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CN102468207A - Wafer support plate and method of using wafer support plate - Google Patents

Wafer support plate and method of using wafer support plate Download PDF

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Publication number
CN102468207A
CN102468207A CN2011103292794A CN201110329279A CN102468207A CN 102468207 A CN102468207 A CN 102468207A CN 2011103292794 A CN2011103292794 A CN 2011103292794A CN 201110329279 A CN201110329279 A CN 201110329279A CN 102468207 A CN102468207 A CN 102468207A
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wafer
cutting
supporting plate
support plate
scratch diskette
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CN102468207B (en
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关家一马
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Disco Corp
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Disco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention provides a wafer supporting plate capable of half-cutting a wafer without using a cutting tape and a use method of the wafer supporting plate. A wafer supporting plate for supporting and transporting a wafer, the wafer supporting plate comprising: a wafer support part formed by a circular concave part and used for receiving and supporting the wafer; a plurality of through holes formed at the bottom of the circular recess; and a frame portion which surrounds the wafer support portion, and on which a carrying unit of the processing apparatus acts.

Description

晶片支承板及晶片支承板的使用方法Wafer support plate and method of using the wafer support plate

技术领域 technical field

本发明涉及用于支承并运送晶片的晶片支承板及该晶片支承板的使用方法。The present invention relates to a wafer support plate for supporting and transporting wafers and a method of using the wafer support plate.

背景技术 Background technique

例如，在半导体器件制造工艺中，在通过以格子状形成于大致圆板形状的半导体晶片的表面的切割道(分割预定线)而划分的各个区域分别形成IC、LSI等器件，沿着分割预定线分割形成有该器件的各个区域，从而制造出各个器件。For example, in a semiconductor device manufacturing process, devices such as ICs and LSIs are formed in each area divided by dicing lines (planning lines) formed in a grid on the surface of a substantially disc-shaped semiconductor wafer in a grid pattern, and devices such as ICs and LSIs are formed along Individual regions of the device are formed by wire dicing, thereby fabricating individual devices.

作为将半导体晶片分割为各个器件的分割装置，一般使用被称为切割装置的切削装置，该切削装置通过具有非常薄的切削刃的切削刀而沿着分割预定线切削半导体晶片，从而将晶片分割为各个器件。这样被分割的器件被包装而广泛利用于便携电话或个人电脑等的电气设备。As a dividing device for dividing a semiconductor wafer into individual devices, a cutting device called a dicing device is generally used, which cuts the semiconductor wafer along the planned dividing line with a cutting blade having a very thin cutting edge, thereby dividing the wafer. for each device. Such divided devices are packaged and widely used in electrical equipment such as mobile phones and personal computers.

近年来，人们要求便携电话或个人电脑等电气设备的轻量化、小型化，要求更薄的器件。作为将晶片分割为更薄的器件的技术，开发了所谓叫作先切割法的分割技术，并得以实用(例如，参照日本特开平11-40520号公报)。In recent years, weight reduction and miniaturization of electrical equipment such as mobile phones and personal computers have been demanded, and thinner devices have been demanded. As a technique for dividing a wafer into thinner devices, a so-called dicing-first method has been developed and put to practical use (see, for example, Japanese Patent Application Laid-Open No. 11-40520).

该先切割法是沿着分割预定线从半导体晶片的表面形成预定深度(相当于器件的精加工厚度的深度)的分割槽，然后磨削在表面形成有分割槽的半导体晶片的背面而使得分割槽在该背面外露，从而将晶片分割为各个器件的技术，该技术能够将器件的厚度加工为50μm以下。The dicing method is to form a dividing groove of a predetermined depth (the depth corresponding to the finishing thickness of the device) from the surface of the semiconductor wafer along the dividing planned line, and then grind the back surface of the semiconductor wafer with the dividing groove formed on the surface to make the division. The technology of dividing the wafer into individual devices by exposing grooves on the back surface can process devices with a thickness of 50 μm or less.

