GB1126510A - A method of melting a rod of crystalline material zone-by-zone - Google Patents
A method of melting a rod of crystalline material zone-by-zoneInfo
- Publication number
- GB1126510A GB1126510A GB44084/67A GB4408467A GB1126510A GB 1126510 A GB1126510 A GB 1126510A GB 44084/67 A GB44084/67 A GB 44084/67A GB 4408467 A GB4408467 A GB 4408467A GB 1126510 A GB1126510 A GB 1126510A
- Authority
- GB
- United Kingdom
- Prior art keywords
- supply
- zone
- rod
- rods
- fed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002178 crystalline material Substances 0.000 title 1
- 238000002844 melting Methods 0.000 title 1
- 230000008018 melting Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000010438 heat treatment Methods 0.000 abstract 3
- 230000003534 oscillatory effect Effects 0.000 abstract 2
- 230000001154 acute effect Effects 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 238000004857 zone melting Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/91—Downward pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/912—Replenishing liquid precursor, other than a moving zone
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1,126,510. Zone-melting. SIEMENS A.G. 27 Sept., 1967 [28 Sept., 1966], No. 44084/67. Addition to 1044592. Heading B1S. After lateral shifting movement of a recrystallized rod 6 so that the supply rod 1 is fed eccentrically to an enlarged molten zone 3 (Fig. 2), a further supply rod 5 is fed to the molten zone (Fig. 3), the supply rods being fed through separate loops of an induction heating device 2 of figure of eight shape (Fig. 5). The supply rods may alternatively be fed to the molten-zone from below. The heating device is modified if more than two supply rods are fed. Separate heating devices for each supply rod may alternatively be employed. In a further modification, the supply rods may be inclined to one another at an acute angle. After feeding the further supply rod(s) to the molten zone, the recrystallized rod may be subjected to oscillatory lateral movement or to eccentric rotation at an amplitude of half the radius of the supply rods. Alternatively, the supply rods may be subjected to oscillatory lateral movement or to eccentric rotation. The supply and recrystallized rods may be rotated.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0106157 | 1966-09-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1126510A true GB1126510A (en) | 1968-09-05 |
Family
ID=7527176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB44084/67A Expired GB1126510A (en) | 1966-09-28 | 1967-09-27 | A method of melting a rod of crystalline material zone-by-zone |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3539305A (en) |
| DE (1) | DE1544301A1 (en) |
| GB (1) | GB1126510A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4072556A (en) * | 1969-11-29 | 1978-02-07 | Siemens Aktiengesellschaft | Device for crucible-free floating-zone melting of a crystalline rod and method of operating the same |
| DE1960088C3 (en) * | 1969-11-29 | 1974-07-25 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Device for crucible-free zone melting of a crystalline rod |
| DE102009005837B4 (en) * | 2009-01-21 | 2011-10-06 | Pv Silicon Forschungs Und Produktions Gmbh | Method and device for producing silicon thin rods |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB755422A (en) * | 1953-01-19 | 1956-08-22 | Telefunken Gmbh | An improved method for the production of single crystals of semi-conductor materials |
| NL237834A (en) * | 1958-04-09 | |||
| DE1218404B (en) * | 1964-02-01 | 1966-06-08 | Siemens Ag | Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod |
| US3470039A (en) * | 1966-12-21 | 1969-09-30 | Texas Instruments Inc | Continuous junction growth |
-
1966
- 1966-09-28 DE DE19661544301 patent/DE1544301A1/en active Pending
-
1967
- 1967-09-27 US US671547A patent/US3539305A/en not_active Expired - Lifetime
- 1967-09-27 GB GB44084/67A patent/GB1126510A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3539305A (en) | 1970-11-10 |
| DE1544301A1 (en) | 1970-05-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1126510A (en) | A method of melting a rod of crystalline material zone-by-zone | |
| GB1191701A (en) | Method and apparatus for Attaching Spouts to a Web | |
| FR1225418A (en) | Method and device for producing high intensity arc discharge | |
| IL25577A (en) | Apparatus and method for backtacking loose ends of sewing machine stitching and the like | |
| GB954991A (en) | Improvements in or relating to methods of and apparatus for zone-melting | |
| ES332217A1 (en) | Method with your device to orient and feed asimetric closure capsules. (Machine-translation by Google Translate, not legally binding) | |
| GB1081600A (en) | A method of melting a rod of crystalline material zone-by-zone | |
| GB1226473A (en) | ||
| GB1095587A (en) | ||
| GB1081827A (en) | Improvements in or relating to a floating zone process | |
| GB1375132A (en) | ||
| FR1433041A (en) | Process for obtaining special seams, and in particular basting, on sewing machines with zigzag stitches and fancy stitches, and a sewing machine for the implementation of this process | |
| GB1150691A (en) | Method of Growing Single Crystals | |
| JPS5438204A (en) | Controller for distributing chute in charging apparatus at bellliss furnace top | |
| GB1007909A (en) | A process for zone-by-zone melting of a rod of crystalline material | |
| GB1191166A (en) | Zone Melting | |
| GB1386356A (en) | Zone melting process | |
| ZA695270B (en) | Surgical sewing thread and method for producing same | |
| FR2024765A6 (en) | PROCESS AND INSTALLATION FOR THE CONTINUOUS COMPLETION OF HOSPITALITY AND MESH FABRICS | |
| GB1284008A (en) | Improvements in or relating to the non-crucible zone melting of a crystalline rod | |
| GB1322975A (en) | Methods of producing single crystals of semiconductor material | |
| BE759555A (en) | INSTALLATION FOR A CROSSET-FREE ZONE FUSION OF A CRYSTALLINE BAR AND PROCESS FOR ITS EXPLOITATION | |
| GB915883A (en) | A process for producing a monocrystalline rod of semi-conductor material | |
| CH432475A (en) | Device for crucible-free zone melting | |
| CH438229A (en) | Device for crucible-free zone melting |