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JP2002076228A - 樹脂封止型半導体装置 - Google Patents

樹脂封止型半導体装置

Info

Publication number
JP2002076228A
JP2002076228A JP2000266704A JP2000266704A JP2002076228A JP 2002076228 A JP2002076228 A JP 2002076228A JP 2000266704 A JP2000266704 A JP 2000266704A JP 2000266704 A JP2000266704 A JP 2000266704A JP 2002076228 A JP2002076228 A JP 2002076228A
Authority
JP
Japan
Prior art keywords
die pad
semiconductor device
resin
semiconductor element
silver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000266704A
Other languages
English (en)
Inventor
Chikao Ikenaga
知加雄 池永
Koji Tomita
幸治 冨田
Takeshi Tsunoda
剛 角田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP2000266704A priority Critical patent/JP2002076228A/ja
Priority to US09/945,210 priority patent/US6703696B2/en
Priority to EP06004143A priority patent/EP1662565B1/en
Priority to EP01121166A priority patent/EP1187202A3/en
Publication of JP2002076228A publication Critical patent/JP2002076228A/ja
Pending legal-status Critical Current

Links

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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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Abstract

(57)【要約】 【課題】 ダイパッド上へのグランドボンディングを施
したタイプであって、プリント基板への搭載時にワイヤ
ー剥がれの事故を起こさないようにした樹脂封止型半導
体装置を提供する。 【解決手段】 ダイパッド３上に搭載された半導体素子
４と、この半導体素子４の電極とリードフレームの端子
部５とを電気的に接続したワイヤー６と、半導体素子４
の残りの電極をダイパッド表面にグランドボンディング
したワイヤー８と、ダイパッド３の裏面及び端子部５の
下面と側面とを露出させた状態で半導体素子４の外囲領
域を封止してなる封止樹脂７とを備えた半導体装置にお
いて、ダイパッド表面におけるワイヤー接続用の銀メッ
キ１２を、ダイパッド３の周縁と半導体素子４の外縁の
間で且つそれらから間隔を置いた位置に形成する。ダイ
パッド３と封止樹脂７との密着性が向上し、プリント基
板への搭載時に熱がかかってもワイヤー剥がれの事故を
起こさない。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、リードフレーム上
に半導体素子を搭載し、その外囲、特に半導体素子の上
面側をモールド樹脂で封止した樹脂封止型半導体装置の
技術分野に属するものである。
【０００２】
【従来の技術】近年、基板実装の高密度化に伴い、基板
実装される半導体製品の小型化・薄型化が要求されてい
る。ＬＳＩも、高集積化によるチップ数の削減とパッケ
ージの小型・軽量化が厳しく要求され、いわゆるＣＳＰ
（Chip Size Package)の普及が急速に進んでいる。特
