MX151412A - Un rectificador reforzado a compuerta mejorado - Google Patents
Un rectificador reforzado a compuerta mejoradoInfo
- Publication number
- MX151412A MX151412A MX190377A MX19037781A MX151412A MX 151412 A MX151412 A MX 151412A MX 190377 A MX190377 A MX 190377A MX 19037781 A MX19037781 A MX 19037781A MX 151412 A MX151412 A MX 151412A
- Authority
- MX
- Mexico
- Prior art keywords
- rectifier
- improved gate
- gate reinforced
- reinforced
- improved
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/152—Source regions of DMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21218180A | 1980-12-02 | 1980-12-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX151412A true MX151412A (es) | 1984-11-14 |
Family
ID=22789906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX190377A MX151412A (es) | 1980-12-02 | 1981-12-02 | Un rectificador reforzado a compuerta mejorado |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS57120369A (es) |
| CH (1) | CH657230A5 (es) |
| DE (1) | DE3147075A1 (es) |
| FR (1) | FR2495382B1 (es) |
| GB (1) | GB2088631B (es) |
| IE (1) | IE52758B1 (es) |
| MX (1) | MX151412A (es) |
| SE (1) | SE8107136L (es) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2524710B1 (fr) * | 1982-04-01 | 1986-03-14 | Gen Electric | Dispositif de commutation a semi-conducteur |
| DE3380136D1 (en) * | 1982-04-12 | 1989-08-03 | Gen Electric | Semiconductor device having a diffused region of reduced length and method of fabricating the same |
| JPS594077A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | 電界効果トランジスタ |
| JPS5927569A (ja) * | 1982-08-06 | 1984-02-14 | Hitachi Ltd | 半導体スイツチ素子 |
| CA1200322A (en) * | 1982-12-13 | 1986-02-04 | General Electric Company | Bidirectional insulated-gate rectifier structures and method of operation |
| EP0273030A3 (en) * | 1982-12-13 | 1988-09-21 | General Electric Company | Lateral insulated-gate rectifier structures |
| DE3482354D1 (de) * | 1983-02-04 | 1990-06-28 | Gen Electric | Elektrische schaltung eine hybride leistungsschalthalbleiteranordnung mit scr-struktur enthaltend. |
| JPS59211271A (ja) * | 1983-05-17 | 1984-11-30 | Toshiba Corp | 半導体装置 |
| JPS605568A (ja) * | 1983-06-23 | 1985-01-12 | Sanken Electric Co Ltd | 縦型絶縁ゲ−ト電界効果トランジスタ |
| EP0144654A3 (en) * | 1983-11-03 | 1987-10-07 | General Electric Company | Semiconductor device structure including a dielectrically-isolated insulated-gate transistor |
| US4618872A (en) * | 1983-12-05 | 1986-10-21 | General Electric Company | Integrated power switching semiconductor devices including IGT and MOSFET structures |
| JPS60174258U (ja) * | 1983-12-22 | 1985-11-19 | 株式会社明電舎 | 電界制御型半導体素子 |
| JPH0810763B2 (ja) * | 1983-12-28 | 1996-01-31 | 株式会社日立製作所 | 半導体装置 |
| JPH0618255B2 (ja) * | 1984-04-04 | 1994-03-09 | 株式会社東芝 | 半導体装置 |
| US4672407A (en) * | 1984-05-30 | 1987-06-09 | Kabushiki Kaisha Toshiba | Conductivity modulated MOSFET |
| JPS61185971A (ja) * | 1985-02-14 | 1986-08-19 | Toshiba Corp | 伝導度変調型半導体装置 |
| JPS61191071A (ja) * | 1985-02-20 | 1986-08-25 | Toshiba Corp | 伝導度変調型半導体装置及びその製造方法 |
| EP0199293B2 (en) * | 1985-04-24 | 1995-08-30 | General Electric Company | Insulated gate semiconductor device |
