JP2003101194A - Production method for printed wiring board - Google Patents
Production method for printed wiring boardInfo
- Publication number
- JP2003101194A JP2003101194A JP2001289246A JP2001289246A JP2003101194A JP 2003101194 A JP2003101194 A JP 2003101194A JP 2001289246 A JP2001289246 A JP 2001289246A JP 2001289246 A JP2001289246 A JP 2001289246A JP 2003101194 A JP2003101194 A JP 2003101194A
- Authority
- JP
- Japan
- Prior art keywords
- thin metal
- metal layer
- substrate
- wiring
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 229910052802 copper Inorganic materials 0.000 claims abstract description 20
- 239000010949 copper Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000011889 copper foil Substances 0.000 claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 11
- 229920005989 resin Polymers 0.000 claims abstract description 11
- 239000000654 additive Substances 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 5
- 230000000996 additive effect Effects 0.000 claims abstract description 3
- 239000011888 foil Substances 0.000 claims abstract description 3
- 238000009713 electroplating Methods 0.000 claims description 15
- 238000010276 construction Methods 0.000 claims 1
- 238000007747 plating Methods 0.000 abstract description 28
- 238000010030 laminating Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 20
- 239000000243 solution Substances 0.000 description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 3
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 101100116283 Arabidopsis thaliana DD11 gene Proteins 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- -1 Ni or Ti Chemical compound 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、配線精度の高い微
細配線を有する配線板の製造方法に関する。
【０００２】
【従来の技術】近年、電子機器の小型，軽量，高速化の
要求から、プリント配線板の高密度化が進んでいる。従
来、主に粗化付銅箔をエッチングすることで配線を形成
するプリント配線板は、サイドエッチングの影響で配線
の微細化が困難であり、基板の高密度化には限界があっ
た。そこで近年は、パターン電気めっきを用いたセミア
ディティブ法であるＦＡＭ工法によるプリント配線板の
製造方法が注目されている。このＦＡＭ工法は、特許番
号第３１４２２７０号にあるように、薄手銅箔層にパタ
ーン電気めっきレジストを形成した後、パターン電気め
っきを施し、めっきレジストを除去後パターン部以外の
薄手銅箔層をエッチング除去する手法であるが、この時
のエッチングにより既に形成した微細配線もエッチング
し、配線精度を低下させるなどの問題があった。
【０００３】
【発明が解決しようとする課題】本発明は、ＦＡＭ工法
において絶縁基材表面にＮｉ，Ｔｉなど銅以外の薄手金
属層を付加することにより、配線形成後の薄手金属層の
エッチング時に、選択的に銅以外の金属をエッチングす
る液を使用することにより、既に形成した微細配線のエ
ッチングを防止することを特徴とし、従来技術の問題点
を解決しようとするものである。
【０００４】
【課題を解決するための手段】本発明は、次のものに関
する。
（１）絶縁基板表面に薄手の金属層を付加し、電気めっ
きにより配線パターンを形成後、基板表面の薄手金属層
を除去して微細配線を形成するセミアデイテイブ（ＦＡ
