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JP2004090128A - Semiconductor wafer grinder - Google Patents

Semiconductor wafer grinder Download PDF

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Publication number
JP2004090128A
JP2004090128A JP2002252689A JP2002252689A JP2004090128A JP 2004090128 A JP2004090128 A JP 2004090128A JP 2002252689 A JP2002252689 A JP 2002252689A JP 2002252689 A JP2002252689 A JP 2002252689A JP 2004090128 A JP2004090128 A JP 2004090128A
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JP
Japan
Prior art keywords
semiconductor wafer
grinding
housing
suction
grindstone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002252689A
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Japanese (ja)
Inventor
Shiro Murai
村井 史朗
Tomoyuki Kawazu
河津 知之
Tetsuo Okuyama
奥山 哲雄
Kunihiro Saida
斎田 国広
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Nippei Toyama Corp
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Nippei Toyama Corp
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Filing date
Publication date
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Priority to JP2002252689A priority Critical patent/JP2004090128A/en
Publication of JP2004090128A publication Critical patent/JP2004090128A/en
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  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the grinding surface of a semiconductor wafer from being contaminated by contamination in a grinding chamber during grinding and after grinding. <P>SOLUTION: In this semiconductor wafer grinder, freely opened and closed dust-proof covers 70, 80 covering an area of the grinding surface 11 of the semiconductor wafer 10 that does not face a grinding wheel 30 are provided in an enclosure 60, and the dust-proof covers 70, 80 are put in the closing state to form the grinding chamber 100. A jet nozzle 44 for jetting a fluid serving as a washing medium for giving a washing effect to the grinding surface 11 of the semiconductor wafer 10 is provided in the grinding chamber 100. After grinding, the dust-proof covers 70, 80 are opened to carry semiconductor wafer 10 out of the enclosure 60 by a conveying arm 7. <P>COPYRIGHT: (C)2004,JPO

Description

【0001】
【発明の属する技術分野】
本発明は、極薄円盤状の半導体ウエーハを片面研削する半導体ウエーハ研削盤において、研削加工後の半導体ウエーハを研削作業に伴って発生する削り屑や汚濁水などで汚れた研削室からハンドリング等で取り出すときに、半導体ウエーハの加工面や吸着面が汚れるのを防止でき清浄維持するための機構を備えたものに関する。
【0002】
【従来の技術】
図6は、従来の半導体ウエーハ研削盤において、クーラント42と共に削り屑6が飛び散る様子の説明図である。
【0003】
図7(a)は従来の半導体ウエーハ研削盤において、飛び散った削り屑6などを含む汚濁水49が筐体60の天井61から研削面11に滴下した様子を示す説明図であり、図7(b)は、吸着パッド1の吸着面2に落下した削り屑6などが付着したまま、新しい半導体ウエーハ10を吸着パッド1に載置した様子の模式図である。
【0004】
図6に示すように、半導体ウエーハ研削盤に、補助装置としてクーラント供給装置40が付設され、クーラント供給装置40は液送管41を介してクーラント42を研削面11に滴下している。半導体ウエーハ10が、ロータリーテーブル20上に載置され、真空吸着により保持され、矢印J方向に毎分約100回転で回転している。
【0005】
ロータリーテーブル20の回転軸から、回転半径の長さ位離れた位置に垂直に配設された別の砥石軸Zに軸支されたホルダ32に取付けられて砥石を構成するカップ状の砥石30が、ロータリーテーブル20に対して、互いの円盤面を部分的に面接触させるため、部分的に砥石30が覆い被さるような位置関係に配設されている。
【0006】
そして、半導体ウエーハ10の研削面11の一部に、砥石30の下側の砥石面31が、その一部を摺接し、図示せぬモータに軸直結されるか、または前記モータからベルトを介して矢印K方向に回転する。
【0007】