在先切割法中，将晶片不完全切断而进行半切断，因此无需使用完全切割时使用的切割带，而为了节约切割带，本申请人开发了用于实施半切断的专用切割装置(参照日本特开2004-235622号公报)。In the first dicing method, the wafer is not completely cut off but half-cut, so there is no need to use the dicing tape used when completely cutting, and in order to save the dicing tape, the applicant has developed a special cutting device for implementing half-cutting (refer to Japan Japanese Patent Laid-Open No. 2004-235622).

专利文献1日本特开平11-40520号公报Patent Document 1 Japanese Patent Application Laid-Open No. 11-40520

专利文献2日本特开2004-235622号公报Patent Document 2 Japanese Patent Application Laid-Open No. 2004-235622

专利文献3特开2005-166969号公报Patent Document 3 JP-A-2005-166969

但是，专利文献2中所公开的半切断专用的切削装置没有广泛的应用性，在不实施半切断的情况下运行被中断，存在生产性不好的问题。另外，如果通过切割带，由环状框架支承晶片，则虽然可以使用一般的切割带来实施半切断，但由于需要使用切割带，因此存在不够经济的问题。However, the cutting device exclusively for half-cutting disclosed in Patent Document 2 is not widely applicable, and the operation is interrupted when the half-cutting is not performed, resulting in poor productivity. In addition, if the wafer is supported by the ring frame with a dicing tape, a general dicing tape can be used for half-cutting, but since a dicing tape is required, there is a problem that it is not economical.

发明内容 Contents of the invention

本发明是鉴于上述问题点而研发的，本发明的目的在于提供一种将晶片半切断时无需使用切断带的晶片支承板及该晶片支承板的使用方法。The present invention was developed in view of the above-mentioned problems, and an object of the present invention is to provide a wafer support plate that does not require a cutting tape when cutting a wafer in half, and a method of using the wafer support plate.

根据技术方案一的发明，提供一种用于支承并运送晶片的晶片支承板，该晶片支承板的特征在于，包括：晶片支承部，其由圆形凹部形成，收纳晶片而进行支承；多个通孔，其形成于该圆形凹部的底部；以及框架部，其围绕该晶片支承部，且加工装置的运送单元作用于该框架部。According to the invention of technical solution 1, there is provided a wafer support plate for supporting and transporting a wafer, which is characterized in that it includes: a wafer support portion formed by a circular concave portion for receiving and supporting a wafer; a through hole formed at the bottom of the circular recess; and a frame portion surrounding the wafer support portion, and a conveying unit of a processing apparatus acts on the frame portion.

优选为，在圆形凹部的底部配置有防滑片。Preferably, an anti-slip sheet is arranged at the bottom of the circular recess.

根据技术方案三的发明，提供一种在加工装置中的权利要求1或2所述的晶片支承板的使用方法，其中，该加工装置包括：工作盘，其具有保持面，在该保持面上作用有保持晶片的吸引力；加工单元，其对保持在该工作盘上的晶片实施预定的加工；第1运送单元，其向该工作盘运入晶片；以及第2运送单元，其从该工作盘运出晶片，该晶片支承板的使用方法的特征在于，包括：晶片运入步骤，该第1运送单元对收纳有晶片的该晶片支承板的该框架部进行作用，将晶片运入该工作盘的保持面；保持步骤，向该工作盘的保持面作用吸引力，通过形成于该圆形凹部的底部的该多个通孔而吸引并保持晶片；加工步骤，通过该加工单元对晶片实施预定的加工；晶片运出步骤，使从该工作盘运出晶片的该第2运送单元作用于该晶片支承板的该框架部，并且解除作用于该工作盘的保持面的吸引力，从该工作盘运出晶片。According to the invention of technical solution 3, there is provided a method of using the wafer support plate according to claim 1 or 2 in a processing device, wherein the processing device comprises: a work plate having a holding surface, and on the holding surface It functions as an attractive force for holding wafers; a processing unit that performs predetermined processing on wafers held on the work tray; a first transport unit that transports wafers to the work tray; and a second transport unit that transfers the wafers from the work tray The method of using the wafer support plate for transporting wafers out of a tray is characterized in that it includes: a wafer transporting step, wherein the first transport unit acts on the frame portion of the wafer support plate in which the wafers are accommodated, and transports the wafers into the work The holding surface of the disk; the holding step, the suction force is applied to the holding surface of the working disk, and the wafer is attracted and held through the plurality of through holes formed in the bottom of the circular concave portion; the processing step is performed on the wafer by the processing unit Predetermined processing: Wafer carrying out step, make the second carrying unit that carries out the wafer from the work disk act on the frame portion of the wafer support plate, and release the suction force acting on the holding surface of the work disk, from the The work tray ships out the wafers.

优选为，将晶片支承板的圆形凹部的深度设定得比从形成于晶片的切削槽的底部到晶片的背面的距离浅。Preferably, the depth of the circular concave portion of the wafer support plate is set to be shallower than the distance from the bottom of the cutting groove formed in the wafer to the back surface of the wafer.

通过由本发明的晶片支承板来支承晶片，即使不使用实施半切断的专用的切削装置，也无需使用切削带且能够使用一般的切削装置而对晶片进行半切断，因此比较经济。并且，本发明的晶片支承板能够重复使用，因此比较经济。By supporting the wafer with the wafer support plate of the present invention, even without using a dedicated cutting device for half-cutting, the wafer can be half-cut using a general cutting device without using a cutting tape, and thus it is economical. Furthermore, the wafer support plate of the present invention is economical because it can be used repeatedly.

进一步，在向晶片的表面照射对晶片具有吸收性的波长的激光束而实施消融加工来形成分割槽的激光加工装置及向晶片的内部聚光并照射对晶片具有透过性的波长的激光束而在晶片内部形成改质层的激光加工装置中也能够使用本发明的晶片支承板，能够避免切削带的使用，因此比较经济。Furthermore, a laser processing apparatus that irradiates a laser beam with an absorbing wavelength to the surface of the wafer to perform ablation processing to form the dividing grooves, and condenses light into the inside of the wafer and irradiates a laser beam with a transparent wavelength to the wafer Furthermore, the wafer support plate of the present invention can also be used in a laser processing apparatus for forming a modified layer inside a wafer, and the use of a cutting tape can be avoided, so it is economical.

附图说明 Description of drawings

图1是切削装置的外观立体图。Fig. 1 is an external perspective view of a cutting device.

图2是表示由本发明实施方式的晶片支承板来支承晶片的样子的分解立体图。Fig. 2 is an exploded perspective view showing how a wafer is supported by a wafer support plate according to an embodiment of the present invention.

图3是由晶片支承板来支承晶片的状态下的立体图。Fig. 3 is a perspective view of a state where a wafer is supported by a wafer support plate.

图4是晶片支承板的纵剖面图。Fig. 4 is a longitudinal sectional view of a wafer support plate.

图5是表示对由晶片支承板支承的晶片进行切削的样子的立体图。Fig. 5 is a perspective view showing a state of cutting a wafer supported by a wafer support plate.

符号说明Symbol Description

2  切削装置2 cutting device

18  工作盘18 working discs

24  切削单元24 cutting unit

28  切削刀28 cutter

30  晶片支承板30 wafer support plate

32  圆形凹部(晶片支承部)32 Circular concave part (wafer support part)

33  框架部33 Frame Department

34  通孔34 through holes

具体实施方式 Detailed ways

下面，参照附图来详细说明本发明的实施方式。参照图1，该图中表示了能够使用本发明的晶片支承板而将晶片半切断的切削装置2的外观立体图。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to FIG. 1 , there is shown an external perspective view of a cutting device 2 capable of half-cutting a wafer by using the wafer support plate of the present invention.

在切削装置2的前面侧设有用于由操作员输入加工条件等对装置的指示的操作单元4。在装置上部设有CRT等显示单元6，在该显示单元6上显示对操作员的导向画面和通过后述的摄像单元来摄像的图像。On the front side of the cutting device 2 is provided an operation unit 4 for an operator to input instructions to the device such as machining conditions. A display unit 6 such as a CRT is provided on the upper part of the device, and a guidance screen for the operator and an image captured by an imaging unit described later are displayed on the display unit 6 .

