GB8902135D0 - P-n-p diamond transistor - Google Patents

P-n-p diamond transistor

Info

Publication number: GB8902135D0
Authority: GB; United Kingdom
Prior art keywords: diamond transistor; diamond; transistor
Prior art date: 1989-02-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

GB898902135A

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

DIAMOND TRADING Co PROPRI

Original Assignee

DIAMOND TRADING Co PROPRI

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-02-01

Filing date

1989-02-01

Publication date

1989-03-22

1989-02-01 Application filed by DIAMOND TRADING Co PROPRI filed Critical DIAMOND TRADING Co PROPRI

1989-02-01 Priority to GB898902135A priority Critical patent/GB8902135D0/en

1989-03-22 Publication of GB8902135D0 publication Critical patent/GB8902135D0/en

1989-05-30 Priority to GB8912354A priority patent/GB2228141B/en

1990-02-01 Priority to DE69014861T priority patent/DE69014861T2/en

1990-02-01 Priority to CA002046284A priority patent/CA2046284C/en

1990-02-01 Priority to US07/721,558 priority patent/US5177585A/en

1990-02-01 Priority to KR1019910700819A priority patent/KR0146039B1/en

1990-02-01 Priority to JP2502686A priority patent/JP2557567B2/en

1990-02-01 Priority to AU49619/90A priority patent/AU630663B2/en

1990-02-01 Priority to PCT/GB1990/000143 priority patent/WO1990009033A1/en

1990-02-01 Priority to EP90902330A priority patent/EP0456682B1/en

Status Pending legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/8303—Diamond
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/60—Lateral BJTs

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Carbon And Carbon Compounds (AREA)
Bipolar Transistors (AREA)

GB898902135A 1989-02-01 1989-02-01 P-n-p diamond transistor Pending GB8902135D0 (en)

Priority Applications (10)

Application Number	Priority Date	Filing Date	Title
GB898902135A GB8902135D0 (en)	1989-02-01	1989-02-01	P-n-p diamond transistor
GB8912354A GB2228141B (en)	1989-02-01	1989-05-30	P-n-p diamond transistor
EP90902330A EP0456682B1 (en)	1989-02-01	1990-02-01	P-n-p diamond transistor
US07/721,558 US5177585A (en)	1989-02-01	1990-02-01	P-n-p diamond transistor
CA002046284A CA2046284C (en)	1989-02-01	1990-02-01	P-n-p diamond transistor
DE69014861T DE69014861T2 (en)	1989-02-01	1990-02-01	P-N-P DIAMOND TRANSISTOR.
KR1019910700819A KR0146039B1 (en)	1989-02-01	1990-02-01	P-n-p diamond transistor
JP2502686A JP2557567B2 (en)	1989-02-01	1990-02-01	P-NP diamond transistor and method of manufacturing the same
AU49619/90A AU630663B2 (en)	1989-02-01	1990-02-01	P-n-p diamond transistor
PCT/GB1990/000143 WO1990009033A1 (en)	1989-02-01	1990-02-01	P-n-p diamond transistor

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB898902135A GB8902135D0 (en)	1989-02-01	1989-02-01	P-n-p diamond transistor

Publications (1)

Publication Number	Publication Date
GB8902135D0 true GB8902135D0 (en)	1989-03-22

Family

ID=10650914

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
GB898902135A Pending GB8902135D0 (en)	1989-02-01	1989-02-01	P-n-p diamond transistor
GB8912354A Expired - Fee Related GB2228141B (en)	1989-02-01	1989-05-30	P-n-p diamond transistor

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
GB8912354A Expired - Fee Related GB2228141B (en)	1989-02-01	1989-05-30	P-n-p diamond transistor

Country Status (2)

Country	Link
KR (1)	KR0146039B1 (en)
GB (2)	GB8902135D0 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5173761A (en) *	1991-01-28	1992-12-22	Kobe Steel Usa Inc., Electronic Materials Center	Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer
JP3051912B2 (en) *	1996-09-03	2000-06-12	科学技術庁無機材質研究所長	Synthesis method of phosphorus-doped diamond

1989
- 1989-02-01 GB GB898902135A patent/GB8902135D0/en active Pending
- 1989-05-30 GB GB8912354A patent/GB2228141B/en not_active Expired - Fee Related
1990
- 1990-02-01 KR KR1019910700819A patent/KR0146039B1/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
KR0146039B1 (en)	1998-11-02
KR920702015A (en)	1992-08-12
GB8912354D0 (en)	1989-07-12
GB2228141A (en)	1990-08-15
GB2228141B (en)	1992-11-18

Publication	Publication Date	Title
EP0457508A3 (en)	1992-03-25	Diamond semiconductor device
EP0247386A3 (en)	1988-03-16	Lateral transistor
GB2237446B (en)	1993-07-07	Semi-conductor device
EP0306258A3 (en)	1989-10-18	Transistor
EP0454736A4 (en)	1993-05-12	Fibrinolysis
GB8819748D0 (en)	1988-09-21	Transistor
SG67297A1 (en)	1999-09-21	Semiconductor device
GB2228826B (en)	1993-01-27	Semiconductor device
GB8901342D0 (en)	1989-03-15	Semiconductor device
EP0405564A3 (en)	1991-07-17	Field effect transistor
EP0412772A3 (en)	1991-10-09	Semi-conductor device
GB2228141B (en)	1992-11-18	P-n-p diamond transistor
EP0415318A3 (en)	1992-05-27	Semiconductor device
KR0130643B1 (en)	1998-04-06	Lateral-type semiconductor device
ZA891546B (en)	1989-11-29	Gas-fluxing stone
GB8914554D0 (en)	1989-08-16	Semiconductor device
EP0421404A3 (en)	1992-12-02	Semiconductor device
EP0405501A3 (en)	1991-07-24	Semiconductor device
EP0392461A3 (en)	1990-10-31	Semiconductor device prepared from diamond
GB2239735B (en)	1993-08-25	Velocity-modulation transistor
GB8913070D0 (en)	1989-07-26	Semiconductor device
GB8908219D0 (en)	1989-09-20	Semiconductor device manufacture
EP0389964A3 (en)	1990-12-19	Bridged-emitter doped-silicide transistor
GB8619426D0 (en)	1986-09-17	Transistor
GB8923956D0 (en)	1989-12-13	Sinks