JP4045299B2 - 酸窒化物蛍光体及び発光デバイス - Google Patents
酸窒化物蛍光体及び発光デバイス Download PDFInfo
- Publication number
- JP4045299B2 JP4045299B2 JP2006515442A JP2006515442A JP4045299B2 JP 4045299 B2 JP4045299 B2 JP 4045299B2 JP 2006515442 A JP2006515442 A JP 2006515442A JP 2006515442 A JP2006515442 A JP 2006515442A JP 4045299 B2 JP4045299 B2 JP 4045299B2
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- emitting diode
- excitation
- light emitting
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 99
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 230000005284 excitation Effects 0.000 description 60
- 238000000695 excitation spectrum Methods 0.000 description 38
- 238000002474 experimental method Methods 0.000 description 35
- 238000010586 diagram Methods 0.000 description 31
- 239000011575 calcium Substances 0.000 description 30
- 238000000295 emission spectrum Methods 0.000 description 24
- 239000000203 mixture Substances 0.000 description 24
- 229920005989 resin Polymers 0.000 description 17
- 239000011347 resin Substances 0.000 description 17
- 229910052791 calcium Inorganic materials 0.000 description 14
- 230000007423 decrease Effects 0.000 description 14
- 229910052727 yttrium Inorganic materials 0.000 description 14
- 229910052693 Europium Inorganic materials 0.000 description 13
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 10
- 238000010304 firing Methods 0.000 description 10
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 9
- 238000002284 excitation--emission spectrum Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 101150072724 cye-1 gene Proteins 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 229910052747 lanthanoid Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- -1 Lanthanide metals Chemical class 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910003564 SiAlON Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 101710156645 Peptide deformylase 2 Proteins 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000003081 coactivator Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910001940 europium oxide Inorganic materials 0.000 description 1
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 229940043267 rhodamine b Drugs 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/597—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon oxynitride, e.g. SIALONS
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/6261—Milling
- C04B35/6262—Milling of calcined, sintered clinker or ceramics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/64—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3865—Aluminium nitrides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
- C04B2235/3878—Alpha silicon nitrides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/442—Carbonates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/766—Trigonal symmetry, e.g. alpha-Si3N4 or alpha-Sialon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
- C04B2235/81—Materials characterised by the absence of phases other than the main phase, i.e. single phase materials
