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JP4672902B2 - Power semiconductor module - Google Patents

Power semiconductor module Download PDF

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Publication number
JP4672902B2
JP4672902B2 JP2001141057A JP2001141057A JP4672902B2 JP 4672902 B2 JP4672902 B2 JP 4672902B2 JP 2001141057 A JP2001141057 A JP 2001141057A JP 2001141057 A JP2001141057 A JP 2001141057A JP 4672902 B2 JP4672902 B2 JP 4672902B2
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JP
Japan
Prior art keywords
power semiconductor
semiconductor module
chip component
chip
thermal conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001141057A
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Japanese (ja)
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JP2002343935A (en
Inventor
茂 岡本
秀久 橘
成治 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sansha Electric Manufacturing Co Ltd
Original Assignee
Sansha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sansha Electric Manufacturing Co Ltd filed Critical Sansha Electric Manufacturing Co Ltd
Priority to JP2001141057A priority Critical patent/JP4672902B2/en
Publication of JP2002343935A publication Critical patent/JP2002343935A/en
Application granted granted Critical
Publication of JP4672902B2 publication Critical patent/JP4672902B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は電力用半導体チップやチップ抵抗器などのチップ部品を一つのモジュール内にはんだ付けして形成した電力用半導体モジュールに関する。
【0002】
【従来の技術】
図4に従来の電力用半導体モジュールの断面図を示し,図4によって従来の構造を説明する。表面に銅回路3を形成した電気絶縁層2で金属基板1の片面を覆い,銅回路3のランド5にチップ部品4がはんだ8で固着され,回路基板11が完成し,この回路基板11を樹脂ケース21で囲み,上からエポキシ樹脂等の封止材22で充填されて完成する電力用半導体モジュールは電力制御等の用途に用いられる。チップ部品4の下部と金属基板上の電気絶縁層とで挟まれた隙間6は熱伝導率が良くない空気で充たされている。チップ部品4で発生した熱が熱伝導で主として放出する経路は,微少断面のはんだ8,ランド5,電気絶縁層2,とその下層の金属基板1へと熱伝導して該金属基板から外部に放出していた。電力用半導体
モジュールに通電する電力が大きくなると内部で発生する熱が増し,チップ部品の接続部のはんだ8の温度が高くなり通電時と停止時との温度差が大きくなってはんだクラックが発生して接続不良となって信頼性低下の原因となっていた。
【0003】
【発明が解決しようとする課題】
大電力を通電する電力用半導体モジュールでは,はんだクラックが発生しやすくなり寿命が低下するので,発生した熱の放出が効果的に行われる電力用半導体モジュールの提供が本発明の課題である。
【0004】
【課題を解決するための手段】
チップ部品から発生する熱を効果的に放出する為に,熱伝導率が悪い空気層の厚みを極小にすることに着眼した。金属基板上に電気絶縁層を介して設けられた銅回路のランドに,チップ部品をはんだ付けし,樹脂ケースで囲まれ,該樹脂ケースの内部に封止材が注入硬化される電力用半導体モジュールにおいて,対向する一対のランド間の中間位置で,銅回路の下層の電気絶縁層と,上記チップ部品とで挟まれる隙間に対して,高熱伝導性電気絶縁部材を圧入させることによってチップ部品表面から直に金属基板に熱伝導する経路を形成して,従来の熱伝導経路に加えて熱放出させるようにした。
【0005】
請求項2に関しては,高熱伝導性電気絶縁部材はチップ部品及び部品取付基板に対して密着させる為に,弾性を有するゴム状の有機化合物又は,無機物が混錬されたゴム状の有機化合物で形成された部材とした。固体の電気絶縁物である有機化合物は空気より熱伝導率が大きい。シリコンカーバイドのような無機物は熱伝導率が大きくて,これをシリコンゴムで混錬して弾性体の高熱伝導性電気絶縁部材を得て,チップ部品及び部品取付基板に対して密着させるように挟み込むと効果的な熱伝合経路が形成される。
【0007】
【発明の実施の形態】
本発明の実施の一形態を図1およびその要部拡大図である図2によって説明する。金属基板1の上に電気絶縁層2を介して銅回路3が形成され,4のチップ部品がはんだ付けされるランド5が銅回路に設けられている。クリームはんだを該ランドに印刷塗布し,チップ部品の端子が該クリームはんだ上に載置された部分に光ビームを照射することで局部加熱されてはんだが融解し,照射を停止して冷却すると,はんだ8が硬化し,その後,必要部位にボンディングワイヤ7でボンディングすると回路が接続されて回路基板11が完成する。この回路基板を底部となるように樹脂ケース21で囲んで固着し,上からエポキシ樹脂などの封止材22を注入して加熱硬化する。このようにして形成した電力用半導体モジュールは使用電力が大きくなるに従い内部発熱量が多くなるので,この熱を効果的に放熱させる為にチップ部品の銅回路への固着の前に次の工程を行う。チップ部品4が固着される一対のランド5とランド51との間にゴム状の有機化合物に高熱伝導性の無機物,例えばシリコンカーバイドやベリリヤセラミックスを混錬してシート状にした高熱伝導性電気絶縁部材9(以下、伝熱部材9と称する)を挟み込むようにしてチップ部品を載置しランドのクリームはんだに光ビームを照射して加熱し,はんだ付けが完了する。固着したチップ部品4の下部と回路基板との間の隙間6には弾性を有する伝熱部材9が,はさみ込まれておりチップの温度上昇は,従来の伝熱部材9が無い場合より低い値となり半導体モジュールの寿命,信頼性の向上に寄与した。
