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FR2935537B1 - Procede d'initiation d'adhesion moleculaire - Google Patents

Procede d'initiation d'adhesion moleculaire

Info

Publication number
FR2935537B1
FR2935537B1 FR0855767A FR0855767A FR2935537B1 FR 2935537 B1 FR2935537 B1 FR 2935537B1 FR 0855767 A FR0855767 A FR 0855767A FR 0855767 A FR0855767 A FR 0855767A FR 2935537 B1 FR2935537 B1 FR 2935537B1
Authority
FR
France
Prior art keywords
molecular adhesion
initiation method
adhesion initiation
molecular
initiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0855767A
Other languages
English (en)
Other versions
FR2935537A1 (fr
Inventor
Arnaud Castex
Marcel Broekaart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0855767A priority Critical patent/FR2935537B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to EP09809307A priority patent/EP2319074A1/fr
Priority to CN2009801152329A priority patent/CN102017125A/zh
Priority to KR1020127011092A priority patent/KR20120089695A/ko
Priority to KR1020107023019A priority patent/KR20100139023A/ko
Priority to US12/936,639 priority patent/US8163570B2/en
Priority to PCT/EP2009/060250 priority patent/WO2010023082A1/fr
Priority to JP2011511038A priority patent/JP2011524084A/ja
Priority to KR1020127011093A priority patent/KR20120089696A/ko
Priority to TW098128545A priority patent/TW201017739A/zh
Publication of FR2935537A1 publication Critical patent/FR2935537A1/fr
Application granted granted Critical
Publication of FR2935537B1 publication Critical patent/FR2935537B1/fr
Priority to US13/195,605 priority patent/US20110287604A1/en
Priority to US13/195,583 priority patent/US20130093033A9/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR0855767A 2008-08-21 2008-08-28 Procede d'initiation d'adhesion moleculaire Expired - Fee Related FR2935537B1 (fr)

Priority Applications (12)

Application Number Priority Date Filing Date Title
FR0855767A FR2935537B1 (fr) 2008-08-28 2008-08-28 Procede d'initiation d'adhesion moleculaire
KR1020127011093A KR20120089696A (ko) 2008-08-28 2009-08-06 분자 본딩을 개시하는 방법
KR1020127011092A KR20120089695A (ko) 2008-08-28 2009-08-06 분자 본딩을 개시하는 방법
KR1020107023019A KR20100139023A (ko) 2008-08-28 2009-08-06 분자 본딩을 개시하는 방법
US12/936,639 US8163570B2 (en) 2008-08-28 2009-08-06 Method of initiating molecular bonding
PCT/EP2009/060250 WO2010023082A1 (fr) 2008-08-28 2009-08-06 Procédé d’initiation de liaison moléculaire
EP09809307A EP2319074A1 (fr) 2008-08-28 2009-08-06 Procédé d initiation de liaison moléculaire
CN2009801152329A CN102017125A (zh) 2008-08-28 2009-08-06 起动分子键合的方法
JP2011511038A JP2011524084A (ja) 2008-08-28 2009-08-06 分子接合を開始する方法
TW098128545A TW201017739A (en) 2008-08-28 2009-08-25 A method of initiating molecular bonding
US13/195,605 US20110287604A1 (en) 2008-08-28 2011-08-01 Methods of forming semiconductor structures comprising direct bonding of substrates
US13/195,583 US20130093033A9 (en) 2008-08-21 2011-08-01 Three dimensional structures having improved alignments between layers of microcomponents

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0855767A FR2935537B1 (fr) 2008-08-28 2008-08-28 Procede d'initiation d'adhesion moleculaire

Publications (2)

Publication Number Publication Date
FR2935537A1 FR2935537A1 (fr) 2010-03-05
FR2935537B1 true FR2935537B1 (fr) 2010-10-22

Family

ID=40361570

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0855767A Expired - Fee Related FR2935537B1 (fr) 2008-08-21 2008-08-28 Procede d'initiation d'adhesion moleculaire

Country Status (8)

