JP2921722B2 - チップ型サージアブソーバ - Google Patents
チップ型サージアブソーバInfo
- Publication number
- JP2921722B2 JP2921722B2 JP17612492A JP17612492A JP2921722B2 JP 2921722 B2 JP2921722 B2 JP 2921722B2 JP 17612492 A JP17612492 A JP 17612492A JP 17612492 A JP17612492 A JP 17612492A JP 2921722 B2 JP2921722 B2 JP 2921722B2
- Authority
- JP
- Japan
- Prior art keywords
- surge
- electrode
- electrode plate
- surge absorbing
- joined
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000006096 absorbing agent Substances 0.000 title description 30
- 239000004065 semiconductor Substances 0.000 claims description 17
- 229920005989 resin Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000005476 soldering Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000002457 bidirectional effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/044—Physical layout, materials not provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermistors And Varistors (AREA)
- Emergency Protection Circuit Devices (AREA)
Description
可能性のある一般の電子機器の回路又はその他の箇所に
設けられ、サージ電圧による電子機器の故障及び誤動作
を回避する半導体サージ吸収素子を含むサージアブソー
バに関する。更に詳しくはプリント回路基板の表面に直
接実装するに適したチップ型サージアブソーバに関する
ものである。
器の電子部品の一対の入力線路にこの電子部品に並列に
接続され、電子部品の使用電圧より高い電圧で動作する
ように構成される。即ち、サージアブソーバはその動作
電圧より低い電圧では抵抗値の高い抵抗体であるが、印
加電圧がその動作電圧以上のときには数10Ω以下の抵
抗値の低い抵抗体になる。電子部品に雷サージ等のサー
ジ電圧が瞬間的に印加されると、サージアブソーバが動
作し、サージ電圧を吸収する。これによりサージ電圧が
電子部品に印加されず、サージ電圧による電子機器の故
障や誤動作が回避される。
ージアブソーバとして、表面実装方式のチップ型サージ
アブソーバが知られている。図3に示すように、例えば
このサージアブソーバ1はサイリスタ構造の1個の半導
体サージ吸収素子2と、このサージ吸収素子2の上下の
両電極面2a,2bに各一端を接続し各他端を互いに同
一平面上に位置するように形成した一対の電極板3,4
と、電極板3,4の各他端を露出した状態でサージ吸収
素子2を被包した樹脂体5とを備える。電極板3,4の
各他端が同一平面上に位置するため、このサージアブソ
ーバ1は基板6の表面に直接実装することができる。
路では、上記一対の入力線路の間に1個のサージアブソ
ーバを接続して、一方の入力線路に印加されたサージ電
圧だけを吸収するだけでなく、他方の入力線路に印加さ
れたサージ電圧をも吸収できるように、複数個のサージ
アブソーバが用いられている。例えば、図4に示すよう
に、電子部品10に一対の入力線路8,9が接続する場
合、入力線路8とアースの間、及び入力線路9とアース
の間にそれぞれ前述したチップ型サージアブソーバ1が
接続される。また図5に示す場合、更に加えて入力線路
8,9間にチップ型サージアブソーバ1が接続される。
半導体サージ吸収素子を内蔵するサージアブソーバを用
いてサージ吸収回路を構成した場合、図4又は図5に示
すサージ吸収回路では2個又は3個のサージアブソーバ
を基板上に実装しなければならない。基板に実装するサ
ージアブソーバの数が多くなると、基板に広い実装面積
と多くの実装工数を必要とする問題点を生じる。本発明
の目的は、サージ電圧の吸収を必要とする電子機器への
配線数が増大し、複数のサージ吸収素子を実装するとき
に、プリント回路基板への実装面積を広く必要とせず、
僅かな工数で実装できるチップ型サージアブソーバを提
供することにある。
に、図1に示すように本願発明のチップ型サージアブソ
ーバ30は、中央に膨出部16aを有する第1電極板1
6と、この第1電極板16の両端上面にそれぞれ一方の
電極面11a,12aが接合された第1及び第2半導体
サージ吸収素子11,12と、第1サージ吸収素子11
の他方の電極面11bに一端が接合され他端が前記膨出
部16aと同一平面上に位置するように形成された第2
電極板17と、第2サージ吸収素子12の他方の電極面
12bに一端が接合され他端が膨出部16aと同一平面
上に位置するように形成された第3電極板18と、第3
電極板18の一端に一方の電極面13bが接合された第
3半導体サージ吸収素子13と、この第3サージ吸収素
子13の他方の電極面13aと第2電極板17の一端と
を接合する導電性部材14と、第1電極板16の膨出部
16aと第2電極板17の他端と第3電極板18の他端
とを露出した状態で第1、第2及び第3サージ吸収素子
11,12,13と前記導電性部材14とを被包した樹
脂体19とを備えたものである。
のように構成することもできる。即ち、第2電極板17
の一端に第3半導体サージ吸収素子13の一方の電極面
13bを接合し、第3サージ吸収素子13の他方の電極
面13aと第3電極板18の一端とを導電性部材14に
より接続する。この導電性部材14としては、銅線等の
ワイヤ又は銅板等の金属板を用いることができる。本発
明の半導体サージ吸収素子は、比較的小型でサージ耐量
の大きなシリコンサージ吸収素子が好ましい。シリコン
サージ吸収素子には双方向型、単方向型、逆阻止型があ
るが、小型化を考慮した場合双方向型シリコンサージ吸
収素子が好ましい。複数個のサージ吸収素子と複数枚の
電極板を接合して、この接合体を樹脂体で被包する方法
としては、サージ吸収素子と電極板とをはんだで接合し
た後、この接合体を所定の型枠に入れ、型枠に封止用樹
脂を注入した上、熱硬化して、最後に型枠を取除く方法
が好適である。樹脂としては、エポキン系樹脂が好まし
い。サージ吸収素子と電極板との接合は、通常はんだ付
けで行うが、導電性接着剤で接合してもよい。
より一体化した後、樹脂モールドすることにより、各電
極板を表面に設けた3端子の単一のチップ型サージアブ
ソーバが作製される。この結果、複数のサージ吸収素子
を広いスペースを必要とせずに、また僅かな工数で実装
することができる。
の実施例に限るものではない。図1に示すように、それ
ぞれ長さ約3mm、幅約3mm、厚さ約1mmの第1及
び第2双方向型半導体サージ吸収素子11及び12を用
意した。これらの素子11及び12はそれぞれシリコン
半導体で作られたサイリスタ構造をなす。これらの素子
11及び12の両面にはそれぞれ電極面11a,11b
及び12a,12bが形成される。これらの素子11及
び12を、中央に膨出部16aを有する断面形状が逆ハ
ット状の第1電極板16の両端上面にそれぞれ載せ、素
子11の一方の電極面11aと素子12の一方の電極面
12aを電極板16の両端上面にはんだ付けにより接合
した。これらの素子が接合された第1電極板16を図示
しない固定具により固定した後、第2電極板17の一端
の下面を素子11の他方の電極面11bに、また第3電
極板18の一端の下面を素子12の他方の電極面12b
にそれぞれはんだ付けにより接合した。第2及び第3電
極板17及び18はそれぞれ第1電極板16と同一幅を
有しかつサージ吸収素子と接合した状態でそれぞれ左右
対称になるように折曲げられる。また電極板17及び1
8の各他端は第1電極板16の膨出部16aと同一平面
上に位置するように形成される。次いで第3電極板18
の一端の上面に第1及び第2サージ吸収素子と同一構成
の第3サージ吸収素子13の一方の電極面13bをはん
だ付けで接合し、第3サージ吸収素子13の他方の電極
面13aと第2電極板17の一端の上面とをワイヤであ
る導電性部材14をボンディングすることにより接続し
た。
及び13と3枚の電極板16,17,18及び導電性部
材14からなる接合体を、図示しない内寸が縦約5mm
×横約10mm×高さ約3mmの型枠に入れた後、型枠
内にエポキシ系樹脂を注入した。樹脂が硬化した後、型
枠を取除いて、サージアブソーバ30を得た。図1に示
すように、樹脂体19の両側面から底面にかけてそれぞ
れ端子電極A及びBが露出し、かつ樹脂体19の底面の
中央部に中間電極Cが露出するように、予め型枠は形成
される。端子電極A及びBは第2及び第3電極板17,
18の各他端に、中間電極Cは膨出部16aにそれぞれ
相応する。図2に示すように電子部品10に一対の入力
線路8,9が接続された回路にこのチップ型サージアブ
ソーバ30を接続した。図示しない基板に端子電極A及
びBと、中間電極Cを接続するだけで図5に示されるサ
ージ吸収回路と等価な回路を形成することができた。
面実装方式の単一のチップ型サージアブソーバに数個の
半導体サージ吸収素子を内蔵させ、かつその底面に両端
子電極と中間電極を露出させるようにしたため、例え
ば、電話回線等のサージ吸収回路のように2個或いは3
個のサージ吸収素子が必要となる場合でも、本発明のサ
ージアブソーバを1個実装するだけで済む。この結果、
従来のサージ吸収素子を複数個使用する場合に比べて、
基板上の部品実装面積を減少させることができるととも
に、部品実装の工数を削減することができる。
断面図。
ージ吸収回路図。
Claims (1)
- 【請求項1】 中央に膨出部(16a)を有する第1電極板
(16)と、 前記第1電極板(16)の両端上面にそれぞれ一方の電極面
(11a,12a)が接合された第1及び第2半導体サージ吸収
素子(11,12)と、 前記第1サージ吸収素子(11)の他方の電極面(11b)に一
端が接合され他端が前記膨出部(16a)と同一平面上に位
置するように形成された第2電極板(17)と、 前記第2サージ吸収素子(12)の他方の電極面(12b)に一
端が接合され他端が前記膨出部(16a)と同一平面上に位
置するように形成された第3電極板(18)と、 前記第2又は第3電極板(17,18)の一端に一方の電極面
(13a)が接合された第3半導体サージ吸収素子(13)と、 前記第3サージ吸収素子(13)の他方の電極面(13b)と前
記第3又は第2電極板(18,17)の一端とを接続する導電
性部材(14)と、 前記第1電極板(16)の膨出部(16a)と前記第2電極板(1
7)の他端と前記第3電極板(18)の他端とを露出した状態
で前記第1、第2及び第3サージ吸収素子(16,17,18)と
前記導電性部材(14)とを被包した樹脂体(19)とを備えた
チップ型サージアブソーバ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17612492A JP2921722B2 (ja) | 1992-06-10 | 1992-06-10 | チップ型サージアブソーバ |
US08/071,751 US5416662A (en) | 1992-06-10 | 1993-06-09 | Chip-type surge absorber |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17612492A JP2921722B2 (ja) | 1992-06-10 | 1992-06-10 | チップ型サージアブソーバ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05343210A JPH05343210A (ja) | 1993-12-24 |
JP2921722B2 true JP2921722B2 (ja) | 1999-07-19 |
