[go: up one dir, main page]

FR3067630B1 - Tampon de polissage a rainures obliques - Google Patents

Tampon de polissage a rainures obliques Download PDF

Info

Publication number
FR3067630B1
FR3067630B1 FR1855179A FR1855179A FR3067630B1 FR 3067630 B1 FR3067630 B1 FR 3067630B1 FR 1855179 A FR1855179 A FR 1855179A FR 1855179 A FR1855179 A FR 1855179A FR 3067630 B1 FR3067630 B1 FR 3067630B1
Authority
FR
France
Prior art keywords
polishing
polishing pad
grooves
oblique grooves
radial feed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1855179A
Other languages
English (en)
Other versions
FR3067630A1 (fr
Inventor
John Vu Nguyen
Tony Quan Tran
Jeffrey James Hendron
Jeffrey Robert Stack
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DUPONT ELECTRONIC MATERIALS HOLDING, INC., US
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR3067630A1 publication Critical patent/FR3067630A1/fr
Application granted granted Critical
Publication of FR3067630B1 publication Critical patent/FR3067630B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/0203—Making porous regions on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne un tampon de polissage (10 ; 210) convenant pour le polissage ou la planarisation d'une galette d'au moins l'un parmi les substrats semi-conducteurs, optiques et magnétiques. Le tampon de polissage (10; 210) comprend des rainures d'alimentation radiales (20-34 ; 220-234) dans une couche de polissage (12 ; 212) séparant la couche de polissage (12 ; 212) en régions de polissage (40-54 ; 240-254). Les rainures d'alimentation radiales s'étendent au moins depuis un emplacement adjacent au centre jusqu'à un emplacement adjacent au bord extérieur (18 ; 218) du tampon de polissage (10 ; 210). Chaque région de polissage (40-54 ; 240-254) comprend une série de rainures obliques connectant une paire de rainures d'alimentation radiales (20-34 ; 220-234) adjacentes. La majorité des rainures obliques a soit une oblicité vers l'intérieur en direction du centre du tampon de polissage soit une oblicité vers l'extérieur pour diriger le fluide de polissage en direction du bord extérieur (18 ; 218) du tampon de polissage (10 ; 210).
FR1855179A 2017-06-14 2018-06-13 Tampon de polissage a rainures obliques Active FR3067630B1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201715623166A 2017-06-14 2017-06-14
US15623166 2017-06-14
US201715625003A 2017-06-16 2017-06-16
US15625003 2017-06-16
US15/726,027 US10777418B2 (en) 2017-06-14 2017-10-05 Biased pulse CMP groove pattern
US15726027 2017-10-05

Publications (2)

Publication Number Publication Date
FR3067630A1 FR3067630A1 (fr) 2018-12-21
FR3067630B1 true FR3067630B1 (fr) 2022-04-01

Family

ID=64457742

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1855179A Active FR3067630B1 (fr) 2017-06-14 2018-06-13 Tampon de polissage a rainures obliques

Country Status (8)

Country Link
US (2) US10777418B2 (fr)
JP (1) JP7323271B2 (fr)
KR (1) KR102660716B1 (fr)
CN (1) CN109079649B (fr)
DE (1) DE102018004632A1 (fr)
FR (1) FR3067630B1 (fr)
SG (1) SG10201804560VA (fr)
TW (1) TWI799413B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102059647B1 (ko) * 2018-06-21 2019-12-26 에스케이씨 주식회사 슬러리 유동성이 향상된 연마패드 및 이의 제조방법
US11331767B2 (en) * 2019-02-01 2022-05-17 Micron Technology, Inc. Pads for chemical mechanical planarization tools, chemical mechanical planarization tools, and related methods
KR102222851B1 (ko) * 2019-05-29 2021-03-08 한국생산기술연구원 그루브가 형성된 연마용 패드
KR102746090B1 (ko) 2020-03-13 2024-12-26 삼성전자주식회사 Cmp 패드 및 이를 구비하는 화학적 기계적 연마 장치