Ｍ：Ｆｏｉｌ Ａｄｄｉｔｉｖｅ Ｍｅｔｈｏｄ）工法
において、あらかじめ、表面が平滑な銅箔の片面に、厚
み５μｍ以下の粗化したＮｉまたはＴｉなど銅以外の薄
手金属層を付加し、薄手金属面を基板に樹脂を介してラ
ミネート後、銅箔を除去することにより基板表面に厚み
５μｍ以下の粗化した薄手金属層を付加し、パターン電
気めっきレジストを形成した後にパターン電気めっきを
行いレジストを除去し、パターン部以外の薄手金属層を
エッチング除去する工程を少なくとも有することを特徴
とするプリント配線板の製造方法。
【０００５】
【発明の実施の形態】本発明のＦＡＭ工法配線板の製造
は、
Ａ．あらかじめ、表面が平滑な銅箔の片面に、厚み５μ
ｍ以下の粗化したＮｉまたはＴｉなど銅以外の金属を付
加する。銅以外の金属の付加方法は、電気めっきなどの
方法による。銅以外の金属の厚みは１から５μｍが好ま
しい。この薄手金属の粗化面にはクロメート処理等密着
促進の為の異種金属処理が施されていてもよい。
【０００６】Ｂ．薄手金属面を基板に樹脂を介してラミ
ネートする。樹脂としてはエポキシ系樹脂やポリイミド
系樹脂を主成分として含むものであり、他にもアクリル
樹脂，ポリイミド樹脂，ベンゾシクロブテン樹脂，フッ
素樹脂，シアネート樹脂，ＰＰＥなどや、その含有物で
もよい。
【０００７】Ｃ．銅箔を除去して基板表面に薄手の金属
層を付加する。銅箔の除去は薄手金属がＮｉの場合、ア
ルカリエッチング液が好ましく、薄手金属がＴｉの場合
は、塩化第二銅あるいは塩化第二鉄液が好ましい。
【０００８】Ｄ．穴明後、デスミアおよび導電化処理す
る。薄手金属層付基板に穴を形成する。穴形状は、スル
ーホールまたはブラインドスルーホール即ち層間接続の
ためのＩＶＨ（インタースティシャルバイアホール）と
なる。穴を形成する方法としては、ドリルまたはレーザ
を用いるのが好ましい。ここで用いることが出来るレー
ザとしては、ＣＯ２，エキシマ等の気体レーザおよびＹ
ＡＧ等の固体レーザがある。ＣＯ２レーザは、容易に大
出力を得られる事からφ５０μｍ以上のＩＶＨの加工に
適している。φ５０μｍ以下の微細なＩＶＨを加工する
場合は、より短波長で集光性のよいＹＡＧレーザが適し
ている。
【０００９】次に、過マンガン酸塩，クロム酸塩，クロ
ム酸のような酸化剤を用いて穴内部の樹脂残さを除去す
る。次に、薄手金属上及び穴内部に触媒核を付与する。
触媒核の付与には、貴金属イオンやパラジウムコロイド
を使用する。特にパラジウムコロイドを使用するのが安
価で好ましい。次に、触媒核を付与した薄手金属上及び
穴内部に薄付けの無電解めっき層を形成する。この無電
解めっきには、ＣＵＳＴ２０００（日立化成工業株式会
社製、商品名）やＣＵＳＴ２０１（日立化成工業株式会
社製、商品名）等の市販の無電解銅めっきが使用出来
る。これらの無電解銅めっきは硫酸銅，ホルマリン，錯
化剤，水酸化ナトリウムを主成分とする。めっきの厚さ
は次の電気めっきが行なえる厚さであれば良く、０．１
〜１μｍ程度である。
【００１０】Ｅ．無電解めっきを行った上にめっきレジ
ストで配線パターンを形成する。めっきレジストの膜厚
は、その後めっきする導体の厚さと同程度かより厚くす
るのが好ましい。めっきレジストに使用できる樹脂に
は、ＰＭＥＲ Ｐ−ＬＡ９００ＰＭ（東京応化株式会社
製、商品名）のような液状レジストや、ＨＷ−４２５
（日立化成工業株式会社，商品名），ＲＹ−３０２５
（日立化成工業株式会社，商品名）等のドライフィルム
がある。スルーホールまたはＩＶＨ上と導体回路となる
べき個所は、めっきレジストを形成しない。
【００１１】Ｆ．電気めっきによりパターンめっきを施
す。電気めっきには、通常プリント配線板で使用される
硫酸銅電気めっきやピロリン酸電気めっきが使用でき
る。めっきの厚さは、配線導体として使用できれば良
く、１〜１００μｍの範囲が好ましく、５〜５０μｍの
範囲がより好ましい。
【００１２】Ｇ．めっきレジストを除去後、絶縁基板上
の無電解銅めっき及び薄手金属層を除去する。めっきレ
ジストの剥離は、アルカリ性剥離液や硫酸あるいは市販
のレジスト剥離液を用いて行う。次に硫酸／過酸化水素
を主成分とするエッチング液で無電解銅めっきを除去
し、パターン部以外のＮｉ層を硝酸／過酸化水素を主成
分とするエッチング液を用いて選択除去する。以上で配
線形成が終了する。
【００１３】さらに本発明の具体的実施形態を図面を用
いて説明する。但し、本発明はこれに限定されるもので
はない。
【００１４】１８μｍ厚の表面平滑銅箔１（ａ）に３μ
ｍ厚のＮｉ粗化めっきを施した後（ｂ）、Ｎｉ面を介し
厚さ０．２ｍｍのプリプレグ３（ガラス布をエポキシ樹
脂に含浸積層したもの）に１７０℃３ＭＰａの条件で６
０分加熱加圧積層熱圧着し、アルカリエッチングにより
銅箔を除去して基板表面に３μｍ厚のＮｉ層を形成した
（ｄ）。
【００１５】次に、ドリル穴明機ＮＤ−６Ｐ１６０／１
０Ｐ（日立ビアメカニクス株式会社製，商品名）によ
り、直径３００μｍの貫通穴をあけ、過マンガン酸カリ
ウム６５ｇ／リットルと水酸化ナトリウム４０ｇ／リッ
トルの混合水溶液に、液温７０℃で２０分間浸漬し、ス
ミアの除去を行なった。その後、パラジウム溶液である
ＨＳ−２０２Ｂ（日立化成工業株式会社製，商品名）
に、２５℃で１５分間浸漬し、触媒を付与した後、ＣＵ
ＳＴ−２０１（日立化成工業株式会社製，商品名）を使
用し、液温２５℃，３０分の条件で無電解銅めっきを行
ない、厚さ０．３μｍの無電解銅めっき層を形成した
（ｅ）。
【００１６】ドライフィルムフォトレジストであるＲＹ
−３０２５（日立化成工業株式会社製，商品名）を無電
解めっき層の表面にラミネートし、電気銅めっきを施す
箇所をマスクしたフォトマスクを介して紫外線を露光
し、現像してめっきレジストを形成した（ｆ）。硫酸銅
浴を用いて、液温２５℃、電流密度１．０Ａ／ｄｍ２の
条件で、電気銅めっきを２０μｍ程度施し、回路導体幅
／回路導体間隔（Ｌ／Ｓ）＝２０／２０μｍとなるよう
に電気銅めっき層を形成した（ｇ）。
【００１７】次に、レジスト剥離液であるＨＴＯ（ニチ
ゴー・モートン株式会社製，商品名）でドライフィルム
の除去を行った。その後硫酸／過酸化水素を主成分とす
るエッチング液により無電解銅めっきを除去し、さらに
硝酸／過酸化水素の組成であるＮｉ選択エッチング液Ｎ
−９５０Ａ（メルテックス株式会社製、商品名）を用い
てパターン部以外のＮｉをエッチング除去することによ
り配線板を製作した（ｈ）。
【００１８】
【発明の効果】基板上の薄手導体層をエッチングで除去
する際、既に形成した配線のエッチングを防止すること
が出来、精度の高い配線を得ることが出来た。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a wiring board having fine wiring with high wiring accuracy. 2. Description of the Related Art In recent years, the demand for smaller, lighter, and faster electronic devices has increased the density of printed wiring boards. Conventionally, in a printed wiring board in which wiring is mainly formed by etching a roughened copper foil, it is difficult to miniaturize the wiring due to the influence of side etching, and there has been a limit in increasing the density of a substrate. Therefore, in recent years, a method of manufacturing a printed wiring board by the FAM method, which is a semi-additive method using pattern electroplating, has attracted attention. In this FAM method, as described in Japanese Patent No. 3142270, after forming a pattern electroplating resist on a thin copper foil layer, pattern electroplating is performed, and after removing the plating resist, the thin copper foil layer other than the pattern portion is etched. Although this is a method of removing, there has been a problem that the fine wiring already formed by the etching at this time is also etched, thereby lowering the wiring accuracy. [0003] The present invention relates to a method of etching a thin metal layer after forming a wiring by adding a thin metal layer other than copper, such as Ni or Ti, to the surface of an insulating substrate in the FAM method. Another object of the present invention is to solve the problems of the prior art, by using a solution for selectively etching a metal other than copper to prevent the already formed fine wiring from being etched. [0004] The present invention relates to the following. (1) A semi-additive (FA) in which a thin metal layer is added to the surface of an insulating substrate, a wiring pattern is formed by electroplating, and the thin metal layer on the surface of the substrate is removed to form fine wiring.
