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JP4861200B2 - Power module - Google Patents

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JP4861200B2
JP4861200B2 JP2007005501A JP2007005501A JP4861200B2 JP 4861200 B2 JP4861200 B2 JP 4861200B2 JP 2007005501 A JP2007005501 A JP 2007005501A JP 2007005501 A JP2007005501 A JP 2007005501A JP 4861200 B2 JP4861200 B2 JP 4861200B2
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semiconductor element
insulator
power module
housing
solder
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JP2008172120A (en
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真大 沖田
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Sharp Corp
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    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
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    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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Description

この発明は、パワーモジュールに関し、パワー半導体素子などの発熱が大きい半導体素子の配線構造および放熱手段に関する。   The present invention relates to a power module, and relates to a wiring structure and heat dissipation means for a semiconductor element that generates a large amount of heat, such as a power semiconductor element.

従来、第１のパワーモジュールとしては、図３Ａ,図３Ｂに示すものがある。図３Ａは従来のパワーモジュールの断面図を示し、図３Ｂは半導体素子が実装された部分の上面図を示している。このパワーモジュールは、ＭＯＳ(メタル・オキサイド・セミコンダクタ)−ＦＥＴ(電界効果トランジスタ)やＩＧＢＴ(絶縁ゲートバイポーラトランジスタ),ＦＲＤ(高速整流素子)などであって、外部導出端子１１２がインサート成型された樹脂製の筐体１１３をパッケージとして用いている。   Conventionally, as the first power module, there are those shown in FIGS. 3A and 3B. 3A is a cross-sectional view of a conventional power module, and FIG. 3B is a top view of a portion where a semiconductor element is mounted. This power module is a MOS (Metal Oxide Semiconductor) -FET (Field Effect Transistor), IGBT (Insulated Gate Bipolar Transistor), FRD (Fast Rectifier), etc., and an external lead-out terminal 112 is an insert molded resin A case 113 made of a metal is used as a package.

また、上記筐体１１３の底部に配置されたＡlまたはＣu製の冷却板１０９上に、放熱性を向上するよう高熱伝導性セラミック等のフィラーを混合したエポキシ樹脂の絶縁層１０８を被覆し、さらに絶縁層１０８上にＣu等の導体部１０７にて回路を形成した構造の絶縁金属基板を用いている。   Further, an Al or Cu cooling plate 109 disposed at the bottom of the casing 113 is coated with an insulating layer 108 of an epoxy resin mixed with a filler such as a high thermal conductive ceramic so as to improve heat dissipation. An insulating metal substrate having a structure in which a circuit is formed by a conductor 107 such as Cu on the insulating layer 108 is used.

上記絶縁金属基板の導体部１０７上に半導体素子１０１を配置し、半導体素子１０１の裏面電極と導体部１０７を半田１０３により接合している。ここで、半導体素子１０１と絶縁金属基板の熱膨張差を補うため、半導体素子１０１と絶縁金属基板の中間程度の熱膨張率である図示しない導電体を半導体素子１０１と導体部７の間に積層する場合もある。   The semiconductor element 101 is disposed on the conductor portion 107 of the insulating metal substrate, and the back electrode of the semiconductor element 101 and the conductor portion 107 are joined by solder 103. Here, in order to compensate for the difference in thermal expansion between the semiconductor element 101 and the insulating metal substrate, a conductor (not shown) having a thermal expansion coefficient intermediate between the semiconductor element 101 and the insulating metal substrate is laminated between the semiconductor element 101 and the conductor portion 7. There is also a case.

次に、半導体素子１０１の実装が完了した絶縁金属基板を接着剤により筐体１１３と接着し、半導体素子１０１、導体部１０７、筐体１１３の外部導出端子１１２をＡlボンディングワイヤ１１０,１１１により接続することにより内部配線を行う。   Next, the insulating metal substrate on which the semiconductor element 101 has been mounted is bonded to the housing 113 with an adhesive, and the semiconductor element 101, the conductor 107, and the external lead-out terminal 112 of the housing 113 are connected by Al bonding wires 110 and 111. By doing so, internal wiring is performed.