【0008】
他の実施の形態では,図3に示すように,金属基板1の上に固着した電気絶縁層2はベリリヤセラミックスであり,熱伝導率は0.58を有し,アルミナの熱伝導率0.070に対し8倍以上も高い。(熱伝導率の単位は,キロカロリー/平方センチ・秒・℃)このような電気絶縁物に接してチップ部品を搭載することに着目したもので,金属基板1の上にベリリヤセラミックスの電気絶縁層2を介して銅回路3が形成され,該銅回路の厚みに相当する高さの部品載置台10が電気絶縁層2に形成されている。チップ部品4がこの部品載置台に載せられてランド5にはんだ付けされる。クリームはんだを該ランドに印刷塗布し,チップ部品の端子が該クリームはんだ上に載置された基板全体を加熱してもよく,絶縁物が無機物のみであり,高い温度に耐えるので,光ビームを照射することで局部加熱しなくてもよい。その後,必要部位にボンディングワイヤ7でボンディングすると回路が接続されて回路基板11が完成する。この回路基板11を底部となるように樹脂ケース21で囲んで固着し,上からエポキシ樹脂などの封止材22を注入して加熱硬化する
【0009】
図3に示した実施例で寸法精度をゆるめてコストを下げる為には,チップ部品4が直に接している部品載置台11の上に隙間が出来るので,隙間にシリコンオイルのような毛細管現象で吸い上げて保持されるような耐熱性の液体を充顛させることも有効である。
【0010】
【発明の効果】
従来,チップ部品と回路基板の隙間に空気が断熱していた部分に対して,熱伝導性を向上させたので,従来と同一の電力容量でのモジュールの回路基板サイズを小さくすることが出来たのでコストが削減出来て,省資源にも寄与した。チップ部品の温度を低く抑える事ができたので半導体モジュール全体の寿命,信頼性の向上に寄与している。
【図面の簡単な説明】
【図1】 本発明の実施形態を示す断面図である。
【図2】 本発明の実施形態を示す要部拡大図である。
【図3】 本発明の他の実施形態を示す断面図である。
【図4】 従来の回路装置の構造を示す断面図である。
【符号の説明】
1 金属基板
2 電気絶縁層
3 銅回路
4 チップ部品
5 ランド
6 隙間
7 ボンディングワイヤ
8 はんだ
9 高熱伝導性電気絶縁部材(伝熱部材)
10 部品載置台
11 回路基板
21 樹脂ケース
22 封止材
51 ランド
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a power semiconductor module formed by soldering chip components such as a power semiconductor chip and a chip resistor in one module.
[0002]
[Prior art]
FIG. 4 shows a cross-sectional view of a conventional power semiconductor module, and the conventional structure will be described with reference to FIG. One surface of the metal substrate 1 is covered with the electrical insulating layer 2 having the copper circuit 3 formed on the surface, the chip component 4 is fixed to the land 5 of the copper circuit 3 with the solder 8, and the circuit board 11 is completed. A power semiconductor module which is enclosed by a resin case 21 and filled with a sealing material 22 such as an epoxy resin from above is used for power control and the like. A gap 6 sandwiched between the lower part of the chip component 4 and the electrical insulating layer on the metal substrate is filled with air having poor heat conductivity. The path through which the heat generated by the chip component 4 is mainly released by heat conduction is the heat conduction to the solder 8, the land 5, the electrical insulating layer 2, and the metal substrate 1 below the fine cross section, and from the metal substrate to the outside. It was released. When the electric power supplied to the power semiconductor module increases, the heat generated inside increases, the temperature of the solder 8 at the connection part of the chip component increases, and the temperature difference between energized and stopped increases, causing solder cracks. As a result, the connection was poor and the reliability was reduced.
[0003]
[Problems to be solved by the invention]
In a power semiconductor module that conducts a large amount of power, solder cracks are likely to occur and the life is shortened. Therefore, it is an object of the present invention to provide a power semiconductor module in which the generated heat is effectively released.
[0004]
[Means for Solving the Problems]
We focused on minimizing the thickness of the air layer with poor thermal conductivity in order to effectively release the heat generated from the chip components. A power semiconductor module in which chip parts are soldered to copper circuit lands provided on an electric insulating layer on a metal substrate, surrounded by a resin case, and a sealing material is injected and cured inside the resin case In this case, at a middle position between a pair of opposing lands, a high thermal conductivity electrical insulating member is pressed into a gap sandwiched between the electrical insulating layer below the copper circuit and the chip component from the surface of the chip component. A heat conduction path was formed directly on the metal substrate, and heat was released in addition to the conventional heat conduction path.
[0005]
With respect to claim 2, the high thermal conductivity electrical insulating member is formed of a rubbery organic compound having elasticity or a rubbery organic compound kneaded with an inorganic substance so as to be in close contact with the chip component and the component mounting substrate. It was set as the member made. Organic compounds that are solid electrical insulators have a higher thermal conductivity than air. Inorganic materials such as silicon carbide have high thermal conductivity, and knead them with silicon rubber to obtain an elastic, high thermal conductivity electrical insulating member that is sandwiched between the chip component and the component mounting substrate. And an effective heat transfer path is formed.
[0007]
DETAILED DESCRIPTION OF THE INVENTION
One embodiment of the present invention will be described with reference to FIG. 1 and FIG. A copper circuit 3 is formed on the metal substrate 1 via an electrical insulating layer 2, and lands 5 to which chip components 4 are soldered are provided in the copper circuit. When cream solder is printed and applied to the land, the part of the chip component is locally heated by irradiating the light beam to the part placed on the cream solder, the solder is melted, and the irradiation is stopped and cooled. When the solder 8 is hardened and then bonded to the necessary portion with the bonding wire 7, the circuit is connected and the circuit board 11 is completed. This circuit board is fixed by being surrounded by a resin case 21 so as to be the bottom, and a sealing material 22 such as epoxy resin is injected from above to be cured by heating. The power semiconductor module formed in this way increases the amount of internal heat generated as the power used increases. Therefore, in order to dissipate this heat effectively, the following steps are required before the chip component is fixed to the copper circuit. Do. Between the pair of lands 5 and lands 51 to which the chip component 4 is fixed, a rubber-like organic compound and a high thermal conductivity inorganic material such as silicon carbide or beryllia ceramics are kneaded into a sheet shape. The chip component is placed so as to sandwich the insulating member 9 (hereinafter referred to as the heat transfer member 9), the land solder solder is irradiated with a light beam and heated, and the soldering is completed. An elastic heat transfer member 9 is sandwiched in the gap 6 between the lower part of the fixed chip component 4 and the circuit board, and the temperature rise of the chip is lower than that in the case where the conventional heat transfer member 9 is not provided. This contributed to improving the life and reliability of semiconductor modules.
[0008]
In another embodiment, as shown in FIG. 3, the electrical insulating layer 2 fixed on the metal substrate 1 is beryllia ceramics, has a thermal conductivity of 0.58, and the thermal conductivity of alumina is 0. 8 times higher than 0.070. (The unit of thermal conductivity is kilocalories / square centimeters · seconds · ° C) Focusing on mounting chip components in contact with such electrical insulators, electrical insulation of beryllia ceramics on metal substrate 1 A copper circuit 3 is formed via the layer 2, and a component mounting table 10 having a height corresponding to the thickness of the copper circuit is formed on the electrical insulating layer 2. The chip component 4 is placed on the component mounting table and soldered to the land 5. Cream solder may be printed on the lands, and the entire substrate on which the chip component terminals are placed on the cream solder may be heated. Since the insulator is only inorganic and can withstand high temperatures, Irradiation does not require local heating. After that, when bonding is performed to a necessary portion with the bonding wire 7, the circuit is connected and the circuit board 11 is completed. The circuit board 11 is surrounded and fixed by a resin case 21 so as to be the bottom, and a sealing material 22 such as an epoxy resin is injected from above to be cured by heating.
