JP5367218B2 - 蛍光体の製造方法および発光装置の製造方法 - Google Patents
蛍光体の製造方法および発光装置の製造方法 Download PDFInfo
- Publication number
- JP5367218B2 JP5367218B2 JP2006317524A JP2006317524A JP5367218B2 JP 5367218 B2 JP5367218 B2 JP 5367218B2 JP 2006317524 A JP2006317524 A JP 2006317524A JP 2006317524 A JP2006317524 A JP 2006317524A JP 5367218 B2 JP5367218 B2 JP 5367218B2
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- light
- sub
- light emitting
- general formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/0821—Oxynitrides of metals, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/0821—Oxynitrides of metals, boron or silicon
- C01B21/0826—Silicon aluminium oxynitrides, i.e. sialons
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/597—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon oxynitride, e.g. SIALONS
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/6261—Milling
- C04B35/6262—Milling of calcined, sintered clinker or ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/628—Coating the powders or the macroscopic reinforcing agents
- C04B35/62802—Powder coating materials
- C04B35/62805—Oxide ceramics
- C04B35/62807—Silica or silicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
- H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3865—Aluminium nitrides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/442—Carbonates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5454—Particle size related information expressed by the size of the particles or aggregates thereof nanometer sized, i.e. below 100 nm
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/766—Trigonal symmetry, e.g. alpha-Si3N4 or alpha-Sialon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/767—Hexagonal symmetry, e.g. beta-Si3N4, beta-Sialon, alpha-SiC or hexa-ferrites
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Luminescent Compositions (AREA)
- Ceramic Products (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
一般式(A):EuaSibAlcOdNe
(一般式(A)中、0.005≦a≦0.4、b+c=12、d+e=16を満足する数である)で実質的に表されるβ型SIALONであって、発光のピ−ク波長から可視光の長波長領域での反射率が95%以上であることを特徴とする2価のユ−ロピウム付活酸窒化物蛍光体である。
一般式(B):MIfEugSihAlkOmNn
(一般式(B)中、MIはLi、Na、K、Cs、Mg、Ca、Sr及びBaから選ばれる少なくとも1種の元素を示し、0<f≦3.0、0.005≦g≦0.4、h+k=12、m+n=16を満足する数である)で実質的に表されるα型SIALONであって、発光のピ−ク波長から可視光の長波長領域での反射率が95%以上であることを特徴とする2価のユ−ロピウム付活酸窒化物蛍光体である。ここにおいて、MIはLiおよびCaから選ばれる少なくとも1種の元素であることが、好ましい。
一般式(C):(MII1-pEup)MIIISiN3
(一般式(C)中、MIIはアルカリ土類金属元素であり、Mg、Ca、SrおよびBaから選ばれる少なくとも1種の元素を示し、MIIIは3価の金属元素からなり、Al、Ga、In、Sc、Y、La、GdおよびLuから選ばれる少なくとも1種の元素を示し、0.001≦p≦0.05を満足する数である)で実質的に表され、発光のピ−ク波長から可視光の長波長領域での反射率が95%以上であることを特徴とする2価のユーロピウム付活窒化物蛍光体である。ここにおいて、MIIIはAl、GaおよびInから選ばれる少なくとも1種の元素であることが、好ましい。
一般式(A):EuaSibAlcOdNe
(一般式(A)中、0.005≦a≦0.4、b+c=12、d+e=16を満足する数である)で実質的に表されるβ型SIALONであって、発光のピ−ク波長から可視光の長波長領域での反射率が95%以上である2価のユーロピウム付活酸窒化物蛍光体であり、前記黄色系発光蛍光体は、
一般式(B):MIfEugSihAlkOmNn
(一般式(B)中、MIはLi、Na、K、Cs、Mg、Ca、SrおよびBaから選ばれる少なくとも1種の元素を示し、0<f≦3.0、0.005≦g≦0.4、h+k=12、m+n=16を満足する数である)で実質的に表されるα型SIALONであって、発光のピ−ク波長から可視光の長波長領域での反射率が95%以上である2価のユーロピウム付活酸窒化物蛍光体であり、前記赤色系発光蛍光体は、
一般式(C):(MII1-pEup)MIIISiN3
(一般式(C)中、MIIはアルカリ土類金属元素であり、Mg、Ca、SrおよびBaから選ばれる少なくとも1種の元素を示し、MIIIは3価の金属元素からなり、Al、Ga、In、Sc、Y、La、GdおよびLuから選ばれる少なくとも1種の元素を示し、0.001≦p≦0.05を満足する数である)で実質的に表され、発光のピ−ク波長から可視光の長波長領域での反射率が95%以上である2価のユーロピウム付活窒化物蛍光体である、発光装置についても提供する。
本発明の第1の蛍光体は、下記一般式(A)で実質的に表されるβ型SIALON(サイアロン)である2価のユーロピウム付活酸窒化物蛍光体である。
上記一般式中、aの値は、0.005≦a≦0.4であり、0.01≦a≦0.2であるのが好ましい。aの値が0.005未満であると、十分な明るさが得られないという不具合があり、またaの値が0.4を超えると、濃度消光などにより、明るさが大きく低下するという不具合がある。また、上記一般式中、b+c=12であり、d+e=16である。
本発明の第2の蛍光体は、下記一般式(B)で実質的に表されるα型SIALONである2価のユーロピウム付活酸窒化物蛍光体である。
上記一般式(B)中、MIは、Li、Na、K、Cs、Mg、Ca、SrおよびBaから選ばれる少なくとも1種の元素を示す。中でも、LiおよびCaから選ばれる少なくとも1種を用いることにより、これを用いた発光装置においてより明るく発光するものを得ることができることから、MIがLiおよびCaから選ばれる少なくとも1種であることが好ましい。
このようなα型SIALONである2価のユーロピウム付活酸窒化物蛍光体としては、具体的には、Ca0.6Eu0.05Si10.52Al1.48O0.88N15.12、Ca0.2Eu0.01Si10.10Al1.90O0.80N15.20、Ca1.0Eu0.06Si10.72Al1.28O1.38N14.62、Ca0.3Eu0.10Si10.20Al1.80O0.40N15.60、Ca0.4Mg0.1Eu0.03Si10.00Al2.00O1.10N14.90、Ca0.75Eu0.01Si9.75Al2.25O0.76N15.24、Ca0.50Li0.10Eu0.01Si11.50Al0.50O0.20N15.80、Ca1.00Sr0.10Eu0.20Si10.00Al2.00O0.30N15.70などを挙げることができるが、勿論これらに限定されるものではない。
本発明の第3の蛍光体は、下記一般式(C)で実質的に表される2価のユーロピウム付活窒化物蛍光体である。
上記一般式(C)中、MIIはアルカリ土類金属であり、Mg、Ca、SrおよびBaから選ばれる少なくとも1種の元素を示す。
窒化珪素(Si3N4)粉末191.64g、平均粒子径24nmの二酸化珪素(SiO2)を2.0重量%被覆した窒化アルミニウム(AlN)粉末6.75g、酸化ユーロピウム(Eu2O3)粉末1.62gを秤量し、全体を窒素にて置換したグロ−ブボックス内にてV型混合器に入れ、20分間混合した。得られた混合物を窒化ホウ素製の坩堝に入れ10気圧の窒素雰囲気中で、2000℃、8時間焼成した。得られた焼成物をボールミルなどにより粉砕する。この粉砕した粉末を窒化ホウ素製の坩堝に入れ、5気圧の窒素雰囲気中で、1700℃、10時間焼成した。得られた焼成物をボールミルなどにより粉砕した。粉砕後、1Lのビ−カ中に純水1Lを入れ、更に焼成物を投入し、撹拌を行った。所定時間撹拌後、撹拌を止め静置することによって、粉砕時生じた微粒子成分を除去した。この洗浄操作を繰り返し行うことによって、大部分の微粒子成分を除去した。その後、濾過、乾燥(110℃、16時間)する。得られた蛍光体はEu0.03Si11.63Al0.37O0.03N15.97で表されるβ型SIALONであった。
実施例1と同様の方法によって、二酸化珪素(SiO2)を被覆していない窒化アルミニウム(AlN)粉末を用い、更には、混合時にn−CnH2n+2で表される高級炭化水素溶剤を添加し、混合したものを原材料混合物として用いた。得られた蛍光体はEu0.03Si11.63 Al 0.37O0.03N15.97で表されるβ型SIALONであった。
窒化珪素(Si3N4)粉末118.60g、平均粒子径100nmの二酸化珪素(SiO2)を10.0重量%被覆した窒化アルミニウム(AlN)粉末16.46g、酸化ユーロピウム(Eu2O3)粉末2.12g、炭酸カルシウム(CaCO3)粉末14.47gを秤量し、全体を窒素にて置換したグローブボックス内にてV型混合器に入れ、20分間混合した。得られた混合物を窒化ホウ素製の坩堝に入れ10気圧の窒素雰囲気中で、1700℃、12時間焼成した。得られた焼成物をボ−ルミルなどにより粉砕した。粉砕後、1Lのビ−カ中に純水1Lを入れ、更に焼成物を投入し、撹拌を行った。所定時間撹拌後、撹拌を止め静置することによって、粉砕時生じた微粒子成分を除去した。この洗浄操作を繰り返し行うことによって、大部分の微粒子成分を除去した。その後、濾過、乾燥(110℃、16時間)した。得られた蛍光体はCa0.6Eu0.05Si10.52Al1.48O0.88N15.12で表されるα型SIALONであった。
二酸化珪素(SiO2)を被覆していない窒化アルミニウム(AlN)粉末を用い、さらには、混合時ボールミルを用い、混合したものを原材料混合物として用いた以外は実施例2と同様にして、Ca0.6Eu0.05Si10.50Al1.50O0.70N15.30で表されるα型SIALONを得た。
窒化カルシウム(Ca3N2)粉末56.54g、平均粒子径45nmの二酸化珪素(SiO2)を0.1重量%被覆した窒化アルミニウム(AlN)粉末47.38g、窒化珪素(Si3N4)粉末54.05g、酸化ユーロピウム(Eu2O3)粉末2.03gを秤量し、全体を窒素にて置換したグローブボックス内にてV型混合器に入れ、20分間混合した。得られた混合物を窒化ホウ素製の坩堝に入れ、窒素雰囲気中で、1500℃、5時間焼成した。得られた焼成物をボ−ルミル等により粉砕した。粉砕後、1Lのビ−カ中に純水1Lを入れ、更に焼成物を投入し、撹拌を行った。所定時間撹拌後、撹拌を止め静置することによって、粉砕時生じた微粒子成分を除去した。この洗浄操作を繰り返し行うことによって、大部分の微粒子成分を除去した。その後、濾過、乾燥(110℃、16時間)した。得られた蛍光体はCa0.990Eu0.010SiAlN3で表される窒化物蛍光体であった。
二酸化珪素(SiO2)を被覆していない窒化アルミニウム(AlN)粉末を用い、さらには、混合時ボ−ルミルを用い、混合したものを原材料混合物として用いた以外は実施例3と同様にして蛍光体を作製した。
実施例1〜3、比較例1〜3で得られた蛍光体を用い、大塚電子製MCPD7000にてピ−ク波長より長波長領域での吸収率を測定し、それから反射率を算出した。実施例1、比較例1の蛍光体は、ピーク波長が540nm付近にあり、540nm付近より長波長領域での反射率は、実施例1の蛍光体では97.3%であったのに対し、比較例1の蛍光体では85.2%であった。また実施例2、比較例2の蛍光体は、ピーク波長は585nm付近にあり、585nm付近より長波長領域での反射率は、実施例2の蛍光体では97.0%であったのに対し、比較例2の蛍光体では84.1%であった。また、実施例3、比較例3の蛍光体は、ピーク波長は645nm付近にあり、645nm付近より長波長領域での反射率は、実施例3の蛍光体では97.6%であったのに対し、比較例3の蛍光体では86.0%であった。実施例1〜3および比較例1〜3について測定された反射率を表1に示す。
<実施例4〜14、比較例4〜14>
表2に示すような各種蛍光体について、実施例1〜3とそれぞれ同様な方法で作製し、評価試験を行った。なお、表2には、窒化アルミニウム(AlN)粉末を被覆する二酸化珪素(SiO2)の大きさと被覆量(重量%)を併せて示している。
<実施例15>
発光素子として、440nmにピ−ク波長を有する窒化ガリウム(GaN)系半導体を用いた。波長変換部には、黄色系発光蛍光体としてピ−ク波長が585nm付近にあり、585nm付近より長波長領域での反射率が97.0%であるCa0.6Eu0.05Si10.52Al1.48O0.88N15.12(α型SIALON)(実施例2)なる組成のものを用いた。この蛍光体を所定のシリコ−ン樹脂中に分散して波長変換部を形成し、発光装置を作製した。
585nm付近より長波長領域での反射率が84.1%であるCa0.6Eu0.05Si10.50 Al 1.50O0.70N15.30(α型SIALON)(比較例2)で表される黄色系発光蛍光体を波長変換部に用いたこと以外は実施例15と同様にして、発光装置を作製した。
実施例15、比較例15で作製した発光装置について、順電流20mAを通電し、その特性(光度)を評価した。その結果を表3に示す。
表4に示すような発光素子と蛍光体の組み合わせで、実施例15と同様の方法で発光装置を作製し、評価試験を行った。
Claims (5)
- 一般式(A):EuaSibAlcOdNe
(一般式(A)中、0.005≦a≦0.4、b+c=12、d+e=16を満足する数である)
で実質的に表されるβ型SIALONであって、発光のピーク波長から可視光の長波長領域での反射率が95%以上であることを特徴とする2価のユーロピウム付活酸窒化物蛍光体を製造する方法であって、
機械的に粉砕する装置を用いることなく、不活性雰囲気中にて、蛍光体の原材料に、窒化アルミニウムに対し0.01〜15重量%の二酸化珪素であって、平均粒子径が10〜200nmの微粒子の二酸化珪素で被覆された窒化アルミニウムを混合することを特徴とする蛍光体の製造方法。 - 一次光を発する発光素子と、前記一次光の一部を吸収して、一次光の波長よりも長い波長を有する二次光を発する波長変換部とを備えた発光装置であって、前記波長変換部は緑色系発光蛍光体を含み、かつ、黄色系発光蛍光体および赤色系発光蛍光体から選ばれる少なくともいずれかを含み、
前記緑色系発光蛍光体は、
一般式(A):EuaSibAlcOdNe
(一般式(A)中、0.005≦a≦0.4、b+c=12、d+e=16を満足する数である)
で実質的に表されるβ型SIALONであって、発光のピ−ク波長から可視光の長波長領域での反射率が95%以上である2価のユーロピウム付活酸窒化物蛍光体であり、
前記黄色系発光蛍光体は、
一般式(B):MIfEugSihAlkOmNn
(一般式(B)中、MIはLi、Na、K、Cs、Mg、Ca、SrおよびBaから選ばれる少なくとも1種の元素を示し、0<f≦3.0、0.005≦g≦0.4、h+k=12、m+n=16を満足する数である)
で実質的に表されるα型SIALONであって、発光のピ−ク波長から可視光の長波長領域での反射率が95%以上である2価のユーロピウム付活酸窒化物蛍光体であり、
前記赤色系発光蛍光体は、
一般式(C):(MII1-pEup)MIIISiN3
(一般式(C)中、MIIはアルカリ土類金属元素であり、Mg、Ca、SrおよびBaから選ばれる少なくとも1種の元素を示し、MIIIは3価の金属元素からなり、Al、Ga、In、Sc、Y、La、GdおよびLuから選ばれる少なくとも1種の元素を示し、0.001≦p≦0.05を満足する数である)
で実質的に表され、発光のピ−ク波長から可視光の長波長領域での反射率が95%以上である2価のユーロピウム付活窒化物蛍光体である、発光装置を製造する方法であって、