また、研削面11と砥石面31を適宜に摺接させるため、また半導体ウエーハ10がロータリーテーブル20上で研削工程に合わせて間欠的に載置・吸着・保持・離脱されるように、砥石30には、そのZ軸方向に昇降可能な昇降機構(図示せず)がある。
【0008】
すなわちロータリーテーブル20のテーブル面と砥石面31の間隔を大きく広げて、前記テーブル面上に、半導体ウエーハ10を挿入するようにセットし、隙間を閉じてから、所定の切り込みにより研削加工する。なお、ロータリーテーブル20と砥石30のそれぞれの回転制御も適宜になされる。
【0009】
ここで、図6および図7に示すように、研削面11や吸着面2に落下する塵埃や削り屑6などにはシリコンの切粉の他、例えば300〜350番の荒さに相当するダイヤモンドの粒が砥石面31から脱落した破片などがある。これらを含めた削り屑6が粉塵として空中に飛散し、室内を汚し、さらにはクーラント42に混じった汚濁水49が当該装置の筐体60の天井61から滴下する。なお、筐体60は説明の便宜上、透明な立方体を仮想したに過ぎない。
【0010】
このとき、図7(b)に示すように、筐体60内に搬入された半導体ウエーハ10が、ロータリーテーブル20上に載置され、矢印Vに示す真空吸引により吸着面2に吸着保持される際に、吸着パッド1の吸着面2に落下した塵埃や削り屑6などが付着したまま、削り屑6を噛み込んで新しい半導体ウエーハ10を吸着パッド1に載置した場合は、盤面平坦度(Total Thickness Variation;以下「TTV」と略す)を悪化させ、ウエーハ割れ、または傷付きの原因になる。
【0011】
また、研削加工後の半導体ウエーハ10を、ハンドリング等で取り出すときに、半導体ウエーハ10の研削面11が筐体60の天井61から落下する汚濁水49で汚れていると、半導体ウエーハ10を吸着してハンドリングする吸着パッドの吸着面にも、同様に削り屑6を噛み込む現象が生じ、半導体ウエーハ10の研削面11を傷付けたり、吸着力が低下する原因にもなる。
【0012】
【発明が解決しようとする課題】
近年の半導体メモリー、ICチップ、大容量メモリを備えた高速処理可能なパソコンなどに内蔵される超小型ICになる30〜50μmの極薄円盤状の半導体ウエーハを研削加工する研削盤には、品質管理上、三つの課題がある。第1に清浄、第2にTTV、第3に冷却である。これら、三つの課題は半導体ウエーハの極薄化が進む程に高度に厳密な管理を要求される。
【0013】
一般的に半導体ウエーハの最終用途である電子機器などに対する要求が、軽く、薄く、短く、小さく、しかも高性能であることを追求されて止まない以上、前述した三つの課題を解決する必要がある。なお、これら三つの課題である第1に清浄、第2にTTV、第3に冷却に関し、それぞれが技術概念としては異なっても、解決手段としては同一または類似の技術によることがある。
【0014】
本発明は、精密かつ安定品質を要求される半導体ウエーハ研削盤において、特にウエーハ交換時の研削面11や吸着パッド1の吸着面2を初め、研削加工中の研削面11およびその周辺の半導体ウエーハ10全体に対して清浄維持するように、研削加工に伴って発生する切粉などの削り屑6を洗浄・除去し、TTVも所定範囲に維持し、かつ冷却も確保することにより、鏡面仕上げの品質を維持できるようにした半導体ウエーハ研削盤を提供することを目的としている。
【0015】
【課題を解決するための手段】
前記目的を達成するために、請求項1に係る発明は、半導体ウエーハ(10)の搬入口(62)を有する筐体(60)と、この筐体(60)内に設けられ搬入された半導体ウエーハ(10)を吸着して保持する吸着面(2)と、前記筐体(60)内に設けられ前記吸着面(2)に吸着保持された半導体ウエーハ(10)の研削面(11)に対して砥石面(31)が対面して回転自在に軸支された砥石(30)と、を備えた半導体ウエーハ研削盤において、前記筐体(60)内において研削時の砥石高さ位置で、前記砥石(30)の外周に沿って円弧状の切欠部(72),(82)が設けられ、前記切欠部(72),(82)を通して前記砥石(30)が前記研削面(11)に対面摺接可能とし、前記半導体ウエーハ(10)の研削面(11)の露出部分を覆う開閉自在の防塵カバー(70),(80)を備え、前記防塵カバー(70),(80)を閉じた状態で研削室(100)が形成されることを特徴とする。
【0016】
請求項1のようにしたので、研削加工中の前記研削面(11)に発生する削り屑(6)を空中に巻き上げず、しかも工場内に漂う塵埃等が前記研削面(11)の上に落下しても付着させないように、前記防塵カバー(70),(80)で遮蔽できる。
【0017】
また、研削加工後は、防塵カバー(70),(80)を開放し、半導体ウエーハ(10)の上方から防塵カバー(70),(80)を退避させることができ、従って防塵カバー(70),(80)に付着した削り屑(6)や汚濁水(49)が落下して前記半導体ウエーハ(10)を汚すようなことがなく、しかも筐体(60)の天井(61)は滴下する汚れが付かないことから半導体ウエーハ(10)を清浄な状態で筐体(60)の外部へ搬出することができる。また、半導体ウエーハ搬出後の吸着面(2)も清浄に維持することができる。
【0018】
また、請求項2に係る発明は、前記研削室(100)内において、少なくとも前記研削面(11)に対して洗浄効果を付与し得る洗浄媒体となる流体を噴出する噴射ノズル(44)を備えたので、研削加工中、半導体ウエーハ(10)の研削面(11)を常に清浄・冷却でき、高精度な加工ができるとともに、研削室(100)内だけに限定して効率良く洗浄と冷却ができ、研削室(100)外まで前記流体を拡散することなく、工場内を清浄に保つことができる。
【0019】
また、請求項3に係る発明は、前記防塵カバー(70),(80)には、前記半導体ウエーハ(10)に対峙する面に前記噴射ノズル(75),(85)を備えたので、確実かつ効率良く清浄維持および冷却ができる。また、前記噴射ノズル(75),(85)から前記研削面(11)までの距離を微小にできるので、前記防塵カバー(70),(80)が嵩張らず、装置全体を小型軽量にできる。
【0020】
また、請求項4に係る発明は、前記防塵カバー(70),(80)には、前記吸着面(2)に前記半導体ウエーハ(10)を着脱交換可能とする開口面積を有して前記研削面(11)を露出するヒンジ開閉式またはスライド式の開閉機構を備えたので、大量生産に対応できる。
【0021】
すなわち、大量生産するために前記半導体ウエーハ(10)の研削作業の進捗に対応して、ワークである前記半導体ウエーハ(10)の着脱交換を連続的に繰り返す作業においては、前記防塵カバー(70),(80)を開けて、前記研削面(11)を露出すれば、ワークである前記半導体ウエーハ(10)を着脱交換するのに足りる面積の開口部から前記半導体ウエーハ(10)を着脱交換できる。従って、円滑かつ確実に清浄維持および冷却ができて、しかも大量生産に対応できる。
【0022】
【発明の実施の形態】
以下、図面に沿って、本発明による実施の一形態について説明する。なお、各図にわたり、同一効果の物には同一符号を付けて説明の重複を避けているが、同一効果の部位でも断面の切り口などによっては違った形に図示していることがある。