如图2及图3所示，在作为切割对象的器件晶片W的表面，以正交的方式形成有第1切割道(分割预定线)S1和第2切割道(分割预定线)S2，多个器件D通过第1切割道S1和第2切割道S2被划分而形成于晶片W上。11是作为表示硅晶片W的结晶方位的标记的切口。As shown in FIGS. 2 and 3 , on the surface of the device wafer W to be diced, first scribe lines (lines to be divided) S1 and second scribe lines (lines to be divided) S2 are formed in an orthogonal manner. Each device D is formed on the wafer W by being divided by the first scribe line S1 and the second scribe line S2 . 11 is a notch as a mark showing the crystal orientation of the silicon wafer W.

参照图2，该图中表示了由本发明实施方式的晶片支承板30来支承晶片W的样子的分解立体图。晶片支承板30具有圆形凹部32，该圆形凹部32具有比晶片W的直径稍大的直径，在圆形凹部32的底部形成有多个通孔34。另外，面对圆形凹部32而形成有与晶片W的切口11嵌合的突起31。Referring to FIG. 2 , there is shown an exploded perspective view of a state in which a wafer W is supported by a wafer support plate 30 according to an embodiment of the present invention. The wafer support plate 30 has a circular recess 32 having a diameter slightly larger than that of the wafer W, and a plurality of through holes 34 are formed at the bottom of the circular recess 32 . In addition, a protrusion 31 that fits into the notch 11 of the wafer W is formed facing the circular recess 32 .

晶片支承板30具有围绕圆形凹部32的框架部33，切削装置2的运送单元作用于该框架部33而运送晶片支承板30。晶片支承板30优选由树脂形成，但也可以由铝等金属形成。The wafer support plate 30 has a frame portion 33 surrounding the circular recess 32 , and the transport unit of the cutting device 2 acts on the frame portion 33 to transport the wafer support plate 30 . The wafer support plate 30 is preferably formed of resin, but may also be formed of metal such as aluminum.

晶片支承板30用于对晶片W进行半切断，因此圆形凹部32的深度被设定为比从形成于晶片W的切削槽的底部到晶片W的背面的距离稍浅的深度。例如，如果晶片W的厚度为700μm，切削槽的深度为100μm，则圆形凹部32的深度比600μm浅，例如被设定为500μm。Wafer support plate 30 is used for half-cutting wafer W, so the depth of circular recess 32 is set to be slightly shallower than the distance from the bottom of the cutting groove formed on wafer W to the back surface of wafer W. For example, if the thickness of the wafer W is 700 μm and the depth of the cutting groove is 100 μm, the depth of the circular recess 32 is set to be shallower than 600 μm, for example, 500 μm.

图3表示将圆形凹部32作为支承晶片W的晶片支承部，使得晶片支承板30的突起31与晶片W的切口11嵌合，将晶片W插入圆形凹部32中的状态下的立体图。优选，如图4的纵剖面图所示，在支承晶片的圆形凹部32的底部配置有防滑片36。3 is a perspective view showing a state in which circular recess 32 is used as a wafer support for wafer W, projection 31 of wafer support plate 30 is fitted into notch 11 of wafer W, and wafer W is inserted into circular recess 32 . Preferably, as shown in the longitudinal sectional view of FIG. 4 , an anti-slip sheet 36 is disposed on the bottom of the circular recess 32 for supporting the wafer.

在防滑片36上也形成有与通孔34连通的多个通孔37。通过在作为晶片支承部起作用的圆形凹部32的底部设置防滑片36，从而防止由晶片支承板30来支承晶片W而进行运送的过程中晶片W从圆形凹部32飞出。A plurality of through holes 37 communicating with the through holes 34 are also formed on the anti-slip sheet 36 . By providing the anti-slip sheet 36 at the bottom of the circular recess 32 functioning as a wafer support portion, the wafer W is prevented from flying out of the circular recess 32 during transport while the wafer W is supported by the wafer support plate 30 .