In the M: Foil Additive Method) method, a thin metal layer other than copper such as roughened Ni or Ti having a thickness of 5 μm or less is previously added to one side of a copper foil having a smooth surface, and the thin metal surface is coated with a resin. After laminating through, a copper foil is removed to add a roughened thin metal layer having a thickness of 5 μm or less to the substrate surface, a pattern electroplating resist is formed, pattern electroplating is performed, and the resist is removed. A method for manufacturing a printed wiring board, comprising at least a step of etching and removing a thin metal layer. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The production of the FAM method wiring board of the present invention is described in the following. Beforehand, on one side of copper foil with smooth surface, thickness 5μ
A metal other than copper, such as m or less of roughened Ni or Ti, is added. The method of adding a metal other than copper is based on a method such as electroplating. The thickness of the metal other than copper is preferably 1 to 5 μm. The roughened surface of the thin metal may be subjected to a dissimilar metal treatment for promoting adhesion, such as a chromate treatment. B. A thin metal surface is laminated on a substrate via a resin. The resin contains an epoxy-based resin or a polyimide-based resin as a main component, and may be an acrylic resin, a polyimide resin, a benzocyclobutene resin, a fluororesin, a cyanate resin, PPE, or the like. C. The copper foil is removed and a thin metal layer is added to the substrate surface. When the thin metal is Ni, an alkali etching solution is preferable for removing the copper foil, and when the thin metal is Ti, a cupric chloride or a ferric chloride solution is preferable. [0008] D. After drilling, desmearing and conductivity treatment are performed. A hole is formed in the substrate with a thin metal layer. The hole shape is a through hole or a blind through hole, that is, an IVH (interstitial via hole) for interlayer connection. As a method for forming the holes, it is preferable to use a drill or a laser. Lasers that can be used here include gas lasers such as CO2 and excimer and Y
There are solid state lasers such as AG. The CO2 laser is suitable for processing an IVH having a diameter of 50 μm or more because a large output can be easily obtained. In the case of processing a fine IVH having a diameter of 50 μm or less, a YAG laser having a shorter wavelength and a good condensing property is suitable. Next, the resin residue inside the hole is removed by using an oxidizing agent such as permanganate, chromate or chromate. Next, a catalyst core is provided on the thin metal and inside the hole.
Noble metal ions or palladium colloids are used to provide the catalyst nuclei. In particular, it is preferable to use a palladium colloid at a low cost. Next, a thin electroless plating layer is formed on the thin metal provided with the catalyst nucleus and inside the hole. For this electroless plating, commercially available electroless copper plating such as CUST2000 (trade name, manufactured by Hitachi Chemical Co., Ltd.) or CUST 201 (trade name, manufactured by Hitachi Chemical Co., Ltd.) can be used. These electroless copper platings contain copper sulfate, formalin, a complexing agent, and sodium hydroxide as main components. The thickness of the plating may be any thickness as long as the next electroplating can be performed.
１1 μm. E. After performing electroless plating, a wiring pattern is formed with a plating resist. The thickness of the plating resist is preferably equal to or greater than the thickness of the conductor to be subsequently plated. Resins that can be used for the plating resist include liquid resists such as PMER P-LA900PM (trade name, manufactured by Tokyo Ohka Co., Ltd.) and HW-425.
(Hitachi Chemical Industries, Ltd., trade name), RY-3025
(Hitachi Chemical Industries, Ltd.). No plating resist is formed on the through-hole or on the IVH to become a conductor circuit. F. Pattern plating is performed by electroplating. For the electroplating, copper sulfate electroplating and pyrophosphoric acid electroplating usually used for printed wiring boards can be used. The plating thickness may be any thickness as long as it can be used as a wiring conductor, and is preferably in the range of 1 to 100 μm, more preferably in the range of 5 to 50 μm. G. After removing the plating resist, the electroless copper plating and the thin metal layer on the insulating substrate are removed. Stripping of the plating resist is performed using an alkaline stripping solution, sulfuric acid, or a commercially available resist stripping solution. Next, the electroless copper plating is removed with an etching solution containing sulfuric acid / hydrogen peroxide as a main component, and the Ni layer other than the pattern portion is selectively removed using an etching solution containing nitric acid / hydrogen peroxide as a main component. This completes the wiring formation. Further, a specific embodiment of the present invention will be described with reference to the drawings. However, the present invention is not limited to this. 3 μm on 18 μm thick smooth surface copper foil 1 (a)
After the Ni roughening plating having a thickness of m is applied (b), the prepreg 3 (a glass cloth impregnated and laminated with an epoxy resin) having a thickness of 0.2 mm is coated on the prepreg 3 at a temperature of 170 ° C. and 3 MPa through a Ni surface.
The laminate was heat-pressed and laminated by thermocompression for 0 minutes, and the copper foil was removed by alkali etching to form a 3 μm thick Ni layer on the substrate surface (d). Next, a drilling machine ND-6P160 / 1
A through hole having a diameter of 300 μm was made with 0P (trade name, manufactured by Hitachi Via Mechanics Co., Ltd.), and immersed in a mixed aqueous solution of 65 g / l of potassium permanganate and 40 g / l of sodium hydroxide at a liquid temperature of 70 ° C. for 20 minutes. And the smear was removed. Thereafter, HS-202B (trade name, manufactured by Hitachi Chemical Co., Ltd.) which is a palladium solution
Immersion at 25 ° C. for 15 minutes to give a catalyst,
Using ST-201 (trade name, manufactured by Hitachi Chemical Co., Ltd.), electroless copper plating was performed at a liquid temperature of 25 ° C. for 30 minutes to form an electroless copper plating layer having a thickness of 0.3 μm ( e). RY which is a dry film photoresist
-3025 (trade name, manufactured by Hitachi Chemical Co., Ltd.) is laminated on the surface of the electroless plating layer, exposed to ultraviolet light through a photomask masking a portion to be subjected to electrolytic copper plating, and developed to form a plating resist. (F). Using a copper sulfate bath, under conditions of a liquid temperature of 25 ° C. and a current density of 1.0 A / dm 2 , electrolytic copper plating is applied to about 20 μm, and the circuit conductor width / circuit conductor interval (L / S) = 20/20 μm. Thus, an electrolytic copper plating layer was formed (g). Next, the dry film was removed with HTO (trade name, manufactured by Nichigo Morton Co., Ltd.) as a resist stripping solution. Thereafter, the electroless copper plating is removed with an etching solution containing sulfuric acid / hydrogen peroxide as a main component, and a Ni selective etching solution N having a nitric acid / hydrogen peroxide composition.
Using -950A (trade name, manufactured by Meltex Co., Ltd.), a wiring board was manufactured by etching away Ni except for the pattern portion (h). When the thin conductive layer on the substrate is removed by etching, etching of the already formed wiring can be prevented, and a highly accurate wiring can be obtained.
