 24 output signals that are, for example, 180° out of phase with each other in response to changes in the signal magnetic field. The signal extracted from the bridge circuit 7R flows into the difference detector 8R. The differential detector 8R detects the potential difference between connection points P5 and P6 when a voltage is applied between connection points P7 and P8, i.e., the difference in the voltage drops that occur in the magnetoresistance effect element 21 and the magnetoresistance effect element 24, and outputs this as a differential signal SR to the calculation circuit 9.

(Configuration of element formation regions YZ1 to YZ4)
Fig. 3 is a schematic plan view showing an enlarged portion of the element formation regions YZ1 to YZ4. Fig. 4 is a schematic cross-sectional view showing an enlarged portion of the element formation regions YZ1 to YZ4. Fig. 4 shows a cross section taken along line IV-IV shown in Fig. 3.

As shown in Figures 3 and 4, element formation regions YZ1 to YZ4 have a substrate 1, multiple protrusions 4, multiple magnetoresistive films MR-A, multiple magnetoresistive films MR-B, a lower layer wiring group 5, and an upper layer wiring group 6. The multiple magnetoresistive films MR-A are connected in series to each other by the lower layer wiring group 5 and the upper layer wiring group 6. The multiple magnetoresistive films MR-B are connected in series to each other by the lower layer wiring group 5 and the upper layer wiring group 6.

The substrate 1 has a flat surface 1S extending along the XY plane. The substrate 1 can be made of, for example, _Al2O3 , _SiO2 , SiN or _the like.

The plurality of protrusions 4 are provided on the flat surface 1S and protrude upward from the flat surface 1S, that is, in the +Z direction. The plurality of protrusions 4 can be formed of an insulating material such as silicon oxide (SiOx). The plurality of protrusions 4 extend, for example, in the V-axis direction and are arranged so as to be adjacent to each other in the W-axis direction. In the example shown in FIG. 3 and FIG. 4, the plurality of protrusions 4 are arranged spaced apart from each other on the flat surface 1S. Therefore, the flat surface 1S of the substrate 1 is exposed between two adjacent protrusions 4 in the W-axis direction. The V-axis direction and the W-axis direction are parallel to the XY plane, but are non-parallel to both the X-axis direction and the Y-axis direction. Specifically, the V-axis direction and the W-axis direction are at an angle of 45° to both the X-axis direction and the Y-axis direction, for example. Furthermore, the V-axis direction and the W-axis direction are perpendicular to each other.

Each of the multiple convex portions 4 has an inclined surface 4A and an inclined surface 4B. The inclined surface 4A and the inclined surface 4B are non-parallel to the flat surface 1S. That is, the inclined surface 4A and the inclined surface 4B are inclined with respect to the flat surface 1S. The inclined surface 4A and the inclined surface 4B form a top portion 4T extending in the V-axis direction, and are inclined so as to approach the flat surface 1S as they move away from each other from the top portion 4T. Therefore, the inclined surface 4A and the inclined surface 4B are non-parallel to each other, and can also be said to be inclined to each other.
The inclined surface 4A is a specific example that corresponds to a "first inclined surface" of the present invention, and the inclined surface 4B is a specific example that corresponds to a "second inclined surface" of the present invention.

A plurality of magnetoresistive effect films MR-A are provided on the inclined surface 4A of each convex portion 4. The plurality of magnetoresistive effect films MR-A are arranged along the V-axis direction, which is the longitudinal direction of the inclined surface 4A. Each of the plurality of magnetoresistive effect films MR-A extends so that its longitudinal direction is the V-axis direction. Similarly, a plurality of magnetoresistive effect films MR-B are provided on the inclined surface 4B of each convex portion 4. The plurality of magnetoresistive effect films MR-B are arranged along the V-axis direction, which is the longitudinal direction of the inclined surface 4B. Each of the plurality of magnetoresistive effect films MR-B extends so that its longitudinal direction is the V-axis direction.
The magnetoresistive film MR-A is a specific example corresponding to the "first magnetoresistive film" of the present invention, and the magnetoresistive film MR-B is a specific example corresponding to the "second magnetoresistive film" of the present invention.

The lower wiring group 5 is provided below the magnetoresistive films MR-A and MR-B, that is, between the magnetoresistive film MR-A and the inclined surface 4A, and between the magnetoresistive film MR-B and the inclined surface 4B. The lower wiring group 5 includes a plurality of lower wirings 51 to 53. The lower wirings 51 each connect the lower surfaces of two magnetoresistive films MR-A that are provided adjacent to each other on the inclined surface 4A of the same convex portion 4. The lower wirings 52 each connect the lower surfaces of two magnetoresistive films MR-B that are provided adjacent to each other on the inclined surface 4B of the same convex portion 4. The lower wirings 53 each connect the lower surfaces of two magnetoresistive films MR-A that are provided on the inclined surfaces 4A of different convex portions 4.

The upper layer wiring group 6 is provided on the upper layer of the magnetoresistive effect films MR-A and MR-B, that is, on the opposite side of the inclined surface 4A as viewed from the magnetoresistive effect film MR-A, and on the opposite side of the inclined surface 4B as viewed from the magnetoresistive effect film MR-B. The upper layer wiring group 6 includes a plurality of upper layer wirings 61 to 63. The plurality of upper layer wirings 61 each connect the upper surfaces of two magnetoresistive effect films MR-A that are provided adjacent to each other on the inclined surface 4A of the same convex portion 4. The plurality of upper layer wirings 62 each connect the upper surfaces of two magnetoresistive effect films MR-B that are provided adjacent to each other on the inclined surface 4B of the same convex portion 4. The plurality of upper layer wirings 63 each connect the upper surfaces of two magnetoresistive effect films MR-B that are provided on the inclined surfaces 4B of different convex portions 4.