再参照图1，在晶片盒8中收纳有多枚由晶片支承板30支承的晶片W。晶片盒8载置于能够上下移动的盒式升降机9上。Referring again to FIG. 1 , a plurality of wafers W supported by a wafer support plate 30 are accommodated in the wafer cassette 8 . The wafer cassette 8 is placed on a cassette elevator 9 capable of moving up and down.

在晶片盒8的后方配置有运出入单元10，该运出入单元10从晶片盒8运出切削前的晶片W，并且将切削后的晶片运入晶片盒8。Arranged behind the wafer cassette 8 is a carry-in/unload unit 10 for carrying out the uncut wafer W from the wafer cassette 8 and carrying the cut wafers into the wafer cassette 8 .

在晶片盒8与运出入单元10之间设有暂时载置运出入对象的晶片W的区域即临时放置区域12，在临时放置区域12中配置有将晶片W对位在一定的位置上的对位单元14。Between the wafer cassette 8 and the carry-in/out unit 10, a temporary storage area 12 is provided, which is an area where wafers W to be transported in and out are temporarily placed. bit cell 14.

在临时放置区域12的附近配置有运送单元16，该运送单元16具有旋转臂，该旋转臂吸附支承了晶片W的晶片支承板30的框架部33而进行运送，运出到临时放置区域12的晶片W被运送单元16吸附而运送到工作盘18上，在该工作盘18的保持面上被吸引，并且通过由多个夹板19来固定晶片支承板30的框架部33而保持在工作盘18上。In the vicinity of the temporary storage area 12, a transport unit 16 is arranged. The transport unit 16 has a rotating arm that absorbs and supports the frame portion 33 of the wafer support plate 30 to transport the wafer W, and carries it out to the temporary storage area 12. The wafer W is sucked by the transport unit 16 and transported to the work table 18 , is attracted to the holding surface of the work table 18 , and is held on the work table 18 by fixing the frame portion 33 of the wafer support plate 30 with a plurality of clamps 19 . superior.

工作盘18构成为能够旋转且能够在X轴方向上进行往返运动，在工作盘18的X轴方向的移动路径的上方配置有检测晶片W的应切削的切割道的对准单元20。The table 18 is rotatable and reciprocated in the X-axis direction, and an alignment unit 20 for detecting a scribe line to be cut on the wafer W is arranged above the movement path of the table 18 in the X-axis direction.

对准单元20具有对晶片W的表面进行摄像的摄像单元22，能够根据通过摄像取得的图像，通过图案匹配等处理而检测应切削的切割道。由摄像单元22取得的图像被显示在显示单元6上。The alignment unit 20 has an imaging unit 22 for imaging the surface of the wafer W, and can detect a scribe line to be cut by processing such as pattern matching based on the image acquired by the imaging. Images captured by the imaging unit 22 are displayed on the display unit 6 .

在对准单元20的左侧配置有切削单元24，该切削单元24对保持在工作盘18的晶片W实施切削加工。切削单元24与对准单元20一体构成，两者联动而在Y轴方向及Z轴方向上移动。On the left side of the alignment unit 20 is arranged a cutting unit 24 that performs cutting processing on the wafer W held on the work table 18 . The cutting unit 24 is integrally formed with the alignment unit 20, and both move in the Y-axis direction and the Z-axis direction in conjunction with each other.

切削单元24在能够旋转的主轴26的前端安装切削刀28而构成，且能够在Y轴方向及Z轴方向上移动。切削刀28位于摄像单元22的X轴方向的延长线上。The cutting unit 24 is configured by attaching a cutting blade 28 to the tip of a rotatable main shaft 26, and is movable in the Y-axis direction and the Z-axis direction. The cutting blade 28 is located on an extension line of the imaging unit 22 in the X-axis direction.

