FR2780199B1 - Procede de fabrication d'un dispositif de memorisation ferroelectrique et dispositif obtenu par ce procede - Google Patents

Procede de fabrication d'un dispositif de memorisation ferroelectrique et dispositif obtenu par ce procede

Info

Publication number: FR2780199B1
Authority: FR; France
Prior art keywords: ferroelectric; manufacturing; memorization; device obtained; memorization device
Prior art date: 1998-06-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

FR9907317A

Other languages

English (en)

Other versions

FR2780199A1 (fr

Inventor

Dong Jin Jung

Ki Nam Kim

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Samsung Electronics Co Ltd

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-06-20

Filing date

1999-06-10

Publication date

2005-04-15

1999-06-10 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

1999-12-24 Publication of FR2780199A1 publication Critical patent/FR2780199A1/fr

2005-04-15 Application granted granted Critical

2005-04-15 Publication of FR2780199B1 publication Critical patent/FR2780199B1/fr

2019-06-10 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

FR9907317A 1998-06-20 1999-06-10 Procede de fabrication d'un dispositif de memorisation ferroelectrique et dispositif obtenu par ce procede Expired - Fee Related FR2780199B1 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1019980023272A KR100279297B1 (ko)	1998-06-20	1998-06-20	반도체 장치 및 그의 제조 방법

Publications (2)

Publication Number	Publication Date
FR2780199A1 FR2780199A1 (fr)	1999-12-24
FR2780199B1 true FR2780199B1 (fr)	2005-04-15

Family

ID=19540170

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR9907317A Expired - Fee Related FR2780199B1 (fr)	1998-06-20	1999-06-10	Procede de fabrication d'un dispositif de memorisation ferroelectrique et dispositif obtenu par ce procede

Country Status (8)

Country	Link
US (2)	US6172386B1 (fr)
JP (2)	JP4005270B2 (fr)
KR (1)	KR100279297B1 (fr)
CN (1)	CN100539013C (fr)
DE (1)	DE19926711B4 (fr)
FR (1)	FR2780199B1 (fr)
GB (1)	GB2338595B (fr)
TW (1)	TW418523B (fr)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6429120B1 (en)	2000-01-18	2002-08-06	Micron Technology, Inc.	Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
KR100279297B1 (ko) *	1998-06-20	2001-02-01	윤종용	반도체 장치 및 그의 제조 방법
KR100292819B1 (ko) *	1998-07-07	2001-09-17	윤종용	커패시터및그의제조방법
US6586790B2 (en) *	1998-07-24	2003-07-01	Kabushiki Kaisha Toshiba	Semiconductor device and method for manufacturing the same
US6174735B1 (en) *	1998-10-23	2001-01-16	Ramtron International Corporation	Method of manufacturing ferroelectric memory device useful for preventing hydrogen line degradation
JP3475100B2 (ja) *	1998-11-26	2003-12-08	シャープ株式会社	半導体装置の製造方法
US6440850B1 (en) *	1999-08-27	2002-08-27	Micron Technology, Inc.	Structure for an electrical contact to a thin film in a semiconductor structure and method for making the same
JP3276351B2 (ja) *	1999-12-13	2002-04-22	松下電器産業株式会社	半導体装置の製造方法
US6376370B1 (en) *	2000-01-18	2002-04-23	Micron Technology, Inc.	Process for providing seed layers for using aluminum, copper, gold and silver metallurgy process for providing seed layers for using aluminum, copper, gold and silver metallurgy
US6420262B1 (en) *	2000-01-18	2002-07-16	Micron Technology, Inc.	Structures and methods to enhance copper metallization
US7262130B1 (en) *	2000-01-18	2007-08-28	Micron Technology, Inc.	Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
US6651658B1 (en) *	2000-08-03	2003-11-25	Sequal Technologies, Inc.	Portable oxygen concentration system and method of using the same
KR100382719B1 (ko) *	2000-08-25	2003-05-09	삼성전자주식회사	강유전체 커패시터를 포함하는 반도체 장치 및 그 제조방법
US6887716B2 (en) *	2000-12-20	2005-05-03	Fujitsu Limited	Process for producing high quality PZT films for ferroelectric memory integrated circuits
EP1425782A2 (fr) *	2001-03-21	2004-06-09	Koninklijke Philips Electronics N.V.	Dispositif lectronique
DE10114406A1 (de) *	2001-03-23	2002-10-02	Infineon Technologies Ag	Verfahren zur Herstellung ferroelektrischer Speicherzellen
JP2003059905A (ja) *	2001-07-31	2003-02-28	Applied Materials Inc	エッチング方法、キャパシタの製造方法、および半導体装置
JP2003204043A (ja) *	2001-10-24	2003-07-18	Fujitsu Ltd	半導体装置及びその製造方法
JP2003152165A (ja) *	2001-11-15	2003-05-23	Fujitsu Ltd	半導体装置およびその製造方法
JP4641702B2 (ja) *	2002-11-20	2011-03-02	ソニー株式会社	強誘電体型不揮発性半導体メモリ及びその製造方法
US20040153611A1 (en) *	2003-02-04	2004-08-05	Sujat Jamil	Methods and apparatus for detecting an address conflict
US7287126B2 (en) *	2003-07-30	2007-10-23	Intel Corporation	Methods and apparatus for maintaining cache coherency
US7220665B2 (en) *	2003-08-05	2007-05-22	Micron Technology, Inc.	H2 plasma treatment
JP4308691B2 (ja) *	2004-03-19	2009-08-05	富士通マイクロエレクトロニクス株式会社	半導体基板および半導体基板の製造方法
CN100463182C (zh) *	2004-10-19	2009-02-18	精工爱普生株式会社	铁电体存储器及其制造方法
JP4257537B2 (ja) *	2005-06-02	2009-04-22	セイコーエプソン株式会社	強誘電体層の製造方法、電子機器の製造方法、強誘電体メモリ装置の製造方法、圧電素子の製造方法、およびインクジェット式記録ヘッドの製造方法
JP2007073909A (ja) *	2005-09-09	2007-03-22	Oki Electric Ind Co Ltd	半導体メモリの製造方法
US7772014B2 (en) *	2007-08-28	2010-08-10	Texas Instruments Incorporated	Semiconductor device having reduced single bit fails and a method of manufacture thereof
US9846664B2 (en)	2010-07-09	2017-12-19	Cypress Semiconductor Corporation	RFID interface and interrupt
US8723654B2 (en)	2010-07-09	2014-05-13	Cypress Semiconductor Corporation	Interrupt generation and acknowledgment for RFID
US9092582B2 (en)	2010-07-09	2015-07-28	Cypress Semiconductor Corporation	Low power, low pin count interface for an RFID transponder
JP2013120825A (ja)	2011-12-07	2013-06-17	Elpida Memory Inc	半導体装置及びその製造方法
US11621269B2 (en) *	2019-03-11	2023-04-04	Globalfoundries U.S. Inc.	Multi-level ferroelectric memory cell
CN113400696B (zh) *	2021-06-26	2022-02-22	宜宾学院	大口径高压纤维增强柔性复合管连接方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0503078B1 (fr) *	1990-09-28	2001-06-06	Ramtron International Corporation	Dispositif a semi-conducteurs
JPH04158570A (ja) *	1990-10-22	1992-06-01	Seiko Epson Corp	半導体装置の構造及びその製造方法
EP0516031A1 (fr) *	1991-05-29	1992-12-02	Ramtron International Corporation	Cellule de mémoire ferroélectrique empilée et procédé de fabrication
US5206788A (en) *	1991-12-12	1993-04-27	Ramtron Corporation	Series ferroelectric capacitor structure for monolithic integrated circuits and method
US5468684A (en) *	1991-12-13	1995-11-21	Symetrix Corporation	Integrated circuit with layered superlattice material and method of fabricating same
US5723171A (en) *	1992-10-23	1998-03-03	Symetrix Corporation	Integrated circuit electrode structure and process for fabricating same
JP3299837B2 (ja) *	1993-07-22	2002-07-08	シャープ株式会社	半導体記憶装置
JPH07111318A (ja) *	1993-10-12	1995-04-25	Olympus Optical Co Ltd	強誘電体メモリ
US5965942A (en) *	1994-09-28	1999-10-12	Sharp Kabushiki Kaisha	Semiconductor memory device with amorphous diffusion barrier between capacitor and plug
JPH08191133A (ja) *	1994-11-10	1996-07-23	Sony Corp	半導体素子のキャパシタ構造及びその作製方法
US5977577A (en) *	1994-11-15	1999-11-02	Radiant Technologies, Inc	Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation
CN1075243C (zh) *	1994-12-28	2001-11-21	松下电器产业株式会社	集成电路用电容元件及其制造方法
US5739049A (en) *	1995-08-21	1998-04-14	Hyundai Electronics Industries Co., Ltd.	Method for fabricating semiconductor device having a capacitor and a method of forming metal wiring on a semiconductor substrate
JPH09102587A (ja) *	1995-10-05	1997-04-15	Olympus Optical Co Ltd	強誘電体薄膜素子
KR100200704B1 (ko) *	1996-06-07	1999-06-15	윤종용	강유전체 메모리 장치 및 그 제조 방법
KR100197566B1 (ko) *	1996-06-29	1999-06-15	윤종용	강유전체 메모리 장치
JPH1022463A (ja) *	1996-07-02	1998-01-23	Sony Corp	積層構造及びその製造方法、キャパシタ構造並びに不揮発性メモリ
EP0837504A3 (fr) *	1996-08-20	1999-01-07	Ramtron International Corporation	Dispositif ferroélectrique partiellement ou complètement encapsulé
US5990513A (en) *	1996-10-08	1999-11-23	Ramtron International Corporation	Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion
KR100268453B1 (ko) *	1998-03-30	2000-11-01	윤종용	반도체 장치 및 그것의 제조 방법
KR100279297B1 (ko) *	1998-06-20	2001-02-01	윤종용	반도체 장치 및 그의 제조 방법

1998
- 1998-06-20 KR KR1019980023272A patent/KR100279297B1/ko not_active IP Right Cessation
1999
- 1999-04-23 GB GB9909488A patent/GB2338595B/en not_active Expired - Fee Related
- 1999-04-23 TW TW088106497A patent/TW418523B/zh not_active IP Right Cessation
- 1999-06-10 FR FR9907317A patent/FR2780199B1/fr not_active Expired - Fee Related
- 1999-06-11 DE DE19926711A patent/DE19926711B4/de not_active Expired - Fee Related
- 1999-06-18 CN CNB991090896A patent/CN100539013C/zh not_active Expired - Fee Related
- 1999-06-18 US US09/335,699 patent/US6172386B1/en not_active Expired - Fee Related
- 1999-06-21 JP JP17471499A patent/JP4005270B2/ja not_active Expired - Fee Related
2000
- 2000-10-30 US US09/698,262 patent/US6515323B1/en not_active Expired - Fee Related
2007
- 2007-07-02 JP JP2007174271A patent/JP2007294995A/ja active Pending

Also Published As

Publication number	Publication date
CN100539013C (zh)	2009-09-09
KR20000002485A (ko)	2000-01-15
GB9909488D0 (en)	1999-06-23
FR2780199A1 (fr)	1999-12-24
TW418523B (en)	2001-01-11
JP2007294995A (ja)	2007-11-08
KR100279297B1 (ko)	2001-02-01
JP2000031404A (ja)	2000-01-28
GB2338595A (en)	1999-12-22
DE19926711A1 (de)	1999-12-23
JP4005270B2 (ja)	2007-11-07
US6515323B1 (en)	2003-02-04
GB2338595B (en)	2000-08-23
CN1239828A (zh)	1999-12-29
US6172386B1 (en)	2001-01-09
DE19926711B4 (de)	2006-08-24

Publication	Publication Date	Title
FR2780199B1 (fr)	2005-04-15	Procede de fabrication d'un dispositif de memorisation ferroelectrique et dispositif obtenu par ce procede
FR2768836B1 (fr)	2000-06-16	Dispositif d'identification et procede de fabrication du dispositif associe
FR2780200B1 (fr)	2003-09-05	Dispositif et procede de formation d'un dispositif presentant une cavite a atmosphere controlee
EP1026755A4 (fr)	2009-11-11	Procede et dispositif de refroidissement d'un supraconducteur
FR2789821B1 (fr)	2008-07-18	Procede et dispositif de reglage et d'ajustement d'actionneurs piezoelectriques
FR2799305B1 (fr)	2004-06-18	Procede de fabrication d'un dispositif semi-conducteur a grille enveloppante et dispositif obtenu
EP1122769A4 (fr)	2004-10-13	Dispositif a semi-conducteurs et procede de fabrication de ce dernier
FR2750796B1 (fr)	1999-08-27	Procede de fabrication d'un transistor en couche mince
EP0862222A4 (fr)	1999-12-01	Dispositif a semi-conducteurs et procede de fabrication
FR2776833B1 (fr)	2005-04-15	Condensateur ferroelectrique et procede de fabrication d'un dispositif semi-conducteur le comprenant
FR2747234B1 (fr)	2000-07-21	Procede de fabrication d'un transistor en couche mince, et transistor en couche mince
FR2724489B1 (fr)	1998-09-25	Dispositif a semiconducteur et son procede de fabrication
FR2703221B3 (fr)	1995-03-24	Appareil et procede de fabrication d'un pate.
EP0738004A4 (fr)	1997-04-16	Procede et dispositif de fabrication d'un substrat a semi-conducteurs
FR2741197B1 (fr)	2000-01-28	Procede de fabrication d'un module de conversion thermoelectrique
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FR2779008B1 (fr)	2005-08-26	Procede de fabrication d'un dispositif a semiconducteur
EP1030375A4 (fr)	2001-07-04	Dispositif a semiconducteur et son procede de fabrication
FR2752380B1 (fr)	1998-10-30	Procede de fabrication d'un dispositif a liberation controlee
FR2782839B1 (fr)	2003-08-15	Procede de fabrication d'un dispositif a semiconducteur
FR2751126B1 (fr)	1999-10-22	Procede de fabrication d'un dispositif d'affichage, et panneau d'affichage
FR2724068B1 (fr)	1997-08-14	Dispositif laser a semi-conducteur et procede de fabrication du dispositif laser a semi-conducteur
FR2738500B1 (fr)	1997-11-28	Dispositif d'enlevement d'impurete et procede de fabrication

Legal Events

Date	Code	Title	Description
2015-03-27	ST	Notification of lapse	Effective date: 20150227