Classifications

• • H—ELECTRICITY
  • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • H02K—DYNAMO-ELECTRIC MACHINES
  • H02K11/00—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
  • H02K11/30—Structural association with control circuits or drive circuits
  • H02K11/33—Drive circuits, e.g. power electronics
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
  • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
  • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D64/00—Electrodes of devices having potential barriers
  • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
  • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
  • H10D64/311—Gate electrodes for field-effect devices
  • H10D64/411—Gate electrodes for field-effect devices for FETs
  • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
  • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
  • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
  • H10D89/10—Integrated device layouts

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Control Of Ac Motors In General (AREA)
• Semiconductor Integrated Circuits (AREA)
• Inverter Devices (AREA)

Priority Applications (5)

Applications Claiming Priority (1)

Publications (1)

Family

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Family Applications (1)

Country Status (5)

Families Citing this family (2)

Citations (4)

Family Cites Families (6)

• 2019
  • 2019-11-20 IT IT102019000021702A patent/IT201900021702A1/it unknown
• 2020
  • 2020-11-12 CN CN202080080116.4A patent/CN115039234A/zh active Pending
  • 2020-11-12 WO PCT/IB2020/060637 patent/WO2021099894A1/en unknown
  • 2020-11-12 EP EP20811231.8A patent/EP4062455A1/en active Pending
  • 2020-11-12 US US17/778,060 patent/US20220416628A1/en active Pending

Patent Citations (4)

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