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2536781C3 (de) * 1975-08-19 1978-03-16 Basf Ag, 6700 Ludwigshafen Verfahren zur herstellung von mehrschichtmagnetogrammtraegern
US4037367A (en) 1975-12-22 1977-07-26 Kruse James A Grinding tool
US4450652A (en) 1981-09-04 1984-05-29 Monsanto Company Temperature control for wafer polishing
JPS60242975A (ja) * 1984-05-14 1985-12-02 Kanebo Ltd 平面研磨装置
US5076024A (en) 1990-08-24 1991-12-31 Intelmatec Corporation Disk polisher assembly
US5212910A (en) 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5527215A (en) 1992-01-10 1996-06-18 Schlegel Corporation Foam buffing pad having a finishing surface with a splash reducing configuration
US5243790A (en) 1992-06-25 1993-09-14 Abrasifs Vega, Inc. Abrasive member
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US6135856A (en) * 1996-01-19 2000-10-24 Micron Technology, Inc. Apparatus and method for semiconductor planarization
US5778481A (en) 1996-02-15 1998-07-14 International Business Machines Corporation Silicon wafer cleaning and polishing pads
US5690540A (en) 1996-02-23 1997-11-25 Micron Technology, Inc. Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers
US5888121A (en) 1997-09-23 1999-03-30 Lsi Logic Corporation Controlling groove dimensions for enhanced slurry flow
GB2345255B (en) * 1998-12-29 2000-12-27 United Microelectronics Corp Chemical-Mechanical Polishing Pad
DE60039054D1 (de) * 1999-03-30 2008-07-10 Nikon Corp Gt-polierkörper, poliervorrichtung, polierverfahren und verfahren zum herstellen einer halbleitervorrichtung (2002/23)
US6220942B1 (en) 1999-04-02 2001-04-24 Applied Materials, Inc. CMP platen with patterned surface
JP2001071256A (ja) 1999-08-31 2001-03-21 Shinozaki Seisakusho:Kk 研磨パッドの溝形成方法及び装置並びに研磨パッド
EP1614505B1 (fr) 2000-01-31 2008-11-26 Shin-Etsu Handotai Company Limited Procédé de polissage
TW479000B (en) 2000-02-24 2002-03-11 United Microelectronics Corp Polish pad for polishing semiconductor wafer
US6749485B1 (en) 2000-05-27 2004-06-15 Rodel Holdings, Inc. Hydrolytically stable grooved polishing pads for chemical mechanical planarization
DE60110225T2 (de) * 2000-06-19 2006-03-09 Struers A/S Eine schleif- und/oder polierscheibe mit mehreren zonen
US6656019B1 (en) * 2000-06-29 2003-12-02 International Business Machines Corporation Grooved polishing pads and methods of use
US8062098B2 (en) * 2000-11-17 2011-11-22 Duescher Wayne O High speed flat lapping platen
JP4087581B2 (ja) 2001-06-06 2008-05-21 株式会社荏原製作所 研磨装置
US7169014B2 (en) * 2002-07-18 2007-01-30 Micron Technology, Inc. Apparatuses for controlling the temperature of polishing pads used in planarizing micro-device workpieces
US7377840B2 (en) * 2004-07-21 2008-05-27 Neopad Technologies Corporation Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs
US6783436B1 (en) * 2003-04-29 2004-08-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with optimized grooves and method of forming same
US6918824B2 (en) * 2003-09-25 2005-07-19 Novellus Systems, Inc. Uniform fluid distribution and exhaust system for a chemical-mechanical planarization device
US6843711B1 (en) * 2003-12-11 2005-01-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing pad having a process-dependent groove configuration
US6955587B2 (en) * 2004-01-30 2005-10-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Grooved polishing pad and method