上記筐体１１３内は、半導体素子１０１およびＡlボンディングワイヤ１１０を保護するためにゲル１１５で封止されている。   The inside of the casing 113 is sealed with a gel 115 to protect the semiconductor element 101 and the Al bonding wire 110.

また、ボンディングワイヤ１１０と半導体素子１０１の接合抵抗を減少するため、エミッタ(ソース)電極のボンディングワイヤを多数本に分けてボンディングをしたり、またボンディングワイヤの代わりにボンディングリボンやフレームリードによる半田接合が用いられたりしている場合もある。   Further, in order to reduce the bonding resistance between the bonding wire 110 and the semiconductor element 101, bonding is performed by dividing the bonding wire of the emitter (source) electrode into a plurality of pieces, or by soldering using a bonding ribbon or a frame lead instead of the bonding wire. May be used.

上記パワーモジュール構造の場合、半導体素子１０１動作時に発生する熱は、封止樹脂の熱伝導率が０．１〜２Ｗ／ｍ・Ｋ程度と小さいため、主として絶縁金属基板を経て放熱される。   In the case of the power module structure, heat generated during operation of the semiconductor element 101 is radiated mainly through the insulating metal substrate because the thermal conductivity of the sealing resin is as small as about 0.1 to 2 W / m · K.

しかし、半導体素子の微細化やパッケージの小型化により、上記従来のパワーモジュールの構造では、十分な放熱をすることが困難となっている。   However, due to miniaturization of semiconductor elements and miniaturization of packages, it is difficult to sufficiently dissipate heat in the conventional power module structure.

また、ボンディングリボンやフレームリードを用いた内部配線構造は、接合抵抗の低減および放熱性の向上に効果があるが、微小エリアの接合が困難であるため、大面積のエミッタ(ソース)電極に用いることが可能であっても、小面積のゲート電極は、ボンディングワイヤで接続する必要があり、プロセスの増加を招くことになる。   Also, the internal wiring structure using bonding ribbons and frame leads is effective for reducing junction resistance and improving heat dissipation, but it is difficult to join small areas, so it is used for large area emitter (source) electrodes. Even if it is possible, the gate electrode having a small area needs to be connected by a bonding wire, which increases the number of processes.

また、従来の第２のパワーモジュールとしては、半導体チップ上の電極パッドと導板をクリーム半田で固着することにより、放熱効率を向上させるものがある(例えば、特開２００１−３３２６６４号公報(特許文献１)参照)
しかしながら、この導板を放熱に用いたパワーモジュールでは、上記従来の第１のパワーモジュールと同様に、ゲート電極をボンディングワイヤで接続する必要があり、プロセスの増加を招く。
特開２００１−３３２６６４号公報 In addition, as a conventional second power module, there is one that improves heat dissipation efficiency by fixing an electrode pad and a conductive plate on a semiconductor chip with cream solder (for example, Japanese Patent Laid-Open No. 2001-332664 (patent). Reference 1))
However, in the power module using this conductive plate for heat dissipation, it is necessary to connect the gate electrode with a bonding wire as in the first conventional power module, resulting in an increase in processes.
JP 2001-332664 A

そこで、この発明の課題は、放熱性を向上しつつ、製造プロセスの増加を防ぐことができるパワーモジュールを提供することにある。   Accordingly, an object of the present invention is to provide a power module that can prevent an increase in the manufacturing process while improving heat dissipation.

上記課題を解決するため、この発明のパワーモジュールは、
筐体と、
上記筐体に固定され、その筐体と内部空間を形成し、内側の面に導体部が設けられた基材と、
上記基材の上記内側の面に実装された半導体素子と、
上記筐体内に配置され、絶縁体とこの絶縁体に固定された２本以上のリード端子とを有する内部配線構造体と
を備え、
上記半導体素子の上記基材に面する面と反対の側の面に設けられた電極と上記基材の上記導体部とを、上記内部配線構造体の上記リード端子を介して接続すると共に、
上記リード端子と上記半導体素子との間の半田厚を調整するため、上記絶縁体の上記リード端子が固定された側に、上記半導体素子に向かって突出して上記半導体素子に接する突出部を設けたことを特徴とする。 In order to solve the above problems, the power module of the present invention is
A housing,
A base material fixed to the housing, forming an internal space with the housing, and provided with a conductor on the inner surface;
A semiconductor element mounted on the inner surface of the substrate;
An internal wiring structure that is disposed in the housing and has an insulator and two or more lead terminals fixed to the insulator;
While connecting the electrode provided on the surface opposite to the surface facing the substrate of the semiconductor element and the conductor portion of the substrate through the lead terminal of the internal wiring structure ,
In order to adjust the solder thickness between the lead terminal and the semiconductor element, a protruding portion that protrudes toward the semiconductor element and contacts the semiconductor element is provided on the side of the insulator on which the lead terminal is fixed. It is characterized by that.