【0023】
図1は本発明の実施の一形態を示す半導体ウエーハ研削盤の縦断面図であり、(a)は防塵カバーとして備えたヒンジドア70とスライドカバー80を閉じた状態、(b)は防塵カバーとして備えた70とスライドカバー80を開けた状態を示す。
【0024】
筐体60の側壁には半導体ウエーハ10を搬出入するための搬送アーム7が挿入可能な搬入口62が開口され、そのベース65には枠体63が一体に立渡されている。筐体60の内部には、防塵カバーとして備えたヒンジドア70とスライドカバー80が設けられ、閉じた状態において、吸着面2,砥石30を覆う研削室100が形成されている。
【0025】
図2は図1の筐体60内部において、防塵カバーとして備えたヒンジドア70とスライドカバー80が、それぞれ矢印M,N方向に開いた状態の半導体ウエーハ研削盤を示す要部斜視図である。これらの、防塵カバーには、吸着面2に半導体ウエーハ10を着脱交換可能とする開口面積を有して研削面11を露出するヒンジ開閉式またはスライド式の開閉機構を備えている。
【0026】
図3は、図2に示すヒンジドア70とスライドカバー80を矢印S,T方向に閉じた状態を示す要部斜視図である。
図1ないし図3に示すように、ヒンジドア70はヒンジ71により筐体60と一体の枠体63に回動自在に枢着され、スライドカバー80はロータリーテーブル20に対し水平方向を摺動自在にガイド81で支承されている。そして、それぞれシリンダ76,86により開閉駆動される。
【0027】
ヒンジドア70のドア端の一部には、ほぼ半月形の切欠部72を設け、切欠部72の端面73には、砥石30の外周面33との間に僅かな隙間を空けて、閉塞時に嵌合する。この隙間は、ヒンジドア70の開閉時および閉塞時に外周面33と端面73が接触しない最小限でよい。
【0028】
一方、スライドカバー80の突き合わせ部の一部は、ほぼ半月形の切欠部82を設け、切欠部82の端面83は、砥石30の外周面33との間が接触しない程度に僅かな隙間を空けて、閉塞時に嵌合する。
また、図1に示すように、半導体ウエーハ10の研削面11に付着した削り屑6を効率良く洗浄して徐去するように、砥石30から外れた部分の研削面11に対し斜め上から洗浄媒体となる純水を噴射する噴射ノズル44が、洗浄効率を高くするような噴射角度で配設されている。
【0029】
すなわち、図1(a),図3に示すように、ヒンジドア70とスライドカバー80を閉じた状態で周知の片面研削する。その際に発生する削り屑6は、研削室100から外部へ飛散しないし、このとき矢印P方向から供給される高圧水を噴射ノズル44が、斜め上から噴射するので、研削面11に付着しようとする削り屑6を効率良く洗浄して徐去する。なお、砥石30の種類や片面研削の工程によっては、純水を噴射する角度および水圧等の勢いを加減する。
【0030】
なお、特許請求の範囲でいう「洗浄媒体となる流体」は液体でも気体でも構わないが、本実施形態では純水を洗浄媒体に用いている。
【0031】
ここで動作について説明する。
図1(b),図2に示すように、ヒンジドア70とスライドカバー80を開けてから、半導体ウエーハ10をロータリーテーブル20上に着脱交換のハンドリングを行う。これら、ヒンジドア70とスライドカバー80の開閉動作は、シリンダ76,86により行われる。また、ハンドリングは、吸着パッド1aを有する搬送アーム7により行う。なお、砥石30およびホルダ32は、その軸方向に昇降可能な昇降機構(図示せず)により適宜に昇降がされる。
【0032】
また、図1(a),図3に示すように、ロータリーテーブル20上に載置された半導体ウエーハ10の研削面11の露出部分をヒンジドア70とスライドカバー80で覆い隠してから片面研削を開始する。その後、片面研削を終了すれば、ヒンジドア70とスライドカバー80を開き、覆い隠していた研削面11を露出させる。それから、再び半導体ウエーハ10をロータリーテーブル20上に着脱交換するハンドリング等の一連の操作を繰り返すことにより、大量生産に対応する。
【0033】
なお、図1(a),図3に示す噴射ノズル44は、ヒンジドア70またはスライドカバー80が厚肉の構造であれば、その内部に埋め込まれた配管等によりヒンジドア70またはスライドカバー80と一体構造にしてもよい。
【0034】
図4,図5は、図1(a),図3で示す噴射ノズル44に代え、複数個の噴射ノズル75,85を用い、それらをヒンジドア70またはスライドカバー80の面に、半導体ウエーハ10の研削面11の砥石30から外れている部分に対峙する位置に埋め込み、あるいは直接取付けた例を示す。図示しない複数の配管を介して取り付けることもできる。このようにすることにより、複数個の噴射ノズル75,85から同時または選択的に純水を噴射できるので、研削面11全面を均一に洗浄、冷却することができる。
【0035】
さらに、切欠部72,82の端面73,83には、その端面73,83に対峙する砥石30の外周面33に向けた噴射ノズル74,84が複数個を等間隔に配設されている。この噴射ノズル74,84は、砥石30の片面研削に伴って発生する削り屑6を洗浄するために、例えばエアを噴射する。ただし、実際にエアを噴射するのは図5に示すようにヒンジドア70とスライドカバー80を閉じてからである。
【0036】
なお、本発明は、その技術思想の範囲内で種々の改良が可能であり、前述した実施の一形態の他にも多様な実施形態が考えられる。それらにおいて、噴射ノズル44,74,75,84,85が、純水あるいはエアを噴射することにより研削面11や砥石30を洗浄し、その洗浄効果と合わせて周囲に削り屑6を飛散させないヒンジドア70、スライドカバー80に類する覆いを設けた場合は、全て本願発明に属することは当然である。
【0037】
【発明の効果】
本発明は、以上説明したように構成したので、精密かつ安定品質を要求される半導体ウエーハ研削盤において、研削加工中や研削加工後のウエーハ交換時、研削面およびその周辺の半導体ウエーハ全体に対して清浄維持ができ、これにより、鏡面仕上げの品質を維持できるようにした半導体ウエーハ研削盤を提供できる。
【0038】
また、請求項1に係る発明によれば、研削加工中の研削面に発生する削り屑を空中に巻き上げず、しかも工場内に漂う塵埃等が研削面の上に落下しても付着させないように、防塵カバーで遮蔽できる。
【0039】
また、研削加工後は、防塵カバーを開放し、半導体ウエーハの上方から防塵カバーを退避させることができ、従って防塵カバーに付着した削り屑や汚濁水が落下して半導体ウエーハを汚すようなことがなく、しかも筐体の天井は滴下する汚れが付かないことから半導体ウエーハを清浄な状態で筐体の外部へ搬出することができる。また、半導体ウエーハ搬出後の吸着面も清浄に維持することができる。
【0040】
また、請求項2に係る発明によれば、研削加工中、半導体ウエーハの研削面を常に清浄・冷却でき、高精度な加工ができるとともに、研削室内だけに限定して効率良く洗浄と冷却ができ、研削室外まで流体を拡散することなく、工場内を清浄に保つことができる。