JP2005262341A (ja) 2004-03-16 2005-09-29 Noritake Super Abrasive:Kk Ｃｍｐパッドコンディショナー
US7329174B2 (en) * 2004-05-20 2008-02-12 Jsr Corporation Method of manufacturing chemical mechanical polishing pad
JP2007081322A (ja) * 2005-09-16 2007-03-29 Jsr Corp 化学機械研磨パッドの製造方法
KR100568258B1 (ko) * 2004-07-01 2006-04-07 삼성전자주식회사 화학적 기계적 연마용 연마 패드 및 이를 이용하는 화학적기계적 연마 장치
USD559066S1 (en) * 2004-10-26 2008-01-08 Jsr Corporation Polishing pad
US7169029B2 (en) * 2004-12-16 2007-01-30 3M Innovative Properties Company Resilient structured sanding article
JP3769581B1 (ja) * 2005-05-18 2006-04-26 東洋ゴム工業株式会社 研磨パッドおよびその製造方法
KR101279819B1 (ko) * 2005-04-12 2013-06-28 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 방사-편향 연마 패드
KR100721196B1 (ko) * 2005-05-24 2007-05-23 주식회사 하이닉스반도체 연마패드 및 이를 이용한 화학적기계적연마장치
US7534162B2 (en) * 2005-09-06 2009-05-19 Freescale Semiconductor, Inc. Grooved platen with channels or pathway to ambient air
US7357703B2 (en) * 2005-12-28 2008-04-15 Jsr Corporation Chemical mechanical polishing pad and chemical mechanical polishing method
US20080220702A1 (en) * 2006-07-03 2008-09-11 Sang Fang Chemical Industry Co., Ltd. Polishing pad having surface texture
US7300340B1 (en) * 2006-08-30 2007-11-27 Rohm and Haas Electronics Materials CMP Holdings, Inc. CMP pad having overlaid constant area spiral grooves
JP4909706B2 (ja) 2006-10-24 2012-04-04 東洋ゴム工業株式会社 研磨パッド
TWI455795B (zh) * 2007-10-18 2014-10-11 Iv Technologies Co Ltd 研磨墊及研磨方法
US20090137187A1 (en) * 2007-11-21 2009-05-28 Chien-Min Sung Diagnostic Methods During CMP Pad Dressing and Associated Systems
US9180570B2 (en) * 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
TWI360459B (en) * 2008-04-11 2012-03-21 Bestac Advanced Material Co Ltd A polishing pad having groove structure for avoidi
JP5706178B2 (ja) * 2010-02-05 2015-04-22 株式会社クラレ 研磨パッド
KR20110100080A (ko) * 2010-03-03 2011-09-09 삼성전자주식회사 화학적 기계적 연마 공정용 연마 패드 및 이를 포함하는 화학적 기계적 연마 설비
KR101232787B1 (ko) * 2010-08-18 2013-02-13 주식회사 엘지화학 연마 시스템용 연마 패드
US9211628B2 (en) 2011-01-26 2015-12-15 Nexplanar Corporation Polishing pad with concentric or approximately concentric polygon groove pattern
TWI492818B (zh) * 2011-07-12 2015-07-21 Iv Technologies Co Ltd 研磨墊、研磨方法以及研磨系統
US8920219B2 (en) 2011-07-15 2014-12-30 Nexplanar Corporation Polishing pad with alignment aperture
CN103782372A (zh) * 2011-09-15 2014-05-07 东丽株式会社 研磨垫
US9067298B2 (en) * 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with grooved foundation layer and polishing surface layer
SG11201503496YA (en) * 2012-11-06 2015-06-29 Cabot Microelectronics Corp Polishing pad with offset concentric grooving pattern and method for polishing a substrate therewith
US9649742B2 (en) * 2013-01-22 2017-05-16 Nexplanar Corporation Polishing pad having polishing surface with continuous protrusions
US9415479B2 (en) * 2013-02-08 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive chemical mechanical planarization polishing pad
TWM459065U (zh) 2013-04-29 2013-08-11 Iv Technologies Co Ltd 硏磨墊以及硏磨系統
TWM475334U (en) 2013-06-07 2014-04-01 Iv Technologies Co Ltd Polishing pad
TWI599447B (zh) * 2013-10-18 2017-09-21 卡博特微電子公司 具有偏移同心溝槽圖樣之邊緣排除區的ｃｍｐ拋光墊
CN203665338U (zh) * 2013-12-13 2014-06-25 上海乐百通工具制造有限公司 金刚石软膜片
TWI549781B (zh) 2015-08-07 2016-09-21 智勝科技股份有限公司 研磨墊、研磨系統及研磨方法
CN106564004B (zh) * 2016-11-17 2018-10-19 湖北鼎龙控股股份有限公司 一种抛光垫