【図面の簡単な説明】
【図１】本発明の実施例を説明するための各工程におけ
る断面図である。
【符号の説明】
１．平滑銅箔
２．Ｎｉ粗化層
３．プリプレグ
４．無電解銅めっき
５．めっきレジスト
６．電気銅めっきBRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view in each step for explaining an example of the present invention. [Explanation of reference numerals] 1. smooth copper foil 2. Roughened Ni layer Prepreg4. 4. Electroless copper plating Plating resist6. Electro copper plating
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4E351 AA03 AA04 AA05 BB01 BB33 BB35 CC06 CC19 DD04 DD11 DD19 DD56 GG20 5E343 AA02 AA13 AA15 AA17 AA18 AA19 BB16 BB24 BB35 BB44 BB67 CC34 CC50 CC62 CC73 DD44 DD51 EE54 ER02 ER16 ER18 ER26 GG08 ────────────────────────────────────────────────── ─── Continuation of front page F term (reference) 4E351 AA03 AA04 AA05 BB01 BB33 BB35 CC06 CC19 DD04 DD11 DD19 DD56 GG20 5E343 AA02 AA13 AA15 AA17 AA18 AA19 BB16 BB24 BB35 BB44 BB67 CC34 CC50 CC62 CC73 DD44 DD51 EE54 ER02 ER16 ER18 ER26 GG08
Claims (1)
電気めっきにより配線パターンを形成後、基板表面の薄
手金属層を除去して微細配線を形成するセミアデイテイ
ブ（ＦＡＭ：Ｆｏｉｌ Ａｄｄｉｔｉｖｅ Ｍｅｔｈｏ
ｄ）工法において、あらかじめ、表面が平滑な銅箔の片
面に、厚み５μｍ以下の粗化したＮｉまたはＴｉなど銅
以外の薄手金属層を付加し、薄手金属面を基板に樹脂を
介してラミネート後、銅箔を除去することにより基板表
面に厚み５μｍ以下の粗化した薄手金属層を付加し、パ
ターン電気めっきレジストを形成した後にパターン電気
めっきを行いレジストを除去し、パターン部以外の薄手
金属層をエッチング除去する工程を少なくとも有するこ
とを特徴とするプリント配線板の製造方法。Claims: 1. A thin metal layer is added to the surface of an insulating substrate,
After a wiring pattern is formed by electroplating, a thin metal layer on the substrate surface is removed to form a fine wiring (FAM: Foil Additive Metho).
d) In the construction method, a thin metal layer other than copper such as roughened Ni or Ti having a thickness of 5 μm or less is added to one side of a copper foil having a smooth surface in advance, and the thin metal surface is laminated on a substrate via a resin. Then, a roughened thin metal layer having a thickness of 5 μm or less is added to the substrate surface by removing the copper foil, a pattern electroplating resist is formed, and then the pattern electroplating is performed to remove the resist, and the thin metal layer other than the pattern portion is removed. A method for manufacturing a printed wiring board, comprising at least a step of removing a substrate by etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001289246A JP2003101194A (en) | 2001-09-21 | 2001-09-21 | Production method for printed wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001289246A JP2003101194A (en) | 2001-09-21 | 2001-09-21 | Production method for printed wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003101194A true JP2003101194A (en) | 2003-04-04 |
Family
ID=19111767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001289246A Pending JP2003101194A (en) | 2001-09-21 | 2001-09-21 | Production method for printed wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003101194A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006334694A (en) * | 2005-05-31 | 2006-12-14 | Ibiden Co Ltd | Method of manufacturing drill and printed circuit board |
| JP2013038120A (en) * | 2011-08-04 | 2013-02-21 | Fujikura Ltd | Manufacturing method of printed-wiring board |
| CN103002663A (en) * | 2011-09-09 | 2013-03-27 | 深南电路有限公司 | Printed circuit board processing method |
| US10314608B2 (en) | 2007-02-05 | 2019-06-11 | Boston Scientific Scimed Inc. | Thrombectomy apparatus and method |
| US11490909B2 (en) | 2014-05-19 | 2022-11-08 | Walk Vascular, Llc | Systems and methods for removal of blood and thrombotic material |
| US11497521B2 (en) | 2008-10-13 | 2022-11-15 | Walk Vascular, Llc | Assisted aspiration catheter system |
