JP2004204256A - Low thermal expansion rectangular conductor - Google Patents
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- JP2004204256A JP2004204256A JP2002371988A JP2002371988A JP2004204256A JP 2004204256 A JP2004204256 A JP 2004204256A JP 2002371988 A JP2002371988 A JP 2002371988A JP 2002371988 A JP2002371988 A JP 2002371988A JP 2004204256 A JP2004204256 A JP 2004204256A
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- 239000004020 conductor Substances 0.000 title claims abstract description 79
- 229910000679 solder Inorganic materials 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910000969 tin-silver-copper Inorganic materials 0.000 claims description 2
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 claims 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 24
- 239000010703 silicon Substances 0.000 abstract description 24
- 230000007797 corrosion Effects 0.000 abstract description 7
- 238000005260 corrosion Methods 0.000 abstract description 7
- 230000007423 decrease Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 20
- 238000007747 plating Methods 0.000 description 17
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 16
- 239000000463 material Substances 0.000 description 12
- 229910052759 nickel Inorganic materials 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 229910020816 Sn Pb Inorganic materials 0.000 description 5
- 229910020922 Sn-Pb Inorganic materials 0.000 description 5
- 229910008783 Sn—Pb Inorganic materials 0.000 description 5
- 239000002131 composite material Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Other Surface Treatments For Metallic Materials (AREA)
- Non-Insulated Conductors (AREA)
Abstract
【課題】熱膨張が小さく、耐食性に優れた低熱膨張コア導体を提供する。
【解決手段】低熱膨張平角導体１は、断面形状が平角形を成したコア導体２と、このコア導体２の外表面に形成される被覆導体３を備えて構成される。コア導体２は、シリコンウェハの熱膨張係数と同等以下の１０×１０-6／℃以下の熱膨張係数を有する。被覆導体３は５．０μΩ・ｃｍ以下の体積抵抗率を有するために導電性の低下が防止されることにより太陽電池の効率低下が防止され、更に、コア導体２に被覆されることにより、水分に起因してコア導体２の表面に局部電池が発生するのを防止することができる。
【選択図】 図１A low-thermal-expansion core conductor having low thermal expansion and excellent corrosion resistance is provided.
A low-thermal-expansion rectangular conductor (1) includes a core conductor (2) having a rectangular cross section and a coated conductor (3) formed on the outer surface of the core conductor (2). The core conductor 2 has a coefficient of thermal expansion of 10 × 10 −6 / ° C. or less, which is equal to or less than the coefficient of thermal expansion of the silicon wafer. Since the coated conductor 3 has a volume resistivity of 5.0 μΩ · cm or less, a decrease in conductivity is prevented, thereby preventing a decrease in efficiency of the solar cell. Therefore, it is possible to prevent a local battery from being generated on the surface of the core conductor 2 due to the above.