In order to reduce the dimensional accuracy and reduce the cost in the embodiment shown in FIG. 3, since a gap is formed on the component mounting table 11 with which the chip component 4 is in direct contact, a capillary phenomenon such as silicon oil is formed in the gap. It is also effective to fill a heat-resistant liquid that is sucked up and held in
[0010]
【The invention's effect】
Conventionally, the thermal conductivity was improved for the part where air was thermally insulated in the gap between the chip component and the circuit board, so the module circuit board size with the same power capacity as before could be reduced. As a result, costs were reduced and resources were saved. Since the temperature of the chip components can be kept low, it contributes to the improvement of the lifetime and reliability of the entire semiconductor module.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an embodiment of the present invention.
FIG. 2 is an enlarged view of a main part showing an embodiment of the present invention.
FIG. 3 is a cross-sectional view showing another embodiment of the present invention.
FIG. 4 is a cross-sectional view showing the structure of a conventional circuit device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Metal substrate 2 Electrical insulation layer 3 Copper circuit 4 Chip component 5 Land 6 Gap 7 Bonding wire 8 Solder 9 High thermal conductivity electrical insulation member (heat transfer member)
DESCRIPTION OF SYMBOLS 10 Component mounting base 11 Circuit board 21 Resin case 22 Sealing material 51 Land

Claims (2)

金属基板上に電気絶縁層を介して設けられた銅回路のランドに,チップ部品をはんだ付けし,樹脂ケースで囲まれ,該樹脂ケースの内部に封止材が注入硬化される電力用半導体モジュールにおいて,対向する一対のランド間の中間位置で,銅回路の下層の電気絶縁層と,上記チップ部品とで挟まれる隙間に対して,高熱伝導性電気絶縁部材を圧入させたことを特徴とする電力用半導体モジュール。 A power semiconductor module in which chip parts are soldered to copper circuit lands provided on an electric insulating layer on a metal substrate, surrounded by a resin case, and a sealing material is injected and cured inside the resin case In the above, a high thermal conductive electrical insulation member is press-fitted into a gap sandwiched between the electrical insulation layer below the copper circuit and the chip component at an intermediate position between a pair of opposed lands. Power semiconductor module. 高熱伝導性電気絶縁部材が弾性を有するゴム状の有機化合物又は,無機物が混錬されたゴム状の有機化合物で形成された部材である請求項1記載の電力用半導体モジュール。 2. The power semiconductor module according to claim 1, wherein the high thermal conductivity electrically insulating member is a member formed of a rubbery organic compound having elasticity or a rubbery organic compound kneaded with an inorganic substance.
JP2001141057A 2001-05-11 2001-05-11 Power semiconductor module Expired - Fee Related JP4672902B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
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JP4672902B2 true JP4672902B2 (en) 2011-04-20

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* Cited by examiner, † Cited by third party
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JPS6161449A (en) * 1984-09-03 1986-03-29 Nec Corp Multichip ic package
JPH0831548B2 (en) * 1987-04-04 1996-03-27 株式会社日立製作所 Semiconductor device
JP2837331B2 (en) * 1993-03-18 1998-12-16 シャープ株式会社 Joining members
JPH10135405A (en) * 1996-11-01 1998-05-22 Aisin Aw Co Ltd Wiring board module
JPH1118429A (en) * 1997-06-24 1999-01-22 Hitachi Ltd Control module
JP3865957B2 (en) * 1998-12-18 2007-01-10 京セラ株式会社 Thermally conductive compounds
JP3690171B2 (en) * 1999-03-16 2005-08-31 株式会社日立製作所 Composite material and its production method and application
JP2000313905A (en) * 1999-04-28 2000-11-14 Hitachi Ltd Composite materials and various applications
JP3866880B2 (en) * 1999-06-28 2007-01-10 株式会社日立製作所 Resin-sealed electronic device
JP2001110962A (en) * 1999-10-13 2001-04-20 Denki Kagaku Kogyo Kk Heat radiation spacer

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