完成切削的晶片W通过运送单元25从工作盘18运出而被运送到旋转洗涤装置27，由旋转洗涤装置27进行自旋洗涤及自旋干燥。The chipped wafer W is transported from the work table 18 by the transport unit 25 and transported to the spin washing device 27 , where spin washing and spin drying are performed by the spin washing device 27 .

下面，对如上结构的本发明实施方式的晶片支承板30的使用方法进行说明。晶片支承板的使用方法包括如下步骤：晶片运入步骤，运入晶片W的运送单元16作用于收纳并支承晶片W的晶片支承板30的框架部33，将晶片W运入工作盘18的保持面；以及保持步骤，将吸引力作用于工作盘18的保持面，通过形成于晶片保持板30的圆形凹部32的底部的多个通孔34而吸引并保持晶片W。Next, a method of using the wafer support plate 30 according to the embodiment of the present invention configured as above will be described. The using method of the wafer support plate comprises the following steps: a wafer transport step, the transport unit 16 for transporting the wafer W acts on the frame portion 33 of the wafer support plate 30 for receiving and supporting the wafer W, and the wafer W is transported into the holder of the work plate 18. surface; and a holding step, applying an attractive force to the holding surface of the work plate 18 to attract and hold the wafer W through a plurality of through holes 34 formed in the bottom of the circular recess 32 of the wafer holding plate 30 .

如上所述，通过晶片支承板30而在工作盘18吸引并保持晶片W之后，由切削单元(加工单元)24实施对晶片W进行切削加工的切削步骤。关于该切削步骤，将参照图5来进行说明。As described above, after the wafer W is suctioned and held by the table 18 by the wafer support plate 30 , the cutting step of cutting the wafer W is performed by the cutting unit (processing unit) 24 . This cutting step will be described with reference to FIG. 5 .

参照图5，该图中表示了通过切削单元24沿着切割道切削被晶片支承板30支承的晶片W的样子的立体图。25是切削单元24的主轴壳体，在主轴壳体25中能够旋转地收纳有主轴26，该主轴26通过未图示的伺服马达来旋转驱动。切削刀28是电铸刀，在其外周部具有在镍母材中分散钻石砥粒而成的切削刃28a。Referring to FIG. 5 , there is shown a perspective view of a state in which a wafer W supported by a wafer support plate 30 is cut along a dicing line by the cutting unit 24 . Reference numeral 25 denotes a spindle housing of the cutting unit 24, and a spindle 26 is rotatably housed in the spindle housing 25, and the spindle 26 is rotationally driven by a servo motor not shown. The cutting blade 28 is an electroformed blade, and has a cutting edge 28a in which diamond abrasive grains are dispersed in a nickel base material on its outer peripheral portion.

40是覆盖切削刀28的刀盖，安装有沿着切削刀28的侧面延伸的未图示的切削水喷嘴和将切削水喷射到切削刀28的切削刃28a与晶片W之间的接触区域的切削水喷射喷嘴46。40 is a knife cover covering the cutting blade 28, and a cutting water nozzle (not shown) extending along the side surface of the cutting blade 28 and a nozzle for spraying cutting water to the contact area between the cutting edge 28a of the cutting blade 28 and the wafer W are installed. Cutting water jet nozzle 46 .

来自切削水供给部44的切削水通过管42而供给到未图示的切削水喷嘴，通过管48而供给到切削水喷射喷嘴46。切削水在切削水供给部44中例如被加压为约0.3MPa，以每分钟1.6～2.0升的流量从切削水喷射喷嘴46喷射。The cutting water from the cutting water supply unit 44 is supplied to the cutting water nozzle (not shown) through the pipe 42 and supplied to the cutting water injection nozzle 46 through the pipe 48 . The cutting water is pressurized to, for example, about 0.3 MPa in the cutting water supply unit 44 , and is injected from the cutting water injection nozzle 46 at a flow rate of 1.6 to 2.0 liters per minute.

