JP2005212017A - 電子部品封止用基板および多数個取り用電子部品封止用基板ならびに電子装置の製造方法 - Google Patents
電子部品封止用基板および多数個取り用電子部品封止用基板ならびに電子装置の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 224
- 238000007789 sealing Methods 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000004020 conductor Substances 0.000 claims abstract description 94
- 239000004065 semiconductor Substances 0.000 claims abstract description 73
- 230000007246 mechanism Effects 0.000 claims abstract description 71
- 238000000034 method Methods 0.000 claims description 32
- 239000003990 capacitor Substances 0.000 claims description 14
- 238000005304 joining Methods 0.000 claims description 13
- 238000004377 microelectronic Methods 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 description 20
- 239000011521 glass Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 238000005520 cutting process Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000000843 powder Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 238000003466 welding Methods 0.000 description 9
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000002241 glass-ceramic Substances 0.000 description 4
- 229910000531 Co alloy Inorganic materials 0.000 description 3
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 3
- BPYMJIZUWGOKJS-UHFFFAOYSA-N [Ge].[Ag] Chemical compound [Ge].[Ag] BPYMJIZUWGOKJS-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 229910052863 mullite Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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Abstract
【解決手段】 一方主面から他方主面または側面に導出された複数の配線導体2が形成された絶縁基板1と、絶縁基板1の一方主面に形成された、配線導体2と接続された接続パッド3と、絶縁基板1の一方主面に、接続パッド3を取り囲むようにして接合された枠部材4と、接続パッド3上に形成された、枠部材4と同じ高さの接続端子5と、絶縁基板1の内部または表面に導体パターンを用いて形成されたローパスフィルタ12とから成り、半導体基板7の主面に微小電子機械機構8およびこれに接続された電極9が形成された電子部品10が、電極9を接続端子5に接合し、半導体基板7の主面を枠部材4の主面に接合されることによって、枠部材4の内側に微小電子機械機構8を気密封止する電子部品封止用基板6である。
【選択図】 図1
Description
2:配線導体
3:接続パッド
4:枠部材
5:接続端子
6:電子部品封止用基板
6a:電子部品封止領域
6b:電子部品封止用基板
7:半導体基板
8:微小電子機械機構
9:電極
10:電子部品
10a:電子部品領域
10b:電子部品
11:外部端子
12:ローパスフィルタ
Claims (6)
- 一方主面から他方主面または側面に導出された複数の配線導体が形成された絶縁基板と、該絶縁基板の前記一方主面に形成された、前記配線導体と電気的に接続された接続パッドと、前記絶縁基板の前記一方主面に前記接続パッドを取り囲むようにして接合された枠部材と、前記接続パッド上に形成された、前記枠部材と同じ高さの接続端子と、前記絶縁基板の内部または表面に形成された導体パターンから成るローパスフィルタとから成り、前記配線導体は高周波信号が伝送されるものを含み、前記ローパスフィルタは前記高周波信号が伝送される配線導体に直列に接続されており、半導体基板の主面に微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品の前記電極を前記接続端子に接合し、前記半導体基板の前記主面を前記枠部材の主面に接合することによって、前記枠部材の内側に前記電子部品の前記微小電子機械機構を気密封止することを特徴とする電子部品封止用基板。
- 前記ローパスフィルタは、π型に接続されたコンデンサおよびインダクタ回路から成ることを特徴とする請求項1記載の電子部品封止用基板。
- 前記絶縁基板は平面視形状が四角形であり、前記コンデンサは、前記枠部材よりも内側に、平面視で前記絶縁基板の対向する2辺の中心を通る直線または対角線に対して線対称に形成されていることを特徴とする請求項2記載の電子部品封止用基板。
- 前記ローパスフィルタは、直線状の前記導体パターンと、前記導体パターンに形成された複数の突出部とから構成されていることを特徴とする請求項1記載の電子部品封止用基板。
- 絶縁母基板の一方主面に多数個縦横に配列形成された、前記一方主面から他方主面または側面に導出された複数の配線導体が形成された絶縁基板領域と、該各絶縁基板領域の前記一方主面に形成された、前記配線導体と電気的に接続された接続パッドと、前記各絶縁基板領域の前記一方主面に前記接続パッドを取り囲むようにして接合された枠部材と、前記接続パッド上に形成された、前記枠部材と同じ高さの接続端子と、前記各絶縁基板領域の内部または表面に形成された導体パターンから成るローパスフィルタとから成り、前記配線導体は高周波信号が伝送されるものを含み、前記ローパスフィルタは前記高周波信号が伝送される配線導体に直列に接続されており、半導体基板の主面に微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品の前記電極を前記接続端子に接合し、前記半導体基板の前記主面を前記枠部材の主面に接合することによって、前記各絶縁基板領域の前記枠部材の内側に前記電子部品の前記微小電子機械機構をそれぞれ気密封止することを特徴とする多数個取り用電子部品封止用基板。
