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FR3107796B1 - Dispositif de génération de signaux radiofréquence en quadrature de phase, utilisable en particulier dans la technologie 5G - Google Patents

Dispositif de génération de signaux radiofréquence en quadrature de phase, utilisable en particulier dans la technologie 5G Download PDF

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Publication number
FR3107796B1
FR3107796B1 FR2001936A FR2001936A FR3107796B1 FR 3107796 B1 FR3107796 B1 FR 3107796B1 FR 2001936 A FR2001936 A FR 2001936A FR 2001936 A FR2001936 A FR 2001936A FR 3107796 B1 FR3107796 B1 FR 3107796B1
Authority
FR
France
Prior art keywords
transistors
usable
technology
phase quadrature
radiofrequency signals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2001936A
Other languages
English (en)
Other versions
FR3107796A1 (fr
Inventor
Frédéric Rivoirard
Felix Gauthier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Alps SAS
Original Assignee
STMicroelectronics Alps SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Alps SAS filed Critical STMicroelectronics Alps SAS
Priority to FR2001936A priority Critical patent/FR3107796B1/fr
Priority to US17/187,024 priority patent/US11757477B2/en
Priority to CN202310629885.0A priority patent/CN116582150A/zh
Priority to CN202120440516.3U priority patent/CN215818125U/zh
Priority to CN202110225804.1A priority patent/CN113395078B/zh
Publication of FR3107796A1 publication Critical patent/FR3107796A1/fr
Application granted granted Critical
Publication of FR3107796B1 publication Critical patent/FR3107796B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0096—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges where a full band is frequency converted into another full band
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
    • H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1441—Balanced arrangements with transistors using field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/403—Circuits using the same oscillator for generating both the transmitter frequency and the receiver local oscillator frequency
    • H04B1/408—Circuits using the same oscillator for generating both the transmitter frequency and the receiver local oscillator frequency the transmitter oscillator frequency being identical to the receiver local oscillator frequency
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/54—Circuits using the same frequency for two directions of communication
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W88/00—Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
    • H04W88/02—Terminal devices
    • H04W88/06—Terminal devices adapted for operation in multiple networks or having at least two operational modes, e.g. multi-mode terminals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0001—Circuit elements of demodulators
    • H03D2200/0019—Gilbert multipliers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Superheterodyne Receivers (AREA)
  • Transmitters (AREA)
  • Transceivers (AREA)
  • Amplifiers (AREA)

Abstract

Dispositif électronique intégré comprenant un module mélangeur (MXi) comportant un étage transconducteur tension/courant (ETT) comportant des premiers transistors (N5, N6) et connecté à un étage de mélange (ETM) comportant des deuxièmes transistors (N1-N4), dans lequel l’étage de mélange (ETM) comporte un circuit résistif de dégénérescence (R1-R4) connecté sur les sources des deuxièmes transistors et une entrée d’étalonnage (ECi) connectée aux grilles des deuxièmes transistors et destinée à recevoir une tension d’étalonnage ajustable (VGM), et les sources des premiers transistors (N5, N6) sont directement connectées à un point froid d’alimentation (GND). Figure pour l’abrégé : Fig 3
FR2001936A 2020-02-27 2020-02-27 Dispositif de génération de signaux radiofréquence en quadrature de phase, utilisable en particulier dans la technologie 5G Active FR3107796B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR2001936A FR3107796B1 (fr) 2020-02-27 2020-02-27 Dispositif de génération de signaux radiofréquence en quadrature de phase, utilisable en particulier dans la technologie 5G
US17/187,024 US11757477B2 (en) 2020-02-27 2021-02-26 Device for generating radiofrequency signals in phase quadrature
CN202310629885.0A CN116582150A (zh) 2020-02-27 2021-03-01 用于产生相位正交的射频信号的装置
CN202120440516.3U CN215818125U (zh) 2020-02-27 2021-03-01 电子设备和通信装置
CN202110225804.1A CN113395078B (zh) 2020-02-27 2021-03-01 用于产生相位正交的射频信号的装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2001936 2020-02-27
FR2001936A FR3107796B1 (fr) 2020-02-27 2020-02-27 Dispositif de génération de signaux radiofréquence en quadrature de phase, utilisable en particulier dans la technologie 5G

Publications (2)

Publication Number Publication Date
FR3107796A1 FR3107796A1 (fr) 2021-09-03
FR3107796B1 true FR3107796B1 (fr) 2022-03-25

Family

ID=70228326

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2001936A Active FR3107796B1 (fr) 2020-02-27 2020-02-27 Dispositif de génération de signaux radiofréquence en quadrature de phase, utilisable en particulier dans la technologie 5G

Country Status (3)

Country Link
US (1) US11757477B2 (fr)
CN (3) CN113395078B (fr)
FR (1) FR3107796B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3107796B1 (fr) * 2020-02-27 2022-03-25 St Microelectronics Alps Sas Dispositif de génération de signaux radiofréquence en quadrature de phase, utilisable en particulier dans la technologie 5G

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Also Published As

Publication number Publication date
CN215818125U (zh) 2022-02-11
CN116582150A (zh) 2023-08-11
CN113395078A (zh) 2021-09-14
US11757477B2 (en) 2023-09-12
CN113395078B (zh) 2023-06-06
FR3107796A1 (fr) 2021-09-03
US20210273664A1 (en) 2021-09-02

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