| JPS6248073A (ja) * | 1985-08-27 | 1987-03-02 | Mitsubishi Electric Corp | 半導体装置 |
| JPH0715998B2 (ja) * | 1985-08-27 | 1995-02-22 | 三菱電機株式会社 | 半導体装置 |
| DE3628857A1 (de) * | 1985-08-27 | 1987-03-12 | Mitsubishi Electric Corp | Halbleitereinrichtung |
| US4809045A (en) * | 1985-09-30 | 1989-02-28 | General Electric Company | Insulated gate device |
| JPS62126668A (ja) * | 1985-11-27 | 1987-06-08 | Mitsubishi Electric Corp | 半導体装置 |
| JPH0821713B2 (ja) * | 1987-02-26 | 1996-03-04 | 株式会社東芝 | 導電変調型ｍｏｓｆｅｔ |
| JPH0624244B2 (ja) * | 1987-06-12 | 1994-03-30 | 株式会社日立製作所 | 複合半導体装置 |
| JP2576173B2 (ja) * | 1988-02-02 | 1997-01-29 | 日本電装株式会社 | 絶縁ゲート型半導体装置 |
| DE58909474D1 (de) * | 1988-02-24 | 1995-11-30 | Siemens Ag | Verfahren zur Herstellung eines durch Feldeffekt steuerbaren Bipolartransistors. |
| JPH07120799B2 (ja) * | 1988-04-01 | 1995-12-20 | 株式会社日立製作所 | 半導体装置 |
| JPH0247874A (ja) * | 1988-08-10 | 1990-02-16 | Fuji Electric Co Ltd | Ｍｏｓ型半導体装置の製造方法 |
| EP0409010A1 (de) * | 1989-07-19 | 1991-01-23 | Asea Brown Boveri Ag | Abschaltbares Leistungshalbleiterbauelement |
| JP2752184B2 (ja) * | 1989-09-11 | 1998-05-18 | 株式会社東芝 | 電力用半導体装置 |
| GB8921596D0 (en) * | 1989-09-25 | 1989-11-08 | Lucas Ind Plc | Mos gated bipolar devices |
| DE3942490C2 (de) * | 1989-12-22 | 1994-03-24 | Daimler Benz Ag | Feldeffekt-gesteuertes Halbleiterbauelement |
| JP2808882B2 (ja) * | 1990-05-07 | 1998-10-08 | 富士電機株式会社 | 絶縁ゲート型バイポーラトランジスタ |
| GB2255494B (en) * | 1990-10-31 | 1995-07-05 | Coffea Sa | Apparatus and cartridge for preparing a liquid product |
| JPH0548111A (ja) * | 1991-08-12 | 1993-02-26 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP2984478B2 (ja) * | 1992-08-15 | 1999-11-29 | 株式会社東芝 | 伝導度変調型半導体装置及びその製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2040657C3 (de) * | 1970-08-17 | 1975-10-02 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Elektronischer Schalter für Halbleiterkoppelpunkte in Fernmelde-, insbesondere Fernsprechvermittlungsanlagen |
| US3831187A (en) * | 1973-04-11 | 1974-08-20 | Rca Corp | Thyristor having capacitively coupled control electrode |
| US4364073A (en) * | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
-
1981
- 1981-04-01 SE SE8107136A patent/SE8107136L/ not_active Application Discontinuation
- 1981-11-17 IE IE2693/81A patent/IE52758B1/en unknown
- 1981-11-24 GB GB8135419A patent/GB2088631B/en not_active Expired
- 1981-11-27 CH CH7616/81A patent/CH657230A5/de not_active IP Right Cessation
- 1981-11-27 DE DE19813147075 patent/DE3147075A1/de not_active Withdrawn
- 1981-11-30 JP JP56190983A patent/JPS57120369A/ja active Pending
- 1981-12-01 FR FR8122488A patent/FR2495382B1/fr not_active Expired
- 1981-12-02 MX MX190377A patent/MX151412A/es unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE3147075A1 (de) | 1982-07-01 |
| FR2495382A1 (fr) | 1982-06-04 |
| GB2088631A (en) | 1982-06-09 |
| FR2495382B1 (fr) | 1988-04-29 |
| SE8107136L (sv) | 1982-06-03 |
| IE812693L (en) | 1982-06-02 |
| JPS57120369A (en) | 1982-07-27 |
| IE52758B1 (en) | 1988-02-17 |
| GB2088631B (en) | 1984-11-28 |
| CH657230A5 (de) | 1986-08-15 |
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