Country Link
US (3) US8163570B2 (fr)
EP (1) EP2319074A1 (fr)
JP (1) JP2011524084A (fr)
KR (3) KR20120089695A (fr)
CN (1) CN102017125A (fr)
FR (1) FR2935537B1 (fr)
TW (1) TW201017739A (fr)
WO (1) WO2010023082A1 (fr)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009128084A1 (fr) * 2008-04-15 2009-10-22 Indian Institute Of Science Capteur tec de déviation élastique sous le seuil pour détecter une pression/force, procédé et système à cet effet
FR2935537B1 (fr) 2008-08-28 2010-10-22 Soitec Silicon On Insulator Procede d'initiation d'adhesion moleculaire
FR2935536B1 (fr) * 2008-09-02 2010-09-24 Soitec Silicon On Insulator Procede de detourage progressif
EP2200077B1 (fr) * 2008-12-22 2012-12-05 Soitec Procédé pour la liaison de deux substrats
FR2943177B1 (fr) 2009-03-12 2011-05-06 Soitec Silicon On Insulator Procede de fabrication d'une structure multicouche avec report de couche circuit
FR2947380B1 (fr) 2009-06-26 2012-12-14 Soitec Silicon Insulator Technologies Procede de collage par adhesion moleculaire.
US8314487B2 (en) * 2009-12-18 2012-11-20 Infineon Technologies Ag Flange for semiconductor die
FR2961630B1 (fr) 2010-06-22 2013-03-29 Soitec Silicon On Insulator Technologies Appareil de fabrication de dispositifs semi-conducteurs
FR2963848B1 (fr) * 2010-08-11 2012-08-31 Soitec Silicon On Insulator Procede de collage par adhesion moleculaire a basse pression
US8338266B2 (en) 2010-08-11 2012-12-25 Soitec Method for molecular adhesion bonding at low pressure
FR2964193A1 (fr) 2010-08-24 2012-03-02 Soitec Silicon On Insulator Procede de mesure d'une energie d'adhesion, et substrats associes
US8841742B2 (en) 2011-09-27 2014-09-23 Soitec Low temperature layer transfer process using donor structure with material in recesses in transfer layer, semiconductor structures fabricated using such methods
US8673733B2 (en) 2011-09-27 2014-03-18 Soitec Methods of transferring layers of material in 3D integration processes and related structures and devices
TWI573198B (zh) 2011-09-27 2017-03-01 索泰克公司 在三度空間集積製程中轉移材料層之方法及其相關結構與元件
FR2992772B1 (fr) 2012-06-28 2014-07-04 Soitec Silicon On Insulator Procede de realisation de structure composite avec collage de type metal/metal
US9245836B2 (en) 2012-06-28 2016-01-26 Soitec Interposers including fluidic microchannels and related structures and methods
TWI602315B (zh) 2013-03-08 2017-10-11 索泰克公司 具有經組構成效能更佳之低帶隙主動層之感光元件及相關方法
US9646860B2 (en) * 2013-08-09 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Alignment systems and wafer bonding systems and methods
US9698035B2 (en) * 2013-12-23 2017-07-04 Lam Research Corporation Microstructures for improved wafer handling
JP6550741B2 (ja) * 2014-12-17 2019-07-31 富士電機株式会社 半導体装置の製造方法
US20160204078A1 (en) * 2015-01-14 2016-07-14 International Business Machines Corporation Bonding process using temperature controlled curvature change
CN105957817A (zh) * 2016-07-12 2016-09-21 武汉新芯集成电路制造有限公司 一种晶圆键合方法
EP3590130A1 (fr) * 2017-03-02 2020-01-08 EV Group E. Thallner GmbH Procédé et dispositif d'assemblage de puces
US10720345B1 (en) * 2017-09-15 2020-07-21 Intel Corporation Wafer to wafer bonding with low wafer distortion
TWI668739B (zh) * 2018-04-03 2019-08-11 環球晶圓股份有限公司 磊晶基板及其製造方法
CN109103079B (zh) * 2018-08-06 2021-06-01 济南晶正电子科技有限公司 一种纳米级单晶薄膜及其制备方法
US11829077B2 (en) 2020-12-11 2023-11-28 Kla Corporation System and method for determining post bonding overlay
US11782411B2 (en) 2021-07-28 2023-10-10 Kla Corporation System and method for mitigating overlay distortion patterns caused by a wafer bonding tool

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728694A (en) * 1970-09-28 1973-04-17 Technovation Thin film ferroelectric device
JPH0355822A (ja) * 1989-07-25 1991-03-11 Shin Etsu Handotai Co Ltd 半導体素子形成用基板の製造方法
JP3321882B2 (ja) * 1993-02-28 2002-09-09 ソニー株式会社 基板はり合わせ方法
JPH09196933A (ja) * 1996-01-19 1997-07-31 Canon Inc プローブとプローブの作製方法、及びプローブユニット、並びにこれを用いた情報記録再生装置
US5962792A (en) * 1997-06-02 1999-10-05 The Penn State Research Foundation Beam strain gauge
US6335263B1 (en) * 2000-03-22 2002-01-01 The Regents Of The University Of California Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
JP4698018B2 (ja) * 2000-12-12 2011-06-08 日本碍子株式会社 接着体の製造方法、および接着剤
US20020127821A1 (en) * 2000-12-28 2002-09-12 Kazuyuki Ohya Process for the production of thinned wafer
FR2821697B1 (fr) 2001-03-02 2004-06-25 Commissariat Energie Atomique Procede de fabrication de couches minces sur un support specifique et une application
FR2837620B1 (fr) * 2002-03-25 2005-04-29 Commissariat Energie Atomique Procede de transfert d'elements de substrat a substrat
US6969667B2 (en) * 2002-04-01 2005-11-29 Hewlett-Packard Development Company, L.P. Electrical device and method of making
CA2485022A1 (fr) * 2002-04-15 2003-10-23 Schott Ag Procede de liaison de substrats et element composite
EP1543564A2 (fr) * 2002-09-17 2005-06-22 Koninklijke Philips Electronics N.V. Dispositif camera, procede de fabrication associe, ensemble tranche
JP2004235465A (ja) * 2003-01-30 2004-08-19 Tokyo Electron Ltd 接合方法、接合装置及び封止部材
US20040262772A1 (en) * 2003-06-30 2004-12-30 Shriram Ramanathan Methods for bonding wafers using a metal interlayer
US20070148480A1 (en) * 2003-12-24 2007-06-28 Toyoaki Ishiwata Laminate
FR2866982B1 (fr) 2004-02-27 2008-05-09 Soitec Silicon On Insulator Procede de fabrication de composants electroniques
US7645635B2 (en) * 2004-08-16 2010-01-12 Micron Technology, Inc. Frame structure and semiconductor attach process for use therewith for fabrication of image sensor packages and the like, and resulting packages
US7429494B2 (en) * 2004-08-24 2008-09-30 Micron Technology, Inc. Microelectronic imagers with optical devices having integral reference features and methods for manufacturing such microelectronic imagers
US7060592B2 (en) * 2004-09-15 2006-06-13 United Microelectronics Corp. Image sensor and fabricating method thereof
WO2006078631A2 (fr) 2005-01-18 2006-07-27 Suss Micro Tec Inc. Outil de liaison a rendement eleve
TWI310583B (en) * 2005-07-01 2009-06-01 Touch Micro System Tech Method of thinning a wafer
JP5046366B2 (ja) * 2005-10-20 2012-10-10 信越化学工業株式会社 接着剤組成物及び該接着剤からなる接着層を備えたシート
US7648851B2 (en) 2006-03-06 2010-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating backside illuminated image sensor
JP4458116B2 (ja) * 2007-05-30 2010-04-28 住友電気工業株式会社 エピタキシャル層成長用ｉｉｉ族窒化物半導体層貼り合わせ基板および半導体デバイス
JP4442671B2 (ja) * 2007-09-21 2010-03-31 セイコーエプソン株式会社 接合膜付き基材、接合方法および接合体
FR2931014B1 (fr) * 2008-05-06 2010-09-03 Soitec Silicon On Insulator Procede d'assemblage de plaques par adhesion moleculaire
FR2935537B1 (fr) 2008-08-28 2010-10-22 Soitec Silicon On Insulator Procede d'initiation d'adhesion moleculaire

Also Published As

Publication number Publication date
TW201017739A (en) 2010-05-01
KR20120089696A (ko) 2012-08-13
US20130093033A9 (en) 2013-04-18
KR20120089695A (ko) 2012-08-13
FR2935537A1 (fr) 2010-03-05
US20110287604A1 (en) 2011-11-24
US20110278691A1 (en) 2011-11-17
US8163570B2 (en) 2012-04-24
WO2010023082A1 (fr) 2010-03-04
EP2319074A1 (fr) 2011-05-11
CN102017125A (zh) 2011-04-13
KR20100139023A (ko) 2010-12-31
JP2011524084A (ja) 2011-08-25
US20110045611A1 (en) 2011-02-24

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Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20120907

ST Notification of lapse

Effective date: 20140430