[Selection diagram] Fig. 1
Description
【０００１】
【発明の属する技術分野】
本発明は、低熱膨張平角導体に関し、特に、熱膨張が小さく、耐食性に優れ、太陽電池を構成するシリコンウェハの配線パターン部に接続するためのリード線用導体に適した低熱膨張平角導体に関する。
【０００２】
【従来の技術】
太陽電池は、基板上にシリコン結晶を成長させた半導体チップを用いて構成されている。この種の太陽電池は、一般に、シリコン結晶ウェハの所定の領域に接続用リード線を接合し、この接続用リード線を通して負荷へ発電出力を供給する構成が採用されている。
【０００３】
図２は、太陽電池の構成例を示す。
受光した太陽光を光電変換して電力を発生する太陽電池１０は、シリコン（Ｓｉ）ウェハ１１と、このシリコンウェハ１１の表面の所定の領域にできるだけ面積を制限して形成されたＡｇめっき部１２，１３とを備えて構成されている。Ａｇめっき部１２，１３は発電出力を取り出すための配線パターンであり、このＡｇめっき部１２，１３のそれぞれには、その幅方向の範囲内に納まるようにして接続用リード線１４，１５が接続される。
【０００４】
通常、接続用リード線１４，１５の外表面（外周面）には、ウェハ上のＡｇめっき部１２，１３に接続するためのはんだめっき層が形成される。はんだめっき層の構成材には、他の電気部品において従来より実績のあるＳｎ−Ｐｂ合金系のはんだが使用されてきた。例えば、タフピッチ銅や無酸素銅などの純銅製の平角導体を導体（接続用リード線）に用い、そのはんだめっき層にＳｎ−Ｐｂ共晶はんだを用いたものがある（例えば、特許文献１参照）。
【０００５】
これまで多用されてきたＳｎ−Ｐｂ系はんだは、リード線としての導電性や機械的強度等を保証しつつ、優れたはんだ濡れ性、高い接続強度、あるいは取扱性等によって特徴づけられた有用性の高いめっき材料として知られている。したがって、このＳｎ−Ｐｂ系に代わるはんだめっき材としては、上記した様な諸特性を十分に満たしている必要がある。
【０００６】
しかし、最近では、Ｐｂによる環境への悪影響が懸念されるため、Ｐｂを含まない他のめっき用はんだへの切り換えが検討されている。Ｓｎ−Ｐｂ系に代わるＰｂを含まないめっき材としては、Ｓｎ−Ａｇ系、Ｓｎ−Ｂｉ系、あるいはＳｎ−Ｃｕ系等のはんだが有力視されている。これらのはんだは、太陽電池における接続用リード線の接合のためのめっき層の構成材としてだけでなく、様々な電気部品における接続要素としての活用が期待されている。例えば、導体に銅条を用い、そのめっき層として、Ｓｎを主要な成分とすると共に所定のＰを含む組成のフリーはんだを用いた接続用リード線がある（例えば、特許文献２参照）。
【０００７】
ところで、太陽電池を構成する部材のうちで材料コストの大半を占めるのが、シリコンウェハである。そのため、シリコンウェハの薄板化が検討されている。
しかし、シリコンウェハを薄板化した場合、接続用リード線の接合時の加熱プロセスや使用時の温度変化によって、シリコンウェハが破損することがある。これに対処するため、熱膨張の小さい接続用リード線のニーズが高まっている。
【０００８】
熱膨張を考慮したリード線の構成例として、リード線をクラッド金属で形成したものがある。このリード線は、体積抵抗率が小さく熱膨張係数が大きい銅の層と、この銅層の両面に体積抵抗率が大きく熱膨張係数の小さいＦｅ−Ｎｉ（鉄−ニッケル）合金の層を積層して「銅−インバー−銅」をクラッドした３層構造にし、リード線接合部に要求される応力緩衝の機能とリード線としての強度を備える平角導体としている（例えば、特許文献３参照）。
【０００９】
【特許文献１】
特開平１１−２１６６０号公報
【特許文献２】
特開２００２−２６３８８０号公報
【特許文献３】
特開２００２−２９９００９号公報
【００１０】
【発明が解決しようとする課題】
しかし、従来の平角導体によると、クラッド材を適用した特許文献３の構成では、側面（積層状態が露出する面）の「銅−インバー−銅」接合部が水分に晒されることによって局部電池化し、これによって腐食する恐れがある。したがって、薄板化したシリコンウェハに接続するリード線は、熱膨張が小さく、かつ耐食性に優れる特性を備える必要がある。
【００１１】
したがって、本発明の目的は、熱膨張が小さく、耐食性に優れた低熱膨張平角導体を提供することにある。
【００１２】
【課題を解決するための手段】
本発明は、上記の目的を達成するため、１０×１０-6／℃以下の熱膨張係数を有し、断面形状が平角形を成したコア導体と、５．０μΩ・ｃｍ以下の体積抵抗率を有し、前記コア導体の外表面に形成される被覆導体とを備えることを特徴とする低熱膨張平角導体を提供する。
【００１３】
この構成によれば、コア導体は、シリコンの熱膨張係数と同等以下の熱膨張係数である１０×１０-6／℃以下の値にしたことにより、薄板化した太陽電池用のシリコンウェハの接続用リード線に用いても、シリコンウェハを破損する恐れはなくなる。そして、被覆導体の体積抵抗率を５．０μΩ・ｃｍ以下にしたことで十分な導電性が得られることにより太陽電池の効率低下が防止され、更に、コア導体の外表面に被覆導体が形成されることにより、水分に起因してコア導体の表面に局部電池が発生するのを防止することができる。