に、リードフレームを用いた薄型の半導体製品の開発に
おいては、リードフレームに半導体素子を搭載し、その
搭載面をモールド樹脂で封止する片面封止タイプの樹脂
封止型半導体装置が開発されている。
【０００３】図１は樹脂封止型半導体装置の一例を示す
断面図、図２はその封止樹脂を透視した状態で示す平面
図である。これらの図に示される樹脂封止型半導体装置
は、リードフレーム１の吊りリード２で支持されたダイ
パッド３に搭載された半導体素子４と、この半導体素子
４の上面の電極とリードフレーム１の端子部５とを電気
的に接続したワイヤー６と、半導体素子４の上側とダイ
パッド３の下側とを含む半導体素子４の外囲領域を封止
した封止樹脂７とを備えている。この樹脂封止型半導体
装置は、いわゆるアウターリードが突き出ておらず、イ
ンナーリードとアウターリードの両者が端子部５として
一体となったノンリードタイプである。また、ここで用
いられているリードフレーム１は、ダイパッド３が端子
部５より上方に位置するように、吊りリード２がアップ
セット処理されている。このようにダイパッド３に段差
を設けることにより、ダイパッド３の下側にも封止樹脂
７を存在させている。
【０００４】上記のようなノンリードタイプの樹脂封止
型半導体装置は、半導体素子のサイズが小型であるた
め、１枚のフレームの幅方向に複数列配列して製造する
マトリックスタイプが主流である。そして、最近では、
コストダウンの要求から、図３に示すような個別にモー
ルドするタイプから、図４に示すような一括してモール
ドするタイプへ移行することが考えられている。
【０００５】個別モールドタイプは、図３（Ａ）に示す
ように、１枚のフレームＦ内に小さなサイズの個々のモ
ールドキャビティＣを分かれた状態で設けるようにし、
モールド後は金型により個別に打ち抜いて図３（Ｂ）に
示す半導体装置Ｓを得るものである。すなわち、半導体
素子を銀ペースト等によりリードフレームのダイパッド
上に搭載し、ワイヤーボンディングを実施した後、個々
の半導体素子を個別にモールドしてから、金型により個
々の半導体装置として打ち抜くのである。
【０００６】一括モールドタイプは、図４（Ａ）に示す
ように、１枚のフレームＦ内に大きなサイズの幾つかの
モールドキャビティＣを設けるようにし、その一つ一つ
のモールドキャビティＣ内には多数の半導体素子をマト
リックス状に配列し、それらの半導体素子を一括してモ
ールドした後、各リードフレームのグリッドリードＬの
ところをダイシングソーで切断して図４（Ｂ）に示す半
導体装置Ｓを得るものである。すなわち、半導体素子を
銀ペースト等によりリードフレームのダイパッド上に搭
載し、ワイヤーボンディングを実施した後、複数個配列
されている半導体素子を所定のキャビティサイズで一括
モールドしてから、ダイシングにより個片化するのであ
る。
【０００７】
【発明が解決しようとする課題】上記したノンリードタ
イプの樹脂封止型半導体装置では、放熱効果を大きくす
るためにダイパッドを露出させると共に、半導体素子の
要求特性からダイパッド上にグランドボンディングを必
要とするタイプがある。図５はこのタイプの樹脂封止型
半導体装置の断面図、図６はその封止樹脂を透視した状
態で示す平面図であり、これを製造するに際しては、半
導体素子４を銀ペースト等によりリードフレーム１のダ
イパッド３上に搭載した後、半導体素子４の上面にある
所定の電極と端子部５とをワイヤー６で接続すると共
に、半導体素子４の上面の残りの電極をダイパッド３の
表面にワイヤー８で接続してから、封止樹脂７をモール
ドし、しかる後に上記した如く個々の半導体装置に個片
化する。なお、図示はしていないが、図１に示すタイプ
ではリードフレーム１における端子部５のワイヤー接続
部分に銀メッキを施しており、図５に示すタイプではダ
イパッド３の表面にもワイヤー接続のための銀メッキを
施している。
【０００８】ところで、図５に示す如き樹脂封止型半導
体装置をプリント基板に搭載するに際しては、端子部５
の露出部のみならず、ダイパッド３の露出部にも半田メ
ッキを施しておくと共に、それらに対応するプリント基
板上の場所に半田クリームを塗布しておき、プリント基
板上に半導体装置を載置した状態でオーブンの中を通し
て２３０℃程度に加熱し、半田をリフローさせることで
半導体装置をプリント基板上の所定位置に強固に固定す
る方法が採られている。
【０００９】しかしながら、図５に示すタイプの樹脂封
止型半導体装置にあっては、封止樹脂７とリードフレー
ム１の銅材の熱膨張率の違いから、リフロー時にダイパ
ッド３とワイヤー８の接続箇所に応力が掛かり、しかも
ダイパッド表面に施されたワイヤー接続用の銀メッキ部
分と封止樹脂７との密着性が良くないこともあって、ワ
イヤー剥がれを起こす事故が発生していた。さらに、両
者の熱膨張率の違いから、ダイパッドの角付近を起点と
して樹脂にクラックが生じるケースもあり、この場合、
クラックの入り方によってはワイヤー切断が起こる可能
性がある。
【００１０】本発明は、このような問題点に鑑みてなさ
れたものであり、その目的とするところは、ダイパッド
上へのグランドボンディングを施したタイプであって、
プリント基板への搭載時にワイヤー剥がれ及びワイヤー
切断の事故を起こさないようにした樹脂封止型半導体装
置を提供することにある。
【００１１】
【課題を解決するための手段】上記の目的を達成するた
め、本発明の樹脂封止型半導体装置は、リードフレーム
の吊りリードで支持されたダイパッド上に搭載された半
導体素子と、この半導体素子の上面にある所定の電極と
リードフレームの端子部とを電気的に接続したワイヤー
と、半導体素子の上面の残りの電極をダイパッド表面に
グランドボンディングしたワイヤーと、ダイパッドの裏
面及び端子部の下面と側面とを露出させた状態で、すべ
てのワイヤーを含む半導体素子の外囲領域を封止してな
る封止樹脂とを備えた樹脂封止型半導体装置において、
ダイパッド表面におけるワイヤー接続用の銀メッキを、
ダイパッドの周縁と半導体素子の外縁の間で且つそれら
から間隔を置いた位置に形成したことを特徴としてい
る。
【００１２】
【発明の実施の形態】次に、本発明の実施の形態を図面
を参照して説明する。
【００１３】図７は本発明に係る樹脂封止型半導体装置
の一例を示す断面図、図８はその封止樹脂を透視した状
態で示す平面図である。
【００１４】この樹脂封止型半導体装置は、一括モール
ドタイプであり、図示のように、リードフレーム１の吊
りリード２で支持されたダイパッド３に搭載された半導
体素子４と、この半導体素子４の上面にある所定の電極
９とリードフレームの端子部５とを電気的に接続したワ
イヤー６と、半導体素子４の上面の残りの電極１０をダ
イパッド表面にグランドボンディングしたワイヤー８
と、ダイパッド３の裏面及び端子部５の下面と側面とを
露出させた状態で、すべてのワイヤー６，８を含む半導
体素子４の外囲領域を封止してなる封止樹脂７とを備え
ている。そして、端子部５のワイヤー接続部分に銀メッ
キ部分１１が形成されていると共に、ダイパッド３の表
面にもワイヤー接続用の銀メッキ部分１２が形成されて
いる。なお、図８では図面を見やすくするため銀メッキ
部分１１，１２にハッチングを入れている。
【００１５】ダイパッド３の表面における銀メッキ部分
１２は、図８の如くダイパッド３の周縁と半導体素子４
の外縁との間で且つそれらから間隔を置いた位置にライ
ン状に形成されている。したがって、ダイパッド３の表
面において封止樹脂７は銀メッキ部分１２のみならずそ
の両側の銅材とも接するために、全て銀メッキと接する
場合と比べると両者の密着性は良好となる。
【００１６】また、図７及び図８に示した例では銀メッ
キ部分１２を連続状態で形成しているが、ダイパッド３
の表面におけるワイヤー８の接続箇所となる部分にだけ
アイランド状に形成してもよい。このように銀メッキ部
分１２を不連続状態で形成すると、銅材と接する面積が
大きくなるので、密着性はさらに良好となる。
【００１７】なお、銀メッキ部分１１，１２は、従来と
同様に複数のリードフレーム１がマトリックス状に配置
されたフレーム状態の時に形成されるものであり、ダイ
パッド３上の銀メッキ部分１２を従来とは異なってライ
ン状又は不連続状態に形成すればよい。
【００１８】図９は本発明に係る樹脂封止型半導体装置
の別の例を示す断面図、図１０はその封止樹脂を透視し
た状態で示す平面図である。
【００１９】この樹脂封止型半導体装置は、図７及び図
８に示したのと略同様であるが、さらにダイパッド３の
表面におけるワイヤー接続用の銀メッキ部分１２の両側
に沿って凹部１３，１４を形成した構成になっている。
この樹脂封止型半導体装置では、封止樹脂７がこれらの
凹部１３，１４に侵入するので、封止樹脂７とダイパッ
ド３との密着性は一層良好なものになる。
【００２０】なお、凹部はライン状の銀メッキ部分１２
の片側だけでも封止樹脂７とダイパッド３の密着性を上
げる効果はある。また、密着性をさらに上げるために凹
部を貫通孔にしてもよいが、この場合はダイパッドが欠
落しないように一部を残しておく必要がある。
【００２１】図１１は本発明に係る樹脂封止型半導体装
置のさらに別の例を示す断面図、図１２はその封止樹脂
を透視した状態で示す平面図、図１３は図１２のＡ−Ａ
での切断端面図である。
【００２２】この樹脂封止型半導体装置は、図７及び図
８に示したのと比べると、ダイパッド３の表面における
ワイヤー接続用の銀メッキ部分１２の構成が異なってい
る。すなわち、ダイパッド表面におけるワイヤー接続用
の銀メッキを不連続状態に形成するとともに、それら不
連続の銀メッキ部分１２の間に凹部１５を形成した構成
になっている。この樹脂封止型半導体装置では、封止樹
脂７がこれらの凹部１５に侵入するので、封止樹脂７と
ダイパッド３との密着性は一層良好なものになる。
【００２３】なお、凹部１５の代わりに貫通孔にしても
よく、そうすることで封止樹脂７とダイパッド３との密
着性はさらに良好なものになる。
【００２４】なお、上記の如き凹部は、リードフレーム
の形成時にハーフエッチングやくぼみ加工により形成す
ることができる。また、貫通孔は両面からのエッチング
や機械的なプレス加工により形成することができる。
【００２５】なお、上記の説明では、一括モールドタイ
プについて述べたが、個別モールドタイプの樹脂封止型
半導体装置についても同様である。
【００２６】
【発明の効果】以上説明したように、本発明の樹脂封止
型半導体装置は、リードフレームの吊りリードで支持さ
れたダイパッド上に搭載された半導体素子と、この半導
体素子の上面にある所定の電極とリードフレームの端子
部とを電気的に接続したワイヤーと、半導体素子の上面
の残りの電極をダイパッド表面にグランドボンディング
したワイヤーと、ダイパッドの裏面及び端子部の下面と
側面とを露出させた状態で、すべてのワイヤーを含む半
導体素子の外囲領域を封止してなる封止樹脂とを備えた
樹脂封止型半導体装置において、ダイパッド表面におけ
るワイヤー接続用の銀メッキを、ダイパッドの周縁と半
導体素子の外縁の間で且つそれらから間隔を置いた位置
に形成した構成としたので、封止樹脂がリードフレーム
の銅材とも接することになり、ダイパッドと封止樹脂と
の密着性が向上することから、プリント基板への搭載時
にワイヤー剥がれ及びワイヤー切断の事故を起こすこと
がないという信頼性が保たれたものになる。
【図面の簡単な説明】
【図１】樹脂封止型半導体装置の一例を示す断面図であ
る。
【図２】図１の樹脂封止型半導体装置をその封止樹脂を
透視した状態で示す平面図である。
【図３】個別モールドタイプの説明図である。
【図４】一括モールドタイプの説明図である。
【図５】ダイパッド上にグランドボンディングしたタイ
プの樹脂封止型半導体装置の断面図である。
【図６】図５の樹脂封止型半導体装置をその封止樹脂を
透視した状態で示す平面図である。
【図７】本発明に係る樹脂封止型半導体装置の一例を示
す断面図である。
【図８】図７の樹脂封止型半導体装置をその封止樹脂を
透視した状態で示す平面図である。
【図９】本発明に係る樹脂封止型半導体装置の別の例を
示す断面図である。
【図１０】図９の樹脂封止型半導体装置をその封止樹脂
を透視した状態で示す平面図である。
【図１１】本発明に係る樹脂封止型半導体装置のさらに
別の例を示す断面図である。
【図１２】図１１の樹脂封止型半導体装置をその封止樹
脂を透視した状態で示す平面図である。
【図１３】図１２のＡ−Ａでの切断端面図である。
【符号の説明】
１ リードフレーム ２ 吊りリード ３ ダイパッド ４ 半導体素子 ５ 端子部 ６ ワイヤー ７ 封止樹脂 ８ ワイヤー ９，１０ 電極 １１，１２ 銀メッキ部分 １３，１４ 凹部 １５ 凹部 Ｃ モールドキャビティ Ｆ フレーム Ｌ グリッドリード
フロントページの続き (72)発明者 角田 剛 東京都新宿区市谷加賀町一丁目１番１号 大日本印刷株式会社内 Ｆターム(参考） 5F067 AA00 AA07 AB04 BA02 BB10 BE02 DA01 DA11 DC15 DC17 DF00 DF06