【0041】
また、請求項3に係る発明によれば、確実かつ効率良く清浄維持および冷却ができる。また、噴射ノズルから研削面までの距離を微小にできるので、防塵カバーが嵩張らず、装置全体を小型軽量にできる。
【0042】
また、請求項4に係る発明によれば、大量生産に対応できる。
【図面の簡単な説明】
【図1】本発明の実施の一形態を示す半導体ウエーハ研削盤の縦断面図であり、(a)は防塵カバーを閉じた状態、(b)は防塵カバーを開いた状態を示す。
【図2】図1の半導体ウエーハ研削盤において筐体内部の防塵カバーを開いた状態を示す斜視図である。
【図3】図2のものにおいて、防塵カバーを閉じた状態を示す斜視図である。
【図4】図2のものを変形した実施の形態を示し、筐体内部の防塵カバーを開いた状態を示す斜視図である。
【図5】図4のものにおいて、防塵カバーを閉じた状態を示す斜視図である。
【図6】従来の半導体ウエーハ研削盤においてクーラントと共に削り屑などが飛び散る様子の説明図である。
【図7】(a)は従来の半導体ウエーハ研削盤において、飛び散った削り屑などを含む汚濁水が研削面に滴下した様子を示す説明図であり、(b)は、吸着パッドの吸着面に落下した削り屑などが付着したまま、新しい半導体ウエーハを吸着パッドに載置した様子の模式図である。
【符号の説明】
1,1a 吸着パッド
2 吸着面
6 削り屑
7 搬送アーム
10 半導体ウエーハ
11 研削面
20 ロータリーテーブル
30 砥石
31 砥石面
32 ホルダ
33 外周面
40 クーラント供給装置
41 液送管
42 クーラント
44,74,75,84,85 噴射ノズル
46,J,K,M,N,S,T,V 矢印
49 汚濁水
60 筐体
61 天井
62 搬入口
63 枠体
65 ベース
70 ヒンジドア
71 ヒンジ
72,82 切欠部
73,83 端面
76,86 シリンダ
80 スライドカバー
81 ガイド
100 研削室
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention is directed to a semiconductor wafer grinding machine for single-side grinding of an ultra-thin disk-shaped semiconductor wafer, by handling the semiconductor wafer after grinding from a grinding chamber that is contaminated with shavings or contaminated water generated during the grinding operation. The present invention relates to a semiconductor wafer provided with a mechanism for preventing the processing surface and the suction surface of the semiconductor wafer from being stained when the semiconductor wafer is taken out and for maintaining the semiconductor wafer clean.
[0002]
[Prior art]
FIG. 6 is an explanatory view showing how the shavings 6 scatter together with the coolant 42 in a conventional semiconductor wafer grinding machine.
[0003]
FIG. 7A is an explanatory view showing a state in which contaminated water 49 including scattered shavings 6 drops from the ceiling 61 of the housing 60 onto the grinding surface 11 in the conventional semiconductor wafer grinding machine. FIG. 2B is a schematic diagram showing a state in which a new semiconductor wafer 10 is placed on the suction pad 1 while the shavings 6 and the like that have fallen onto the suction surface 2 of the suction pad 1 are attached.
[0004]
As shown in FIG. 6, a coolant supply device 40 is provided as an auxiliary device on the semiconductor wafer grinding machine, and the coolant supply device 40 drops a coolant 42 onto the grinding surface 11 via a liquid feed pipe 41. A semiconductor wafer 10 is mounted on a rotary table 20, held by vacuum suction, and rotates at about 100 revolutions per minute in the direction of arrow J.
[0005]
A cup-shaped grindstone 30 which is attached to a holder 32 supported by another grindstone axis Z which is vertically disposed at a position away from the rotation axis of the rotary table 20 by the length of the rotation radius and constitutes a grindstone is provided. In order to bring the disk surfaces of the rotary table 20 into partial surface contact with each other, the rotary table 20 is disposed in a positional relationship such that the grindstone 30 partially covers the disk surface.