【００１４】
【発明の実施の形態】
以下、本発明の実施の形態を図面に基づいて説明する。
図１は、本願発明の低熱膨張平角導体を示す。
本発明に係る低熱膨張平角導体１は、コア導体２（断面形状は角形を成している）と被覆導体３による複合平角導体の構造を有している。コア導体２と被覆導体３とは異なる組成であり、被覆導体３はコア導体２の外表面に被覆する如くに形成される。コア導体２の外表面に被覆導体３が設けられることにより、コア導体２の側面に水分が存在しても、局部電池化が生じないようにすることができる。
【００１５】
コア導体２には熱膨張係数の小さい金属、具体的には鉄−ニッケル合金が用いられ、その熱膨張係数を１０×１０-6／℃以下にしている。その理由は、２０℃のシリコン（図２のシリコンウェハ１１）の熱膨張係数（９．６×１０-6／℃）と同等以下にするためである。そして、シリコンウェハとの熱膨張係数の差が小さいもの、具体的には実施例で説明する様に、断面積比（Ｃｕ：Ｆｅ−３６ｍａｓｓ％Ｎｉ）が２：１のものが最適であり、また、断面積比率（Ｃｕ：Ｆｅ−３６ｍａｓｓ％Ｎｉ）は、２０〜５０％とするのが好ましい。特に、好ましくは３０〜４０％である。
【００１６】
また、被覆導体３には、所望の導電特性が得られるように、体積抵抗率の小さい銅、銀、アルミニウム等の金属、又はこれら金属を主成分とする合金を用いる。被覆導体３の体積抵抗率は、具体的には５．０μΩ・ｃｍ以下とし、太陽電池の効率が低下しないようにしている。
【００１７】
なお、被覆導体３には、その外周面（外表面）の一部又は全体に対し、予め「錫−鉛」はんだめっき、又は「錫−銀−銅」を主成分とする鉛フリーはんだめっきを施すことができる。このようにはんだめっきを用いることにより、シリコンウェハに接続するための作業性が良好になる。
【００１８】
以上のように、本発明に係る実施の形態は、コア導体２に熱膨張係数の小さい合金（鉄−ニッケル合金等）を用い、その熱膨張係数を１０×１０-6／℃以下としたことにより熱膨張を小さくでき、熱膨張に起因するシリコンウェハの破損の発生を防止することができる。更に、被覆導体３に体積抵抗率の小さい金属又は合金（銅、銀、金、アルミニウム、又はそのいずれか１つ以上を含む合金）を用いたことにより、太陽電池の効率を低下させることなく、同時に耐食性を得ることができる。また、被覆導体３は、鉛を含まない金属又は合金を用いているため、環境汚染を招くことがない。
【００１９】
【実施例】
次に、本発明の実施例について説明する。
〔実施例１〕
図１に示す構造の低熱膨張平角導体１において、コア導体２にＦｅ−３６ｍａｓｓ％Ｎｉを用い、被覆導体３にＣｕを用い、表１に示す材料を作製した。なお、比較例（後述する表２、表３も同一値）は、平角導体を銅のみとした場合である。また、参考値（後述する表２、表３も同一値）は、Ｓｉ及びＦｅ−３６ｍａｓｓ％Ｎｉの熱膨張係数及び体積抵抗率である。
【００２０】
【表１】
〔実施例２〕
図１に示す構造の複合平角導体において、コア導体２にＦｅ−３６ｍａｓｓ％Ｎｉ、被覆導体３にＡｇを適用し、表２に示す構成の材料を作製した。
【００２２】
【表２】
〔実施例３〕
図１に示す構造の複合平角導体において、コア導体２にＦｅ−３６ｍａｓｓ％Ｎｉ、被覆導体３にＡｌを適用し、表３に示す構成の材料を作製した。
【００２４】
【表３】
本発明の各実施例によれば、表１〜表３から明らかなように、被覆導体３の材料が代わっても、熱膨張係数は比較例に比べ、断面積比によらず小さい値が得られるが、断面積比が１：１のときに最も良い結果が得られる。また、体積抵抗率は、Ｃｕの比率が高くなるほど小さくなり、断面積比（Ｃｕ：Ｆｅ−３６ｍａｓｓ％Ｎｉ）が大きくなるほど好結果が得られることがわかる。しかし、シリコンの熱膨張係数と同等以下の熱膨張係数が得られるか否かを考慮すると、断面積比を２：１としたときが最も好ましい結果であることがわかる。
【００２６】
上記実施の形態においては、低熱膨張平角導体を太陽電池の接続用リード線に用いる用途を示したが、他の用途、例えば、１ＧＨｚ以上の高周波信号を伝送するための導体として使用することも可能である。特に、熱膨張により伝送特性が著しく劣化するような無線ＬＡＮ等への用途に適している。
【００２７】
【発明の効果】
以上より明らかなように、本発明の低熱膨張平角導体によれば、１０×１０-6／℃以下の熱膨張係数を有する平角形のコア導体と、このコア導体の外表面に形成されると共に５．０μΩ・ｃｍ以下の体積抵抗率を有する被覆導体とを備える構成にしたので、熱膨張係数が小さく耐蝕性に優れる低熱膨張平角導体を得ることができる。したがって、太陽電池の接続用リード線に用いた場合でも、薄板化されたシリコンウェハを破損する恐れはなくなる。
【図面の簡単な説明】
【図１】本発明の低熱膨張平角導体を示す断面図である。
【図２】太陽電池の概略構成例を示す斜視図である。
【符号の説明】
１ 低熱膨張平角導体
２ コア導体
３ 被覆導体
１０ 太陽電池
１１ シリコンウェハ
１２，１３ Ａｇめっき部
１４，１５ 接続用リード線[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a low-thermal-expansion rectangular conductor, particularly to a low-thermal-expansion rectangular conductor having low thermal expansion, excellent corrosion resistance, and suitable for a lead wire conductor for connecting to a wiring pattern portion of a silicon wafer constituting a solar cell.
[0002]
[Prior art]
A solar cell is configured using a semiconductor chip in which a silicon crystal is grown on a substrate. In general, this type of solar cell employs a configuration in which a connection lead wire is bonded to a predetermined region of a silicon crystal wafer, and power generation output is supplied to a load through the connection lead wire.
[0003]
FIG. 2 shows a configuration example of a solar cell.
A solar cell 10 that generates electric power by photoelectrically converting received sunlight includes a silicon (Si)
[0004]
Normally, solder plating layers for connecting to the
[0005]
Sn-Pb-based solders, which have been widely used, have usefulness characterized by excellent solder wettability, high connection strength, and easy handling while guaranteeing the conductivity and mechanical strength of the lead wires. It is known as a high plating material. Therefore, it is necessary for the solder plating material to replace the Sn-Pb-based material to sufficiently satisfy the above-described various characteristics.
[0006]
However, recently, since there is a concern that Pb may have an adverse effect on the environment, switching to another plating solder containing no Pb is being studied. As a plating material containing no Pb instead of the Sn-Pb-based solder, a Sn-Ag-based, Sn-Bi-based, or Sn-Cu-based solder is considered to be promising. These solders are expected to be used not only as a constituent material of a plating layer for joining a connecting lead wire in a solar cell but also as a connecting element in various electric components. For example, there is a connection lead wire using a copper strip as a conductor and using a free solder having a composition containing Sn as a main component and a predetermined P as a plating layer (for example, see Patent Document 2).
[0007]
By the way, silicon wafers occupy most of the material cost among the members constituting the solar cell. Therefore, thinning of a silicon wafer is being studied.
However, when the silicon wafer is thinned, the silicon wafer may be damaged due to a heating process at the time of joining the connection lead wires or a temperature change at the time of use. In order to cope with this, there is an increasing need for connection lead wires having small thermal expansion.