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9646—Optical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Description
請求項1に記載の本発明は、一般式(Ca1-zYz)x(Si,Al)12(O,N)16:Eu2+ yで表され、主相がアルファサイアロン結晶構造を有し、0.75≦x≦1.00、0.03≦y≦0.08、0<z<0.15であることを要旨とする。
図2は、本発明の第1の実験(実験1)に係る砲弾型発光ダイオードランプ(発光デバイス)1の斜視図であり、図3は、この砲弾型発光ダイオードランプ1の断面図である。
青色発光ダイオード素子5は、上部電極6、炭化珪素(SiC)基板7、窒化インジウムガリウム(InGaN)発光層8、及び下部電極13から構成される。また、リードワイヤ2の上端部には、凹部4が設けられており、青色発光ダイオード素子5の下部電極13は、導電性ペースト9により凹部4の底面と電気的に接続され、上部電極6は、ボンディングワイヤ10によりリードワイヤ3と電気的に接続されている。
第1の樹脂12は、エポキシ樹脂等の透光性を有する樹脂であり、また、蛍光体11が分散されている。この第1の樹脂12は、凹部4内に充填され、青色発光ダイオード素子5を封止している。
上記の蛍光体11は、青色発光ダイオード素子5から発せられた青色光の一部を吸収し、これとは異なる波長の光(黄色光)を発する。なお、この蛍光体11の詳細については後述する。
第2の樹脂14は、エポキシ樹脂等の透光性を有する樹脂であり、リードワイヤ2及び3の上部、ボンディングワイヤ10、第1の樹脂12を封止している。
以上の構成を有する砲弾型発光ダイオードランプ1は、青色発光ダイオード素子5から発せられた青色光と蛍光体11から発せられた黄色光の混色により白色光を発する。
上記の課題を解決するために、発明者は、母相がカルシウムとイットリウムとを共添加したアルファサイアロンであり、ユーロピウムにより賦活されたアルファサイアロン蛍光体を合成し、その光学特性を評価した。
ランタニド金属とはLa,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb,Luの15元素である。
これは、アルファサイアロン蛍光体を合成可能な組成範囲を示唆したものであり、その個々の蛍光体の光学特性についてはすべてが開示されているわけではない。
まず、一般式(Ca1−zYz)x(Si,Al)12(O,N)16:Eu2+ yでCa及びYの含有量を示すxの値と、Eu含有量を示すyの値とを決める。これは、0.75≦x≦1.0かつ0.03≦y≦0.08であることが好ましい。
出発原料として、以下の化学試薬、窒化硅素(Si3N4)、窒化アルミニウム(AlN)、炭酸カルシウム(CaCO3)、酸化ユーロピウム(Eu2O3)、酸化イットリウム(Y2O3)を用いた。
上記の実験1においては、砲弾型発光ダイオードランプ1が蛍光体11として、CYE2の組成を有し、且つ1800℃で焼成された蛍光体を備える場合を示したが、本実験においては、砲弾型発光ダイオードランプ1が蛍光体11として上記のCYE4の組成を有し、且つ1800℃で焼成されたものを備える場合を示す。
上記の実験1及び2においては、砲弾型発光ダイオードランプ1が蛍光体11として、CYE2もしくはCYE4の組成を有し、且つ1800℃で焼成された蛍光体を備える場合を示したが、本実験においては、砲弾型発光ダイオードランプ1が蛍光体11として上記のCYE1の組成を有し、且つ1800℃で焼成されたものを備える場合を示す。
図20は、本発明の第4の実験に係るチップ型発光ダイオードランプ(発光デバイス)15の斜視図であり、図21は、このチップ型発光ダイオードランプ15の断面図である。
上記の実験における砲弾型発光ダイオードランプ1及びチップ型発光ダイオードランプ15は、先の蛍光体以外にCYE3の組成を有し、且つ1800℃で焼成された蛍光体を有する構成とすることもできる。
上記の実験における砲弾型発光ダイオードランプ1及びチップ型発光ダイオードランプ15は、先の蛍光体以外にCYE5の組成を有し、且つ1800℃で焼成された蛍光体を有する構成とすることもできる。
上記の実験における砲弾型発光ダイオードランプ1及びチップ型発光ダイオードランプ15は、先の蛍光体以外にCYE6の組成を有し、且つ1800℃で焼成された蛍光体を有する構成とすることもできる。
上記の実験における砲弾型発光ダイオードランプ1及びチップ型発光ダイオードランプ15は、先の蛍光体以外にCYE7の組成を有し、且つ1800℃で焼成された蛍光体を有する構成とすることもできる。
上記の実験における砲弾型発光ダイオードランプ1及びチップ型発光ダイオードランプ15は、先の蛍光体以外にCYE8の組成を有し、且つ1800℃で焼成された蛍光体を有する構成とすることもできる。
Claims (8)
- 一般式(Ca1-zYz)x(Si,Al)12(O,N)16:Eu2+ yで表され、
主相がアルファサイアロン結晶構造を有し、
0.75≦x≦1.00、0.03≦y≦0.08、0<z<0.15である
ことを特徴とする酸窒化物蛍光体。 - 請求項1に記載の酸窒化物蛍光体と、
半導体青色発光ダイオード素子と
を備えることを特徴とする発光デバイス。 - 前記半導体青色発光ダイオード素子の発光中心波長が430nm乃至463nmであることを特徴とする請求項2に記載の発光デバイス。
- 前記半導体青色発光ダイオード素子の発光中心波長が440nm乃至456nmであることを特徴とする請求項2に記載の発光デバイス。
- 一般式(Ca1-zYz)x(Si,Al)12(O,N)16:Eu2+ yで表され、
主相がアルファサイアロン結晶構造を有し、
0.75≦x≦1.00、0.03≦y≦0.08、0.15≦z≦0.35である
ことを特徴とする酸窒化物蛍光体。 - 請求項5に記載の酸窒化物蛍光体と、
半導体青色発光ダイオード素子と
を備えることを特徴とする発光デバイス。 - 前記半導体青色発光ダイオード素子の発光中心波長が434nm乃至464nmであることを特徴とする請求項6に記載の発光デバイス。
- 前記半導体青色発光ダイオード素子の発光中心波長が440nm乃至458nmであることを特徴とする請求項7に記載の発光デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004250468 | 2004-08-30 | ||
JP2004250468 | 2004-08-30 | ||
PCT/JP2005/015473 WO2006025261A1 (ja) | 2004-08-30 | 2005-08-25 | 酸窒化物蛍光体及び発光デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP4045299B2 true JP4045299B2 (ja) | 2008-02-13 |
