GB1008299A - Improvements in or relating to the zone melting of silicon rods - Google Patents
Improvements in or relating to the zone melting of silicon rodsInfo
- Publication number
- GB1008299A GB1008299A GB4820363A GB4820363A GB1008299A GB 1008299 A GB1008299 A GB 1008299A GB 4820363 A GB4820363 A GB 4820363A GB 4820363 A GB4820363 A GB 4820363A GB 1008299 A GB1008299 A GB 1008299A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- boundary angle
- relating
- zone
- dec
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- 238000004857 zone melting Methods 0.000 title abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 3
- 230000006698 induction Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1,008,299. Zone - melting. SIEMENS & HALSKE A.G. Dec. 6, 1963 [Dec. 7, 1962], No. 48203/63. Heading B1S. In the downward passage of a molten zone produced by induction heating through a silicon rod, the boundary angle of the molten zone at one of the liquid-solid interfaces is maintained at 12 degrees Π1 degree. The boundary angle may be maintained by the use of one or more short circuiting rings or of one or more additional coils wound in the opposite direction to the heating coil and carrying a weak current of the same frequency as that of the heating coil. A rod of smaller diameter than the initial rod with the boundary angle at the upper interface (Fig. 1) or a rod of unchanged diameter with the boundary angle at the lower interface (Fig. 2) may be produced.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0082750 | 1962-12-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1008299A true GB1008299A (en) | 1965-10-27 |
Family
ID=7510570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4820363A Expired GB1008299A (en) | 1962-12-07 | 1963-12-06 | Improvements in or relating to the zone melting of silicon rods |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH414552A (en) |
| DE (1) | DE1248614B (en) |
| GB (1) | GB1008299A (en) |
| NL (1) | NL299517A (en) |
-
0
- NL NL299517D patent/NL299517A/xx unknown
- DE DES82750A patent/DE1248614B/en not_active Withdrawn
-
1963
- 1963-11-07 CH CH1366563A patent/CH414552A/en unknown
- 1963-12-06 GB GB4820363A patent/GB1008299A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1248614B (en) | 1967-08-31 |
| NL299517A (en) | |
| CH414552A (en) | 1966-06-15 |
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