上記構成のパワーモジュールによれば、絶縁体に内部配線に必要な複数のリード端子が予め接合された内部配線構造体を用いて、半導体素子の基材に面する面と反対の側の面に設けられた電極と基材の導体部とをそのリード端子を介して接続することによって、放熱性を向上しつつ、製造プロセスの増加を防ぐことができる。   According to the power module having the above configuration, the internal wiring structure in which a plurality of lead terminals necessary for internal wiring are bonded in advance to the insulator is used, on the surface opposite to the surface facing the base material of the semiconductor element. By connecting the provided electrode and the conductor portion of the base material via the lead terminal, it is possible to prevent the increase in the manufacturing process while improving the heat dissipation.

例えば、上記絶縁体には、半導体素子の熱膨張率に近い熱膨張率でかつ熱伝度率の高い絶縁体材料を選ぶ。また、上記絶縁体とリード端子は、ろう付け,焼成等により半導体素子と基材を半田付けするときのリフローに影響を受けない手段でリフロー前に接合する。そして、上記リード端子は、半導体素子および基材上に接合させるときに半導体素子上の各電極と基板上の導体を配線できるよう適切な配置とする。そうして、リード端子の接合部分(半導体素子の電極側および基材の導体部側)には、半導体素子と基材の接合に使用する半田と同じ成分の半田をめっき、ディップ等により被覆する。それにより、半導体素子と基材を半田接合するときに内部配線構造体を積層しておき、同時にリフローすることによりプロセスの増加を防ぐことができる。
また、上記絶縁体のリード端子が固定された側に設けた突出部が、半導体素子に向かって突出して半導体素子に接することにより、リード端子と半導体素子との間の半田厚を調整するので、リフローしたときに突出部の下端が半導体素子の表面に接触する位置までしか半田が押しつぶされることがなく、ショートを防止できる。 For example, an insulator material having a thermal expansion coefficient close to that of a semiconductor element and a high thermal conductivity is selected as the insulator. Further, the insulator and the lead terminal are joined before reflow by means not affected by reflow when soldering the semiconductor element and the substrate by brazing, firing or the like. The lead terminals are appropriately arranged so that the electrodes on the semiconductor element and the conductors on the substrate can be wired when bonded to the semiconductor element and the substrate. Then, the same solder as the solder used for joining the semiconductor element and the base material is coated by plating, dipping, etc. on the joint portion of the lead terminal (the electrode side of the semiconductor element and the conductor portion side of the base material). . Thereby, when the semiconductor element and the base material are joined by soldering, the internal wiring structure is laminated and reflowed at the same time, thereby preventing an increase in processes.
In addition, the protrusion provided on the side where the lead terminal of the insulator is fixed protrudes toward the semiconductor element and contacts the semiconductor element, thereby adjusting the solder thickness between the lead terminal and the semiconductor element. When reflowing, the solder is crushed only to the position where the lower end of the protruding portion contacts the surface of the semiconductor element, and a short circuit can be prevented.

また、一実施形態のパワーモジュールでは、上記絶縁体に高熱伝導率の絶縁体材料を用いた。   Moreover, in the power module of one Embodiment, the insulator material with high thermal conductivity was used for the said insulator.

上記実施形態によれば、上記絶縁体に高熱伝導率の絶縁体材料を用いることによって、放熱効率をさらに向上できる。   According to the embodiment, the heat dissipation efficiency can be further improved by using an insulator material having high thermal conductivity for the insulator.