Family
ID=16008097
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17612492A Expired - Lifetime JP2921722B2 (ja) | 1992-06-10 | 1992-06-10 | チップ型サージアブソーバ |
Country Status (2)
Country | Link |
---|---|
US (1) | US5416662A (ja) |
JP (1) | JP2921722B2 (ja) |
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MX9700370A (es) | 1994-07-14 | 1998-03-31 | Surgx Corp | Estructuras de proteccion de voltaje variable y metodos para fabricarlas. |
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JP3764587B2 (ja) * | 1998-06-30 | 2006-04-12 | 富士通株式会社 | 半導体装置の製造方法 |
US6549114B2 (en) * | 1998-08-20 | 2003-04-15 | Littelfuse, Inc. | Protection of electrical devices with voltage variable materials |
US6366713B1 (en) | 1998-09-04 | 2002-04-02 | Tellabs Operations, Inc. | Strictly non-blocking optical switch core having optimized switching architecture based on reciprocity conditions |
US20100044079A1 (en) * | 1999-08-27 | 2010-02-25 | Lex Kosowsky | Metal Deposition |
US7695644B2 (en) | 1999-08-27 | 2010-04-13 | Shocking Technologies, Inc. | Device applications for voltage switchable dielectric material having high aspect ratio particles |
US7446030B2 (en) * | 1999-08-27 | 2008-11-04 | Shocking Technologies, Inc. | Methods for fabricating current-carrying structures using voltage switchable dielectric materials |
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US20100044080A1 (en) * | 1999-08-27 | 2010-02-25 | Lex Kosowsky | Metal Deposition |
WO2001017320A1 (en) | 1999-08-27 | 2001-03-08 | Lex Kosowsky | Current carrying structure using voltage switchable dielectric material |
US6363182B2 (en) | 2000-07-31 | 2002-03-26 | James D. Mills | Optical switch for reciprocal traffic |
US6850662B1 (en) | 2000-07-31 | 2005-02-01 | Tellabs Operations, Inc. | Optical switch for reciprocal traffic |
US7183891B2 (en) * | 2002-04-08 | 2007-02-27 | Littelfuse, Inc. | Direct application voltage variable material, devices employing same and methods of manufacturing such devices |
CN100350606C (zh) * | 2002-04-08 | 2007-11-21 | 力特保险丝有限公司 | 使用压变材料的装置 |
US7132922B2 (en) * | 2002-04-08 | 2006-11-07 | Littelfuse, Inc. | Direct application voltage variable material, components thereof and devices employing same |
CN101496167A (zh) | 2005-11-22 | 2009-07-29 | 肖克科技有限公司 | 用于过电压保护的包括电压可变换材料的半导体器件 |
US20100264224A1 (en) * | 2005-11-22 | 2010-10-21 | Lex Kosowsky | Wireless communication device using voltage switchable dielectric material |
US7981325B2 (en) * | 2006-07-29 | 2011-07-19 | Shocking Technologies, Inc. | Electronic device for voltage switchable dielectric material having high aspect ratio particles |
US20080032049A1 (en) * | 2006-07-29 | 2008-02-07 | Lex Kosowsky | Voltage switchable dielectric material having high aspect ratio particles |
