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GB801444A - Semi-conductor devices and methods of manufacturing such devices - Google Patents

Semi-conductor devices and methods of manufacturing such devices

Info

Publication number
GB801444A
GB801444A GB31527/57A GB3152757A GB801444A GB 801444 A GB801444 A GB 801444A GB 31527/57 A GB31527/57 A GB 31527/57A GB 3152757 A GB3152757 A GB 3152757A GB 801444 A GB801444 A GB 801444A
Authority
GB
United Kingdom
Prior art keywords
lead
electrode
fused
passing
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB31527/57A
Inventor
Ronald Denis Sutherland
William Alan Catchpole
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB31527/57A priority Critical patent/GB801444A/en
Priority to GB31526/57A priority patent/GB801443A/en
Priority claimed from GB2711156A external-priority patent/GB801442A/en
Priority claimed from GB26120/58A external-priority patent/GB891934A/en
Publication of GB801444A publication Critical patent/GB801444A/en
Priority claimed from GB40175/58A external-priority patent/GB907942A/en
Priority claimed from GB1262761A external-priority patent/GB909377A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Fuses (AREA)
  • Thyristors (AREA)

Abstract

801,444. Transistors. STANDARD TELEPHONES & CABLES, Ltd. Sept. 5, 1956, No. 31527/57. Divided out of 801,442. Class 37. A method of fixing a lead to an electrode of a transistor comprises the steps of applying the lead to the electrode, passing a current between the lead and electrode so as to fuse the latter, pushing the lead into the molten electrode, cooling the electrode, applying a flux to the junction between the lead and the electrode, and then passing a further current to fuse the electrode to the lead. In one embodiment leads are fixed in this way to electrodes in the form of indium pellets 2, 3 which have been fused to opposite faces of an N-type germanium body 1 to form a PNP junction body by the method described in Specification 801,443. In an alternative embodiment the electrodes are lead or lead antimony pellets fused to a P-type body by the same method. It is possible to fix both leads in a single operation by using alternatingi currents passed between them via the semiconductor body. A base contact in the form of an open circle of gold-plated molybdenum, which is flash-plated with antimony if the body is N- type, is fused to the body about the indium pellet 2 by passing a current through it as described in Specification 801,442 from which the subjectmatter of the present Specification has been divided.
GB31527/57A 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices Expired GB801444A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB31527/57A GB801444A (en) 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices
GB31526/57A GB801443A (en) 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB31527/57A GB801444A (en) 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices
GB2711156A GB801442A (en) 1956-09-05 1956-09-05 Improvements in or relating to semi-conductor devices
GB26120/58A GB891934A (en) 1958-08-14 1958-08-14 Improvements in or relating to semi-conductor devices
GB40175/58A GB907942A (en) 1958-12-12 1958-12-12 Improvements in or relating to transistors
GB1262761A GB909377A (en) 1961-04-07 1961-04-07 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB801444A true GB801444A (en) 1958-09-17

Family

ID=27516115

Family Applications (2)

Application Number Title Priority Date Filing Date
GB31526/57A Expired GB801443A (en) 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices
GB31527/57A Expired GB801444A (en) 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB31526/57A Expired GB801443A (en) 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices

Country Status (1)

Country Link
GB (2) GB801443A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102421947B (en) 2009-03-09 2016-09-28 1366科技公司 From melting the method and apparatus that material manufactures film, semiconductor body

Also Published As

Publication number Publication date
GB801443A (en) 1958-09-17

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