機械的に粉砕する装置を用いることなく、不活性雰囲気中にて、蛍光体の原材料に、窒化アルミニウムに対し0.01〜15重量%の二酸化珪素であって、平均粒子径が10〜200nmの微粒子の二酸化珪素で被覆された窒化アルミニウムを混合することによって蛍光体を製造することを特徴とする、発光装置の製造方法。 - 前記黄色系発光蛍光体として、上記一般式(B)中、MIがLiおよびCaから選ばれる少なくとも1種の元素である、2価のユーロピウム付活酸窒化物蛍光体を用いたことを特徴とする、請求項2に記載の発光装置の製造方法。
- 前記赤色系発光蛍光体として、上記一般式(C)中、MIIIがAl、GaおよびInから選ばれる少なくとも1種の元素である、2価のユーロピウム付活窒化物蛍光体を用いたことを特徴とする、請求項2に記載の発光装置の製造方法。
- 前記発光素子が窒化ガリウム系半導体素子であり、当該発光素子からの一次光が波長430〜480nmの範囲内にあることを特徴とする請求項2に記載の発光装置の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006317524A JP5367218B2 (ja) | 2006-11-24 | 2006-11-24 | 蛍光体の製造方法および発光装置の製造方法 |
US11/944,052 US8663498B2 (en) | 2006-11-24 | 2007-11-21 | Phosphor, method of producing the same, and light emitting apparatus |
CN2010102688982A CN101935526B (zh) | 2006-11-24 | 2007-11-23 | 荧光体、其制备方法和发光装置 |
CN2007101936767A CN101186820B (zh) | 2006-11-24 | 2007-11-23 | 荧光体、其制备方法和发光装置 |
US14/166,231 US9624427B2 (en) | 2006-11-24 | 2014-01-28 | Phosphor, method of producing the same, and light emitting apparatus |
US15/371,747 US9884990B2 (en) | 2006-11-24 | 2016-12-07 | Phosphor, method of producing the same, and light emitting apparatus |
US15/788,302 US10259997B2 (en) | 2006-11-24 | 2017-10-19 | Phosphor, method of producing the same, and light emitting apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006317524A JP5367218B2 (ja) | 2006-11-24 | 2006-11-24 | 蛍光体の製造方法および発光装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008127547A JP2008127547A (ja) | 2008-06-05 |
JP5367218B2 true JP5367218B2 (ja) | 2013-12-11 |
Family
ID=39479441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006317524A Active JP5367218B2 (ja) | 2006-11-24 | 2006-11-24 | 蛍光体の製造方法および発光装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (4) | US8663498B2 (ja) |
JP (1) | JP5367218B2 (ja) |
CN (2) | CN101186820B (ja) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007049114A (ja) * | 2005-05-30 | 2007-02-22 | Sharp Corp | 発光装置とその製造方法 |
US20070052342A1 (en) * | 2005-09-01 | 2007-03-08 | Sharp Kabushiki Kaisha | Light-emitting device |
JP5367218B2 (ja) | 2006-11-24 | 2013-12-11 | シャープ株式会社 | 蛍光体の製造方法および発光装置の製造方法 |
ATE491010T1 (de) * | 2007-04-20 | 2010-12-15 | Koninkl Philips Electronics Nv | Weisslichtquelle und leuchtstoff mit erhöhter farbstabilität |
JP2009019163A (ja) * | 2007-07-13 | 2009-01-29 | Sharp Corp | 発光装置用蛍光体粒子集合体、発光装置、および液晶表示用バックライト装置 |
US8058088B2 (en) | 2008-01-15 | 2011-11-15 | Cree, Inc. | Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating |
JP5832713B2 (ja) * | 2008-04-14 | 2015-12-16 | 日亜化学工業株式会社 | 蛍光体及びこれを用いた発光装置並びに蛍光体の製造方法 |
CN102216421B (zh) * | 2008-08-12 | 2014-12-17 | 三星电子株式会社 | 制备β-SiAlON磷光体的方法 |
US8158026B2 (en) | 2008-08-12 | 2012-04-17 | Samsung Led Co., Ltd. | Method for preparing B-Sialon phosphor |
JP2010177620A (ja) * | 2009-02-02 | 2010-08-12 | Showa Denko Kk | 発光装置の製造方法 |
JP5833918B2 (ja) * | 2009-02-26 | 2015-12-16 | 日亜化学工業株式会社 | 蛍光体及びその製造方法並びにこれを用いた発光装置 |
US8928005B2 (en) | 2009-07-02 | 2015-01-06 | Sharp Kabushiki Kaisha | Light-emitting device |
JP5558787B2 (ja) * | 2009-11-13 | 2014-07-23 | 電気化学工業株式会社 | β型サイアロンの製造方法 |
WO2011083671A1 (ja) * | 2010-01-08 | 2011-07-14 | シャープ株式会社 | 蛍光体、発光装置およびそれを用いた液晶表示装置 |
JP5190475B2 (ja) * | 2010-02-19 | 2013-04-24 | 株式会社東芝 | 蛍光体およびそれを用いた発光装置 |
JP4740379B1 (ja) * | 2010-02-25 | 2011-08-03 | 電気化学工業株式会社 | β型サイアロン蛍光体、その用途及びβ型サイアロン蛍光体の製造方法 |
WO2011105157A1 (ja) * | 2010-02-26 | 2011-09-01 | シャープ株式会社 | 発光装置 |
US20110220920A1 (en) * | 2010-03-09 | 2011-09-15 | Brian Thomas Collins | Methods of forming warm white light emitting devices having high color rendering index values and related light emitting devices |
US8643038B2 (en) * | 2010-03-09 | 2014-02-04 | Cree, Inc. | Warm white LEDs having high color rendering index values and related luminophoric mediums |
WO2012014701A1 (ja) | 2010-07-26 | 2012-02-02 | シャープ株式会社 | 発光装置 |
CN102376860A (zh) | 2010-08-05 | 2012-03-14 | 夏普株式会社 | 发光装置及其制造方法 |
JP2012057071A (ja) * | 2010-09-09 | 2012-03-22 | Denki Kagaku Kogyo Kk | β型サイアロンの製造方法 |
JP5758903B2 (ja) | 2010-09-16 | 2015-08-05 | 電気化学工業株式会社 | β型サイアロン及びその製造方法並びに発光装置 |
US20120153184A1 (en) * | 2010-12-21 | 2012-06-21 | Honeywell International Inc. | Luminescent phosphor-containing materials, and methods for their production and use in authenticating articles |