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US7793236B2 (en) * | 2007-06-13 | 2010-09-07 | Shocking Technologies, Inc. | System and method for including protective voltage switchable dielectric material in the design or simulation of substrate devices |
US8206614B2 (en) | 2008-01-18 | 2012-06-26 | Shocking Technologies, Inc. | Voltage switchable dielectric material having bonded particle constituents |
US8203421B2 (en) * | 2008-04-14 | 2012-06-19 | Shocking Technologies, Inc. | Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration |
US20100047535A1 (en) * | 2008-08-22 | 2010-02-25 | Lex Kosowsky | Core layer structure having voltage switchable dielectric material |
JP2012504870A (ja) * | 2008-09-30 | 2012-02-23 | ショッキング テクノロジーズ インコーポレイテッド | 導電コアシェル粒子を含有する電圧で切替可能な誘電体材料 |
US9208931B2 (en) * | 2008-09-30 | 2015-12-08 | Littelfuse, Inc. | Voltage switchable dielectric material containing conductor-on-conductor core shelled particles |
US8362871B2 (en) * | 2008-11-05 | 2013-01-29 | Shocking Technologies, Inc. | Geometric and electric field considerations for including transient protective material in substrate devices |
US8106502B2 (en) * | 2008-11-17 | 2012-01-31 | Stats Chippac Ltd. | Integrated circuit packaging system with plated pad and method of manufacture thereof |
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US9226391B2 (en) | 2009-01-27 | 2015-12-29 | Littelfuse, Inc. | Substrates having voltage switchable dielectric materials |
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US8968606B2 (en) | 2009-03-26 | 2015-03-03 | Littelfuse, Inc. | Components having voltage switchable dielectric materials |
US9053844B2 (en) * | 2009-09-09 | 2015-06-09 | Littelfuse, Inc. | Geometric configuration or alignment of protective material in a gap structure for electrical devices |
US9320135B2 (en) | 2010-02-26 | 2016-04-19 | Littelfuse, Inc. | Electric discharge protection for surface mounted and embedded components |
US9082622B2 (en) | 2010-02-26 | 2015-07-14 | Littelfuse, Inc. | Circuit elements comprising ferroic materials |
US9224728B2 (en) | 2010-02-26 | 2015-12-29 | Littelfuse, Inc. | Embedded protection against spurious electrical events |
JP2011228208A (ja) * | 2010-04-22 | 2011-11-10 | Nippon Telegr & Teleph Corp <Ntt> | 心線保護方法 |
JP5652465B2 (ja) * | 2012-12-17 | 2015-01-14 | Tdk株式会社 | チップバリスタ |
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-
1992
- 1992-06-10 JP JP17612492A patent/JP2921722B2/ja not_active Expired - Lifetime
-
1993
- 1993-06-09 US US08/071,751 patent/US5416662A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5416662A (en) | 1995-05-16 |
JPH05343210A (ja) | 1993-12-24 |
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