GB2108758B - Power field-effect transistor structures - Google Patents

Power field-effect transistor structures

Info

Publication number: GB2108758B
Authority: GB; United Kingdom
Prior art keywords: effect transistor; power field; transistor structures; structures; power
Prior art date: 1981-10-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB08228337A

Other versions

GB2108758A (en

Inventor

Nathan Zommer

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Intersil Corp

Original Assignee

Intersil Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-10-26

Filing date

1982-10-05

Publication date

1985-08-21

1982-10-05 Application filed by Intersil Inc filed Critical Intersil Inc

1983-05-18 Publication of GB2108758A publication Critical patent/GB2108758A/en

1985-08-21 Application granted granted Critical

1985-08-21 Publication of GB2108758B publication Critical patent/GB2108758B/en

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs

GB08228337A 1981-10-26 1982-10-05 Power field-effect transistor structures Expired GB2108758B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US31480081A	1981-10-26	1981-10-26

Publications (2)

Publication Number	Publication Date
GB2108758A GB2108758A (en)	1983-05-18
GB2108758B true GB2108758B (en)	1985-08-21

Family

ID=23221492

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB08228337A Expired GB2108758B (en)	1981-10-26	1982-10-05	Power field-effect transistor structures

Country Status (4)

Country	Link
JP (1)	JPS5882574A (en)
DE (1)	DE3239204A1 (en)
FR (1)	FR2515429B1 (en)
GB (1)	GB2108758B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4833513A (en) *	1985-01-20	1989-05-23	Tdk Corporation	MOS FET semiconductor device having a cell pattern arrangement for optimizing channel width
US5317184A (en) *	1992-11-09	1994-05-31	Harris Corporation	Device and method for improving current carrying capability in a semiconductor device
EP0823735A1 (en) *	1996-08-05	1998-02-11	Sgs-Thomson Microelectronics S.A.	MOS-technology power device
JP2006339516A (en)	2005-06-03	2006-12-14	Rohm Co Ltd	Semiconductor device and manufacturing method thereof
CN110676317B (en) *	2019-09-30	2022-10-11	福建省福联集成电路有限公司	Transistor tube core structure and manufacturing method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4055884A (en) *	1976-12-13	1977-11-01	International Business Machines Corporation	Fabrication of power field effect transistors and the resulting structures
FR2460542A1 (en) *	1979-06-29	1981-01-23	Thomson Csf	VERTICAL POWER FIELD EFFECT TRANSISTOR FOR HIGH FREQUENCIES AND METHOD OF MAKING SUCH A TRANSISTOR
FR2461360A1 (en) *	1979-07-10	1981-01-30	Thomson Csf	METHOD FOR MANUFACTURING A VERTICALLY OPERATING DMOS-TYPE FIELD EFFECT TRANSISTOR AND TRANSISTOR OBTAINED THEREBY
US4364073A (en) *	1980-03-25	1982-12-14	Rca Corporation	Power MOSFET with an anode region

1982
- 1982-10-05 GB GB08228337A patent/GB2108758B/en not_active Expired
- 1982-10-22 DE DE19823239204 patent/DE3239204A1/en active Granted
- 1982-10-25 FR FR8217784A patent/FR2515429B1/en not_active Expired
- 1982-10-25 JP JP57187341A patent/JPS5882574A/en active Pending

Also Published As

Publication number	Publication date
DE3239204C2 (en)	1987-07-23
FR2515429A1 (en)	1983-04-29
JPS5882574A (en)	1983-05-18
DE3239204A1 (en)	1983-05-19
GB2108758A (en)	1983-05-18
FR2515429B1 (en)	1986-09-26

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Legal Events

Date	Code	Title	Description
1989-06-01	PCNP	Patent ceased through non-payment of renewal fee