EP2666841B1 (en) * | 2011-01-18 | 2016-09-21 | Sharp Kabushiki Kaisha | Semiconductor light-emitting device |
DE102011016567B4 (de) * | 2011-04-08 | 2023-05-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines optoelektronischen Bauelements und derart hergestelltes Bauelement |
US8513900B2 (en) * | 2011-05-12 | 2013-08-20 | Ledengin, Inc. | Apparatus for tuning of emitter with multiple LEDs to a single color bin |
CN102796522A (zh) * | 2011-05-27 | 2012-11-28 | 亿广科技(上海)有限公司 | 荧光粉组合物及使用该荧光粉组合物的白色发光装置 |
US8906263B2 (en) | 2011-06-03 | 2014-12-09 | Cree, Inc. | Red nitride phosphors |
US8814621B2 (en) | 2011-06-03 | 2014-08-26 | Cree, Inc. | Methods of determining and making red nitride compositions |
US8729790B2 (en) | 2011-06-03 | 2014-05-20 | Cree, Inc. | Coated phosphors and light emitting devices including the same |
US8747697B2 (en) | 2011-06-07 | 2014-06-10 | Cree, Inc. | Gallium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same |
EP2637224B1 (en) * | 2012-03-09 | 2019-04-03 | Panasonic Intellectual Property Management Co., Ltd. | Light emitting device, illumination apparatus and system using same |
JP6341097B2 (ja) | 2013-02-07 | 2018-06-13 | 三菱ケミカル株式会社 | 窒化物蛍光体とその製造方法 |
US8941295B2 (en) * | 2013-04-29 | 2015-01-27 | Kai-Shon Tsai | Fluorescent material and illumination device |
CN104212448A (zh) * | 2013-05-30 | 2014-12-17 | 晶元光电股份有限公司 | 萤光材料及其制备方法 |
WO2016094863A1 (en) * | 2014-12-11 | 2016-06-16 | Nitto Denko Corporation | Nitride phosphor element for light emitting diodes |
CN104485327B (zh) * | 2014-12-11 | 2017-08-01 | 杭州杭科光电股份有限公司 | 一种led光源和led发光模组的制备方法 |
US9530943B2 (en) | 2015-02-27 | 2016-12-27 | Ledengin, Inc. | LED emitter packages with high CRI |
JP6354626B2 (ja) * | 2015-03-09 | 2018-07-11 | 豊田合成株式会社 | 発光装置の製造方法 |
JP6472728B2 (ja) | 2015-08-04 | 2019-02-20 | 日亜化学工業株式会社 | 発光装置および発光装置を備えたバックライト |
DE102017201882A1 (de) | 2016-02-09 | 2017-08-24 | Nichia Corporation | Leuchtvorrichtung und die Leuchtvorrichtung aufweisende Hintergrundbeleuchtung |
US10219345B2 (en) | 2016-11-10 | 2019-02-26 | Ledengin, Inc. | Tunable LED emitter with continuous spectrum |
JP7428465B2 (ja) * | 2017-07-20 | 2024-02-06 | デンカ株式会社 | 赤色蛍光体及び発光装置 |
KR102230459B1 (ko) * | 2017-09-06 | 2021-03-23 | 지엘비텍 주식회사 | D50, d65 고연색성 표준 led 발광 모듈 및 조명 장치 |
JP6912728B2 (ja) * | 2018-03-06 | 2021-08-04 | 日亜化学工業株式会社 | 発光装置及び光源装置 |
JP7038573B2 (ja) * | 2018-03-06 | 2022-03-18 | 愛三工業株式会社 | エンジンシステム |
WO2019188630A1 (ja) * | 2018-03-29 | 2019-10-03 | デンカ株式会社 | α型サイアロン蛍光体及び発光装置 |
NL2023498B1 (en) * | 2019-07-12 | 2021-02-04 | Physee Group B V | Optical structures comprising luminescent materials for plant growth optimization |
US11293602B2 (en) * | 2020-02-28 | 2022-04-05 | Glbtech Co., Ltd. | High color rendering D50/D65 standard LED illuminant module and lighting apparatus |
TWI772234B (zh) * | 2021-12-02 | 2022-07-21 | 財團法人工業技術研究院 | 透明氮化物 |
EP4293733A4 (en) | 2022-01-20 | 2024-04-17 | Mitsubishi Chemical Corporation | PHOSPHOR, ELECTROLUMINESCENT DEVICE, LIGHTING DEVICE, IMAGE DISPLAY DEVICE AND DISPLAY LAMP FOR MOBILE STATION |
KR102599818B1 (ko) | 2022-01-20 | 2023-11-08 | 미쯔비시 케미컬 주식회사 | 형광체, 발광 장치, 조명 장치, 화상 표시 장치 및 차량용 표시등 |
Family Cites Families (142)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3707641A (en) | 1970-12-22 | 1972-12-26 | Westinghouse Electric Corp | Discharge device which utilizes a mixture of two fluorescent materials |
NL160869C (nl) | 1972-11-03 | Philips Nv | Luminescerend scherm, alsmede ontladingslamp en katho- de straalbuis, voorzien van een dergelijk scherm. | |
US4390637A (en) | 1980-09-10 | 1983-06-28 | Nippon Electric Glass Company, Limited | X-Ray absorbing glass for a color cathode ray tube having a controlled chromaticity value and a selective light absorption |
JPH0316988A (ja) | 1989-06-14 | 1991-01-24 | Hitachi Cable Ltd | 化合物半導体単結晶製造装置 |
JP2790673B2 (ja) | 1989-09-20 | 1998-08-27 | 化成オプトニクス株式会社 | アルミン酸塩蛍光体 |
EP0686997A3 (en) | 1994-06-06 | 1996-06-26 | Matsushita Electric Ind Co Ltd | Discharge lamp and lighting device for general lighting |