[0006]
Then, a part of the grinding surface 11 of the semiconductor wafer 10 is slidably contacted with a part of the grinding surface 31 on the lower side of the grinding wheel 30 and is directly connected to a motor (not shown) via a shaft or from the motor via a belt. To rotate in the direction of arrow K.
[0007]
Further, the grinding wheel 30 is placed so that the grinding surface 11 and the grinding wheel surface 31 slide properly, and the semiconductor wafer 10 is intermittently placed, sucked, held and released on the rotary table 20 in accordance with the grinding process. Has a lifting mechanism (not shown) that can be raised and lowered in the Z-axis direction.
[0008]
That is, the distance between the table surface of the rotary table 20 and the grindstone surface 31 is greatly widened, the semiconductor wafer 10 is set on the table surface so as to be inserted, the gap is closed, and then grinding is performed by a predetermined cut. The rotation of each of the rotary table 20 and the grindstone 30 is appropriately controlled.
[0009]
Here, as shown in FIGS. 6 and 7, dust and shavings 6 falling on the grinding surface 11 and the suction surface 2 are not only silicon chips but also diamond, for example, having a roughness of 300 to 350. There are debris or the like in which grains are dropped from the grindstone surface 31. The shavings 6 including these are scattered in the air as dust, fouling the room, and further, the polluted water 49 mixed with the coolant 42 drops from the ceiling 61 of the housing 60 of the device. Note that the housing 60 is merely a virtual cube for convenience of explanation.
[0010]
At this time, as shown in FIG. 7B, the semiconductor wafer 10 carried into the housing 60 is placed on the rotary table 20 and is suction-held on the suction surface 2 by vacuum suction indicated by an arrow V. At this time, when the new semiconductor wafer 10 is placed on the suction pad 1 by biting the shavings 6 while the dust or the shavings 6 that have fallen on the suction surface 2 of the suction pad 1 adhere to the board surface flatness ( Total Thickness Variation (hereinafter abbreviated as “TTV”), which may cause wafer cracking or damage.
[0011]
In addition, when the semiconductor wafer 10 after the grinding process is taken out by handling or the like, if the ground surface 11 of the semiconductor wafer 10 is contaminated with the contaminated water 49 falling from the ceiling 61 of the housing 60, the semiconductor wafer 10 is absorbed. Similarly, a phenomenon in which the shavings 6 are bitten also occurs on the suction surface of the suction pad to be handled, thereby damaging the ground surface 11 of the semiconductor wafer 10 and causing a reduction in the suction force.
[0012]
[Problems to be solved by the invention]
In recent years, ultra-compact ICs built into high-speed processing personal computers equipped with semiconductor memories, IC chips, and large-capacity memories, etc. have become ultra-compact ICs. There are three management issues. The first is clean, the second is TTV, and the third is cooling. These three issues require highly strict management as the semiconductor wafer becomes extremely thin.
[0013]
In general, the demands for electronic devices, etc., which are the final applications of semiconductor wafers, are light, thin, short, small, and high-performance. . Regarding these three issues, namely, first, cleanliness, secondly, TTV, and thirdly, cooling, although they have different technical concepts, they may be solved by the same or similar technology.
[0014]
The present invention relates to a semiconductor wafer grinding machine that requires precise and stable quality, particularly, the grinding surface 11 during wafer replacement and the suction surface 2 of the suction pad 1, the grinding surface 11 during grinding, and the semiconductor wafer in the vicinity thereof. In order to keep the entire surface 10 clean, the shavings 6 such as cutting chips generated by the grinding process are washed and removed, the TTV is also maintained in a predetermined range, and the cooling is also ensured, so that the mirror finish is achieved. It is an object of the present invention to provide a semiconductor wafer grinding machine capable of maintaining quality.
[0015]
[Means for Solving the Problems]
In order to achieve the above object, the invention according to claim 1 provides a housing (60) having a loading port (62) for a semiconductor wafer (10), and a semiconductor provided in the housing (60) and loaded. A suction surface (2) for sucking and holding the wafer (10) and a ground surface (11) of the semiconductor wafer (10) provided in the housing (60) and sucked and held on the suction surface (2). And a grindstone (30) rotatably supported with a grindstone surface (31) facing the grindstone surface (31). Arc-shaped notches (72) and (82) are provided along the outer circumference of the whetstone (30), and the whetstone (30) is connected to the grinding surface (11) through the notches (72) and (82). A grinding surface (11) of the semiconductor wafer (10), which is capable of facing sliding contact. Openable dustproof cover for covering an exposed portion (70) comprises a (80), the dustproof cover (70), characterized in that the grinding chamber (100) is formed in a closed (80).
[0016]
According to the first aspect, the shavings (6) generated on the grinding surface (11) during the grinding process are not rolled up in the air, and dust and the like floating in the factory are on the grinding surface (11). The dust-proof covers (70) and (80) can be shielded so as not to adhere even if dropped.
[0017]
After the grinding, the dustproof covers (70) and (80) are opened, and the dustproof covers (70) and (80) can be retracted from above the semiconductor wafer (10). , (80) does not fall off the shavings (6) or the contaminated water (49) and contaminate the semiconductor wafer (10), and drops on the ceiling (61) of the housing (60). Since the semiconductor wafer (10) is not contaminated, the semiconductor wafer (10) can be carried out of the housing (60) in a clean state. Further, the suction surface (2) after the semiconductor wafer has been carried out can also be kept clean.
[0018]
Further, the invention according to claim 2 includes an injection nozzle (44) for ejecting a fluid serving as a cleaning medium capable of imparting a cleaning effect to at least the grinding surface (11) in the grinding chamber (100). Therefore, during the grinding process, the grinding surface (11) of the semiconductor wafer (10) can always be cleaned and cooled, and high-precision processing can be performed. In addition, the cleaning and cooling can be efficiently performed only in the grinding chamber (100). It is possible to keep the inside of the factory clean without diffusing the fluid to the outside of the grinding chamber (100).
[0019]
According to the third aspect of the present invention, the dustproof covers (70) and (80) are provided with the jet nozzles (75) and (85) on the surface facing the semiconductor wafer (10), so In addition, clean maintenance and cooling can be performed efficiently. Further, since the distance from the spray nozzles (75), (85) to the grinding surface (11) can be made small, the dust-proof covers (70), (80) do not become bulky, and the whole apparatus can be made small and light.
[0020]
The invention according to claim 4 is characterized in that the dustproof covers (70) and (80) have an opening area on the suction surface (2) so that the semiconductor wafer (10) can be attached and detached and replaced. Since a hinge opening / closing type or sliding opening / closing mechanism that exposes the surface (11) is provided, it can be used for mass production.
[0021]
That is, in the operation of continuously repeating the attachment / detachment / replacement of the semiconductor wafer (10) as a work in accordance with the progress of the grinding operation of the semiconductor wafer (10) for mass production, the dustproof cover (70) is used. , (80) are opened to expose the ground surface (11), the semiconductor wafer (10) can be detached and replaced through an opening having an area sufficient to detachably replace the semiconductor wafer (10) as a work. . Therefore, clean and smooth maintenance and cooling can be performed smoothly and reliably, and mass production can be supported.
[0022]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Throughout the drawings, the same effects are denoted by the same reference numerals to avoid repetition of description, but the same effects may be shown in different shapes depending on the cross-sectional cuts and the like.
[0023]
FIG. 1 is a longitudinal sectional view of a semiconductor wafer grinding machine according to an embodiment of the present invention, in which (a) shows a state in which a hinge door 70 and a slide cover 80 provided as dustproof covers are closed, and (b) shows a dustproof cover. A state where the provided 70 and the slide cover 80 are opened is shown.
[0024]
On the side wall of the case 60, a carry-in port 62 into which the transfer arm 7 for carrying in and out the semiconductor wafer 10 is inserted is opened, and a frame body 63 is integrally erected on a base 65 thereof. A hinge door 70 provided as a dustproof cover and a slide cover 80 are provided inside the housing 60, and a grinding chamber 100 that covers the suction surface 2 and the grindstone 30 in a closed state is formed.
[0025]
FIG. 2 is a perspective view of a main part of the semiconductor wafer grinding machine in a state where a hinge door 70 and a slide cover 80 provided as dustproof covers are opened in directions of arrows M and N, respectively, inside the housing 60 of FIG. These dustproof covers are provided with a hinge opening / closing type or a sliding type opening / closing mechanism that has an opening area on the suction surface 2 that allows the semiconductor wafer 10 to be detachably exchanged and that exposes the grinding surface 11.
[0026]
FIG. 3 is a perspective view of an essential part showing a state where the hinge door 70 and the slide cover 80 shown in FIG. 2 are closed in the directions of arrows S and T.
As shown in FIGS. 1 to 3, the hinge door 70 is pivotally attached to a frame 63 integrated with the housing 60 by a hinge 71, and the slide cover 80 is slidable in the horizontal direction with respect to the rotary table 20. Guide 81 supports. Then, they are opened and closed by the cylinders 76 and 86, respectively.
[0027]
A substantially half-moon-shaped notch 72 is provided at a part of the door end of the hinged door 70, and a small gap is provided between the notch 72 and the outer peripheral surface 33 of the grindstone 30 so as to fit when closed. Combine. This gap may be minimized so that the outer peripheral surface 33 does not come into contact with the end surface 73 when the hinge door 70 is opened and closed and closed.
[0028]
On the other hand, a part of the butted portion of the slide cover 80 is provided with a substantially half-moon-shaped notch 82, and an end surface 83 of the notch 82 is provided with a slight gap so as not to make contact with the outer peripheral surface 33 of the grindstone 30. And fit when closed.
Further, as shown in FIG. 1, a portion of the grinding surface 11 off the grindstone 30 is washed obliquely from above so that the shavings 6 attached to the grinding surface 11 of the semiconductor wafer 10 are efficiently cleaned and gradually removed. An injection nozzle 44 that injects pure water serving as a medium is disposed at an injection angle that increases the cleaning efficiency.
[0029]
That is, as shown in FIGS. 1A and 3, the well-known single-side grinding is performed with the hinge door 70 and the slide cover 80 closed. The shavings 6 generated at this time do not scatter from the grinding chamber 100 to the outside. At this time, the high-pressure water supplied from the direction of the arrow P is sprayed from obliquely upward by the spray nozzle 44, so that it will adhere to the grinding surface 11. Is efficiently washed and gradually removed. Depending on the type of the grindstone 30 and the single-side grinding process, the momentum such as the angle at which pure water is injected and the water pressure are adjusted.
[0030]
The “fluid serving as a cleaning medium” in the claims may be a liquid or a gas, but in the present embodiment, pure water is used as the cleaning medium.
[0031]
The operation will now be described.
As shown in FIGS. 1B and 2, after opening the hinge door 70 and the slide cover 80, the semiconductor wafer 10 is handled on the rotary table 20 for detachment and replacement. The opening and closing operations of the hinge door 70 and the slide cover 80 are performed by the cylinders 76 and 86. Handling is performed by the transfer arm 7 having the suction pad 1a. The grindstone 30 and the holder 32 are appropriately moved up and down by a lifting mechanism (not shown) that can move up and down in the axial direction.