In this way, the multiple magnetoresistive films MR-A provided on the inclined surface 4A are connected in series by the lower layer wiring 53, the upper layer wiring 61, and the lower layer wiring 51 to form one magnetoresistive film array. That is, the magnetoresistive film MR-A is sandwiched between the upper layer wiring 61 and the lower layer wiring 51, or between the upper layer wiring 61 and the lower layer wiring 53. The lower layer wiring 53S at the beginning and the lower layer wiring 53E at the end of the magnetoresistive film array including the multiple magnetoresistive films MR-A are connected to different terminal parts 3, respectively.

Similarly, the multiple magnetoresistive films MR-B provided on the inclined surface 4B are connected in series by the upper layer wiring 63, the lower layer wiring 52, and the upper layer wiring 62 to form one magnetoresistive film array. That is, the magnetoresistive film MR-B is sandwiched between the upper layer wiring 63 and the lower layer wiring 52, or between the upper layer wiring 62 and the lower layer wiring 52. The upper layer wiring 63S at the beginning and the upper layer wiring 63E at the end of the magnetoresistive film array including the multiple magnetoresistive films MR-B are connected to different terminal parts 3, respectively.

Here, the lower layer wiring 53 and the upper layer wiring 63 cross at least one of the inclined surface 4A and the inclined surface 4B to form a cross point XP. At the cross point XP, the lower layer wiring 53 and the upper layer wiring 63 may be substantially perpendicular to each other. In the example shown in FIG. 3, the cross points XP are provided on both the inclined surface 4A and the inclined surface 4B. On the other hand, the lower layer wiring 53 and the upper layer wiring 63 are not arranged to cross each other on the flat surface 1S of the substrate 1. The term "cross" as used here refers to a positional relationship in which the upper layer wiring 63 crosses the lower layer wiring 53 when viewed in the Z-axis direction, which is the lamination direction. Furthermore, the term "cross" also includes the upper layer wiring 63 being provided at a position overlapping at least one of both ends in the width direction of the lower layer wiring 53 in the Z-axis direction. In other words, in this embodiment, even if the upper layer wiring 63 and the lower layer wiring 53 run parallel to each other, if the widthwise edge of the lower layer wiring 53 is in a position where it overlaps with the upper layer wiring 63 in the Z-axis direction, the lower layer wiring 53 and the upper layer wiring 63 will intersect.

The lower wirings 51-53 and the upper wirings 61-63 can be made of highly conductive non-magnetic metals such as Al (aluminum), Cu (copper), Ag (silver), Au (gold), and alloys containing these metals. The lower wirings 51-53 and the upper wirings 61-63 may each have a single-layer structure or a multi-layer structure made up of multiple layers. Furthermore, the constituent materials of the lower wirings 51-53 and the upper wirings 61-63 may be the same as or different from each other.

The multiple magnetoresistance effect films MR-A formed in the element formation region YZ1 are connected in series to each other to form the magnetoresistance effect element 11 of the bridge circuit 7L. The multiple magnetoresistance effect films MR-B formed in the element formation region YZ1 are connected in series to each other to form the magnetoresistance effect element 21 of the bridge circuit 7R.

The multiple magnetoresistance effect films MR-A formed in the element formation region YZ2 are connected in series to each other to form the magnetoresistance effect element 12 of the bridge circuit 7L. The multiple magnetoresistance effect films MR-B formed in the element formation region YZ2 are connected in series to each other to form the magnetoresistance effect element 22 of the bridge circuit 7R.

The multiple magnetoresistance effect films MR-A formed in the element formation region YZ3 are connected in series to each other to form the magnetoresistance effect element 13 of the bridge circuit 7L. The multiple magnetoresistance effect films MR-B formed in the element formation region YZ3 are connected in series to each other to form the magnetoresistance effect element 23 of the bridge circuit 7R.

The multiple magnetoresistance effect films MR-A formed in the element formation region YZ4 are connected in series to each other to form the magnetoresistance effect element 14 of the bridge circuit 7L. The multiple magnetoresistance effect films MR-B formed in the element formation region YZ4 are connected in series to each other to form the magnetoresistance effect element 24 of the bridge circuit 7R.

In addition, by combining the above-mentioned magnetic field detection device 100 with a magnetic field detection unit (for convenience, referred to as magnetic field detection unit 2C) capable of detecting changes in the magnetic field in the X-axis direction, a three-axis magnetic detection compass that detects changes in the magnetic field in three axial directions can be realized. The magnetic field detection unit 2C referred to here can be one having substantially the same structure as the above-mentioned magnetic field detection device 100, except that, for example, multiple magnetoresistance effect films are formed on a surface parallel to the flat surface 1S.

Here, the magnetoresistive film MR-A constituting the magnetoresistive element 11 and the magnetoresistive film MR-B constituting the magnetoresistive element 21, i.e., the magnetoresistive film MR-A and the magnetoresistive film MR-B formed in the element formation region YZ1, are collectively referred to as the magnetoresistive film MR1. The magnetoresistive film MR-A constituting the magnetoresistive element 12 and the magnetoresistive film MR-B constituting the magnetoresistive element 22, i.e., the magnetoresistive film MR-A and the magnetoresistive film MR-B formed in the element formation region YZ2, are collectively referred to as the magnetoresistive film MR2. The magnetoresistive film MR-A constituting the magnetoresistive element 13 and the magnetoresistive film MR-B constituting the magnetoresistive element 23, i.e., the magnetoresistive film MR-A and the magnetoresistive film MR-B formed in the element formation region YZ3, are collectively referred to as the magnetoresistive film MR3. Furthermore, the magnetoresistive film MR-A constituting the magnetoresistive element 14 and the magnetoresistive film MR-B constituting the magnetoresistive element 24, i.e., the magnetoresistive film MR-A and the magnetoresistive film MR-B formed in the element formation region YZ4, are collectively referred to as the magnetoresistive film MR4. Figure 5 shows a schematic cross section of the layered structure of the magnetoresistive films MR1 to MR4.

As shown in FIG. 5, the magnetoresistive films MR1 to MR4 have a spin valve structure in which multiple functional films including a magnetic layer are stacked. Specifically, the magnetoresistive films MR1 to MR4 have a stacked structure in which a magnetization pinned layer 31, an intermediate layer 32, and a magnetization free layer 33 are stacked in order. The magnetization pinned layer 31 has a magnetization J31 that is fixed in a predetermined direction. The intermediate layer 32 is a non-magnetic material. The magnetization free layer 33 is configured so that the direction of the magnetization J33 changes depending on the direction of the magnetic flux of the signal magnetic field. The magnetization pinned layer 31, the intermediate layer 32, and the magnetization free layer 33 are all thin films that extend along the inclined surface 4A or the inclined surface 4B. The direction of the magnetization J33 of the magnetization free layer 33 is rotatable within the plane along the inclined surface 4A or the inclined surface 4B. As described above, the magnetoresistive films MR1 to MR4 all extend in the V-axis direction. Therefore, the magnetoresistive films MR1 to MR4 each exhibit shape anisotropy in the V-axis direction. Therefore, the orientation of the magnetization J33 of the magnetization free layer 33 in the initial state is approximately parallel to the V-axis direction.

The pinning direction of the magnetization J31 in each of the magnetoresistive films MR1 to MR4 is set, for example, as shown in FIG. 6. FIG. 6 is a schematic plan view for explaining the relationship between the direction of the magnetization J31 of the magnetization pinned layer 31 and the direction of the magnetization J33 of the magnetization free layer 33 in the initial state for each of the magnetoresistive films MR1 to MR4. As shown in FIG. 6A, in the magnetoresistive film MR1, for example, the direction of the magnetization J31 is the +W direction and the direction of the magnetization J33 is the +V direction. Also, as shown in FIG. 6B, in the magnetoresistive film MR2, for example, the direction of the magnetization J31 is the -W direction and the direction of the magnetization J33 is the -V direction. Also, as shown in FIG. 6C, in the magnetoresistive film MR3, for example, the direction of the magnetization J31 is the +W direction and the direction of the magnetization J33 is the -V direction. Furthermore, as shown in FIG. 6D, in the magnetoresistive film MR4, for example, the direction of magnetization J31 is the -W direction and the direction of magnetization J33 is the +V direction.

Thus, the pinning direction of the magnetization J31 in each of the magnetoresistive films MR1 to MR4 is approximately parallel to the W-axis direction, which is perpendicular to the V-axis direction. Therefore, the sensitivity direction in which the magnetoresistive films MR1 to MR4 are highly sensitive to the signal magnetic field is the W-axis direction. However, the magnetization pinned layers 31 in the magnetoresistive films MR1 and MR3 each have magnetization J31 pinned in the +W direction, whereas the magnetization pinned layers 31 in the magnetoresistive films MR2 and MR4 each have magnetization J31 pinned in the -W direction. Therefore, when the resistance value of each of the magnetoresistive films MR1 and MR3 increases due to the application of a signal magnetic field, the resistance value of each of the magnetoresistive films MR2 and MR4 decreases. Conversely, when the resistance value of each of the magnetoresistive films MR1 and MR3 decreases due to the application of a signal magnetic field, the resistance value of each of the magnetoresistive films MR2 and MR4 increases.

The magnetization pinned layer 31, intermediate layer 32, and magnetization free layer 33 that constitute each of the magnetoresistive films MR1 to MR4 may each have a single-layer structure or a multi-layer structure consisting of multiple layers.

The magnetic pinned layer 31 is made of a ferromagnetic material such as Co (cobalt), CoFe (cobalt iron alloy), or CoFeB (cobalt iron boron alloy). In the magnetoresistive effect films MR1 to MR4, an antiferromagnetic layer (not shown) may be provided on the opposite side of the intermediate layer 32 so as to be adjacent to the magnetic pinned layer 31. Such an antiferromagnetic layer is made of an antiferromagnetic material such as a platinum manganese alloy (PtMn) or an iridium manganese alloy (IrMn). In the magnetoresistive effect films MR1 to MR4, the spin magnetic moment in the +W direction and the spin magnetic moment in the -W direction of the antiferromagnetic layer are in a state where they completely cancel each other out, and act to fix the direction of the magnetization J31 of the adjacent magnetic pinned layer 31 in the +W direction or the -W direction.

When the spin valve structure functions as a magnetic tunnel junction (MTJ) film, the intermediate layer 32 is a non-magnetic tunnel barrier layer made of, for example, magnesium oxide (MgO), and is thin enough to allow a tunnel current based on quantum mechanics to pass through. The intermediate layer 32 may be made of, for example, a platinum group element such as ruthenium (Ru) or gold (Au), or a non-magnetic metal such as copper (Cu). In that case, the spin valve structure functions as a giant magnetoresistance effect (GMR) film.

The magnetization free layer 33 is a soft ferromagnetic layer and is made of substantially the same material. The magnetization free layer 33 is made of, for example, CoFe, NiFe, or CoFeB.

[Operation and Function of Magnetic Field Detection Device 100]
In the magnetic field detection device 100 of this embodiment, the arithmetic circuit 9 can detect a change in the signal magnetic field applied to the magnetic field detection device 100 based on the differential signal SL and the differential signal SR.

(Set/Reset Operation)
Incidentally, in the magnetic field detection device 100, it is desirable to align the magnetization of the magnetization free layer in each magnetoresistance effect element in a predetermined direction before performing the signal magnetic field detection operation. This is to perform a more accurate signal magnetic field detection operation. Specifically, an external magnetic field of known magnitude is applied alternately in a predetermined direction and the opposite direction. This is called the set/reset operation of the magnetization J33 of the magnetization free layer 33.