[0008]
As a configuration example of a lead wire in consideration of thermal expansion, there is a lead wire formed of a clad metal. This lead wire is formed by laminating a copper layer having a small volume resistivity and a large thermal expansion coefficient, and a Fe-Ni (iron-nickel) alloy layer having a large volume resistivity and a small thermal expansion coefficient on both surfaces of the copper layer. To form a three-layer structure in which "copper-invar-copper" is clad to provide a rectangular conductor having a function of buffering stress required for a lead wire joint and the strength as a lead wire (for example, see Patent Document 3).
[0009]
[Patent Document 1]
JP-A-11-21660 [Patent Document 2]
JP 2002-263880 A [Patent Document 3]
JP 2002-29909 A
[Problems to be solved by the invention]
However, according to the conventional rectangular conductor, in the configuration of Patent Document 3 to which the clad material is applied, the “copper-invar-copper” joint on the side surface (the surface where the laminated state is exposed) is exposed to moisture, thereby forming a local battery. , Which can cause corrosion. Therefore, a lead wire connected to a thinned silicon wafer needs to have characteristics of low thermal expansion and excellent corrosion resistance.
[0011]
Therefore, an object of the present invention is to provide a low-thermal-expansion rectangular conductor having small thermal expansion and excellent corrosion resistance.
[0012]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides a core conductor having a coefficient of thermal expansion of 10 × 10 −6 / ° C. or less and a rectangular cross section, and a volume resistivity of 5.0 μΩ · cm or less. And a covered conductor formed on the outer surface of the core conductor.
[0013]
According to this configuration, the core conductor has a coefficient of thermal expansion equal to or less than 10 × 10 −6 / ° C. which is equal to or less than the coefficient of thermal expansion of silicon, thereby connecting a thinned silicon wafer for a solar cell. Even if it is used for a lead wire for use, there is no risk of damaging the silicon wafer. Further, by setting the volume resistivity of the coated conductor to 5.0 μΩ · cm or less, sufficient conductivity is obtained, thereby preventing the efficiency of the solar cell from lowering. Further, the coated conductor is formed on the outer surface of the core conductor. This can prevent a local battery from being generated on the surface of the core conductor due to moisture.
[0014]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 shows a low thermal expansion rectangular conductor of the present invention.
The low thermal expansion rectangular conductor 1 according to the present invention has a composite rectangular conductor structure including a core conductor 2 (having a rectangular cross section) and a covering conductor 3. The core conductor 2 and the coated conductor 3 have different compositions, and the coated conductor 3 is formed so as to cover the outer surface of the core conductor 2. By providing the covering conductor 3 on the outer surface of the core conductor 2, even if moisture is present on the side surface of the core conductor 2, it is possible to prevent a local battery from being generated.
[0015]
The core conductor 2 is made of a metal having a small coefficient of thermal expansion, specifically, an iron-nickel alloy, and has a coefficient of thermal expansion of 10 × 10 −6 / ° C. or less. The reason is to make the thermal expansion coefficient (9.6 × 10 −6 / ° C.) of silicon at 20 ° C. (
[0016]
In addition, a metal such as copper, silver, or aluminum having a small volume resistivity or an alloy containing these metals as a main component is used for the coated conductor 3 so that desired conductive characteristics can be obtained. The volume resistivity of the coated conductor 3 is specifically set to 5.0 μΩ · cm or less so that the efficiency of the solar cell does not decrease.
[0017]
The coated conductor 3 is preliminarily plated with “tin-lead” solder plating or “tin-silver-copper” lead-free solder plating on a part or the entire outer peripheral surface (outer surface) thereof. Can be applied. By using solder plating in this manner, workability for connecting to a silicon wafer is improved.
[0018]
As described above, in the embodiment according to the present invention, the core conductor 2 is made of an alloy having a small coefficient of thermal expansion (such as an iron-nickel alloy) and the coefficient of thermal expansion is set to 10 × 10 −6 / ° C. or less. Thus, thermal expansion can be reduced, and damage to the silicon wafer due to thermal expansion can be prevented. Furthermore, by using a metal or an alloy (copper, silver, gold, aluminum, or an alloy containing at least one of them) having a small volume resistivity for the coated conductor 3, without lowering the efficiency of the solar cell, At the same time, corrosion resistance can be obtained. Further, since the covered conductor 3 is made of a metal or alloy containing no lead, it does not cause environmental pollution.