JPWO2006025261A1 JPWO2006025261A1 (ja) | 2008-05-08 |
Family
ID=35999918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006515442A Active JP4045299B2 (ja) | 2004-08-30 | 2005-08-25 | 酸窒化物蛍光体及び発光デバイス |
Country Status (7)
Country | Link |
---|---|
US (1) | US7597821B2 (ja) |
EP (1) | EP1785465B1 (ja) |
JP (1) | JP4045299B2 (ja) |
KR (1) | KR100772047B1 (ja) |
CN (1) | CN100513517C (ja) |
TW (1) | TW200617144A (ja) |
WO (1) | WO2006025261A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070159818A1 (en) * | 2006-01-07 | 2007-07-12 | Rueggeberg Frederick A | Use of integrating sphere technology to provide uniform, high-intensity light, and wavelength mixing from light emitting diodes |
US7938643B2 (en) * | 2006-01-07 | 2011-05-10 | Medical College Of Georgia Research Institute, Inc. | Use of integrating sphere technology to provide uniform, high-intensity light, and wavelength mixing from light emitting diodes |
KR101258229B1 (ko) * | 2006-06-30 | 2013-04-25 | 서울반도체 주식회사 | 발광 소자 |
JP5367218B2 (ja) * | 2006-11-24 | 2013-12-11 | シャープ株式会社 | 蛍光体の製造方法および発光装置の製造方法 |
JP5229770B2 (ja) | 2007-03-22 | 2013-07-03 | 株式会社フジクラ | サイアロン蛍光体 |
WO2008132954A1 (ja) * | 2007-04-18 | 2008-11-06 | Mitsubishi Chemical Corporation | 蛍光体及びその製造方法、蛍光体含有組成物、発光装置、照明装置、画像表示装置、並びに窒素含有化合物 |
US8436526B2 (en) | 2008-02-11 | 2013-05-07 | Sensor Electronic Technology, Inc. | Multiwavelength solid-state lamps with an enhanced number of rendered colors |
US7990045B2 (en) * | 2008-03-15 | 2011-08-02 | Sensor Electronic Technology, Inc. | Solid-state lamps with partial conversion in phosphors for rendering an enhanced number of colors |
JP2011014766A (ja) * | 2009-07-03 | 2011-01-20 | Koito Mfg Co Ltd | 発光モジュールおよび車両用灯具 |
JP5544161B2 (ja) * | 2009-12-28 | 2014-07-09 | 三菱化学株式会社 | 蛍光体 |
CN104087291B (zh) | 2010-03-31 | 2017-04-12 | 宇部兴产株式会社 | 赛隆系氧氮化物荧光体的制造方法以及赛隆系氧氮化物荧光体 |
KR101772656B1 (ko) | 2011-05-19 | 2017-08-29 | 삼성전자주식회사 | 형광체 및 발광장치 |
KR101886714B1 (ko) * | 2011-12-13 | 2018-08-08 | 엘지이노텍 주식회사 | 산질화물 형광체 및 그를 포함한 발광소자 패키지 |
CN105247011B (zh) * | 2013-05-28 | 2017-02-22 | 宇部兴产株式会社 | 氮氧化物荧光体粉末 |
KR102164079B1 (ko) * | 2014-05-30 | 2020-10-12 | 엘지이노텍 주식회사 | 산질화물계 형광체를 포함하는 발광 소자 패키지 |
CN109020558B (zh) * | 2018-09-07 | 2021-11-12 | 安徽理工大学 | 一种大功率暖白光固态照明用SiAlON荧光透明陶瓷及其制备方法 |
JPWO2023145656A1 (ja) * | 2022-01-26 | 2023-08-03 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6632379B2 (en) * | 2001-06-07 | 2003-10-14 | National Institute For Materials Science | Oxynitride phosphor activated by a rare earth element, and sialon type phosphor |
JP3668770B2 (ja) | 2001-06-07 | 2005-07-06 | 独立行政法人物質・材料研究機構 | 希土類元素を付活させた酸窒化物蛍光体 |
DE10133352A1 (de) * | 2001-07-16 | 2003-02-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
DE10147040A1 (de) * | 2001-09-25 | 2003-04-24 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
JP4207489B2 (ja) | 2002-08-06 | 2009-01-14 | 株式会社豊田中央研究所 | α−サイアロン蛍光体 |
JP4072632B2 (ja) | 2002-11-29 | 2008-04-09 | 豊田合成株式会社 | 発光装置及び発光方法 |