In the magnetic field detection device 100 of this embodiment, as shown in FIG. 1, a set operation is performed by supplying set currents Is1 to Is4 to the conductors C1 to C4, respectively. By supplying set currents Is1 to Is4 to the conductors C1 to C4, a set magnetic field is generated around the conductors C1 to C4, respectively. As a result, in the magnetic field detection unit 2A, a set magnetic field in the -X direction can be applied to the magnetoresistive effect film MR1 of the magnetoresistive effect elements 11 and 21 and the magnetoresistive effect film MR4 of the magnetoresistive effect elements 14 and 24, respectively. As a result, the magnetization J33 of the magnetization free layer 33 in the magnetoresistive effect films MR1 and MR4 is oriented in the -X direction, and a set operation is performed. On the other hand, in the magnetic field detection unit 2B, a set magnetic field in the +X direction can be applied to the magnetoresistive effect film MR2 of the magnetoresistive effect elements 12 and 22 and the magnetoresistive effect film MR3 of the magnetoresistive effect elements 13 and 23, respectively. As a result, the magnetization J33 of the magnetization free layer 33 in the magnetoresistive films MR2 and MR3 is oriented in the +X direction, and a set operation is performed.

Moreover, a reset operation is performed by supplying reset currents Ir1 to Ir4 to the conductors C1 to C4, respectively. By supplying the reset currents Ir1 to Ir4 to the conductors C1 to C4, a reset magnetic field is generated around the conductors C1 to C4, respectively. As a result, the magnetic field detection unit 2A can apply a reset magnetic field in the +X direction to the magnetoresistive effect films MR1 and MR4, respectively. As a result, the magnetization J33 of the magnetization free layer 33 in the magnetoresistive effect films MR1 and MR4 is oriented in the +X direction, and a reset operation is performed. On the other hand, the magnetic field detection unit 2B can apply a reset magnetic field in the -X direction to the magnetoresistive effect films MR2 and MR3. As a result, the magnetization J33 of the magnetization free layer 33 in the magnetoresistive effect films MR2 and MR3 is oriented in the -X direction, and a reset operation is performed.

[Method of manufacturing the magnetic field detection device 100]
7A to 7I, a method for manufacturing the magnetic field detection device 100 will be described. 7A to 7I are schematic cross-sectional views showing the steps of a method for manufacturing the magnetic field detection device 100, particularly the lower layer wiring group 5, the magnetoresistive films MR-A and MR-B, and the upper layer wiring group 6.

First, a substrate 1 is prepared, and then, as shown in FIG. 7A, a plurality of protrusions 4 each extending in the V-axis direction are formed on a flat surface 1S so as to be aligned in the W-axis direction. Then, a conductive material film 5Z is formed so as to entirely cover the substrate 1 and the plurality of protrusions 4.

Next, as shown in FIG. 7B, a magnetoresistive film MRZ is formed to cover the conductive material film 5Z.

Next, as shown in FIG. 7C, the magnetoresistive film MRZ is selectively etched using a photolithography method or the like to form magnetoresistive films MR-A and MR-B of a predetermined shape. After that, an insulating film Z1 is formed so as to fill in the periphery of the magnetoresistive films MR-A and MR-B.

Next, as shown in FIG. 7D, a two-layer resist RS is formed by sequentially stacking a first resist layer RS1 and a second resist layer RS2 to cover the magnetoresistive films MR-A, MR-B and the insulating film Z1.

Next, as shown in FIG. 7E, the two-layer resist RS is selectively exposed to light, and then the unexposed portions of the two-layer resist RS are removed, for example, by cleaning. This forms a two-layer resist pattern RP that selectively covers the conductive material film 5Z. The two-layer resist pattern RP has a two-layer structure consisting of a first resist pattern RP1 and a second resist pattern RP2.

Next, as shown in FIG. 7F, the insulating film Z1 and the conductive material film 5Z are selectively etched using the two-layer resist pattern RP as a mask. That is, the insulating film Z1 and the conductive material film 5Z are removed from the portions not covered by the two-layer resist pattern RP. As a result, the lower layer wiring group 5 is formed on the inclined surfaces 4A and 4B of each convex portion 4. In addition, in the cross section shown in FIG. 7F, the lower layer wiring 51 is formed on the inclined surface 4A of each convex portion 4, and the lower layer wiring 52 is formed on the inclined surface 4B of each convex portion 4. After that, the insulating film Z2 is formed so as to fill the portions from which the insulating film Z1 and the conductive material film 5Z have been removed, and the two-layer resist pattern RP is lifted off.

7G, a two-layer resist pattern RP-2 is formed on the magnetoresistive films MR-A and MR-B. At this time, the width of the two-layer resist pattern RP-2 in the W-axis direction is set to be narrower than the width of the lower wirings 51 and 52 in the W-axis direction.

Next, as shown in FIG. 7H, an insulating film Z3 is formed so as to cover the entire two-layer resist pattern RP-2, insulating film Z1, and insulating film Z2.

Next, the two-layer resist pattern RP-2 is removed to reveal multiple openings Z3K formed in the insulating film Z3, as shown in FIG. 7I. The upper surfaces of the magnetoresistive films MR-A and MR-B are exposed in the multiple openings Z3K.

7J, the upper layer wiring group 6 (upper layer wirings 61 and 62 of the upper layer wiring group 6 are shown in FIG. 7I) are formed so as to fill the multiple openings Z3K provided in the insulating film Z3. Finally, as shown in FIG. 7K, the insulating film Z4 is formed so as to entirely cover the insulating film Z3 and the upper layer wiring group 6, and the manufacturing of the magnetic field detection device 100 is completed.

[Effects of the magnetic field detection device 100]
Thus, in the magnetic field detection device 100 of this embodiment, the lower layer wiring 53 and the upper layer wiring 63 cross at least one of the inclined surface 4A and the inclined surface 4B, and the lower layer wiring 53 and the upper layer wiring 63 do not cross on the flat surface 1S. That is, as shown in FIG. 3, the cross point XP is on either the inclined surface 4A or the inclined surface 4B, and the cross point XP does not exist on the flat surface 1S. Therefore, the possibility of a short circuit between the lower layer wiring 53 and the upper layer wiring 63 can be reduced. This is because, as will be described below, burrs are easily generated on the lower layer wiring 53 formed on the flat surface 1S, whereas burrs are unlikely to be generated on the lower layer wiring 53 formed on the inclined surface 4A or the inclined surface 4B. Therefore, by having the lower -layer wiring 53 formed on the inclined surface 4A or the upper-layer wiring 63 intersect with the upper-layer wiring 63 formed on the flat surface 1S without having the upper-layer wiring 63 intersect with the lower-layer wiring 53 formed on the flat surface 1S, it is possible to avoid unintentional electrical connection between the lower -layer wiring 53 and the upper-layer wiring 63 due to burrs on the lower-layer wiring 53.