| US11510689B2 (en) | 2016-04-06 | 2022-11-29 | Walk Vascular, Llc | Systems and methods for thrombolysis and delivery of an agent |
| US11672561B2 (en) | 2015-09-03 | 2023-06-13 | Walk Vascular, Llc | Systems and methods for manipulating medical devices |
| US11678905B2 (en) | 2018-07-19 | 2023-06-20 | Walk Vascular, Llc | Systems and methods for removal of blood and thrombotic material |
| US12171444B2 (en) | 2021-02-15 | 2024-12-24 | Walk Vascular, Llc | Systems and methods for removal of blood and thrombotic material |
| US12274458B2 (en) | 2021-02-15 | 2025-04-15 | Walk Vascular, Llc | Systems and methods for removal of blood and thrombotic material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03254178A (en) * | 1990-03-05 | 1991-11-13 | Hitachi Chem Co Ltd | Manufacture of wiring board |
| JPH05167220A (en) * | 1991-12-12 | 1993-07-02 | Hitachi Chem Co Ltd | Manufacture of wiring board |
| JPH07226575A (en) * | 1994-02-14 | 1995-08-22 | Hitachi Chem Co Ltd | Manufacture of printed wiring board |
-
2001
- 2001-09-21 JP JP2001289246A patent/JP2003101194A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03254178A (en) * | 1990-03-05 | 1991-11-13 | Hitachi Chem Co Ltd | Manufacture of wiring board |
| JPH05167220A (en) * | 1991-12-12 | 1993-07-02 | Hitachi Chem Co Ltd | Manufacture of wiring board |
| JPH07226575A (en) * | 1994-02-14 | 1995-08-22 | Hitachi Chem Co Ltd | Manufacture of printed wiring board |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006334694A (en) * | 2005-05-31 | 2006-12-14 | Ibiden Co Ltd | Method of manufacturing drill and printed circuit board |
| US10314608B2 (en) | 2007-02-05 | 2019-06-11 | Boston Scientific Scimed Inc. | Thrombectomy apparatus and method |
| US11653945B2 (en) | 2007-02-05 | 2023-05-23 | Walk Vascular, Llc | Thrombectomy apparatus and method |
| US11497521B2 (en) | 2008-10-13 | 2022-11-15 | Walk Vascular, Llc | Assisted aspiration catheter system |
| US12329406B2 (en) | 2008-10-13 | 2025-06-17 | Walk Vascular, Llc | Assisted aspiration catheter system |
| JP2013038120A (en) * | 2011-08-04 | 2013-02-21 | Fujikura Ltd | Manufacturing method of printed-wiring board |
| CN103002663A (en) * | 2011-09-09 | 2013-03-27 | 深南电路有限公司 | Printed circuit board processing method |
| US12150659B2 (en) | 2014-05-19 | 2024-11-26 | Walk Vascular, Llc | Systems and methods for removal of blood and thrombotic material |
| US11490909B2 (en) | 2014-05-19 | 2022-11-08 | Walk Vascular, Llc | Systems and methods for removal of blood and thrombotic material |
| US12156665B2 (en) | 2014-05-19 | 2024-12-03 | Walk Vascular, Llc | Systems and methods for removal of blood and thrombotic material |
| US11672561B2 (en) | 2015-09-03 | 2023-06-13 | Walk Vascular, Llc | Systems and methods for manipulating medical devices |
| US11510689B2 (en) | 2016-04-06 | 2022-11-29 | Walk Vascular, Llc | Systems and methods for thrombolysis and delivery of an agent |
| US11678905B2 (en) | 2018-07-19 | 2023-06-20 | Walk Vascular, Llc | Systems and methods for removal of blood and thrombotic material |
| US12171444B2 (en) | 2021-02-15 | 2024-12-24 | Walk Vascular, Llc | Systems and methods for removal of blood and thrombotic material |
| US12171445B2 (en) | 2021-02-15 | 2024-12-24 | Walk Vascular, Llc | Systems and methods for removal of blood and thrombotic material |
| US12274458B2 (en) | 2021-02-15 | 2025-04-15 | Walk Vascular, Llc | Systems and methods for removal of blood and thrombotic material |
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