Also Published As

Publication number Publication date
SG10201804560VA (en) 2019-01-30
DE102018004632A1 (de) 2018-12-20
US20180366333A1 (en) 2018-12-20
CN109079649A (zh) 2018-12-25
TW201904723A (zh) 2019-02-01
JP2019022931A (ja) 2019-02-14
JP7323271B2 (ja) 2023-08-08
CN109079649B (zh) 2020-11-17
US10777418B2 (en) 2020-09-15
TWI799413B (zh) 2023-04-21
KR20180136376A (ko) 2018-12-24
US20200381258A1 (en) 2020-12-03
FR3067630A1 (fr) 2018-12-21
KR102660716B1 (ko) 2024-04-26

Similar Documents

Publication Publication Date Title
FR3067630B1 (fr) Tampon de polissage a rainures obliques
FR3067629B1 (fr) Tampon de polissage a structure de rainures trapezoidales
FR3049205B1 (fr) Tampon de polissage ayant des rainures de retrait des debris
TWI641023B (zh) 具有作爲蝕刻止擋之ＳｉＧｅＣ層之接合之半導體結構
US20150270161A1 (en) Bonded Semiconductor Structure with SiGeC/SiGeBC Layer as Etch Stop
JP2018515927A5 (fr)
FR3082997B1 (fr) Procede de transfert de couche(s) de materiau depuis un premier substrat sur un deuxieme substrat
MX378179B (es) Disco de pulido para una herramienta de mecanizado fino de superficies opticamente activas en cristales para gafas.
FR3067626B1 (fr) Procede de polissage cmp uniforme
SG10201900566PA (en) Method of processing a wafer
MA38859B1 (fr) Anticorps anti-c5 présentant une pharmacocinétique améliorée
CN105448797A (zh) 晶片装置和用于加工晶片的方法
PH12022500028A1 (en) Methods for treating or preventing sars-cov-2 infections and covid -19 with anti-sars-cov-2 spike glycoprotein antibodies
MY174588A (en) Contact lenses with improved oxygen transmission
SG10201805091VA (en) Semiconductor package and method of manufacturing the same
FR3036844B1 (fr) Procede de fabrication de semi-conducteur sur isolant
EP3996870A4 (fr) Tampon de polissage utilisant des agents de durcissement de polyamine et de cyclohexanediméthanol
SG10201804561QA (en) High-rate cmp polishing method
AU2017259966A1 (en) TrkB agonist antibodies for treating neurodegenerative disorders
JP2008173741A (ja) 研磨装置
US10943810B2 (en) Device and method for bonding
MY180472A (en) Orthokeratology lens
JP6389620B2 (ja) 研磨パッド
EP3994002A4 (fr) Ensemble de chauffage de tranche au nitrure de silicium multizone ayant une couche de protection contre la corrosion, et procédés de fabrication et d'utilisation de celui-ci
EP3928792A4 (fr) Biomarqueur sanguin périphérique pour évaluer l'effet immunitaire antitumoral d'une radiothérapie

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLSC Publication of the preliminary search report

Effective date: 20210723

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

CD Change of name or company name

Owner name: DUPONT ELECTRONIC MATERIALS HOLDING, INC., US

Effective date: 20241108