TW353678B (en) | 1994-08-17 | 1999-03-01 | Mitsubishi Chem Corp | Aluminate phosphor |
KR100662955B1 (ko) | 1996-06-26 | 2006-12-28 | 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
JP2927279B2 (ja) | 1996-07-29 | 1999-07-28 | 日亜化学工業株式会社 | 発光ダイオード |
US6608332B2 (en) | 1996-07-29 | 2003-08-19 | Nichia Kagaku Kogyo Kabushiki Kaisha | Light emitting device and display |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
JP3106988B2 (ja) | 1997-02-07 | 2000-11-06 | 三菱マテリアル株式会社 | 薄膜形成用溶液及び薄膜形成方法 |
JPH10228868A (ja) | 1997-02-13 | 1998-08-25 | Ind Technol Res Inst | プラズマディスプレイの発光効率を改善する方法 |
JP3095366B2 (ja) | 1997-04-07 | 2000-10-03 | 北川精機株式会社 | プレス制御方法及びプレス装置 |
JP3966954B2 (ja) | 1997-09-01 | 2007-08-29 | 東芝電子エンジニアリング株式会社 | 照明装置、読み取り装置、投影装置、浄化装置、および表示装置 |
US6340824B1 (en) | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
JPH11140437A (ja) | 1997-11-06 | 1999-05-25 | Matsushita Electric Ind Co Ltd | 二価ユーロピウム付活蛍光体の製造方法 |
JP2907286B1 (ja) | 1998-06-26 | 1999-06-21 | サンケン電気株式会社 | 蛍光カバーを有する樹脂封止型半導体発光装置 |
JP3645422B2 (ja) | 1998-07-14 | 2005-05-11 | 東芝電子エンジニアリング株式会社 | 発光装置 |
JP3486345B2 (ja) | 1998-07-14 | 2004-01-13 | 東芝電子エンジニアリング株式会社 | 半導体発光装置 |
JP2000109826A (ja) | 1998-10-05 | 2000-04-18 | Kasei Optonix Co Ltd | アルカリ土類アルミン酸塩蛍光体及び蛍光ランプ |
US6429583B1 (en) | 1998-11-30 | 2002-08-06 | General Electric Company | Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors |
JP3081842B1 (ja) * | 1999-07-13 | 2000-08-28 | ファインセラミックス技術研究組合 | αサイアロン粒子 |
US6686691B1 (en) | 1999-09-27 | 2004-02-03 | Lumileds Lighting, U.S., Llc | Tri-color, white light LED lamps |
TWI272299B (en) | 1999-10-06 | 2007-02-01 | Sumitomo Chemical Co | A process for producing aluminate-based phosphor |
JP2001127346A (ja) | 1999-10-22 | 2001-05-11 | Stanley Electric Co Ltd | 発光ダイオード |
JP2001172623A (ja) | 1999-12-20 | 2001-06-26 | Toshiba Corp | 蛍光体およびそれを用いた蛍光ランプ |
TWI285217B (en) | 2000-04-06 | 2007-08-11 | Sumitomo Chemical Co | Vacuum ultraviolet ray-excited light-emitting phosphor |
JP3515737B2 (ja) | 2000-06-22 | 2004-04-05 | 松下電器産業株式会社 | 蛍光体およびそれを用いた蛍光ランプ |
JP2002003836A (ja) | 2000-06-22 | 2002-01-09 | Matsushita Electric Ind Co Ltd | 蛍光体およびそれを用いた蛍光ランプ |
CN100567447C (zh) | 2000-06-27 | 2009-12-09 | 住友化学工业株式会社 | 铝酸盐荧光物质的制法、荧光物质和含荧光物质的装置 |
DE10036940A1 (de) | 2000-07-28 | 2002-02-07 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Lumineszenz-Konversions-LED |
JP4077170B2 (ja) | 2000-09-21 | 2008-04-16 | シャープ株式会社 | 半導体発光装置 |
JP3609709B2 (ja) | 2000-09-29 | 2005-01-12 | 株式会社シチズン電子 | 発光ダイオード |
US20020084745A1 (en) | 2000-12-29 | 2002-07-04 | Airma Optoelectronics Corporation | Light emitting diode with light conversion by dielectric phosphor powder |
MY131962A (en) | 2001-01-24 | 2007-09-28 | Nichia Corp | Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same |
JP3447274B2 (ja) | 2001-02-22 | 2003-09-16 | 化成オプトニクス株式会社 | アルミン酸塩蛍光体の製造方法 |
JP2002275462A (ja) | 2001-03-21 | 2002-09-25 | Nemoto & Co Ltd | ランプ用蛍光体およびその製造方法 |
JP4101468B2 (ja) | 2001-04-09 | 2008-06-18 | 豊田合成株式会社 | 発光装置の製造方法 |
US7091656B2 (en) | 2001-04-20 | 2006-08-15 | Nichia Corporation | Light emitting device |
JP3668770B2 (ja) * | 2001-06-07 | 2005-07-06 | 独立行政法人物質・材料研究機構 | 希土類元素を付活させた酸窒化物蛍光体 |
US6632379B2 (en) | 2001-06-07 | 2003-10-14 | National Institute For Materials Science | Oxynitride phosphor activated by a rare earth element, and sialon type phosphor |
DE10133352A1 (de) | 2001-07-16 | 2003-02-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
JP2003121838A (ja) | 2001-08-06 | 2003-04-23 | Toray Ind Inc | 液晶表示装置 |
JP4032682B2 (ja) | 2001-08-28 | 2008-01-16 | 三菱化学株式会社 | 蛍光体 |
US7189340B2 (en) | 2004-02-12 | 2007-03-13 | Mitsubishi Chemical Corporation | Phosphor, light emitting device using phosphor, and display and lighting system using light emitting device |
US7294956B2 (en) | 2001-10-01 | 2007-11-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element and light emitting device using this |
JP3985486B2 (ja) | 2001-10-01 | 2007-10-03 | 松下電器産業株式会社 | 半導体発光素子とこれを用いた発光装置 |
JP3946541B2 (ja) | 2002-02-25 | 2007-07-18 | 三菱電線工業株式会社 | 発光装置およびそれを用いた照明装置、ならびに該発光装置の製造方法と設計方法 |
KR100961342B1 (ko) | 2002-03-22 | 2010-06-04 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 형광체와 그 제조 방법 및 발광 장치 |
JP2003321675A (ja) | 2002-04-26 | 2003-11-14 | Nichia Chem Ind Ltd | 窒化物蛍光体及びその製造方法 |
JP4214768B2 (ja) | 2002-11-29 | 2009-01-28 | 日亜化学工業株式会社 | 窒化物蛍光体及びそれを用いた発光装置 |
EP1490453B1 (en) | 2002-03-25 | 2012-08-15 | Philips Intellectual Property & Standards GmbH | Tri-color white light led lamp |
CA2427559A1 (en) | 2002-05-15 | 2003-11-15 | Sumitomo Electric Industries, Ltd. | White color light emitting device |
JP3707446B2 (ja) | 2002-05-28 | 2005-10-19 | 住友電気工業株式会社 | 白色発光素子 |
DE60325851D1 (de) | 2002-06-13 | 2009-03-05 | Cree Inc | Halbleiter-strahlungsquelle mit gesättigtem phosphor |
JP3655267B2 (ja) | 2002-07-17 | 2005-06-02 | 株式会社東芝 | 半導体発光装置 |
JP4197109B2 (ja) | 2002-08-06 | 2008-12-17 | 静雄 藤田 | 照明装置 |
JP4222059B2 (ja) | 2002-09-24 | 2009-02-12 | 日亜化学工業株式会社 | 発光装置 |
US6717353B1 (en) | 2002-10-14 | 2004-04-06 | Lumileds Lighting U.S., Llc | Phosphor converted light emitting device |
JP2004210921A (ja) | 2002-12-27 | 2004-07-29 | Nichia Chem Ind Ltd | オキシ窒化物蛍光体及びその製造方法並びにそれを用いた発光装置 |
JP3775377B2 (ja) | 2002-11-06 | 2006-05-17 | 日亜化学工業株式会社 | マンガン付活アルミン酸塩蛍光体とその製造方法及び真空紫外線励起発光装置 |
JP4207537B2 (ja) | 2002-11-08 | 2009-01-14 | 日亜化学工業株式会社 | 蛍光体および発光装置 |
JP5138145B2 (ja) | 2002-11-12 | 2013-02-06 | 日亜化学工業株式会社 | 蛍光体積層構造及びそれを用いる光源 |
JP4072632B2 (ja) | 2002-11-29 | 2008-04-09 | 豊田合成株式会社 | 発光装置及び発光方法 |
JP4124684B2 (ja) | 2003-03-25 | 2008-07-23 | セイコーインスツル株式会社 | 半透過型液晶表示装置 |
JP4274843B2 (ja) | 2003-04-21 | 2009-06-10 | シャープ株式会社 | Ledデバイスおよびそれを用いた携帯電話機器、デジタルカメラおよびlcd表示装置 |
KR100609830B1 (ko) | 2003-04-25 | 2006-08-09 | 럭스피아 주식회사 | 녹색 및 적색형광체를 이용하는 백색 반도체 발광장치 |
DE10324832A1 (de) | 2003-06-02 | 2004-12-23 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Entladungslampe mit Leuchtstoff |
JP2005003436A (ja) | 2003-06-10 | 2005-01-06 | Konica Minolta Medical & Graphic Inc | 輝尽性蛍光体の製造方法と、それを用いた放射線画像変換パネル及びその製造方法 |
US7026755B2 (en) * | 2003-08-07 | 2006-04-11 | General Electric Company | Deep red phosphor for general illumination applications |
US7544316B2 (en) | 2003-08-27 | 2009-06-09 | Graftech International Holdings Inc. | Process for making graphite articles |
US7285913B2 (en) | 2003-08-29 | 2007-10-23 | Matsushita Electric Industrial Co., Ltd. | Plasma display device having blue phosphor layers with alkaline earth metal aluminate containing molybdenum or tungsten |
JP2005091480A (ja) | 2003-09-12 | 2005-04-07 | Nitto Denko Corp | 異方性フィルムの製造方法 |
US7723740B2 (en) | 2003-09-18 | 2010-05-25 | Nichia Corporation | Light emitting device |
JP4366161B2 (ja) | 2003-09-19 | 2009-11-18 | スタンレー電気株式会社 | 半導体発光装置 |
JP2005109085A (ja) | 2003-09-30 | 2005-04-21 | Okaya Electric Ind Co Ltd | 発光ダイオード |
US7488432B2 (en) | 2003-10-28 | 2009-02-10 | Nichia Corporation | Fluorescent material and light-emitting device |
US7094362B2 (en) | 2003-10-29 | 2006-08-22 | General Electric Company | Garnet phosphor materials having enhanced spectral characteristics |
JP3837588B2 (ja) | 2003-11-26 | 2006-10-25 | 独立行政法人物質・材料研究機構 | 蛍光体と蛍光体を用いた発光器具 |
KR100540848B1 (ko) | 2004-01-02 | 2006-01-11 | 주식회사 메디아나전자 | 이중 몰드로 구성된 백색 발광다이오드 소자 및 그 제조방법 |
WO2005071039A1 (ja) | 2004-01-26 | 2005-08-04 | Kyocera Corporation | 波長変換器、発光装置、波長変換器の製造方法および発光装置の製造方法 |
US7250715B2 (en) * | 2004-02-23 | 2007-07-31 | Philips Lumileds Lighting Company, Llc | Wavelength converted semiconductor light emitting devices |
TWI262609B (en) | 2004-02-27 | 2006-09-21 | Dowa Mining Co | Phosphor and manufacturing method thereof, and light source, LED using said phosphor |
JP4511849B2 (ja) | 2004-02-27 | 2010-07-28 | Dowaエレクトロニクス株式会社 | 蛍光体およびその製造方法、光源、並びにled |
JP2005244075A (ja) | 2004-02-27 | 2005-09-08 | Matsushita Electric Works Ltd | 発光装置 |
JP3921545B2 (ja) | 2004-03-12 | 2007-05-30 | 独立行政法人物質・材料研究機構 | 蛍光体とその製造方法 |
JP2005298805A (ja) | 2004-03-16 | 2005-10-27 | Mitsubishi Chemicals Corp | 発光装置及び照明装置 |
KR100806243B1 (ko) * | 2004-03-22 | 2008-02-22 | 가부시키가이샤후지쿠라 | 산질화물 형광체 및 발광 디바이스 |