[0019]
【Example】
Next, examples of the present invention will be described.
[Example 1]
In the low thermal expansion rectangular conductor 1 having the structure shown in FIG. 1, materials shown in Table 1 were produced by using Fe-36 mass% Ni for the core conductor 2 and Cu for the covering conductor 3. In addition, the comparative example (Tables 2 and 3 described later also have the same value) is a case where the rectangular conductor is only copper. Reference values (the same values in Tables 2 and 3 described later) are the thermal expansion coefficient and volume resistivity of Si and Fe-36 mass% Ni.
[0020]
[Table 1]
[Example 2]
In the composite rectangular conductor having the structure shown in FIG. 1, Fe-36 mass% Ni was applied to the core conductor 2 and Ag was applied to the coated conductor 3, and materials having the configurations shown in Table 2 were produced.
[0022]
[Table 2]
[Example 3]
In the composite rectangular conductor having the structure shown in FIG. 1, Fe-36 mass% Ni was applied to the core conductor 2 and Al was applied to the coated conductor 3, and materials having the configurations shown in Table 3 were produced.
[0024]
[Table 3]
According to each embodiment of the present invention, as is clear from Tables 1 to 3, even when the material of the coated conductor 3 is changed, a small value of the thermal expansion coefficient is obtained irrespective of the cross-sectional area ratio as compared with the comparative example. However, the best results are obtained when the cross-sectional area ratio is 1: 1. In addition, it can be seen that the volume resistivity decreases as the Cu ratio increases, and that a better result can be obtained as the cross-sectional area ratio (Cu: Fe-36 mass% Ni) increases. However, considering whether or not a thermal expansion coefficient equal to or less than the thermal expansion coefficient of silicon is obtained, it is understood that the most preferable result is obtained when the cross-sectional area ratio is 2: 1.
[0026]
In the above embodiment, the use of the low-thermal-expansion rectangular conductor for the connection lead wire of the solar cell has been described. However, other uses, such as a conductor for transmitting a high-frequency signal of 1 GHz or more, can be used. It is. In particular, it is suitable for use in wireless LANs and the like in which transmission characteristics are significantly deteriorated due to thermal expansion.
[0027]
【The invention's effect】
As is clear from the above, according to the low thermal expansion rectangular conductor of the present invention, a rectangular core conductor having a thermal expansion coefficient of 10 × 10 −6 / ° C. or less and a rectangular core conductor formed on the outer surface of the core conductor With the configuration including the coated conductor having a volume resistivity of 5.0 μΩ · cm or less, a low thermal expansion rectangular conductor having a small thermal expansion coefficient and excellent corrosion resistance can be obtained. Therefore, even when the thinned silicon wafer is used as a connection lead wire for a solar cell, there is no possibility of damaging the thinned silicon wafer.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a low thermal expansion rectangular conductor of the present invention.
FIG. 2 is a perspective view showing a schematic configuration example of a solar cell.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Low thermal expansion rectangular conductor 2 Core conductor 3 Coated conductor 10
Claims (4)
５．０μΩ・ｃｍ以下の体積抵抗率を有し、前記コア導体の外表面に形成される被覆導体とを備えることを特徴とする低熱膨張平角導体。A core conductor having a coefficient of thermal expansion of 10 × 10 −6 / ° C. or less and having a rectangular cross section;
A low thermal expansion rectangular conductor having a volume resistivity of 5.0 μΩ · cm or less, and a coated conductor formed on an outer surface of the core conductor.
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| JP2002371988A JP3879666B2 (en) | 2002-12-24 | 2002-12-24 | Lead wire for solar cell connection |
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| JP2002371988A JP3879666B2 (en) | 2002-12-24 | 2002-12-24 | Lead wire for solar cell connection |
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