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GB1229295A - - Google Patents

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Publication number
GB1229295A
GB1229295A GB1229295DA GB1229295A GB 1229295 A GB1229295 A GB 1229295A GB 1229295D A GB1229295D A GB 1229295DA GB 1229295 A GB1229295 A GB 1229295A
Authority
GB
United Kingdom
Prior art keywords
type
buried
diffused
region
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1229295A publication Critical patent/GB1229295A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

1,229,295. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 27 June, 1968 [30 June, 1967], No. 30769/68. Heading H1K. [Also in Division H3] The collector region 31 of an NPN transistor formed in a semi-conductor body comprising an N-type epitaxial layer 16 on an N-type substrate 11 is surrounded and isolated from the adjacent material by a buried P-type zone 18 formed by redistribution of impurities from a pre-diffused region at the substrate surface, and an annular P-type zone 12 diffused from the upper surface of the epitaxial layer 16 to meet the buried zone 18. The base and emitter regions 14, 15 are diffused into the collector region 31, which may also be provided with a low resistivity buried zone 35 formed by redistribution of pre-diffused impurities. The conductivity types may be reversed. In the embodiment a Si integrated circuit includes an NPN transistor as described above, a PNP transistor whose collector region includes a buried P-type zone 19, an N-channel PN-junction-gate field effect transistor having a buried P-type gate region 23 and a surface gate region 26, and a Zener diode having an abrupt junction between a buried P-type region 30 and a surface-diffused N-type region 29. Boron, phosphorus and arsenic are referred to as suitable dopants. A second embodiment comprises an integrated circuit containing an NPN transistor according to the invention, an N- channel field effect transistor and a diffused resistor.
GB1229295D 1967-06-30 1968-06-27 Expired GB1229295A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR112636 1967-06-30

Publications (1)

Publication Number Publication Date
GB1229295A true GB1229295A (en) 1971-04-21

Family

ID=8634223

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1229295D Expired GB1229295A (en) 1967-06-30 1968-06-27

Country Status (5)

Country Link
DE (1) DE1764579A1 (en)
FR (1) FR1559610A (en)
GB (1) GB1229295A (en)
NL (1) NL6808966A (en)
SE (1) SE331859B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0117867A1 (en) * 1982-08-26 1984-09-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
EP0807969A1 (en) * 1996-05-07 1997-11-19 Plessey Semiconductors Limited Semiconductor integrated circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2505102B1 (en) * 1981-04-29 1986-01-24 Radiotechnique Compelec DARLINGTON AMPLIFIER FORMED BY A FIELD EFFECT TRANSISTOR AND A BIPOLAR TRANSISTOR, AND ITS IMPLEMENTATION IN AN INTEGRATED SEMICONDUCTOR STRUCTURE

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0117867A1 (en) * 1982-08-26 1984-09-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
EP0117867A4 (en) * 1982-08-26 1985-04-23 Mitsubishi Electric Corp SEMICONDUCTOR ARRANGEMENT.
EP0807969A1 (en) * 1996-05-07 1997-11-19 Plessey Semiconductors Limited Semiconductor integrated circuit

Also Published As

Publication number Publication date
NL6808966A (en) 1968-12-31
DE1764579A1 (en) 1971-08-19
FR1559610A (en) 1969-03-14
SE331859B (en) 1971-01-18

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees