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GB907942A - Improvements in or relating to transistors - Google Patents

Improvements in or relating to transistors

Info

Publication number
GB907942A
GB907942A GB40175/58A GB4017558A GB907942A GB 907942 A GB907942 A GB 907942A GB 40175/58 A GB40175/58 A GB 40175/58A GB 4017558 A GB4017558 A GB 4017558A GB 907942 A GB907942 A GB 907942A
Authority
GB
United Kingdom
Prior art keywords
base
emitter
zones
zone
ohm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB40175/58A
Inventor
Walter Fulop
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL276978D priority Critical patent/NL276978A/xx
Priority to BE560551D priority patent/BE560551A/xx
Priority to GB31526/57A priority patent/GB801443A/en
Priority to GB31527/57A priority patent/GB801444A/en
Priority to US681045A priority patent/US2939205A/en
Priority to FR1189146D priority patent/FR1189146A/en
Priority to CH357470D priority patent/CH357470A/en
Priority to GB40175/58A priority patent/GB907942A/en
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to FR802548A priority patent/FR76240E/en
Priority to DEI17331A priority patent/DE1158179B/en
Priority to US857983A priority patent/US3040219A/en
Priority to FR812288A priority patent/FR77060E/en
Priority to CH8166259A priority patent/CH377449A/en
Priority to BE585557A priority patent/BE585557A/en
Priority to FR893613A priority patent/FR81572E/en
Publication of GB907942A publication Critical patent/GB907942A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

907,942. Transistors. STANDARD TELEPHONES & CABLES Ltd. Dec. 11, 1959 [Dec. 12, 1958], No. 40175/58. Class 37. In a PNP or NPN drift transistor the emitter base breakdown voltage is increased by providing between the emitter and base zones an additional zone the maximum uncompensated impurity concentration in which is lower than that in the adjacent parts of the base and emitter zones. In a PNP or NPN drift transistor (Fig. 1) the uncompensated impurity concentration in the base zone is at a low value (resistivity of 20 ohm cm.) in part 4, rises to a high value (resistivity 1 ohm cm.) at the edge of this part and thence decreases across zone 3 to a low value (resistivity 6-30 ohm cm.) at the junction with collector zone 2. A germanium or silicon body containing the zones 4 and 3 is made by inward and outward diffusion techniques and the emitter and collector zones by subsequent alloying or diffusion processes. The base contact 5 is of ring form.
GB40175/58A 1956-09-05 1958-12-12 Improvements in or relating to transistors Expired GB907942A (en)

Priority Applications (15)

Application Number Priority Date Filing Date Title
NL276978D NL276978A (en) 1956-09-05
BE560551D BE560551A (en) 1956-09-05
GB31526/57A GB801443A (en) 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices
GB31527/57A GB801444A (en) 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices
US681045A US2939205A (en) 1956-09-05 1957-08-29 Semi-conductor devices
FR1189146D FR1189146A (en) 1956-09-05 1957-09-03 Improvements in the manufacture of electrical circuit elements using semiconductor bodies
CH357470D CH357470A (en) 1956-09-05 1957-09-05 Method of manufacturing semiconductor devices
GB40175/58A GB907942A (en) 1958-12-12 1958-12-12 Improvements in or relating to transistors
FR802548A FR76240E (en) 1956-09-05 1959-08-11 Improvements in the manufacture of electrical circuit elements using semiconductor bodies
DEI17331A DE1158179B (en) 1956-09-05 1959-12-04 Drift transistor and method for making it
US857983A US3040219A (en) 1956-09-05 1959-12-07 Transistors
FR812288A FR77060E (en) 1956-09-05 1959-12-07 Improvements in the manufacture of electrical circuit elements using semiconductor bodies
CH8166259A CH377449A (en) 1956-09-05 1959-12-10 transistor
BE585557A BE585557A (en) 1958-12-12 1959-12-11 Improvements in the manufacture of electrical circuit elements using semiconductor bodies.
FR893613A FR81572E (en) 1956-09-05 1962-04-06 Improvements in the manufacture of electrical circuit elements using semiconductor bodies

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB40175/58A GB907942A (en) 1958-12-12 1958-12-12 Improvements in or relating to transistors

Publications (1)

Publication Number Publication Date
GB907942A true GB907942A (en) 1962-10-10

Family

ID=10413571

Family Applications (1)

Application Number Title Priority Date Filing Date
GB40175/58A Expired GB907942A (en) 1956-09-05 1958-12-12 Improvements in or relating to transistors

Country Status (2)

Country Link
BE (1) BE585557A (en)
GB (1) GB907942A (en)

Also Published As

Publication number Publication date
BE585557A (en) 1960-06-13

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