Claims (7)

    【特許請求の範囲】
  1. 【請求項１】 リードフレームの吊りリードで支持され
    たダイパッド上に搭載された半導体素子と、この半導体
    素子の上面にある所定の電極とリードフレームの端子部
    とを電気的に接続したワイヤーと、半導体素子の上面の
    残りの電極をダイパッド表面にグランドボンディングし
    たワイヤーと、ダイパッドの裏面及び端子部の下面と側
    面とを露出させた状態で、すべてのワイヤーを含む半導
    体素子の外囲領域を封止してなる封止樹脂とを備えた樹
    脂封止型半導体装置において、ダイパッド表面における
    ワイヤー接続用の銀メッキを、ダイパッドの周縁と半導
    体素子の外縁の間で且つそれらから間隔を置いた位置に
    形成したことを特徴とする樹脂封止型半導体装置。
  2. 【請求項２】 ダイパッド表面におけるワイヤー接続用
    の銀メッキをライン状に形成したことを特徴とする請求
    項１に記載の樹脂封止型半導体装置。
  3. 【請求項３】 ダイパッド表面におけるワイヤー接続用
    の銀メッキをライン状に形成するとともに、ライン状の
    銀メッキの少なくとも片側に沿って凹部を形成したこと
    を特徴とする請求項１に記載の樹脂封止型半導体装置。
  4. 【請求項４】 少なくとも一部を残して凹部を貫通孔に
    したことを特徴とする請求項３に記載の樹脂封止型半導
    体装置。
  5. 【請求項５】 ダイパッド表面におけるワイヤー接続用
    の銀メッキを不連続状態に形成したことを特徴とする請
    求項１に記載の樹脂封止型半導体装置。
  6. 【請求項６】 不連続の銀メッキ部分の間に凹部を形成
    したことを特徴とする請求項５に記載の樹脂封止型半導
    体装置。
  7. 【請求項７】 不連続の銀メッキ部分の間に貫通孔を形
    成したことを特徴とする請求項５に記載の樹脂封止型半
    導体装置。
JP2000266704A 2000-09-04 2000-09-04 樹脂封止型半導体装置 Pending JP2002076228A (ja)

Priority Applications (4)

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JP2000266704A JP2002076228A (ja) 2000-09-04 2000-09-04 樹脂封止型半導体装置
US09/945,210 US6703696B2 (en) 2000-09-04 2001-08-31 Semiconductor package
EP06004143A EP1662565B1 (en) 2000-09-04 2001-09-04 Semiconductor package
EP01121166A EP1187202A3 (en) 2000-09-04 2001-09-04 Semiconductor package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
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Country Link
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EP (2) EP1662565B1 (ja)
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