[0032]
Also, as shown in FIGS. 1A and 3, the exposed portion of the grinding surface 11 of the semiconductor wafer 10 placed on the rotary table 20 is covered with the hinge door 70 and the slide cover 80, and then the single-side grinding is started. I do. After that, when the one-side grinding is completed, the hinge door 70 and the slide cover 80 are opened to expose the ground surface 11 that has been covered. Then, by repeating a series of operations such as handling for detaching and replacing the semiconductor wafer 10 on the rotary table 20 again, it is possible to cope with mass production.
[0033]
The injection nozzle 44 shown in FIGS. 1A and 3 has an integral structure with the hinge door 70 or the slide cover 80 by using a pipe or the like embedded therein if the hinge door 70 or the slide cover 80 has a thick structure. It may be.
[0034]
FIGS. 4 and 5 use a plurality of injection nozzles 75 and 85 instead of the injection nozzles 44 shown in FIGS. 1A and 3, and attach them to the surface of the hinge door 70 or the slide cover 80 by using the semiconductor wafer 10. An example in which the grinding surface 11 is embedded or directly mounted at a position facing a portion of the grinding surface 11 that is separated from the grinding stone 30 is shown. It can also be mounted via a plurality of pipes not shown. By doing so, pure water can be simultaneously or selectively injected from the plurality of injection nozzles 75 and 85, so that the entire surface of the grinding surface 11 can be uniformly washed and cooled.
[0035]
Further, on the end faces 73, 83 of the notches 72, 82, a plurality of spray nozzles 74, 84 directed toward the outer peripheral face 33 of the grindstone 30 facing the end faces 73, 83 are arranged at equal intervals. The jet nozzles 74 and 84 jet, for example, air to wash the shavings 6 generated due to the single-side grinding of the grindstone 30. However, the air is actually injected after the hinge door 70 and the slide cover 80 are closed as shown in FIG.
[0036]
Note that the present invention can be variously improved within the scope of the technical idea, and various embodiments other than the above-described embodiment are conceivable. In these hinge doors, the injection nozzles 44, 74, 75, 84, and 85 clean the grinding surface 11 and the grindstone 30 by injecting pure water or air, and together with the cleaning effect, do not scatter the shavings 6 around. When a cover similar to 70 and the slide cover 80 is provided, it naturally belongs to the present invention.
[0037]
【The invention's effect】
Since the present invention has been configured as described above, in a semiconductor wafer grinding machine required to be precise and stable quality, when the wafer is replaced during the grinding process or after the grinding process, the ground surface and the entire semiconductor wafer around the same are removed. Thus, a semiconductor wafer grinder can be provided which can maintain cleanliness and thereby maintain the quality of mirror finish.
[0038]
According to the first aspect of the present invention, shavings generated on the ground surface during the grinding process are not rolled up in the air, and dust and the like drifting in the factory are prevented from adhering even if dropped on the ground surface. , Can be shielded by dustproof cover.
[0039]
After grinding, the dust-proof cover can be opened and the dust-proof cover can be evacuated from above the semiconductor wafer.Therefore, shavings and contaminated water adhering to the dust-proof cover may fall and contaminate the semiconductor wafer. In addition, the semiconductor wafer can be carried out of the housing in a clean state because the ceiling of the housing does not have dripping dirt. Further, the suction surface after the semiconductor wafer has been carried out can also be kept clean.
[0040]
According to the second aspect of the present invention, the grinding surface of the semiconductor wafer can be constantly cleaned and cooled during the grinding process, high-precision processing can be performed, and cleaning and cooling can be efficiently performed only in the grinding chamber. In addition, the inside of the factory can be kept clean without diffusing the fluid to the outside of the grinding room.
[0041]
According to the third aspect of the invention, it is possible to reliably and efficiently maintain and cool the cleaning. Further, since the distance from the spray nozzle to the grinding surface can be made small, the dustproof cover does not become bulky and the whole apparatus can be made small and lightweight.
[0042]
Further, according to the invention of claim 4, it is possible to cope with mass production.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view of a semiconductor wafer grinding machine according to an embodiment of the present invention, in which (a) shows a state where a dust cover is closed, and (b) shows a state where the dust cover is opened.
FIG. 2 is a perspective view showing a state in which a dust cover inside a housing is opened in the semiconductor wafer grinding machine of FIG. 1;
FIG. 3 is a perspective view showing a state in which a dust cover is closed in FIG.
FIG. 4 is a perspective view showing a modified embodiment of FIG. 2, showing a state in which a dust cover inside a housing is opened.
FIG. 5 is a perspective view showing a state in which a dust cover is closed in FIG.
FIG. 6 is an explanatory view showing how chips and the like are scattered together with a coolant in a conventional semiconductor wafer grinding machine.
FIG. 7A is an explanatory view showing a state in which contaminated water including scattered shavings and the like is dropped on a grinding surface in a conventional semiconductor wafer grinding machine, and FIG. FIG. 4 is a schematic diagram showing a state in which a new semiconductor wafer is placed on a suction pad while falling shavings and the like are attached.