また、一実施形態のパワーモジュールでは、上記絶縁体に上記半導体素子の熱膨張率に近い熱膨張率の絶縁体材料を用いた。   In one embodiment of the power module, an insulator material having a thermal expansion coefficient close to that of the semiconductor element is used for the insulator.

上記実施形態によれば、上記絶縁体に半導体素子の熱膨張率に近い熱膨張率の絶縁体材料を用いることによって、リフロー等による熱の影響を防止できる。   According to the above embodiment, by using an insulator material having a thermal expansion coefficient close to that of the semiconductor element as the insulator, it is possible to prevent the influence of heat due to reflow or the like.

また、一実施形態のパワーモジュールでは、
上記筐体の開口部に配置され、外部に一部が露出した高熱伝導率の放熱部を有する蓋を備え、
上記蓋の上記放熱部と上記絶縁体が接する。 Moreover, in the power module of one embodiment,
The lid is disposed at the opening of the housing and has a heat radiating portion with a high thermal conductivity, a part of which is exposed to the outside,
The heat dissipation part of the lid and the insulator are in contact with each other.

上記実施形態によれば、蓋に高熱伝導率の材料で構成された放熱部を外部に一部が露出ように設けて、その放熱部が絶縁体と接触する構造とすることにより、さらに効率よく外部に放熱することができる。   According to the above-described embodiment, the heat radiation part made of a material having high thermal conductivity is provided on the lid so that a part of the heat radiation part is exposed to the outside, and the heat radiation part is in contact with the insulator, thereby further efficiently. It can dissipate heat to the outside.

以上より明らかなように、この発明のパワーモジュールによれば、放熱性を向上しつつ、製造プロセスの増加を防ぐことができるパワーモジュールを実現することができる。   As is clear from the above, according to the power module of the present invention, it is possible to realize a power module that can improve heat dissipation and prevent an increase in manufacturing process.

以下、この発明のパワーモジュールを図示の実施の形態により詳細に説明する。   The power module of the present invention will be described in detail below with reference to the illustrated embodiments.

〔第１実施形態〕
図１Ａはこの発明の第１実施形態のパワーモジュールの断面図を示し、図１Ｂは上記パワーモジュールの半導体素子実装部分の上面図を示している。また、図１Ｃは図１Ａに示すＡ部分のリフロー前の状態の拡大図を示し、図１Ｄは図１Ａに示すＡ部分のリフロー後の状態の拡大図を示している。 [First Embodiment]
FIG. 1A is a sectional view of a power module according to a first embodiment of the present invention, and FIG. 1B is a top view of a semiconductor element mounting portion of the power module. Moreover, FIG. 1C shows an enlarged view of the state before reflow of the A portion shown in FIG. 1A, and FIG. 1D shows an enlarged view of the state after the reflow of the A portion shown in FIG. 1A.

この第１実施形態のパワーモジュールは、図１Ａに示すように、樹脂製の筐体１３と、上記筐体１３に固定され、筐体１３と共に内側空間を形成し、内側の面に導体部７が設けられた絶縁金属基板２０と、上記絶縁金属基板２０の内側の面に実装された半導体素子１と、上記筐体１３内に配置され、絶縁体５とその絶縁体５に固定されたリード端子４とを有する内部配線構造体３０とを備えている。上記絶縁金属基板２０は、筐体１３の底部に配置されたＡlまたはＣu製の冷却板９上に、高熱伝導性セラミック等のフィラーを混合したエポキシ樹脂の絶縁層８を被覆し、さらにその絶縁層８上にＣu等の導体部７にて回路を形成したものである。   As shown in FIG. 1A, the power module according to the first embodiment is fixed to a resin casing 13 and the casing 13, forms an inner space together with the casing 13, and has a conductor portion 7 on the inner surface. , The semiconductor element 1 mounted on the inner surface of the insulating metal substrate 20, the insulator 5 and the leads fixed to the insulator 5 And an internal wiring structure 30 having terminals 4. The insulating metal substrate 20 covers an insulating layer 8 made of an epoxy resin mixed with a filler such as a high thermal conductive ceramic on a cooling plate 9 made of Al or Cu disposed at the bottom of the casing 13 and further insulates the insulating substrate 8. A circuit is formed on the layer 8 by a conductor portion 7 such as Cu.

