GB2228141A - P-N-P Diamond transistor - Google Patents
P-N-P Diamond transistor Download PDFInfo
- Publication number
- GB2228141A GB2228141A GB8912354A GB8912354A GB2228141A GB 2228141 A GB2228141 A GB 2228141A GB 8912354 A GB8912354 A GB 8912354A GB 8912354 A GB8912354 A GB 8912354A GB 2228141 A GB2228141 A GB 2228141A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistor
- type
- substrate
- diamond
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 29
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 20
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052796 boron Inorganic materials 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 6
- 239000011574 phosphorus Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000370 acceptor Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000002775 capsule Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 238000010348 incorporation Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/8303—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/60—Lateral BJTs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Bipolar Transistors (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
A P-N-P diamond transistor (10) comprises a diamond substrate (12) having two p-type semiconducting regions (14) separated by an insulating region (16) with an n-type semiconducting layer (18) established by chemical vapour deposition. Preferably the p-type regions (14) are obtained by doping with boron and controlling the concentration of nitrogen impurities by the use of nitrogen getters. The n-type layer (18) preferably contains phosphorus. <IMAGE>
Description
P-N-P DIAMOND TRANSISTOR
The present invention relates to a P-N-P diamond transistor and a method of manufacture thereof.
It is known that although most synthetic diamonds contain impurities such as nitrogen, such impurities do not result in semiconduction at normal temperatures and pressures. Formation of semiconducting diamond materials has been achieved by doping with boron at extremely high pressures. There has not, however. been any known proposal to form a P-N-P diamond transistor of simple construction and relatively straightforward manufacture. The present invention seeks to provide a transistor and a method of manufacture thereof which can meet these requirements.
According to a first aspect of the present invention there is provided a method of manufacturing a transistor comprising the steps of: providing a diamond substrate, doping two separate regions of the substrate with a p-type impurity to produce respective semiconducting regions. and using chemical vapour deposition to provide an n-type layer of semiconducting diamond. whereby a
P-N-P transistor structure is obtained.
According to a second aspect of the present invention there is provided a transitor comprising; a diamond substrate having two p-type semiconducting regions separated by an insulating region, and an n-type semiconducting layer established by chemical vapour deposition, whereby a P-N-P structure is formed.
Beneficially the p-type regions contain boron.
Advantageously the n-type layer contains phosphorus.
Preferably, nitrogen getters are introduced in the reaction mass to control the nitrogen donor content of the substrate which in turn affects the number of uncompensated boron acceptors.
An embodiment of the present invention will now be described by way of example only and with reference to the accompanying drawing which is a diagrammatic illustration of a section through a transistor manufactured in accordance with the present invention.
As illustrated in the drawing, the transistor 10 comprises a diamond substrate 12 having two p-type semiconducting regions 14 separated by an insulating region 16. An n-type semiconducting layer 18 is established by chemical vapour deposition so as to contact the p-type regions 14 and form a P-N-P structure. Respective electrical contacts 20 are bonded to the p-type regions 14 and the n-type layer 18. Thus, a P-N-P diamond transistor is achieved.
Most synthetic diamonds contain nitrogen as impurities in the form of isolated nitrogen atoms substituting for carbon in the diamond lattice. Each nitrogen atom has one more electron than is necessary to satisfy the covalent bonding requirements of the diamond lattice so that there is a donor energy level in the band gap between the valence band and the conducting band. The position of the donor level is too deep in energy below the conduction band to give rise to n-type electrical semiconduction at realistic temperatures so the diamond remains an electrical insulator.
In general, synthetic diamonds (both self-nucleated diamond grit and larger, seed-grown diamonds grown by the temperature-gradient technique) have a cubo-octahedral morphology, often modified by minor #llOi and C113) facets. The concentration of isolated substitutional nitrogen is different in the different types of growth sector, being highest for #1l1i (i.e. octahedral) sectors, lower for {lOOl (i.e. cube) sectors, lower still for t113) (i.e.
trapezoidal) sectors and lowest for #11OJ (i.e.
dodecahedral) sectors. It has been found that the total amount of nitrogen in a synthtic diamond can be controlled by the incorporation of nitrogen getters into the synthesis capsule.
Provided that the total nitrogen concentration is sufficiently low, doping the synthesis capsule with a small amount of boron will produce p-type semiconducting diamond. Boron is taken up preferentially by t sectors, then by t11O} sectors and by a smaller amount by #1OOJ and 1113) sectors. However, the boron acceptor defects are usually compensated by nitrogen donor defects. P-type semiconduction results only from uncompensated boron defects, i.e. when the boron concentration is greater than the nitrogen concentration. It has been found that by controlling the amount of nitrogen getter and boron additive in the synthesis capsule, it is possible to grow diamonds with sectors of p-type semiconducting material between sectors of insulating material.
Although nitrogen defects do not produce n-type semiconduction at realistic temperatures, the incorporation of phosphorus atoms into diamond could lead to n-type semiconduction. In practice, attempts to produce n-type semiconducting diamond by doping a high-pressure synthesis capsule with phosphorus have been unsuccessful. This invention recognises that n-type semiconducting diamond can be obtained using the technique of chemical vapour depositon (CVD). Phosphorus may be used as the CVD dopant.
One embodiment of the invention has been described with reference to the accompanying drawing. However. it will be readily apparent to those skilled in the art, from a review of the above description, that various modifications may be made within the scope of the invention.
Claims (12)
1. A method of manufacturing a transistor comprising the steps of:
providing a diamond substrate,
doping two separate regions of the substrate with a p-type impurity to form respective semiconducting regions, and
using chemical vapour deposition to provide an n-type layer of semiconducting diamond, whereby a P-N-P transistor structure is obtained.
2. A method as claimed in claim 1, wherein said n-type layer contains phosphorus.
3. A method as claimed in claim 1 or 2, wherein said p-type impurity is boron.
4. A method as claimed in any preceding claim, further including the step of introducing nitrogen getters to control the nitrogen donor content of the substrate so as to control the number of uncompensated boron acceptors
5. A method as claimed in claim 4, wherein said step of introducing nitrogen getters includes controlling the nitrogen donor content of the substrate such that the p-type semiconductor regions are separated by an insulating region.
6. A transistor comprising; a diamond substrate having two p-type semiconducting regions, and an n-type semiconducting layer established by chemical vapour deposition, whereby a P-N-P structure is formed.
7. A transistor as claimed in claim 6, wherein the n-type layer contains phosphorus.
8. A transistor as claimed in claim 6 or 7, wherein the p-type regions contain boron.
9. A transistor as claimed in any of claims 6-8, wherein the number of uncompensated boron acceptors in the substrate has been reduced by control of the nitrogen donor content of the substrate.
10. A transistor as claimed in claim 9, wherein the number of uncompensated boron acceptors in the substrate is such that the p-type semiconducting regions are separated by an insulating region.
11. A method of manufacturing a P-N-P transistor substantially as hereinbefore described with reference to the accompanying drawing.
12. A P-N-P transistor substantially as hereinbefore described with reference to and as illustrated in the accompanying drawing.
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/721,558 US5177585A (en) | 1989-02-01 | 1990-02-01 | P-n-p diamond transistor |
| AU49619/90A AU630663B2 (en) | 1989-02-01 | 1990-02-01 | P-n-p diamond transistor |
| EP90902330A EP0456682B1 (en) | 1989-02-01 | 1990-02-01 | P-n-p diamond transistor |
| CA002046284A CA2046284C (en) | 1989-02-01 | 1990-02-01 | P-n-p diamond transistor |
| DE69014861T DE69014861T2 (en) | 1989-02-01 | 1990-02-01 | P-N-P DIAMOND TRANSISTOR. |
| PCT/GB1990/000143 WO1990009033A1 (en) | 1989-02-01 | 1990-02-01 | P-n-p diamond transistor |
| KR1019910700819A KR0146039B1 (en) | 1989-02-01 | 1990-02-01 | P-n-p diamond transistor |
| JP2502686A JP2557567B2 (en) | 1989-02-01 | 1990-02-01 | P-NP diamond transistor and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB898902135A GB8902135D0 (en) | 1989-02-01 | 1989-02-01 | P-n-p diamond transistor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB8912354D0 GB8912354D0 (en) | 1989-07-12 |
| GB2228141A true GB2228141A (en) | 1990-08-15 |
| GB2228141B GB2228141B (en) | 1992-11-18 |
Family
ID=10650914
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB898902135A Pending GB8902135D0 (en) | 1989-02-01 | 1989-02-01 | P-n-p diamond transistor |
| GB8912354A Expired - Fee Related GB2228141B (en) | 1989-02-01 | 1989-05-30 | P-n-p diamond transistor |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB898902135A Pending GB8902135D0 (en) | 1989-02-01 | 1989-02-01 | P-n-p diamond transistor |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR0146039B1 (en) |
| GB (2) | GB8902135D0 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2252202A (en) * | 1991-01-28 | 1992-07-29 | Kobe Steel Ltd | Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer |
| GB2317399A (en) * | 1996-09-03 | 1998-03-25 | Nat Inst Res Inorganic Mat | Phosphorus-doped diamond |
-
1989
- 1989-02-01 GB GB898902135A patent/GB8902135D0/en active Pending
- 1989-05-30 GB GB8912354A patent/GB2228141B/en not_active Expired - Fee Related
-
1990
- 1990-02-01 KR KR1019910700819A patent/KR0146039B1/en not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2252202A (en) * | 1991-01-28 | 1992-07-29 | Kobe Steel Ltd | Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer |
| GB2252202B (en) * | 1991-01-28 | 1994-12-14 | Kobe Steel Ltd | Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer and method of making same |
| GB2317399A (en) * | 1996-09-03 | 1998-03-25 | Nat Inst Res Inorganic Mat | Phosphorus-doped diamond |
| US5961717A (en) * | 1996-09-03 | 1999-10-05 | National Institute For Research In Inorganic Materials | Synthesis of phosphorus-doped diamond |
| GB2317399B (en) * | 1996-09-03 | 2000-05-10 | Nat Inst Res Inorganic Mat | Synthesis of phosphorus-doped diamond |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8902135D0 (en) | 1989-03-22 |
| GB8912354D0 (en) | 1989-07-12 |
| GB2228141B (en) | 1992-11-18 |
| KR0146039B1 (en) | 1998-11-02 |
| KR920702015A (en) | 1992-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8097524B2 (en) | Lightly doped silicon carbide wafer and use thereof in high power devices | |
| KR100913401B1 (en) | Diamond semiconductor element and method for manufacturing same | |
| JPH0697666B2 (en) | Semiconductor device structure using multi-level epitaxial structure and manufacturing method thereof | |
| EP1739727A2 (en) | Composite structure comprising a silicon carbide layer and method of making it | |
| KR970053503A (en) | Semiconductor device having a gate electrode and a shallow impurity region that eliminates short circuit between source and drain regions and process for manufacturing same | |
| JP6757357B2 (en) | Semiconductor heterostructure and its formation method | |
| EP3141635B1 (en) | Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer | |
| WO2014008453A2 (en) | Controlled epitaxial boron nitride growth for graphene based transistors | |
| US6744079B2 (en) | Optimized blocking impurity placement for SiGe HBTs | |
| JPH04502536A (en) | Fast recovery high temperature rectifier diode formed in silicon carbide | |
| US5177585A (en) | P-n-p diamond transistor | |
| US3765960A (en) | Method for minimizing autodoping in epitaxial deposition | |
| GB2228141A (en) | P-N-P Diamond transistor | |
| JPS6270295A (en) | Manufacturing method of n-type semiconductor diamond film | |
| US4939102A (en) | Method of growing III-V semiconductor layers with high effective hole concentration | |
| KR20130113308A (en) | Silicon epitaxial wafer and method for producing same | |
| JPH07105353B2 (en) | Semiconductor diamond and method for manufacturing the same | |
| JP2645439B2 (en) | Semiconductor diamond and its manufacturing method | |
| Benchimol et al. | Carbon doping of GaAs for heterojunction bipolar transistors: a comparison between MBE and CBE | |
| JP6578994B2 (en) | Semiconductor substrate composed of silicon carbide and method of manufacturing the same | |
| JPH0777205B2 (en) | Semiconductor diamond and method for manufacturing the same | |
| JPH0722327A (en) | Compound semiconductor device and manufacturing method therefor | |
| Lebedev | Irradiation as a possible method for producing SiC heterostructures | |
| JPH02244677A (en) | diamond semiconductor equipment | |
| JPH07211642A (en) | Vapor phase epitaxial growth method for compound semiconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20060530 |