US7074346B2 (en) * | 2003-02-06 | 2006-07-11 | Ube Industries, Ltd. | Sialon-based oxynitride phosphor, process for its production, and use thereof |
JP4066828B2 (ja) | 2003-02-06 | 2008-03-26 | 宇部興産株式会社 | サイアロン系酸窒化物蛍光体およびその製造方法 |
JP2004250468A (ja) | 2003-02-18 | 2004-09-09 | Matsushita Electric Ind Co Ltd | 発泡スチロール減容装置 |
JP3914991B2 (ja) * | 2003-11-27 | 2007-05-16 | 独立行政法人物質・材料研究機構 | サイアロン蛍光体の製造方法 |
WO2005090514A1 (ja) * | 2004-03-22 | 2005-09-29 | Fujikura Ltd. | 酸窒化物蛍光体及び発光デバイス |
KR100841676B1 (ko) * | 2004-07-13 | 2008-06-26 | 가부시키가이샤후지쿠라 | 형광체 및 그 형광체를 이용한 전구색광을 발하는 전구색광발광 다이오드 램프 |
-
2005
- 2005-08-25 WO PCT/JP2005/015473 patent/WO2006025261A1/ja active Application Filing
- 2005-08-25 CN CNB2005800013250A patent/CN100513517C/zh active Active
- 2005-08-25 EP EP05774683A patent/EP1785465B1/en active Active
- 2005-08-25 JP JP2006515442A patent/JP4045299B2/ja active Active
- 2005-08-25 KR KR1020067008823A patent/KR100772047B1/ko not_active IP Right Cessation
- 2005-08-29 US US11/212,559 patent/US7597821B2/en active Active
- 2005-08-30 TW TW094129781A patent/TW200617144A/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2006025261A1 (ja) | 2006-03-09 |
US20070246732A1 (en) | 2007-10-25 |
EP1785465A4 (en) | 2010-03-24 |
JPWO2006025261A1 (ja) | 2008-05-08 |
US7597821B2 (en) | 2009-10-06 |
KR100772047B1 (ko) | 2007-10-31 |
TWI315738B (ja) | 2009-10-11 |
TW200617144A (en) | 2006-06-01 |
EP1785465A1 (en) | 2007-05-16 |
CN1898358A (zh) | 2007-01-17 |
KR20060086388A (ko) | 2006-07-31 |
EP1785465B1 (en) | 2013-03-27 |
CN100513517C (zh) | 2009-07-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5145534B2 (ja) | 蛍光体とその製造方法および照明器具 | |
JP5105347B2 (ja) | 蛍光体とその製造方法および発光器具 | |
JP4674348B2 (ja) | 蛍光体とその製造方法および発光器具 | |
JP5110518B2 (ja) | 蛍光体とその製造方法および照明器具 | |
JP3906224B2 (ja) | 発光物質およびこの物質を使用する発光ダイオード | |
JP4104013B2 (ja) | 発光デバイス及び照明装置 | |
JP3931239B2 (ja) | 発光素子及び照明器具 | |
JP4045299B2 (ja) | 酸窒化物蛍光体及び発光デバイス | |
CN1906269B (zh) | 荧光体及使用该荧光体的发出电灯色光的电灯色光发光二极管灯 | |
CN100549129C (zh) | 发光器件及照明装置 | |
CN100549128C (zh) | 氧氮化物荧光体及发光器件 | |
JP2005286312A (ja) | 発光デバイス及び照明装置 | |
JP5229770B2 (ja) | サイアロン蛍光体 | |
JP4234161B2 (ja) | 発光素子及び照明器具 | |
US11898080B2 (en) | Phosphor, method for producing same and light emitting element | |
JP4070219B2 (ja) | 発光素子を用いた照明装置 | |
JP2006054372A (ja) | 発光ダイオードランプ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070717 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20071106 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071119 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4045299 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101122 Year of fee payment: 3 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20070420 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111122 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121122 Year of fee payment: 5 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121122 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131122 Year of fee payment: 6 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060925 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |