CA1122721A - Linear semiconductor resistor - Google Patents
Linear semiconductor resistorInfo
- Publication number
- CA1122721A CA1122721A CA347,882A CA347882A CA1122721A CA 1122721 A CA1122721 A CA 1122721A CA 347882 A CA347882 A CA 347882A CA 1122721 A CA1122721 A CA 1122721A
- Authority
- CA
- Canada
- Prior art keywords
- resistance
- layer
- isolation layer
- resistor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/66—Digital/analogue converters
- H03M1/74—Simultaneous conversion
- H03M1/78—Simultaneous conversion using ladder network
- H03M1/785—Simultaneous conversion using ladder network using resistors, i.e. R-2R ladders
Landscapes
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2182979A | 1979-03-19 | 1979-03-19 | |
US021,829 | 1979-03-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1122721A true CA1122721A (en) | 1982-04-27 |
Family
ID=21806386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA347,882A Expired CA1122721A (en) | 1979-03-19 | 1980-03-18 | Linear semiconductor resistor |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS55146957A (de) |
CA (1) | CA1122721A (de) |
DE (1) | DE3009042A1 (de) |
FR (1) | FR2452180A1 (de) |
GB (1) | GB2044998A (de) |
SE (1) | SE8002073L (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2054997B (en) * | 1979-05-23 | 1984-01-18 | Suwa Seikosha Kk | Temperature detecting circuit |
JPS57162356A (en) * | 1981-03-30 | 1982-10-06 | Toshiba Corp | Integrated circuit device |
JPS58141551A (ja) * | 1982-02-17 | 1983-08-22 | Nec Corp | 半導体装置 |
JPS59229857A (ja) * | 1983-06-07 | 1984-12-24 | Rohm Co Ltd | 抵抗回路 |
JPS60139306U (ja) * | 1984-02-25 | 1985-09-14 | 株式会社村田製作所 | 同軸共振器を用いた高周波装置 |
DE3443773A1 (de) * | 1984-11-30 | 1986-06-05 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithisch integrierter spannungsteiler |
DE3526461A1 (de) * | 1985-07-24 | 1987-01-29 | Telefunken Electronic Gmbh | Widerstandskette |
JPS61172364A (ja) * | 1985-09-27 | 1986-08-04 | Nec Corp | 定電圧回路を形成した半導体装置 |
JPS63244765A (ja) * | 1987-03-31 | 1988-10-12 | Toshiba Corp | 拡散抵抗を有する集積回路 |
JPH0434173Y2 (de) * | 1987-10-27 | 1992-08-14 | ||
US6593869B1 (en) * | 2002-03-28 | 2003-07-15 | Hrl Laboratories, Llc | High efficiency, high output drive current switch with application to digital to analog conversion |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2351505A1 (fr) * | 1976-05-13 | 1977-12-09 | Ibm France | Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees |
-
1980
- 1980-03-08 DE DE19803009042 patent/DE3009042A1/de not_active Withdrawn
- 1980-03-12 GB GB8008322A patent/GB2044998A/en not_active Withdrawn
- 1980-03-17 SE SE8002073A patent/SE8002073L/xx unknown
- 1980-03-18 CA CA347,882A patent/CA1122721A/en not_active Expired
- 1980-03-18 JP JP3468380A patent/JPS55146957A/ja active Granted
- 1980-03-18 FR FR8006016A patent/FR2452180A1/fr active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2044998A (en) | 1980-10-22 |
JPS55146957A (en) | 1980-11-15 |
JPS6356707B2 (de) | 1988-11-09 |
SE8002073L (sv) | 1980-09-20 |
FR2452180A1 (fr) | 1980-10-17 |
DE3009042A1 (de) | 1980-10-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1122721A (en) | Linear semiconductor resistor | |
US5552625A (en) | Semiconductor device having a semi-insulating layer | |
US4458261A (en) | Insulated gate type transistors | |
US4263518A (en) | Arrangement for correcting the voltage coefficient of resistance of resistors integral with a semiconductor body | |
CA1089986A (en) | Operating circuitry for semiconductor charge coupled devices | |
CA1165463A (en) | Waveform generating apparatus | |
EP0083411B1 (de) | Digitaler Photodetektor | |
US4945762A (en) | Silicon sensor with trimmable wheatstone bridge | |
US4053915A (en) | Temperature compensated constant current source device | |
US4200877A (en) | Temperature-compensated voltage reference diode with intermediate polycrystalline layer | |
EP0061930B1 (de) | Logische Schaltung mit Josephson-Übergang | |
EP0017919B1 (de) | Diffundierter Widerstand | |
US3772536A (en) | Digital cell for large scale integration | |
KR940010917B1 (ko) | 반도체 가변용량소자 | |
GB1592856A (en) | Semiconductor devices | |
JP2001168651A (ja) | 半導体装置 | |
GB2104725A (en) | Variable capacitance device | |
GB1599177A (en) | Semiconductor integrated circuit devices | |
US5959343A (en) | Semiconductor device | |
Meindl | Microelectronic circuit elements | |
CA1198484A (en) | Circuit utilizing josephson effect | |
US3634931A (en) | Method for manufacturing pressure sensitive semiconductor device | |
US5572255A (en) | Image reading apparatus and method for driving appropriate photoelectric energy converting elements when first and second driving voltages are applied simultaneously | |
US4223335A (en) | Semiconductor device body having identical isolated composite resistor regions | |
Huang et al. | A transfer length model for contact resistance of two-layer systems with arbitrary interlayer coupling under the contacts |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |