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FR2724068B1 - Dispositif laser a semi-conducteur et procede de fabrication du dispositif laser a semi-conducteur - Google Patents

Dispositif laser a semi-conducteur et procede de fabrication du dispositif laser a semi-conducteur

Info

Publication number
FR2724068B1
FR2724068B1 FR9509985A FR9509985A FR2724068B1 FR 2724068 B1 FR2724068 B1 FR 2724068B1 FR 9509985 A FR9509985 A FR 9509985A FR 9509985 A FR9509985 A FR 9509985A FR 2724068 B1 FR2724068 B1 FR 2724068B1
Authority
FR
France
Prior art keywords
semiconductor laser
laser device
making
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9509985A
Other languages
English (en)
Other versions
FR2724068A1 (fr
Inventor
Yoriko Tanigami
Tomoko Kadowaki
Akira Takemoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2724068A1 publication Critical patent/FR2724068A1/fr
Application granted granted Critical
Publication of FR2724068B1 publication Critical patent/FR2724068B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR9509985A 1994-08-23 1995-08-22 Dispositif laser a semi-conducteur et procede de fabrication du dispositif laser a semi-conducteur Expired - Fee Related FR2724068B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19834694A JP3421140B2 (ja) 1994-08-23 1994-08-23 半導体レーザ装置の製造方法，および半導体レーザ装置

Publications (2)

Publication Number Publication Date
FR2724068A1 FR2724068A1 (fr) 1996-03-01
FR2724068B1 true FR2724068B1 (fr) 1997-08-14

Family

ID=16389599

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9509985A Expired - Fee Related FR2724068B1 (fr) 1994-08-23 1995-08-22 Dispositif laser a semi-conducteur et procede de fabrication du dispositif laser a semi-conducteur

Country Status (4)

Country Link
US (1) US5596592A (fr)
JP (1) JP3421140B2 (fr)
DE (1) DE19531052A1 (fr)
FR (1) FR2724068B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09237940A (ja) * 1995-12-28 1997-09-09 Mitsubishi Electric Corp 半導体装置，及びその製造方法
JP2776375B2 (ja) * 1996-06-20 1998-07-16 日本電気株式会社 半導体レーザ
JP3907854B2 (ja) 1998-12-07 2007-04-18 富士通株式会社 半導体レーザ及びその製造方法
JP2007049007A (ja) * 2005-08-11 2007-02-22 Mitsubishi Electric Corp 半導体レーザ素子およびその製造方法
JP2008119322A (ja) * 2006-11-14 2008-05-29 Aihou:Kk 鋏
JP5920043B2 (ja) * 2012-06-15 2016-05-18 三菱電機株式会社 半導体レーザ及びその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117288A (ja) * 1982-12-24 1984-07-06 Mitsubishi Electric Corp 半導体発光装置の製造方法
JPS60102790A (ja) * 1983-11-09 1985-06-06 Mitsubishi Electric Corp 半導体発光装置の製造方法
JPS62159488A (ja) * 1986-01-08 1987-07-15 Matsushita Electric Ind Co Ltd 半導体レ−ザの製造方法
JPH0648743B2 (ja) * 1987-02-18 1994-06-22 三菱電機株式会社 半導体レ−ザ装置の製造方法
JPH0831659B2 (ja) * 1988-05-27 1996-03-27 富士通株式会社 半導体発光素子の製造方法
JPH04317384A (ja) * 1991-04-16 1992-11-09 Mitsubishi Electric Corp 半導体発光装置
US5316967A (en) * 1992-01-21 1994-05-31 Mitsubishi Denki Kabushiki Kaisha Method for producing semiconductor device
JP3108183B2 (ja) * 1992-02-10 2000-11-13 古河電気工業株式会社 半導体レーザ素子とその製造方法
US5383213A (en) * 1992-05-08 1995-01-17 The Furukawa Electric Co., Ltd. Semiconductor device with current confinement structure
JP2823476B2 (ja) * 1992-05-14 1998-11-11 三菱電機株式会社 半導体レーザおよびその製造方法
JPH0722691A (ja) * 1993-06-30 1995-01-24 Mitsubishi Electric Corp 半導体レーザとその製造方法

Also Published As

Publication number Publication date
DE19531052A1 (de) 1996-02-29
US5596592A (en) 1997-01-21
JPH0864899A (ja) 1996-03-08
FR2724068A1 (fr) 1996-03-01
JP3421140B2 (ja) 2003-06-30

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Legal Events

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Effective date: 20130430