FIG. 8 is a plan view showing a schematic representation of an element formation region of a magnetic field detection device 1000 as a reference example, and corresponds to FIG. 3 of the present embodiment. As shown in FIG. 8, the magnetic field detection device 1000 as a reference example has cross points XP1 and XP2 formed on the flat surface 1S of the substrate 1. FIG. 9A is a schematic cross-sectional view showing a cross section in the direction of the arrow along the IX-IX cutting line shown in FIG. 8. As shown in FIG. 9A, at the cross point XP1, a short circuit portion SH is formed via a burr BR. The burr BR occurs at the end of the lower layer wirings 52, 53 on the flat surface 1S. This burr BR occurs during patterning of the lower layer wirings 52, 53. FIG. 9B is a schematic cross-sectional view showing one step of the manufacturing method of the magnetic field detection device 1000, and in particular shows the state immediately after selective etching of the lower layer wirings 52, 53 is performed. The lower wirings 52 and 53 of the magnetic field detection device 1000 of the reference example are patterned by selectively etching the conductive material film using a two-layer resist pattern RP, similar to the lower wiring group 5 of the magnetic field detection device 100 of the present embodiment. However, in the magnetic field detection device 1000 of the reference example, a part of the lower wirings 52 and 53 extends so as to cover not only the inclined surfaces 4A and 4B but also a part of the flat surface 1S. In general, the thickness of the resist pattern attached to the flat surface is often thicker than the thickness of the resist pattern attached to the inclined surface. Therefore, as shown in FIG. 9B, the thickness of the first resist pattern RP1 formed on the flat surface 1S is often thicker than the thickness of the first resist pattern RP1 formed on the inclined surfaces 4A and 4B. When the conductive material film is selectively etched using the two-layer resist pattern RP including such a first resist pattern RP1, the conductive material film removed from the end surface of the first resist pattern RP1 is reattached to the end surface of the first resist pattern RP1 as shown in FIG. 9B, forming a burr BR in contact with the end surface of the lower wirings 52 and 53. The burrs BR often remain on the flat surface 1S as residues even after the two-layer resist pattern RP is lifted off. When the upper layer wiring 63 is then formed, the burrs BR come into contact with the upper layer wiring 63. Since the burrs BR also come into contact with the end faces of the lower layer wirings 52 and 53, the upper layer wiring 63 and the lower layer wirings 52 and 53 end up being electrically connected to each other.

In contrast, in the magnetic field detection device 100 of this embodiment, the cross points XP are not present on the flat surface 1S. Therefore, even if a burr BR is formed, the upper layer wiring group 6 is not provided at a position overlapping the burr BR in the Z-axis direction. Therefore, a short circuit between the lower layer wiring group 5 and the upper layer wiring group 6 can be avoided.

For the above reasons, the magnetic field detection device 100 can improve the density of magnetoresistance effect elements per unit area while suppressing the occurrence of short circuits. Therefore, the magnetic field detection device 100 of this embodiment can be made smaller in size without compromising operational reliability.

2. Modified Examples
Although the present invention has been described above with reference to the embodiments, the present invention is not limited to the above-mentioned embodiments and various modifications are possible. For example, in the above-mentioned embodiments , a full-bridge circuit is formed using four magnetoresistance effect elements, but in the present invention, for example, a half-bridge circuit may be formed using two magnetoresistance effect elements. Furthermore, the shapes and dimensions of the multiple magnetoresistance effect films may be the same as or different from each other. Furthermore, the dimensions of each component and the layout of each component are merely examples and are not limited to these.

(First Modification)
In the above embodiment, as shown in FIG. 3, the region where the upper layer wiring group 6 and the lower layer wiring group 5 overlap in the Z-axis direction is provided only on the inclined surfaces 4A and 4B of the convex portion 4. However, the present invention is a concept that also includes, for example, a magnetic field detection device 100A as a first modified example shown in FIG. 10. FIG. 10 is a schematic plan view showing a part of the magnetic field detection device 100A as a first modified example of the present invention. In the magnetic field detection device 100A of FIG. 10, the region where the upper layer wiring 63 and the lower layer wiring 53 overlap in the Z-axis direction is provided on the flat surface 1S where the convex portion 4 is not formed. However, in the magnetic field detection device 100A, the upper layer wiring 63 and the lower layer wiring 53 run parallel to each other in substantially the same direction (for example, the W-axis direction) on the flat surface 1S without intersecting each other. That is, the upper wiring 63 is provided on the flat surface 1S and includes a flat portion 63S extending in the W-axis direction, and the lower wiring 53 is provided on the flat surface 1S and includes a flat portion 53S extending in the W-axis direction. In the magnetic field detection device 100A shown in FIG. 10, the flat portion 53S is connected to the portion 53A of the lower wiring 53 provided on the inclined surface 4A in a substantially L-shape in plan view. Similarly, the flat portion 63S is connected to the portion 63B of the upper wiring 63 provided on the inclined surface 4B in a substantially L-shape in plan view. The flat portion 53S of the lower wiring 53 is provided between the flat portion 63S of the upper wiring 63 and the flat surface 1S so as to overlap in the Z-axis direction. Furthermore, the width W53 in the V-axis direction of the lower wiring 53S provided on the flat surface 1S is wider than the width W63 in the V-axis direction of the upper wiring 63S overlapping it in the Z-axis direction, and both ends of the upper wiring 63S in the V-axis direction are located inside both ends of the lower wiring 53S in the V-axis direction. Therefore, the upper wiring 63 does not exist in a position where it overlaps both ends of the lower wiring 53 in the Z-axis direction. Therefore, even if burrs are generated at both ends of the flat portion 53S of the lower wiring 53, a short circuit between the upper wiring 63 and the lower wiring 53 through such burrs can be avoided. Thus, the effect of the present invention is obtained. In addition, in the magnetic field detection device 100A, both of the inclined surfaces 4A and 4B are inclined in the W-axis direction in which the flat portion 63S of the lower wiring 63 and the flat portion 53S of the upper wiring 53 provided on the flat surface 1S extend. Therefore, the lower layer wiring 53 and the upper layer wiring 63 can be laid out by efficiently utilizing a limited area, rather than extending in a diagonal direction, for example, in a direction different from both the W-axis direction and the V-axis direction, which contributes to the miniaturization of the magnetic field detection device 100A. Furthermore, the efficient layout of the lower layer wiring 53 and the upper layer wiring 63 may result in a reduction in the length of each of the lower layer wiring 53 and the upper layer wiring 63. Furthermore, the adhesion of re-deposition during the etching process when forming the lower layer wirings 51 to 53 on the inclined surfaces 4A and 4B extending in the V-axis direction can be reduced. Note that the W-axis direction is a specific example corresponding to the "first direction" of the present invention, and the V-axis direction is a specific example corresponding to the "second direction" of the present invention. Furthermore, the flat portion 53S is a specific example corresponding to the "first flat portion" of the present invention, and the flat portion 63S is a specific example corresponding to the "second flat portion" of the present invention. Also, the portion 53A is a specific example corresponding to the "first inclined portion" of the present invention.