50是装卸盖，通过螺钉52能够装卸地安装在刀盖40上。装卸盖50具有沿着切削刀28的侧面延伸的切削水喷嘴54，切削水通过管56而供给到切削水喷嘴54。50 is a detachable cover, which is detachably mounted on the knife cover 40 by screws 52 . The detachable cover 50 has a cutting water nozzle 54 extending along the side of the cutting blade 28 , and cutting water is supplied to the cutting water nozzle 54 through a pipe 56 .

60是内置有检测切削刀28的切削刃28a的缺口或磨耗的刀片传感器的刀片检测块，通过螺钉62能够装卸地安装在刀盖40上。刀片检测块60具有调整刀片传感器的位置的调整螺钉64。Reference numeral 60 denotes a blade detection block having a built-in blade sensor for detecting chipping or wear of the cutting edge 28 a of the cutting blade 28 , and is detachably attached to the blade cover 40 by screws 62 . The blade detection block 60 has an adjustment screw 64 for adjusting the position of the blade sensor.

在沿着切割道S1、S2切削被晶片支承板30支承的晶片W之前，通过周知的图案匹配等手法，实施应切削的切割道S1、S2与切割刀28之间的对准。Before cutting the wafer W supported by the wafer support plate 30 along the scribe streets S1 , S2 , alignment between the scribe streets S1 , S2 to be cut and the dicing blade 28 is performed by known pattern matching or the like.

在实施对准之后，进行第1切割道S1与切削刀28之间的对位，将工作盘18在图5中由箭头X所示的X轴方向上移动，并且在将切削刀28向箭头A的方向高速旋转(例如30000rpm)的同时，使得切削单元24下降，在对位后的第1切割道S1上形成预定的深度(与器件的精加工厚度相当的深度)的分割槽。After implementing the alignment, carry out the alignment between the first cutting road S1 and the cutting blade 28, move the work disk 18 in the X-axis direction shown by the arrow X in FIG. 5, and move the cutting blade 28 to the arrow While rotating at a high speed (for example, 30,000 rpm) in the direction A, the cutting unit 24 is lowered to form a dividing groove with a predetermined depth (deep equivalent to the finished thickness of the device) on the aligned first scribe line S1.

该分割槽的深度形成为不到达晶片支承板30的框架部33的上面的深度，例如为100μm。如上所述，通过由切削刀28对晶片W进行半切断，从而在不损坏晶片支承板30的情况下能够形成预定深度的分割槽。The depth of the dividing groove is formed so as not to reach the upper surface of the frame portion 33 of the wafer support plate 30 , for example, 100 μm. As described above, by half-cutting the wafer W with the cutting blade 28 , it is possible to form a dividing groove having a predetermined depth without damaging the wafer support plate 30 .

将切削单元24按照存储于存储器的切割道间距在Y轴方向上分度送出的同时进行切削，从而将第1切割道S1全部半切断，形成相同的分割槽。另外，如果将工作盘18旋转90度之后，进行与上述相同的切削，则将第2切割道S2全部半切断，形成相同的分割槽。The cutting unit 24 performs cutting while indexing and feeding in the Y-axis direction according to the scribing line pitch stored in the memory, thereby half-cutting all the first scribing lines S1 to form the same dividing grooves. In addition, if the same cutting as above is performed after the table 18 is rotated by 90 degrees, all the second scribe lines S2 are cut in half to form the same dividing grooves.

这样，在实施将所有切割道S1、S2半切断的加工步骤之后，解除工作盘18的吸引力，将运送单元25的吸附部作用于晶片支承板30的框架部33而吸引并保持晶片支承板30，运送至旋转洗涤装置27，通过旋转洗涤装置27对晶片W进行自旋洗涤及自旋干燥。In this way, after the processing step of half-cutting all the scribe lines S1 and S2, the suction force of the work table 18 is released, and the suction portion of the transport unit 25 acts on the frame portion 33 of the wafer support plate 30 to attract and hold the wafer support plate. 30 , transported to the spin cleaning device 27 , and the wafer W is spin cleaned and spin dried by the spin cleaning device 27 .

