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GB1127161A - Improvements in or relating to diffused base transistors - Google Patents

Improvements in or relating to diffused base transistors

Info

Publication number
GB1127161A
GB1127161A GB50687/65A GB5068765A GB1127161A GB 1127161 A GB1127161 A GB 1127161A GB 50687/65 A GB50687/65 A GB 50687/65A GB 5068765 A GB5068765 A GB 5068765A GB 1127161 A GB1127161 A GB 1127161A
Authority
GB
United Kingdom
Prior art keywords
doping
thickness
zone
base zone
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB50687/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of GB1127161A publication Critical patent/GB1127161A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,127,161. Transistors. SIEMENS A.G. 30 Nov., 1965 [1 Dec., 1964], No. 50687/65. Heading H1K. In a transistor with a diffused base zone arid an alloyed or diffused emitter zone the portion of the base zone lying between the emitter and collector zones is produced by a multiple stage diffusion process, in at least one stage of which the semi-conductor surface is partially masked, so as to have a varying thickness or doping concentration along a line parallel to the emitter junction. In devices produced by mesa or planar techniques the thickness and/or doping may vary periodically as in Figs. 4 and 3 (not shown), respectively, or the thickness and doping may increase stepwise outwards from the centre of the emitter junction (Figs. 1, 2 and 5, not shown). The variations in doping and thickness, of the base zone are achieved by performing the diffusion in two or more stages with appropriate parts of the semi-conductor surface masked during at least one stage. The collector zone may in all cases comprise a heavily doped substrate of silicon or germanium with a thin high resistivity epitaxial layer in which the base zone is formed.
GB50687/65A 1964-12-01 1965-11-30 Improvements in or relating to diffused base transistors Expired GB1127161A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1964S0094398 DE1439481A1 (en) 1964-12-01 1964-12-01 transistor

Publications (1)

Publication Number Publication Date
GB1127161A true GB1127161A (en) 1968-09-11

Family

ID=7518673

Family Applications (1)

Application Number Title Priority Date Filing Date
GB50687/65A Expired GB1127161A (en) 1964-12-01 1965-11-30 Improvements in or relating to diffused base transistors

Country Status (7)

Country Link
AT (1) AT255492B (en)
CH (1) CH440463A (en)
DE (1) DE1439481A1 (en)
FR (1) FR1456281A (en)
GB (1) GB1127161A (en)
NL (1) NL6513639A (en)
SE (1) SE311046B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003046948A3 (en) * 2001-11-30 2004-04-22 Ihp Gmbh Bipolar semiconductor device and method for production thereof
CN114975652A (en) * 2022-07-25 2022-08-30 浙江晶科能源有限公司 Photovoltaic cell and manufacturing method thereof

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2088067A1 (en) * 1970-05-13 1972-01-07 Tsitovsky Ilya Semiconductor slice - with shaped p-n junctions
IT1205094B (en) * 1987-06-25 1989-03-10 Sgs Microelettronica Spa THIN EPITAXIAL LAYER SEMICONDUCTOR DEVICE INCLUDING A PLANAR BIPOLAR PLANAR TRANSISTOR OF THE VERTICAL PNP TYPE WITH BURDED LAYER WITH DIFFERENTIATED DRAWAGE
DE4035500A1 (en) * 1990-11-08 1992-05-14 Bosch Gmbh Robert ELECTRONIC SWITCH

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003046948A3 (en) * 2001-11-30 2004-04-22 Ihp Gmbh Bipolar semiconductor device and method for production thereof
CN114975652A (en) * 2022-07-25 2022-08-30 浙江晶科能源有限公司 Photovoltaic cell and manufacturing method thereof

Also Published As

Publication number Publication date
SE311046B (en) 1969-05-27
AT255492B (en) 1967-07-10
CH440463A (en) 1967-07-31
FR1456281A (en) 1966-10-21
DE1439481A1 (en) 1968-11-21
NL6513639A (en) 1966-06-02

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