JP2005272486A (ja) * | 2004-03-22 | 2005-10-06 | Fujikura Ltd | 粉末蛍光体、アルファサイアロン蛍光体製造方法及び発光デバイス |
TWI286393B (en) | 2004-03-24 | 2007-09-01 | Toshiba Lighting & Technology | Lighting apparatus |
JP4451178B2 (ja) | 2004-03-25 | 2010-04-14 | スタンレー電気株式会社 | 発光デバイス |
KR100847957B1 (ko) | 2004-04-27 | 2008-07-22 | 마쯔시다덴기산교 가부시키가이샤 | 형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을이용한 발광 장치 |
JP4128564B2 (ja) | 2004-04-27 | 2008-07-30 | 松下電器産業株式会社 | 発光装置 |
US7077978B2 (en) | 2004-05-14 | 2006-07-18 | General Electric Company | Phosphors containing oxides of alkaline-earth and group-IIIB metals and white-light sources incorporating same |
JP4565141B2 (ja) | 2004-06-30 | 2010-10-20 | 独立行政法人物質・材料研究機構 | 蛍光体と発光器具 |
US8417215B2 (en) | 2004-07-28 | 2013-04-09 | Koninklijke Philips Electronics N.V. | Method for positioning of wireless medical devices with short-range radio frequency technology |
JP4888624B2 (ja) * | 2004-07-30 | 2012-02-29 | 独立行政法人物質・材料研究機構 | α型サイアロン粉末の製造方法 |
US7138756B2 (en) | 2004-08-02 | 2006-11-21 | Dowa Mining Co., Ltd. | Phosphor for electron beam excitation and color display device using the same |
US7453195B2 (en) | 2004-08-02 | 2008-11-18 | Lumination Llc | White lamps with enhanced color contrast |
JP4524470B2 (ja) | 2004-08-20 | 2010-08-18 | Dowaエレクトロニクス株式会社 | 蛍光体およびその製造方法、並びに当該蛍光体を用いた光源 |
JP4543250B2 (ja) | 2004-08-27 | 2010-09-15 | Dowaエレクトロニクス株式会社 | 蛍光体混合物および発光装置 |
KR100772047B1 (ko) * | 2004-08-30 | 2007-10-31 | 가부시키가이샤후지쿠라 | 산질화물 형광체 및 발광 장치 |
JP4729281B2 (ja) | 2004-09-13 | 2011-07-20 | 株式会社フジクラ | 発光ダイオード及び発光ダイオード製造方法 |
US8154190B2 (en) | 2004-09-22 | 2012-04-10 | Kabushiki Kaisha Toshiba | Light emitting device with resin layer containing blue, green and red emitting phosphors which emits white light when excited by ultraviolet light |
JP4674348B2 (ja) | 2004-09-22 | 2011-04-20 | 独立行政法人物質・材料研究機構 | 蛍光体とその製造方法および発光器具 |
KR101168177B1 (ko) | 2004-09-22 | 2012-07-24 | 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 | 형광체와 그 제조방법 및 발광기구 |
US7265488B2 (en) | 2004-09-30 | 2007-09-04 | Avago Technologies General Ip Pte. Ltd | Light source with wavelength converting material |
JP2006114637A (ja) | 2004-10-13 | 2006-04-27 | Toshiba Corp | 半導体発光装置 |
EP1808471A4 (en) | 2004-10-15 | 2009-10-21 | Mitsubishi Chem Corp | FLUORESCENT MATERIAL, FLUORESCENT DEVICE USING THE MATERIAL, AND IMAGE DISPLAY DEVICE AND LIGHTING EQUIPMENT |
JP2006165266A (ja) | 2004-12-07 | 2006-06-22 | Matsushita Electric Works Ltd | 発光装置 |
US7356054B2 (en) | 2004-12-17 | 2008-04-08 | Nichia Corporation | Light emitting device |
JP4720177B2 (ja) | 2004-12-17 | 2011-07-13 | 日亜化学工業株式会社 | 発光装置 |
JP5134820B2 (ja) | 2004-12-24 | 2013-01-30 | 株式会社東芝 | 液晶表示装置 |
US20070114562A1 (en) | 2005-11-22 | 2007-05-24 | Gelcore, Llc | Red and yellow phosphor-converted LEDs for signal applications |
US7358542B2 (en) | 2005-02-02 | 2008-04-15 | Lumination Llc | Red emitting phosphor materials for use in LED and LCD applications |
US7648649B2 (en) | 2005-02-02 | 2010-01-19 | Lumination Llc | Red line emitting phosphors for use in led applications |
US7497973B2 (en) | 2005-02-02 | 2009-03-03 | Lumination Llc | Red line emitting phosphor materials for use in LED applications |
CN101712870A (zh) | 2005-02-28 | 2010-05-26 | 电气化学工业株式会社 | 荧光体及其制造方法及使用了该荧光体的发光元件 |
JP4104013B2 (ja) | 2005-03-18 | 2008-06-18 | 株式会社フジクラ | 発光デバイス及び照明装置 |
KR100984822B1 (ko) | 2005-03-22 | 2010-10-04 | 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 | 형광체와 그 제조 방법 |
JP2006332269A (ja) | 2005-05-25 | 2006-12-07 | Toyoda Gosei Co Ltd | 発光装置 |
JP2007049114A (ja) | 2005-05-30 | 2007-02-22 | Sharp Corp | 発光装置とその製造方法 |
JP4817728B2 (ja) | 2005-06-29 | 2011-11-16 | 株式会社東芝 | 超音波診断装置 |
JP4794235B2 (ja) | 2005-08-02 | 2011-10-19 | シャープ株式会社 | 発光装置 |
JP4832995B2 (ja) | 2005-09-01 | 2011-12-07 | シャープ株式会社 | 発光装置 |
US20070052342A1 (en) * | 2005-09-01 | 2007-03-08 | Sharp Kabushiki Kaisha | Light-emitting device |
JP4769132B2 (ja) | 2005-11-30 | 2011-09-07 | シャープ株式会社 | 発光装置 |
WO2007066733A1 (ja) | 2005-12-08 | 2007-06-14 | National Institute For Materials Science | 蛍光体とその製造方法および発光器具 |