接着，在晶片W的表面粘贴保护带之后，通过使用磨削装置的背面磨削步骤而磨削形成有分割槽的晶片的背面，使得分割槽外露在该背面，从而能够将晶片W分割为各个器件D。Next, after the protective tape is pasted on the surface of the wafer W, the back surface of the wafer on which the dividing grooves are formed is ground by a back grinding step using a grinding apparatus, so that the dividing grooves are exposed on the back surface, and the wafer W can be divided into individual pieces. Device D.

根据上述的本发明的实施方式，通过由晶片支承板30来支承晶片W，从而即使不使用进行半切断的专用的切削装置，而使用一般的切割装置且不使用切割带，也能够对晶片W进行半切断，因此非常经济。并且，晶片支承板30能够重复使用，因此比较经济。According to the embodiment of the present invention described above, by supporting the wafer W by the wafer support plate 30, it is possible to cut the wafer W by using a general dicing device without using a dicing tape without using a dedicated cutting device for half-cutting. Performs half cuts and is therefore very economical. In addition, the wafer support plate 30 is economical because it can be used repeatedly.

在上述的实施方式中对将本发明的晶片支承板30适用于切削装置2的例子进行了说明，但本发明的晶片支承板30不限于这样的使用方法，本发明同样适用于向晶片W的表面照射对晶片W具有吸收性的波长的激光束而实施消融加工来形成分割槽的激光加工装置及向晶片W的内部聚光并照射对晶片W具有透过性的波长的激光束而在晶片内部形成改质层的激光加工装置中。In the above-mentioned embodiment, an example in which the wafer support plate 30 of the present invention is applied to the cutting device 2 has been described, but the wafer support plate 30 of the present invention is not limited to such a use method, and the present invention is also applicable to the application of the wafer W to the wafer W. A laser processing apparatus that irradiates a laser beam with an absorbing wavelength on the surface of the wafer W to perform ablation processing to form division grooves; In a laser processing device in which a modified layer is formed.

Claims (5)

1. wafer supporting plate that is used to support and transport wafer is characterized in that comprising:
Wafer supporting portion, it is formed by circular depressions, takes in wafer and supports;
A plurality of through holes, it is formed at the bottom of this circular depressions; And
Frame section, it is around this wafer supporting portion, and the delivery unit of processing unit (plant) acts on this frame section.
2. wafer supporting plate according to claim 1 is characterized in that,
Dispose anti-slide plate in the bottom of this circular depressions.
3. the claim 1 in the processing unit (plant) or the method for using of 2 described wafer supporting plates, this processing unit (plant) comprises: scratch diskette, it has maintenance face, and effect has the attraction that keeps wafer on this maintenance face; Machining cell, it implements predetermined processing to the wafer that remains on this scratch diskette; The 1st delivery unit, it is transported into wafer to this scratch diskette; And the 2nd delivery unit, it transports wafer from this scratch diskette,
The method for using of this wafer supporting plate is characterised in that and comprises:
Wafer is transported into step, and the 1st delivery unit acts on this frame section of this wafer supporting plate of taking in wafer, wafer is transported into the maintenance face of this scratch diskette;
Keep step, to the maintenance face effect attraction of this scratch diskette, these a plurality of through holes of the bottom through being formed at this circular depressions attract and keep wafer;
Procedure of processing is implemented predetermined processing through this machining cell to wafer; And
Wafer transports step, makes the 2nd delivery unit that transports wafer from this scratch diskette act on this frame section of this wafer supporting plate, and removes the attraction of the maintenance face that acts on this scratch diskette, transports wafer from this scratch diskette.
4. the method for using of wafer supporting plate according to claim 3 is characterized in that,
This machining cell is made up of cutting unit, and this cutting unit has the bite of wafer being implemented cut,
In this procedure of processing, on by this wafer supporting plate wafer supported, form cutting slot.
5. the method for using of wafer supporting plate according to claim 4 is characterized in that,
The depth ratio of this circular depressions of this wafer supporting plate is shallow slightly to the distance at the back side of wafer from the bottom of the cutting slot that is formed at wafer.
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