上記半導体素子１は、絶縁金属基板２０の導体部７上に半田３で接合されている。半導体素子１上面のゲート電極パッドおよびエミッタ(ソース)電極パッドは、リード端子４と半田２で接合されている。リード端子４と絶縁体５は、予めろう付けや焼成等によりリフローの影響を受けない方法で接合されている。絶縁体５は、高熱伝導率で熱膨張率の小さいＡlＮ,ＳiＣ,Ａl2Ｏ3等を選択するとよい。エミッタ(ソース)電極に接続されるリード端子４とゲート電極に接続されるリード端子４は絶縁された状態となっている。ゲート電極パッドとエミッタ(ソース)電極パッドが半田にぬれやすいＡuやＮi等で被覆されている場合は半田２のみで接合可能であるが、Ａl等の半田に濡れにくい材質である場合は、Ａuスタッドバンプを各電極パッドにボンディングし、その電極パッドを介して半田２にて接合可能である。 The semiconductor element 1 is joined to the conductor portion 7 of the insulating metal substrate 20 with solder 3. The gate electrode pad and the emitter (source) electrode pad on the upper surface of the semiconductor element 1 are joined to the lead terminal 4 by the solder 2. The lead terminal 4 and the insulator 5 are joined in advance by a method that is not affected by reflow by brazing, firing, or the like. The insulator 5 may be selected from AlN, SiC, Al 2 O 3 or the like having a high thermal conductivity and a small thermal expansion coefficient. The lead terminal 4 connected to the emitter (source) electrode and the lead terminal 4 connected to the gate electrode are insulated. When the gate electrode pad and the emitter (source) electrode pad are covered with Au or Ni which is easily wetted by the solder, it can be joined only by the solder 2. A stud bump can be bonded to each electrode pad and can be bonded by solder 2 via the electrode pad.

上記リード端子４の半導体素子１と反対側の末端は、絶縁金属基板２０の導体部７に半田６で接合される。   The end of the lead terminal 4 opposite to the semiconductor element 1 is joined to the conductor portion 7 of the insulating metal substrate 20 with solder 6.

上記半導体素子１と絶縁金属基板２０との間の半田およびリード端子４と半導体素子１および絶縁金属基板２０との間の半田は、同一成分のものを選ぶことにより同時リフローを行うことが可能である。   The solder between the semiconductor element 1 and the insulating metal substrate 20 and the solder between the lead terminal 4 and the semiconductor element 1 and the insulating metal substrate 20 can be reflowed simultaneously by selecting the same components. is there.

ここで、半田材として半田ペーストを用いると、残渣による腐食や洗浄による損傷が信頼性上問題となるため、半導体素子１と絶縁金属基板２０の接合には、フラックスレスの半田プリフォーム材を使用し、内部配線構造体３０と半導体素子１および絶縁金属基板２０の半田２,６は、予めリード端子４にめっき、プリコートやディップ等によりフラックスのない状態で被覆しておくとよい。この場合、リフローはフラックスレスで行うため、還元雰囲気中で行う必要がある。また、フラックスによりタック(仮付け)させることができないため、治具により各材料を位置決め、保持する必要がある。リフローのとき、半導体素子１と内部配線構造体３０の接合を確実とするため、重りまたは治具により絶縁体５上から下方に圧力をかけておく。このとき、圧力はリード端子４の反発力より大きくする必要がある。この圧力により、溶融した半田に内圧がかかり、内部ボイドを外部に放出させる作用が働く。しかし、圧力が過剰であるとリード端子４に被覆した半田２が溶融したときに押しつぶされてショートすることが考えられる。   Here, when a solder paste is used as a solder material, corrosion due to residue or damage due to cleaning becomes a problem in reliability. Therefore, a fluxless solder preform material is used for joining the semiconductor element 1 and the insulating metal substrate 20. The internal wiring structure 30, the semiconductor element 1, and the solder 2 and 6 of the insulating metal substrate 20 are preferably coated on the lead terminal 4 in advance without flux by plating, precoating, dipping, or the like. In this case, since reflow is performed without flux, it is necessary to perform it in a reducing atmosphere. Further, since it cannot be tacked (temporarily attached) by flux, it is necessary to position and hold each material with a jig. During reflow, pressure is applied downward from above the insulator 5 with a weight or a jig to ensure the bonding between the semiconductor element 1 and the internal wiring structure 30. At this time, the pressure needs to be larger than the repulsive force of the lead terminal 4. By this pressure, an internal pressure is applied to the melted solder, and the action of releasing the internal void to the outside works. However, if the pressure is excessive, the solder 2 covering the lead terminals 4 may be crushed and short-circuited when melted.

これを防ぐため、図１Ｃの如く半田厚が適切となるよう絶縁体５に突出部Ｂを設けておく。この突出部Ｂにより半田をリフローしたとき、図１Ｄのように突出部Ｂの下端が半導体素子１の表面に接触する位置までしか押しつぶされることがなく、ショートを防止することができる。突出部Ｂの高さについて、放熱性は薄い方が良好となるがあまりに薄いと半田が溶融したときに流動性が悪くなり、内部にボイドが残留するため、半田厚が５０〜１００μｍとなるよう設計する。   In order to prevent this, a protrusion B is provided in the insulator 5 so that the solder thickness is appropriate as shown in FIG. 1C. When the solder is reflowed by the protruding portion B, as shown in FIG. 1D, the lower end of the protruding portion B is only crushed to a position where it contacts the surface of the semiconductor element 1, and a short circuit can be prevented. As for the height of the protrusion B, the heat dissipation is better when it is thin, but if it is too thin, the fluidity deteriorates when the solder melts, and voids remain inside, so that the solder thickness becomes 50 to 100 μm. design.

なお、図１Ｃ,図１Ｄでは、絶縁体５に突出部Ｂを１つ設けているが、突出部は複数設けてもよい。   In FIG. 1C and FIG. 1D, one protrusion B is provided on the insulator 5, but a plurality of protrusions may be provided.

そして、表面実装および内部配線を完了した絶縁金属基板２０は、筐体１３と接着材で固着され、絶縁金属基板２０の導体部７と外部導出端子１２はボンディングワイヤ１０により接合される。   Then, the insulated metal substrate 20 that has been subjected to the surface mounting and the internal wiring is fixed to the housing 13 with an adhesive, and the conductor portion 7 of the insulated metal substrate 20 and the external lead-out terminal 12 are joined by the bonding wire 10.

次に、筐体１３の内部をゲル１６で封止し、さらに筐体１３の開口部に樹脂製の蓋１４を固定することにより本パワーモジュールの組み立てが完了する。   Next, the inside of the housing 13 is sealed with the gel 16 and the resin lid 14 is fixed to the opening of the housing 13 to complete the assembly of the power module.

上記第１実施形態によれば、高熱伝導率の絶縁体５に予め必要な数のリード端子４を接合してある内部配線構造体３０を用いることにより、ボンディングワイヤよりも接合面積を増やすことが可能となり、放熱効率が向上しつつ、半導体素子１と絶縁金属基板２０および内部配線構造体３０のリフローを同時に行うことにより半田付けするので、プロセスを増加することなく対応可能となる。   According to the first embodiment, by using the internal wiring structure 30 in which the necessary number of lead terminals 4 are bonded in advance to the insulator 5 having high thermal conductivity, the bonding area can be increased more than the bonding wire. Thus, the heat dissipation efficiency is improved, and soldering is performed by performing reflow of the semiconductor element 1, the insulating metal substrate 20, and the internal wiring structure 30 at the same time.

また、上記絶縁体５に高熱伝導率の絶縁体材料を用いることによって、放熱効率をさらに向上できる。   Moreover, the heat dissipation efficiency can be further improved by using an insulator material having high thermal conductivity for the insulator 5.

また、上記絶縁体５に半導体素子１の熱膨張率に近い熱膨張率の絶縁体材料を用いることによって、リフロー等による熱の影響を防止することができる。   Further, by using an insulator material having a thermal expansion coefficient close to that of the semiconductor element 1 for the insulator 5, it is possible to prevent the influence of heat due to reflow or the like.