[Explanation of symbols]
1, 1a suction pad 2 suction surface 6 shavings 7 transfer arm 10 semiconductor wafer 11 grinding surface 20 rotary table 30 grindstone 31 grindstone surface 32 holder 33 outer peripheral surface 40 coolant supply device 41 liquid supply pipe 42 coolant 44, 74, 75, 84 , 85 Injection nozzle 46, J, K, M, N, S, T, V Arrow 49 Polluted water 60 Housing 61 Ceiling 62 Carrying entrance 63 Frame 65 Base 70 Hinge door 71 Hinge 72, 82 Notch 73, 83 End face 76 , 86 Cylinder 80 Slide cover 81 Guide 100 Grinding chamber

Claims (4)

半導体ウエーハ(10)の搬入口(62)を有する筐体(60)と、
この筐体(60)内に設けられ搬入された半導体ウエーハ(10)を吸着して保持する吸着面(2)と、
前記筐体(60)内に設けられ前記吸着面(2)に吸着保持された半導体ウエーハ(10)の研削面(11)に対して砥石面(31)が対面して回転自在に軸支された砥石(30)と、を備えた半導体ウエーハ研削盤において、
前記筐体(60)内において研削時の砥石高さ位置で、前記砥石(30)の外周に沿って円弧状の切欠部(72),(82)が設けられ、
前記切欠部(72),(82)を通して前記砥石(30)が前記研削面(11)に対面摺接可能とし、前記半導体ウエーハ(10)の研削面(11)の露出部分を覆う開閉自在の防塵カバー(70),(80)を備え、
前記防塵カバー(70),(80)を閉じた状態で研削室(100)が形成されることを特徴とする半導体ウエーハ研削盤。
A housing (60) having a loading port (62) for the semiconductor wafer (10);
An adsorption surface (2) provided in the housing (60) for adsorbing and holding the loaded semiconductor wafer (10);
A grindstone surface (31) faces a ground surface (11) of a semiconductor wafer (10) provided in the housing (60) and held by suction on the suction surface (2) and is rotatably supported. And a grinding wheel (30),
In the housing (60), arc-shaped notches (72) and (82) are provided along the outer circumference of the grinding wheel (30) at the grinding wheel height position during grinding,
The grindstone (30) can be brought into sliding contact with the grinding surface (11) through the notches (72) and (82), and can be opened and closed to cover an exposed portion of the grinding surface (11) of the semiconductor wafer (10). Equipped with dustproof covers (70) and (80)
A semiconductor wafer grinding machine wherein a grinding chamber (100) is formed with the dustproof covers (70) and (80) closed.
前記研削室(100)内において、少なくとも前記研削面(11)に対して洗浄効果を付与し得る洗浄媒体となる流体を噴出する噴射ノズル(44)を備えたことを特徴とする請求項1に記載の半導体ウエーハ研削盤。2. The nozzle according to claim 1, further comprising: a jet nozzle for jetting a fluid serving as a cleaning medium capable of imparting a cleaning effect to at least the grinding surface in the grinding chamber. The semiconductor wafer grinding machine as described in the above. 前記防塵カバー(70),(80)には、前記半導体ウエーハ(10)に対峙する面に前記噴射ノズル(75),(85)を備えたことを特徴とする請求項2に記載の半導体ウエーハ研削盤。The semiconductor wafer according to claim 2, wherein the dust-proof covers (70), (80) are provided with the spray nozzles (75), (85) on a surface facing the semiconductor wafer (10). Grinder. 前記防塵カバー(70),(80)には、前記吸着面(2)に前記半導体ウエーハ(10)を着脱交換可能とする開口面積を有して前記研削面(11)を露出するヒンジ開閉式またはスライド式の開閉機構を備えたことを特徴とする請求項1ないし請求項3の何れか1項に記載の半導体ウエーハ研削盤。The dustproof covers (70) and (80) have a hinge-opening / closing type in which the suction surface (2) has an opening area that allows the semiconductor wafer (10) to be attached and detached and exchanged to expose the grinding surface (11). 4. The semiconductor wafer grinding machine according to claim 1, further comprising a slide-type opening / closing mechanism.
JP2002252689A 2002-08-30 2002-08-30 Semiconductor wafer grinder Pending JP2004090128A (en)

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JP2020026012A (en) * 2018-08-15 2020-02-20 株式会社ディスコ Grinding device
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KR20230020758A (en) * 2021-08-04 2023-02-13 (주)아이엔티에스 semiconductor package chip cleaning device
JP7636120B2 (en) 2021-07-27 2025-02-26 株式会社ディスコ Processing Equipment

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JP2006334744A (en) * 2005-06-03 2006-12-14 Fuji Electric Device Technology Co Ltd Polishing apparatus and polishing method
JP2009255247A (en) * 2008-04-18 2009-11-05 Disco Abrasive Syst Ltd Grinding device and wafer grinding method
JP2014050899A (en) * 2012-09-05 2014-03-20 Disco Abrasive Syst Ltd Working apparatus
JP2014050932A (en) * 2012-09-07 2014-03-20 Disco Abrasive Syst Ltd Grinding device
CN107088799A (en) * 2017-05-10 2017-08-25 厦门市音绿洁源环保科技有限公司 A kind of Decorative Building Stone sanding apparatus of dustless environment protecting
JP2020026012A (en) * 2018-08-15 2020-02-20 株式会社ディスコ Grinding device
KR20220040984A (en) * 2020-09-24 2022-03-31 가부시기가이샤 디스코 Processing apparatus
JP7544547B2 (en) 2020-09-24 2024-09-03 株式会社ディスコ Processing Equipment
KR102814217B1 (en) 2020-09-24 2025-05-28 가부시기가이샤 디스코 Processing apparatus
JP7636120B2 (en) 2021-07-27 2025-02-26 株式会社ディスコ Processing Equipment
KR20230020758A (en) * 2021-08-04 2023-02-13 (주)아이엔티에스 semiconductor package chip cleaning device
KR102602309B1 (en) * 2021-08-04 2023-11-16 (주)아이엔티에스 semiconductor package chip cleaning device

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