US20090033201A1 (en) * | 2006-02-02 | 2009-02-05 | Mitsubishi Chemical Corporation | Complex oxynitride phosphor, light-emitting device using same, image display, illuminating device, phosphor-containing composition and complex oxynitride |
WO2008001799A1 (fr) | 2006-06-27 | 2008-01-03 | Mitsubishi Chemical Corporation | Dispositif d'éclairage |
US20080029720A1 (en) | 2006-08-03 | 2008-02-07 | Intematix Corporation | LED lighting arrangement including light emitting phosphor |
JP5367218B2 (ja) * | 2006-11-24 | 2013-12-11 | シャープ株式会社 | 蛍光体の製造方法および発光装置の製造方法 |
CN103215036B (zh) | 2007-07-09 | 2014-11-05 | 夏普株式会社 | 荧光体粒子组以及使用其的发光装置 |
JP2009019163A (ja) | 2007-07-13 | 2009-01-29 | Sharp Corp | 発光装置用蛍光体粒子集合体、発光装置、および液晶表示用バックライト装置 |
JP2009094199A (ja) | 2007-10-05 | 2009-04-30 | Sharp Corp | 発光装置、面光源、表示装置と、その製造方法 |
CN101960624B (zh) | 2008-03-03 | 2012-09-26 | 夏普株式会社 | 发光装置 |
JP5239941B2 (ja) | 2009-02-26 | 2013-07-17 | 豊田合成株式会社 | 発光装置の製造方法 |
US9000664B2 (en) | 2009-04-06 | 2015-04-07 | Sharp Kabushiki Kaisha | Phosphor particle group, light emitting apparatus using the same, and liquid crystal display television |
WO2011083671A1 (ja) | 2010-01-08 | 2011-07-14 | シャープ株式会社 | 蛍光体、発光装置およびそれを用いた液晶表示装置 |
JP4740379B1 (ja) * | 2010-02-25 | 2011-08-03 | 電気化学工業株式会社 | β型サイアロン蛍光体、その用途及びβ型サイアロン蛍光体の製造方法 |
CN102376860A (zh) | 2010-08-05 | 2012-03-14 | 夏普株式会社 | 发光装置及其制造方法 |
-
2006
- 2006-11-24 JP JP2006317524A patent/JP5367218B2/ja active Active
-
2007
- 2007-11-21 US US11/944,052 patent/US8663498B2/en active Active
- 2007-11-23 CN CN2007101936767A patent/CN101186820B/zh active Active
- 2007-11-23 CN CN2010102688982A patent/CN101935526B/zh active Active
-
2014
- 2014-01-28 US US14/166,231 patent/US9624427B2/en active Active
-
2016
- 2016-12-07 US US15/371,747 patent/US9884990B2/en active Active
-
2017
- 2017-10-19 US US15/788,302 patent/US10259997B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN101935526A (zh) | 2011-01-05 |
CN101186820B (zh) | 2013-03-13 |
US9884990B2 (en) | 2018-02-06 |
US20140139101A1 (en) | 2014-05-22 |
US20170081586A1 (en) | 2017-03-23 |
CN101935526B (zh) | 2013-11-20 |
JP2008127547A (ja) | 2008-06-05 |
US20180044587A1 (en) | 2018-02-15 |
CN101186820A (zh) | 2008-05-28 |
US20080258602A1 (en) | 2008-10-23 |
US8663498B2 (en) | 2014-03-04 |
US10259997B2 (en) | 2019-04-16 |
US9624427B2 (en) | 2017-04-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5367218B2 (ja) | 蛍光体の製造方法および発光装置の製造方法 | |
JP5643424B2 (ja) | 炭窒化物系蛍光体およびこれを使用する発光素子 | |
JP5547756B2 (ja) | 蛍光体粒子群およびそれを用いた発光装置 | |
US9331253B2 (en) | Light emitting diode (LED) component comprising a phosphor with improved excitation properties | |
JP4832995B2 (ja) | 発光装置 | |
JP5331089B2 (ja) | 蛍光体およびそれを用いた発光装置 | |
JP5589002B2 (ja) | 蛍光体、発光装置およびそれを用いた液晶表示装置 | |
JP2008081631A (ja) | 発光装置 | |
CN106795429B (zh) | 荧光体、发光装置、照明装置和图像显示装置 | |
JPWO2018056447A1 (ja) | 蛍光体、発光装置、照明装置及び画像表示装置 | |
WO2013105345A1 (ja) | 蛍光体及び発光装置 | |
WO2010041195A1 (en) | Blue emitting sion phosphor | |
WO2012036016A1 (ja) | 蛍光体および発光装置 | |
JP4785711B2 (ja) | 蛍光体およびそれを用いた発光装置 | |
WO2016076380A1 (ja) | 蛍光体、発光装置、照明装置及び画像表示装置 | |
JP2010196049A (ja) | 蛍光体及びその製造方法、蛍光体含有組成物、並びに、該蛍光体を用いた発光装置、画像表示装置及び照明装置 | |
JP4899433B2 (ja) | 蛍光体、並びにそれを用いた発光装置、画像表示装置及び照明装置 | |
WO2012124480A1 (ja) | 蛍光体および発光装置 | |
JP2016056246A (ja) | 蛍光体、発光装置、照明装置及び画像表示装置 | |
JP2017206599A (ja) | 蛍光体、発光装置、照明装置及び画像表示装置 | |
JP2015196717A (ja) | 蛍光体、蛍光体含有組成物、発光装置、画像表示装置及び照明装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090218 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110921 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111108 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120105 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121023 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121207 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130820 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130911 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5367218 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313114 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |