GB1175449A - Crucible-Free Zone-by-Zone Melting Operations - Google Patents
Crucible-Free Zone-by-Zone Melting OperationsInfo
- Publication number
- GB1175449A GB1175449A GB27106/67A GB2710667A GB1175449A GB 1175449 A GB1175449 A GB 1175449A GB 27106/67 A GB27106/67 A GB 27106/67A GB 2710667 A GB2710667 A GB 2710667A GB 1175449 A GB1175449 A GB 1175449A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- rod
- recrystallized
- supply
- coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004857 zone melting Methods 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1,175,449. Floating zone-melting. SIEMENS A.G, 12 June, 1967 [15 June, 1966], No. 27106/67. Heading B1S. In the floating zone-melting of a silicon rod attached to a seed using an induction coil, the coil is eccentrically disposed with respect to the supply rod and the recrystallized rod for at least part of the operation. The coil may be reciprocated by rectilinear or circular movement of its axis at e.g. 9 alternations per minute between maximum and minimum eccentricity. The speed of passage of the molten zone may be 2 mm/min. The recrystallized rod may be rotated at 20 rpm. The cross-sectional area of the seed may be up to one tenth that of the supply rod. In steady operation, the diameter of both the supply and recrystallized rods may be larger than that of the coil. The supply and recrystallized rods may be on the same axis (Fig. 2) or may be offset (Fig. 5).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0104290 | 1966-06-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1175449A true GB1175449A (en) | 1969-12-23 |
Family
ID=7525764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB27106/67A Expired GB1175449A (en) | 1966-06-15 | 1967-06-12 | Crucible-Free Zone-by-Zone Melting Operations |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3685973A (en) |
| BE (1) | BE699651A (en) |
| DK (1) | DK138779B (en) |
| GB (1) | GB1175449A (en) |
| NL (1) | NL143435B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4002523A (en) * | 1973-09-12 | 1977-01-11 | Texas Instruments Incorporated | Dislocation-free growth of silicon semiconductor crystals with <110> orientation |
| DE2533858C2 (en) * | 1975-07-29 | 1983-11-17 | Siemens AG, 1000 Berlin und 8000 München | Device for crucible-free zone melting of a semiconductor material rod with an induction heating coil fixed in the axial direction |
| DE2538812A1 (en) * | 1975-09-01 | 1977-03-03 | Wacker Chemitronic | METHOD OF DOPING SEMICONDUCTOR RODS |
| JPS63291888A (en) * | 1987-05-25 | 1988-11-29 | Shin Etsu Handotai Co Ltd | Production device for semiconductor single crystal |
| US5319670A (en) * | 1992-07-24 | 1994-06-07 | The United States Of America As Represented By The United States Department Of Energy | Velocity damper for electromagnetically levitated materials |
-
1967
- 1967-03-28 DK DK157067AA patent/DK138779B/en unknown
- 1967-06-08 BE BE699651D patent/BE699651A/xx unknown
- 1967-06-12 GB GB27106/67A patent/GB1175449A/en not_active Expired
- 1967-06-15 NL NL676708321A patent/NL143435B/en unknown
-
1970
- 1970-09-16 US US72878A patent/US3685973A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3685973A (en) | 1972-08-22 |
| NL143435B (en) | 1974-10-15 |
| NL6708321A (en) | 1967-12-18 |
| DK138779C (en) | 1979-04-09 |
| DE1519894B2 (en) | 1975-10-09 |
| DE1519894A1 (en) | 1971-01-21 |
| BE699651A (en) | 1967-12-08 |
| DK138779B (en) | 1978-10-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |