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IE52758B1 - Gate enhanced rectifier - Google Patents

Gate enhanced rectifier

Info

Publication number
IE52758B1
IE52758B1 IE2693/81A IE269381A IE52758B1 IE 52758 B1 IE52758 B1 IE 52758B1 IE 2693/81 A IE2693/81 A IE 2693/81A IE 269381 A IE269381 A IE 269381A IE 52758 B1 IE52758 B1 IE 52758B1
Authority
IE
Ireland
Prior art keywords
island
gate
electrode
base region
gate electrode
Prior art date
Application number
IE2693/81A
Other languages
English (en)
Other versions
IE812693L (en
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of IE812693L publication Critical patent/IE812693L/xx
Publication of IE52758B1 publication Critical patent/IE52758B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
IE2693/81A 1980-12-02 1981-11-17 Gate enhanced rectifier IE52758B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21218180A 1980-12-02 1980-12-02

Publications (2)

Publication Number Publication Date
IE812693L IE812693L (en) 1982-06-02
IE52758B1 true IE52758B1 (en) 1988-02-17

Family

ID=22789906

Family Applications (1)

Application Number Title Priority Date Filing Date
IE2693/81A IE52758B1 (en) 1980-12-02 1981-11-17 Gate enhanced rectifier

Country Status (8)

Country Link
JP (1) JPS57120369A (de)
CH (1) CH657230A5 (de)
DE (1) DE3147075A1 (de)
FR (1) FR2495382B1 (de)
GB (1) GB2088631B (de)
IE (1) IE52758B1 (de)
MX (1) MX151412A (de)
SE (1) SE8107136L (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2524710B1 (fr) * 1982-04-01 1986-03-14 Gen Electric Dispositif de commutation a semi-conducteur
DE3380136D1 (en) * 1982-04-12 1989-08-03 Gen Electric Semiconductor device having a diffused region of reduced length and method of fabricating the same
JPS594077A (ja) * 1982-06-30 1984-01-10 Toshiba Corp 電界効果トランジスタ
JPS5927569A (ja) * 1982-08-06 1984-02-14 Hitachi Ltd 半導体スイツチ素子
CA1200322A (en) * 1982-12-13 1986-02-04 General Electric Company Bidirectional insulated-gate rectifier structures and method of operation
EP0273030A3 (de) * 1982-12-13 1988-09-21 General Electric Company Laterale Gleichrichter mit isoliertem Gate
DE3482354D1 (de) * 1983-02-04 1990-06-28 Gen Electric Elektrische schaltung eine hybride leistungsschalthalbleiteranordnung mit scr-struktur enthaltend.
JPS59211271A (ja) * 1983-05-17 1984-11-30 Toshiba Corp 半導体装置
JPS605568A (ja) * 1983-06-23 1985-01-12 Sanken Electric Co Ltd 縦型絶縁ゲ−ト電界効果トランジスタ
EP0144654A3 (de) * 1983-11-03 1987-10-07 General Electric Company Halbleiteranordnung mit dielektrisch isoliertem Feldeffekttransistor mit isoliertem Gate
US4618872A (en) * 1983-12-05 1986-10-21 General Electric Company Integrated power switching semiconductor devices including IGT and MOSFET structures
JPS60174258U (ja) * 1983-12-22 1985-11-19 株式会社明電舎 電界制御型半導体素子
JPH0810763B2 (ja) * 1983-12-28 1996-01-31 株式会社日立製作所 半導体装置
JPH0618255B2 (ja) * 1984-04-04 1994-03-09 株式会社東芝 半導体装置
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
JPS61185971A (ja) * 1985-02-14 1986-08-19 Toshiba Corp 伝導度変調型半導体装置
JPS61191071A (ja) * 1985-02-20 1986-08-25 Toshiba Corp 伝導度変調型半導体装置及びその製造方法
EP0199293B2 (de) * 1985-04-24 1995-08-30 General Electric Company Halbleiteranordnung mit isoliertem Gate
JPS6248073A (ja) * 1985-08-27 1987-03-02 Mitsubishi Electric Corp 半導体装置
JPH0715998B2 (ja) * 1985-08-27 1995-02-22 三菱電機株式会社 半導体装置
DE3628857A1 (de) * 1985-08-27 1987-03-12 Mitsubishi Electric Corp Halbleitereinrichtung
US4809045A (en) * 1985-09-30 1989-02-28 General Electric Company Insulated gate device
JPS62126668A (ja) * 1985-11-27 1987-06-08 Mitsubishi Electric Corp 半導体装置
JPH0821713B2 (ja) * 1987-02-26 1996-03-04 株式会社東芝 導電変調型ｍｏｓｆｅｔ
JPH0624244B2 (ja) * 1987-06-12 1994-03-30 株式会社日立製作所 複合半導体装置
JP2576173B2 (ja) * 1988-02-02 1997-01-29 日本電装株式会社 絶縁ゲート型半導体装置
DE58909474D1 (de) * 1988-02-24 1995-11-30 Siemens Ag Verfahren zur Herstellung eines durch Feldeffekt steuerbaren Bipolartransistors.
JPH07120799B2 (ja) * 1988-04-01 1995-12-20 株式会社日立製作所 半導体装置
JPH0247874A (ja) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Ｍｏｓ型半導体装置の製造方法
EP0409010A1 (de) * 1989-07-19 1991-01-23 Asea Brown Boveri Ag Abschaltbares Leistungshalbleiterbauelement
JP2752184B2 (ja) * 1989-09-11 1998-05-18 株式会社東芝 電力用半導体装置
GB8921596D0 (en) * 1989-09-25 1989-11-08 Lucas Ind Plc Mos gated bipolar devices
DE3942490C2 (de) * 1989-12-22 1994-03-24 Daimler Benz Ag Feldeffekt-gesteuertes Halbleiterbauelement
JP2808882B2 (ja) * 1990-05-07 1998-10-08 富士電機株式会社 絶縁ゲート型バイポーラトランジスタ
GB2255494B (en) * 1990-10-31 1995-07-05 Coffea Sa Apparatus and cartridge for preparing a liquid product
JPH0548111A (ja) * 1991-08-12 1993-02-26 Toshiba Corp 半導体装置およびその製造方法
JP2984478B2 (ja) * 1992-08-15 1999-11-29 株式会社東芝 伝導度変調型半導体装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2040657C3 (de) * 1970-08-17 1975-10-02 Siemens Ag, 1000 Berlin Und 8000 Muenchen Elektronischer Schalter für Halbleiterkoppelpunkte in Fernmelde-, insbesondere Fernsprechvermittlungsanlagen
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region

Also Published As

Publication number Publication date
DE3147075A1 (de) 1982-07-01
FR2495382A1 (fr) 1982-06-04
MX151412A (es) 1984-11-14
GB2088631A (en) 1982-06-09
FR2495382B1 (fr) 1988-04-29
SE8107136L (sv) 1982-06-03
IE812693L (en) 1982-06-02
JPS57120369A (en) 1982-07-27
GB2088631B (en) 1984-11-28
CH657230A5 (de) 1986-08-15

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