GB2044998A - Linear semiconductor resistor - Google Patents
Linear semiconductor resistor Download PDFInfo
- Publication number
- GB2044998A GB2044998A GB8008322A GB8008322A GB2044998A GB 2044998 A GB2044998 A GB 2044998A GB 8008322 A GB8008322 A GB 8008322A GB 8008322 A GB8008322 A GB 8008322A GB 2044998 A GB2044998 A GB 2044998A
- Authority
- GB
- United Kingdom
- Prior art keywords
- resistance
- layer
- isolation layer
- resistor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000002955 isolation Methods 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 12
- 239000002800 charge carrier Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 4
- 239000003574 free electron Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/66—Digital/analogue converters
- H03M1/74—Simultaneous conversion
- H03M1/78—Simultaneous conversion using ladder network
- H03M1/785—Simultaneous conversion using ladder network using resistors, i.e. R-2R ladders
Landscapes
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2182979A | 1979-03-19 | 1979-03-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2044998A true GB2044998A (en) | 1980-10-22 |
Family
ID=21806386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8008322A Withdrawn GB2044998A (en) | 1979-03-19 | 1980-03-12 | Linear semiconductor resistor |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS55146957A (de) |
| CA (1) | CA1122721A (de) |
| DE (1) | DE3009042A1 (de) |
| FR (1) | FR2452180A1 (de) |
| GB (1) | GB2044998A (de) |
| SE (1) | SE8002073L (de) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2457606A1 (fr) * | 1979-05-23 | 1980-12-19 | Suwa Seikosha Kk | Circuit de detection et de compensation de temperature pour une montre |
| EP0066041A1 (de) * | 1981-03-30 | 1982-12-08 | Kabushiki Kaisha Toshiba | Halbleitervorrichtung mit Widerstandselementen |
| EP0285440A2 (de) * | 1987-03-31 | 1988-10-05 | Kabushiki Kaisha Toshiba | Diffundierte Widerstandsschaltung |
| WO2003084063A1 (en) * | 2002-03-28 | 2003-10-09 | Hrl Laboratories, Llc | High-efficiency, high output drive current switch with application to digital to analog conversion |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58141551A (ja) * | 1982-02-17 | 1983-08-22 | Nec Corp | 半導体装置 |
| JPS59229857A (ja) * | 1983-06-07 | 1984-12-24 | Rohm Co Ltd | 抵抗回路 |
| JPS60139306U (ja) * | 1984-02-25 | 1985-09-14 | 株式会社村田製作所 | 同軸共振器を用いた高周波装置 |
| DE3443773A1 (de) * | 1984-11-30 | 1986-06-05 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithisch integrierter spannungsteiler |
| DE3526461A1 (de) * | 1985-07-24 | 1987-01-29 | Telefunken Electronic Gmbh | Widerstandskette |
| JPS61172364A (ja) * | 1985-09-27 | 1986-08-04 | Nec Corp | 定電圧回路を形成した半導体装置 |
| JPH0434173Y2 (de) * | 1987-10-27 | 1992-08-14 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2351505A1 (fr) * | 1976-05-13 | 1977-12-09 | Ibm France | Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees |
-
1980
- 1980-03-08 DE DE19803009042 patent/DE3009042A1/de not_active Withdrawn
- 1980-03-12 GB GB8008322A patent/GB2044998A/en not_active Withdrawn
- 1980-03-17 SE SE8002073A patent/SE8002073L/xx unknown
- 1980-03-18 CA CA347,882A patent/CA1122721A/en not_active Expired
- 1980-03-18 JP JP3468380A patent/JPS55146957A/ja active Granted
- 1980-03-18 FR FR8006016A patent/FR2452180A1/fr active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2457606A1 (fr) * | 1979-05-23 | 1980-12-19 | Suwa Seikosha Kk | Circuit de detection et de compensation de temperature pour une montre |
| EP0066041A1 (de) * | 1981-03-30 | 1982-12-08 | Kabushiki Kaisha Toshiba | Halbleitervorrichtung mit Widerstandselementen |
| EP0285440A2 (de) * | 1987-03-31 | 1988-10-05 | Kabushiki Kaisha Toshiba | Diffundierte Widerstandsschaltung |
| EP0285440A3 (de) * | 1987-03-31 | 1990-12-12 | Kabushiki Kaisha Toshiba | Diffundierte Widerstandsschaltung |
| US5111068A (en) * | 1987-03-31 | 1992-05-05 | Kabushiki Kaisha Toshiba | Diffusion resistor circuit |
| WO2003084063A1 (en) * | 2002-03-28 | 2003-10-09 | Hrl Laboratories, Llc | High-efficiency, high output drive current switch with application to digital to analog conversion |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1122721A (en) | 1982-04-27 |
| JPS55146957A (en) | 1980-11-15 |
| JPS6356707B2 (de) | 1988-11-09 |
| SE8002073L (sv) | 1980-09-20 |
| FR2452180A1 (fr) | 1980-10-17 |
| DE3009042A1 (de) | 1980-10-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |