GB8606388D0 - Junction field-effect transistor - Google Patents

Junction field-effect transistor

Info

Publication number: GB8606388D0
Authority: GB; United Kingdom
Prior art keywords: effect transistor; junction field; junction; field; transistor
Prior art date: 1985-03-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

GB868606388A

Other versions

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Standard Electric Corp

Original Assignee

International Standard Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-03-20

Filing date

1986-03-14

Publication date

1986-04-23

1986-03-14 Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp

1986-04-23 Publication of GB8606388D0 publication Critical patent/GB8606388D0/en

1986-09-24 Publication of GB2172747A publication Critical patent/GB2172747A/en

Status Withdrawn legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/051—Manufacture or treatment of FETs having PN junction gates
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

GB08606388A 1985-03-20 1986-03-14 Junction field-effect transistor with self-aligning gate Withdrawn GB2172747A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE19853509963 DE3509963A1 (en)	1985-03-20	1985-03-20	JUNCTION FIELD EFFECT TRANSISTOR WITH SELF-ADJUSTING GATE

Publications (2)

Publication Number	Publication Date
GB8606388D0 true GB8606388D0 (en)	1986-04-23
GB2172747A GB2172747A (en)	1986-09-24

Family

ID=6265729

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB08606388A Withdrawn GB2172747A (en)	1985-03-20	1986-03-14	Junction field-effect transistor with self-aligning gate

Country Status (3)

Country	Link
JP (1)	JPS61258480A (en)
DE (1)	DE3509963A1 (en)
GB (1)	GB2172747A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20060009038A1 (en)	2004-07-12	2006-01-12	International Business Machines Corporation	Processing for overcoming extreme topography
AU2006317517A1 (en) *	2005-11-24	2007-05-31	Newsouth Innovations Pty Limited	High efficiency solar cell fabrication
JP2008218461A (en) *	2007-02-28	2008-09-18	Sony Corp	Manufacturing method of field effect transistor, field effect transistor, semiconductor device equipped with the field effect transistor and communication apparatus

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2120388A1 (en) *	1970-04-28	1971-12-16	Agency Ind Science Techn	Compound semiconductor device
US3975752A (en) *	1973-04-04	1976-08-17	Harris Corporation	Junction field effect transistor
JPS565626B2 (en) *	1973-07-24	1981-02-05
JPS5712562A (en) *	1980-06-26	1982-01-22	Mitsubishi Electric Corp	Recess gate type field effect transistor
EP0067566A3 (en) *	1981-06-13	1985-08-07	Plessey Overseas Limited	Integrated light detection or generation means and amplifying means
JPS58105577A (en) *	1981-12-18	1983-06-23	Oki Electric Ind Co Ltd	Preparation of semiconductor device
JPS59121981A (en) *	1982-12-28	1984-07-14	Fujitsu Ltd	Manufacturing method of semiconductor device
JPS59165461A (en) *	1983-03-10	1984-09-18	Oki Electric Ind Co Ltd	Method for manufacturing Schottky junction compound semiconductor field effect transistor
FR2550888B1 (en) *	1983-08-17	1985-10-11	Thomson Csf	ULTRA-SHORT GRID FIELD-EFFECT TRANSISTOR WITH HORIZONTAL STRUCTURE, AND MANUFACTURING METHOD THEREOF
FR2555815B1 (en) *	1983-11-25	1986-08-29	Thomson Csf	FIELD EFFECT POWER TRANSISTOR, AND METHOD FOR PRODUCING THE SAME

1985
- 1985-03-20 DE DE19853509963 patent/DE3509963A1/en not_active Withdrawn
1986
- 1986-03-14 GB GB08606388A patent/GB2172747A/en not_active Withdrawn
- 1986-03-20 JP JP61063854A patent/JPS61258480A/en active Pending

Also Published As

Publication number	Publication date
JPS61258480A (en)	1986-11-15
GB2172747A (en)	1986-09-24
DE3509963A1 (en)	1986-09-25

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Legal Events

Date	Code	Title	Description
1987-10-21	732	Registration of transactions, instruments or events in the register (sect. 32/1977)
1990-01-10	WAP	Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)