また、図１Ｃ, 図１Ｄに示すように、絶縁体５のリード端子４が固定された側に設けた突出部Ｂが、半導体素子１に向かって突出していることにより、リード端子４と半導体素子１との間の半田厚を調整するので、リフローしたときに突出部Ｂの下端が半導体素子１の表面に接触する位置までしか半田が押しつぶされることがなく、ショートを防止することができる。   Further, as shown in FIG. 1C and FIG. 1D, the projecting portion B provided on the side of the insulator 5 on which the lead terminal 4 is fixed projects toward the semiconductor element 1, whereby the lead terminal 4 and the semiconductor element Since the solder thickness with respect to 1 is adjusted, the solder is crushed only to the position where the lower end of the protruding portion B contacts the surface of the semiconductor element 1 when reflowing, and a short circuit can be prevented.

〔第２実施形態〕
図２はこの発明の第２実施形態のパワーモジュールの断面図を示している。 [Second Embodiment]
FIG. 2 shows a cross-sectional view of a power module according to a second embodiment of the present invention.

この第２実施形態のパワーモジュールは、第１実施形態のパワーモジュールと同様に、樹脂製の筐体１３と絶縁金属基板２０の接着、ワイヤボンディングまで行うが、ゲル封止するときに、内部配線構造体３０の絶縁体５上面が露出するように封止する。蓋１４の一部を高熱伝導率の材料からなる放熱部の一例としての放熱板１６とし、この部分が内部配線構造体３０に接する構造とすることにより、放熱効率をさらに高めることが可能である。   Similar to the power module of the first embodiment, the power module of the second embodiment performs bonding and wire bonding between the resin casing 13 and the insulating metal substrate 20, but the internal wiring is used when the gel is sealed. The structure 30 is sealed so that the upper surface of the insulator 5 is exposed. A part of the lid 14 is a heat radiating plate 16 as an example of a heat radiating portion made of a material having a high thermal conductivity, and the heat radiating efficiency can be further improved by adopting a structure in which this portion is in contact with the internal wiring structure 30. .

上記第２実施形態によれば、高熱伝導率の絶縁体５に予め必要な数のリード端子４を接合してある内部配線構造体３０を用いることにより、ボンディングワイヤよりも接合面積を増やすことが可能となり、放熱効率が向上しつつ、半導体素子１と絶縁金属基板２０および内部配線構造体３０のリフローを同時に行うことにより半田付けするので、プロセスを増加することなく対応可能となる。   According to the second embodiment, by using the internal wiring structure 30 in which a necessary number of lead terminals 4 are bonded to the insulator 5 having high thermal conductivity in advance, the bonding area can be increased more than the bonding wire. Thus, the heat dissipation efficiency is improved, and soldering is performed by performing reflow of the semiconductor element 1, the insulating metal substrate 20, and the internal wiring structure 30 at the same time.

また、上記絶縁体５に高熱伝導率の絶縁体材料を用いることによって、放熱効率をさらに向上できる。   Moreover, the heat dissipation efficiency can be further improved by using an insulator material having high thermal conductivity for the insulator 5.

また、上記絶縁体５に半導体素子１の熱膨張率に近い熱膨張率の絶縁体材料を用いることによって、リフロー等による熱の影響を防止することができる。   Further, by using an insulator material having a thermal expansion coefficient close to that of the semiconductor element 1 for the insulator 5, it is possible to prevent the influence of heat due to reflow or the like.

この発明の具体的な実施の形態について説明したが、この発明は上記第１,第２実施形態に限定されるものではなく、この発明の範囲内で種々変更して実施することができる。   Although specific embodiments of the present invention have been described, the present invention is not limited to the first and second embodiments described above, and various modifications can be made within the scope of the present invention.

図１Ａはこの発明の第１実施形態のパワーモジュールの断面図である。FIG. 1A is a sectional view of a power module according to the first embodiment of the present invention. 図１Ｂは上記パワーモジュールの半導体素子実装部分の上面図である。FIG. 1B is a top view of a semiconductor element mounting portion of the power module. 図１Ｃは図１Ａに示すＡ部分のリフロー前の状態の拡大図である。FIG. 1C is an enlarged view of a portion A shown in FIG. 1A before reflowing. 図１Ｄは図１Ａに示すＡ部分のリフロー後の状態の拡大図である。FIG. 1D is an enlarged view of a state after reflow of portion A shown in FIG. 1A. 図２はこの発明の第２実施形態のパワーモジュールの断面図である。FIG. 2 is a sectional view of a power module according to a second embodiment of the present invention. 図３Ａは従来の第１のパワーモジュールの断面図である。FIG. 3A is a cross-sectional view of a conventional first power module. 図３Ｂは上記パワーモジュールの半導体素子実装部分の上面図である。FIG. 3B is a top view of a semiconductor element mounting portion of the power module.

１…半導体素子
２,３,６…半田
４…リード端子
５…絶縁体
７…導体部
８…絶縁層
９…冷却板
１０,１１…ボンディングワイヤ
１２…外部導出端子
１３…筐体
１４…蓋
１５…ゲル
１６…放熱板
２０…絶縁金属基板
３０…内部配線構造体 DESCRIPTION OF SYMBOLS 1 ... Semiconductor element 2, 3, 6 ... Solder 4 ... Lead terminal 5 ... Insulator 7 ... Conductor part 8 ... Insulating layer 9 ... Cooling plate 10,11 ... Bonding wire 12 ... External lead-out terminal 13 ... Housing 14 ... Cover 15 ... Gel 16 ... Heat sink 20 ... Insulating metal substrate 30 ... Internal wiring structure

Claims (4)

筐体と、
上記筐体に固定され、その筐体と内部空間を形成し、内側の面に導体部が設けられた基材と、
上記基材の上記内側の面に実装された半導体素子と、
上記筐体内に配置され、絶縁体とこの絶縁体に固定された２本以上のリード端子とを有する内部配線構造体と
を備え、
上記半導体素子の上記基材に面する面と反対の側の面に設けられた電極と上記基材の上記導体部とを、上記内部配線構造体の上記リード端子を介して接続すると共に、
上記リード端子と上記半導体素子との間の半田厚を調整するため、上記絶縁体の上記リード端子が固定された側に、上記半導体素子に向かって突出して上記半導体素子に接する突出部を設けたことを特徴とするパワーモジュール。 A housing,
A base material fixed to the housing, forming an internal space with the housing, and provided with a conductor on the inner surface;
A semiconductor element mounted on the inner surface of the substrate;
An internal wiring structure that is disposed in the housing and has an insulator and two or more lead terminals fixed to the insulator;
While connecting the electrode provided on the surface opposite to the surface facing the substrate of the semiconductor element and the conductor portion of the substrate through the lead terminal of the internal wiring structure ,
In order to adjust the solder thickness between the lead terminal and the semiconductor element, a protruding portion that protrudes toward the semiconductor element and contacts the semiconductor element is provided on the side of the insulator on which the lead terminal is fixed. A power module characterized by that. 請求項１に記載のパワーモジュールにおいて、
上記絶縁体に高熱伝導率の絶縁体材料を用いたことを特徴とするパワーモジュール。 The power module according to claim 1,
A power module using an insulator material having high thermal conductivity for the insulator. 請求項１に記載のパワーモジュールにおいて、
上記絶縁体に上記半導体素子の熱膨張率に近い熱膨張率の絶縁体材料を用いたことを特徴とするパワーモジュール。 The power module according to claim 1,
A power module characterized in that an insulator material having a thermal expansion coefficient close to that of the semiconductor element is used for the insulator. 請求項１乃至３のいずれか１つに記載のパワーモジュールにおいて、
上記筐体の開口部に配置され、外部に一部が露出した高熱伝導率の放熱部を有する蓋を備え、
上記蓋の上記放熱部と上記絶縁体が接することを特徴とするパワーモジュール。 In the power module according to any one of claims 1 to 3 ,
The lid is disposed at the opening of the housing and has a heat radiating portion with a high thermal conductivity, a part of which is exposed to the outside,
The power module, wherein the heat dissipation part of the lid and the insulator are in contact with each other.
JP2007005501A 2007-01-15 2007-01-15 Power module Expired - Fee Related JP4861200B2 (en)

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