- 半導体基板の主面に、微小電子機械機構およびこれに電気的に接続された電極が形成されて成る電子部品領域を多数個縦横に配列形成した電子部品を準備する工程と、一方主面から他方主面または側面に導出された複数の配線導体が形成された絶縁基板と、該絶縁基板の前記一方主面に形成された、前記配線導体と電気的に接続された接続パッドと、前記絶縁基板の前記一方主面に前記接続パッドを取り囲むようにして接合された枠部材と、前記接続パッド上に形成された、前記枠部材と同じ高さの接続端子と、前記絶縁基板の内部または表面に形成された導体パターンから成るローパスフィルタとから成り、前記配線導体は高周波信号が伝送されるものを含み、前記ローパスフィルタは前記高周波信号が伝送される配線導体に直列に接続された電子部品封止領域を多数個、前記電子部品の前記電子部品領域に対応させて配列形成した電子部品封止用基板を準備する工程と、前記電子部品の前記電極を前記接続端子に接合するとともに、前記微小電子機械機構の周囲の前記半導体基板の前記主面を前記枠部材の主面に接合して、前記微小電子機械機構を前記枠部材の内側に気密封止する工程と、互いに接合された前記電子部品および前記電子部品封止用基板を前記電子部品封止領域毎に分割して、前記電子部品封止領域に前記電子部品領域が接合されて成る個々の電子装置を得る工程とを具備することを特徴とする電子装置の製造方法。
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JP2004020586A JP4761713B2 (ja) | 2004-01-28 | 2004-01-28 | 電子部品封止用基板および多数個取り用電子部品封止用基板ならびに電子装置の製造方法 |
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JP2005212017A true JP2005212017A (ja) | 2005-08-11 |
JP4761713B2 JP4761713B2 (ja) | 2011-08-31 |
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Cited By (9)
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JP2007160499A (ja) * | 2005-11-16 | 2007-06-28 | Kyocera Corp | 電子部品封止用基板および複数個取り形態の電子部品封止用基板、並びに電子部品封止用基板を用いた電子装置および電子装置の製造方法 |
JP2007214440A (ja) * | 2006-02-10 | 2007-08-23 | Dainippon Printing Co Ltd | 電子装置 |
JP2007214438A (ja) * | 2006-02-10 | 2007-08-23 | Dainippon Printing Co Ltd | センサーパッケージ |
JP2007214441A (ja) * | 2006-02-10 | 2007-08-23 | Dainippon Printing Co Ltd | 複合センサーパッケージ |
JP2008213061A (ja) * | 2007-03-01 | 2008-09-18 | Toshiba Corp | 半導体装置及びその製造方法 |
WO2009005017A1 (ja) * | 2007-06-29 | 2009-01-08 | Fujikura Ltd. | 半導体パッケージおよびその製造方法 |
US7845234B2 (en) | 2005-08-17 | 2010-12-07 | G-Device Corporation | Compact tilt and vibration sensor and method for manufacturing the same |
US8648663B2 (en) | 2011-04-13 | 2014-02-11 | Seiko Epson Corporation | Oscillator having a plurality of switchable MEMS vibrators |
US8669824B2 (en) | 2011-03-17 | 2014-03-11 | Seiko Epson Corporation | Oscillator having a plurality of switchable MEMS vibrators |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US7845234B2 (en) | 2005-08-17 | 2010-12-07 | G-Device Corporation | Compact tilt and vibration sensor and method for manufacturing the same |
JP2007160499A (ja) * | 2005-11-16 | 2007-06-28 | Kyocera Corp | 電子部品封止用基板および複数個取り形態の電子部品封止用基板、並びに電子部品封止用基板を用いた電子装置および電子装置の製造方法 |
JP2007214440A (ja) * | 2006-02-10 | 2007-08-23 | Dainippon Printing Co Ltd | 電子装置 |
JP2007214438A (ja) * | 2006-02-10 | 2007-08-23 | Dainippon Printing Co Ltd | センサーパッケージ |
JP2007214441A (ja) * | 2006-02-10 | 2007-08-23 | Dainippon Printing Co Ltd | 複合センサーパッケージ |
JP2008213061A (ja) * | 2007-03-01 | 2008-09-18 | Toshiba Corp | 半導体装置及びその製造方法 |
WO2009005017A1 (ja) * | 2007-06-29 | 2009-01-08 | Fujikura Ltd. | 半導体パッケージおよびその製造方法 |
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US8669824B2 (en) | 2011-03-17 | 2014-03-11 | Seiko Epson Corporation | Oscillator having a plurality of switchable MEMS vibrators |
US8648663B2 (en) | 2011-04-13 | 2014-02-11 | Seiko Epson Corporation | Oscillator having a plurality of switchable MEMS vibrators |
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