(Second Modification)
In the magnetic field detection device 100A as the first modified example shown in FIG. 10, the flat portion 53S and the flat portion 63S are overlapped with each other, but the present disclosure is not limited to this. For example, as in the magnetic field detection device 100B as the second modified example shown in FIG. 11, the flat portion 53S and the flat portion 63S provided on the flat surface 1S may extend in the W-axis direction at positions where they do not overlap with each other. In the magnetic field detection device 100A shown in FIG. 10, the flat portion 53S is connected to the portion 53A provided on the inclined surface 4A of the lower wiring 53 in a substantially L-shape in plan view, but the present invention is not limited to this. As shown in FIG. 11, the flat portion 53S may be connected to the portion 53A provided on the inclined surface 4A of the lower wiring 53 in a substantially T-shape in plan view. Similarly, in the magnetic field detection device 100A shown in FIG. 10, the flat portion 63S is connected to the portion 63B of the upper layer wiring 63 provided on the inclined surface 4B in a substantially L-shape in plan view, but the present invention is not limited thereto. As shown in FIG. 11, the flat portion 63S may be connected to the portion 63B of the upper layer wiring 63 provided on the inclined surface 4B in a substantially T-shape in plan view. FIG. 11 is a schematic plan view showing a part of the magnetic field detection device 100B as a second modified example of the present invention. According to the magnetic field detection device 100B of FIG. 11, by having the above-mentioned configuration, an efficient layout of the lower layer wiring 53 and the upper layer wiring 63 is possible, and as a result, the length of each of the lower layer wiring 53 and the upper layer wiring 63 may be shortened. In particular, unlike the magnetic field detection device 100A shown in FIG. 10, according to the magnetic field detection device 100B of FIG. 11, the flat portion 53S can be connected to a middle portion other than the end portion in the extension direction (V-axis direction) of the portion 53A provided on the inclined surface 4A. In addition, according to the magnetic field detection device 100B of FIG. 11, the flat portion 63S can be connected to the middle portion other than the end portion in the extension direction (V-axis direction) of the portion 63B provided on the inclined surface 4B. Therefore, compared with the magnetic field detection device 100A shown in FIG. 10, the degree of freedom in the layout of the lower layer wiring group 5 and the upper layer wiring group 6 is improved, and it is also advantageous in reducing the wiring resistance. Furthermore, according to the magnetic field detection device 100B of FIG. 11, the adhesion of redeposits during the etching process when forming the lower layer wirings 51 to 53 on the inclined surfaces 4A and 4B extending in the V-axis direction can be reduced. Here, it is preferable that the extension direction of the flat portion 53S is substantially perpendicular to the extension direction of the portion 53A. This is because the amount of redeposits can be further reduced compared with the case where the extension direction of the flat portion 53S is inclined with respect to the extension direction of the portion 53A (when the extension direction is inclined (greater than 0° and less than 90°)). Therefore, the possibility that the lower layer wiring 53 and the upper layer wiring 63 are unintentionally conducted can be more sufficiently reduced.

(Third Modification)
In the magnetic field detection device 100 according to the embodiment shown in FIG. 3, the lower wiring group 5 and the upper wiring group 6 provided on the inclined surfaces 4A and 4B, respectively, are conductors that electrically connect the magnetoresistance effect films MR-A and MR-B. However, the present disclosure is not limited to this. For example, as in the magnetic field detection device 100C as a third modified example shown in FIG. 12 and FIG. 13, one or more dummy patterns DB may be provided on the inclined surface 4B. FIG. 12 is a schematic plan view showing a part of the magnetic field detection device 100C as a third modified example of the present invention. Also, FIG. 13 is a cross-sectional view taken along the line XIII-XIII shown in FIG. 12 in the direction of the arrow. As shown in FIG. 12 and FIG. 13, by providing one or more dummy patterns DB on the inclined surface 4B, when the lower wirings 51 and 53 are formed on the inclined surfaces 4A adjacent to each other and facing each other across the flat surface 1S in the W-axis direction, the generation of burrs on the edges of the lower wirings 51 and 53 can be suppressed, or even if burrs are generated, the size of the burrs can be reduced.

Here, as shown in Fig. 14A and Fig. 14B as a reference example, a case will be described in which, of the inclined surfaces 4A and 4B adjacent to each other and facing each other across the flat surface 1S in the W-axis direction, the lower wiring 53 is formed on the inclined surface 4A, while the lower wiring and the dummy pattern are not formed on the inclined surface 4B. More specifically, as shown in Fig. 14A and Fig. 14B, of the two convex parts 4L and 4R adjacent to each other in the W-axis direction, the lower wiring 53 and the magnetoresistance effect film MR-A are formed on the inclined surface 4A of the convex part 4L on the left side of the paper, and the lower wiring and the magnetoresistance effect film are not formed on the inclined surface 4B of the convex part 4R on the right side of the paper. In this case, first, a conductive material film 5Z covering the entire substrate 1 and the multiple convex parts 4, the magnetoresistance effect films MR-A, MR-B, and the insulating film Z1 are formed, and then, as shown in Fig. 14A, a two-layer resist pattern RP is formed to selectively cover the conductive material film 5Z. The two-layer resist pattern RP is provided on the inclined surfaces 4A and 4B of the convex portion 4L. Next, as shown in FIG. 14B, the two-layer resist pattern RP is used as a mask to selectively etch the insulating film Z1 and the conductive material film 5Z. That is, the insulating film Z1 and the conductive material film 5Z that are not covered by the two-layer resist pattern RP are removed. As a result, the lower wiring 53 and the lower wiring 52 are formed on the inclined surfaces 4A and 4B of the convex portion 4L, respectively. At this time, redeposits RD are deposited on the end faces of the two-layer resist pattern RP provided on the inclined surface 4A. The redeposits RD are mainly the insulating film Z1 and the conductive material film 5Z formed on the inclined surface 4B of the opposing convex portion 4R that are etched and scattered. Such redeposits may remain as burrs on the edge of the lower wiring 53 formed on the inclined surface 4A of the convex portion 4L even after the two-layer resist pattern RP is lifted off. Such burrs may hinder the formation of the upper layer wiring group 6 formed as an upper layer of the lower layer wiring 53, or may cause an unintended short circuit between the lower layer wiring 53 and the upper layer wiring group 6. Therefore, by providing a dummy pattern DB on the inclined surface 4B as in the magnetic field detection device 100C as this modified example, the generation of burrs in the lower layer wiring 53 formed on the inclined surface 4A opposite to the inclined surface 4B on which the dummy pattern DB is provided is effectively suppressed.

13, in the height direction (Z-axis direction) perpendicular to the flat surface 1S, for example, the top end position DBH of the dummy pattern DB based on the flat surface 1S may be substantially equal to the top end position 53H of the lower layer wiring 53 based on the flat surface 1S. This is because, compared to the case where the top end position DBH and the top end position 53H are different in the Z-axis direction, the generation of burrs in the lower layer wiring 53 can be more effectively suppressed.

The dummy pattern DB is a structure that is not connected to electronic devices such as magnetoresistive films MR-A and MR-B, or wirings for communication or power supply such as the lower layer wiring group 5 and the upper layer wiring group 6. That is, for example, the dummy pattern DB may be made of a conductive material, but the dummy pattern DB is insulated from both the lower layer wiring group 5 and the upper layer wiring group 6. The material of the dummy pattern DB may be the same as the material of the lower layer wiring group 5 and the material of the upper layer wiring group 6. This is because the dummy pattern DB can be formed simultaneously with the lower layer wiring group 5 or the upper layer wiring group 6, improving ease of manufacture. In this modification, one or more dummy patterns DB are provided on the inclined surface 4B, but in the present invention, one or more patterns that can be used as real wiring may be provided on the inclined surface 4B. The one or more patterns that can be used as real wiring are third wirings insulated from both the lower layer wiring group 5 and the upper layer wiring group 6. That is, the "pattern" of the present invention is a concept that includes both a dummy pattern that is not used as actual wiring, and a pattern that can be used as actual wiring.

(Fourth Modification)
Furthermore, in the present invention, dummy patterns may be formed on both of the two opposing inclined surfaces. For example, as in the magnetic field detection device 100D as a fourth modified example shown in FIG. 15 and FIG. 16, one or more dummy patterns DB may be provided on the inclined surface 4B, and one or more dummy patterns DA may be provided on the inclined surface 4A. FIG. 15 is a schematic plan view showing a part of the magnetic field detection device 100D as a fourth modified example of the present invention. FIG. 16 is a cross-sectional view taken along the line XVI-XVI shown in FIG. 15 in the direction of the arrow. In this case, in the height direction (Z-axis direction) perpendicular to the flat surface 1S, for example, the upper end position DAH of the dummy pattern DA based on the flat surface 1S may be substantially equal to the upper end position DBH of the dummy pattern DB based on the flat surface 1S.

As in the magnetic field detection device 100D, by providing the dummy patterns DA and DB on both the inclined surfaces 4A and 4B facing each other, the distribution density of the resist pattern formed to cover the flat surface 1S and the convex portion 4 when forming the lower layer wiring group 5 can be homogenized. That is, the density difference between the region where the resist pattern covering the flat surface 1S and the convex portion 4 is formed at high density and the region where the resist pattern covering the flat surface 1S and the convex portion 4 is formed at low density can be reduced. As a result, the dimensions and shape of the resist pattern when performing exposure and development can be controlled with higher accuracy. Therefore, the variation in the dimensions of the lower layer wiring group 5 formed using the resist pattern can be reduced. In addition, when forming the lower layer wiring 53 formed to cross the flat surface 1S in the region sandwiched between two adjacent convex portions 4, the influence of exposure halation from the inclined surface 4A or the inclined surface 4B can be reduced. If there is exposure halation from such an inclined surface 4A or 4B, the shape of the resist pattern for patterning the lower layer wiring 53 may be distorted, and in that case, the dimensional accuracy of the lower layer wiring 53 may be reduced. Therefore, as in the magnetic field detection device 100D, by providing a dummy pattern DA and a dummy pattern DB on both the inclined surface 4A and the inclined surface 4B facing each other, it is possible to reduce halation during exposure and prevent a decrease in the dimensional accuracy of the lower layer wiring 53. In addition, in this modified example, one or more dummy patterns DA are provided on the inclined surface 4A and one or more dummy patterns DB are provided on the inclined surface 4B, but in the present invention, one or more patterns usable as actual wiring may be provided on each of the inclined surfaces 4A and 4B. The one or more patterns usable as actual wiring are third wirings insulated from both the lower layer wiring group 5 and the upper layer wiring group 6. That is, the "pattern" of the present invention is a concept that includes both a dummy pattern that is not used as actual wiring and a pattern that can be used as actual wiring.

In the schematic plan view shown in FIG. 3, the planar shape of each convex portion 4 is a rectangle with the V-axis direction as the longitudinal direction, but the planar shape of the convex portion 4 in this embodiment is not limited to this. The convex portion 4 may have a racetrack-shaped contour with both longitudinal ends each having a semicircular shape. In addition, FIG. 4 illustrates a case in which both inclined surfaces 4A and 4B are flat, but both inclined surfaces 4A and 4B may be curved surfaces. In the example shown in FIG. 4, the top portion 4T is the apex of the corner where the inclined surfaces 4A and 4B intersect, but the top portion 4T may have a rounded cross section.

100...magnetic field detection device, 1...substrate, 2A, 2B...magnetic field detection unit, 3...terminal portion, 4...convex portion, 40...top portion, 41, 42...inclined surface, 5...lower wiring group, 51-53...lower wiring, 6...upper wiring group, 61-63...upper wiring, 31...magnetic pinned layer, 32...intermediate layer, 33...magnetic free layer, 7L, 7R...bridge circuit, 8L, 8R...differential detector, 9...arithmetic circuit, DA, DB...dummy pattern, Is1-Is4...set current, Ir1-Ir4...reset current, MR1-MR4...magnetoresistive film, YZ1-YZ4...element formation region.

Claims (12)

a substrate including a planar surface;
a first inclined surface inclined with respect to the flat surface, and a second inclined surface inclined with respect to both the flat surface and the first inclined surface, a first convex portion and a second convex portion provided on the flat surface;
a first magnetoresistive film provided on the first inclined surface;
a second magnetoresistive film provided on the second inclined surface;
a first wiring connecting the first magnetoresistance effect film provided on the first inclined surface of the first convex portion and the first magnetoresistance effect film provided on the first inclined surface of the second convex portion;
the second magnetoresistance effect film provided on the second inclined surface of the first convex portion and a second wiring connecting the second magnetoresistance effect film provided on the second inclined surface of the second convex portion,
A magnetic field detection device, wherein the first wiring and the second wiring cross each other on at least one of the first inclined surface and the second inclined surface. the first convex portion and the second convex portion are disposed apart from each other on the flat surface,
The magnetic field detection device according to claim 1 , wherein the first wiring and the second wiring do not cross each other on the flat surface, but cross each other on at least one of the first inclined surface and the second inclined surface. a substrate including a planar surface;
a first inclined surface inclined with respect to the flat surface, and a second inclined surface inclined with respect to both the flat surface and the first inclined surface; and first to third convex portions provided on the flat surface;
a first magnetoresistance effect film provided on the first inclined surface of each of the first to third convex portions;
a second magnetoresistance effect film provided on the second inclined surface of each of the first to third convex portions;
a first wiring connecting the first magnetoresistance effect film provided on the first inclined surface of the first convex portion and the first magnetoresistance effect film provided on the first inclined surface of the second convex portion;
a second wiring that connects the second magnetoresistance effect film provided on the second inclined surface of the first convex portion and the second magnetoresistance effect film provided on the second inclined surface of the third convex portion;
having
The first wiring and the second wiring intersect at least one of the first inclined surface of the first protrusion and the second inclined surface of the first protrusion.
Magnetic field detection device. the first convex portion, the second convex portion, and the third convex portion are disposed apart from one another on the flat surface,
The first wiring and the second wiring do not intersect on the flat surface, but intersect at least one of the first inclined surface of the first convex portion and the second inclined surface of the first convex portion.
4. The magnetic field detection device according to claim 3. The magnetic field detection device according to claim 1 , wherein the first wiring and the second wiring are substantially perpendicular to each other. the first wiring includes a first flat portion provided on the flat surface and extending in a first direction;
the second wiring includes a second flat portion provided on the flat surface and extending in the first direction;
The first flat portion is provided between the second flat portion and the flat surface,
In a second direction perpendicular to the first direction and parallel to the flat surface, a width of the first flat portion is wider than a width of the second flat portion;
The magnetic field detection device according to claim 1 , wherein both end edges of the second flat portion in the second direction are located more inward than both end edges of the first flat portion in the second direction. The magnetic field detection device according to claim 6 , wherein the first inclined surface and the second inclined surface are both inclined in the first direction. The magnetic field detection device according to claim 7 , wherein the first flat portion includes protrusions extending in a thickness direction perpendicular to the flat surface near both end edges in the second direction. the first wiring connects a lower surface of the first magnetoresistive film provided on the first inclined surface of the first convex portion to a lower surface of the first magnetoresistive film provided on the first inclined surface of the second convex portion;
The magnetic field detection device described in claim 1 or claim 2, wherein the second wiring connects an upper surface of the second magnetoresistive effect film provided on the second inclined surface of the first convex portion to an upper surface of the second magnetoresistive effect film provided on the second inclined surface of the second convex portion . the first wiring connects a lower surface of the first magnetoresistive film provided on the first inclined surface of the first convex portion to a lower surface of the first magnetoresistive film provided on the first inclined surface of the second convex portion;
The second wiring connects an upper surface of the second magnetoresistance effect film provided on the second inclined surface of the first convex portion and an upper surface of the second magnetoresistance effect film provided on the second inclined surface of the third convex portion.
The magnetic field detection device according to claim 3 or 4. the first wiring includes a first flat portion provided on the flat surface and extending in a first direction, and a first inclined portion provided on the first inclined surface or the second inclined surface and extending in a second direction;
The magnetic field detection device according to claim 1 , wherein the first flat portion is connected to a middle portion of the first inclined portion in the second direction. The magnetic field detection device according to claim 11 , wherein the first direction and the second direction are substantially perpendicular to each other.

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