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FR2765396B1 - Dispositif a semiconducteurs avec une structure d'isolation et procede de fabrication - Google Patents

Dispositif a semiconducteurs avec une structure d'isolation et procede de fabrication

Info

Publication number
FR2765396B1
FR2765396B1 FR9800606A FR9800606A FR2765396B1 FR 2765396 B1 FR2765396 B1 FR 2765396B1 FR 9800606 A FR9800606 A FR 9800606A FR 9800606 A FR9800606 A FR 9800606A FR 2765396 B1 FR2765396 B1 FR 2765396B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
insulation structure
insulation
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9800606A
Other languages
English (en)
Other versions
FR2765396A1 (fr
Inventor
Shigenobu Maeda
Toshiaki Iwamatsu
Shigeto Maegawa
Takashi Ipposhi
Yasuo Yamaguchi
Yuuichi Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2765396A1 publication Critical patent/FR2765396A1/fr
Application granted granted Critical
Publication of FR2765396B1 publication Critical patent/FR2765396B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/765—Making of isolation regions between components by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR9800606A 1997-06-27 1998-01-21 Dispositif a semiconducteurs avec une structure d'isolation et procede de fabrication Expired - Fee Related FR2765396B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9171773A JPH1117000A (ja) 1997-06-27 1997-06-27 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
FR2765396A1 FR2765396A1 (fr) 1998-12-31
FR2765396B1 true FR2765396B1 (fr) 2001-06-22

Family

ID=15929421

Family Applications (2)

Application Number Title Priority Date Filing Date
FR9800606A Expired - Fee Related FR2765396B1 (fr) 1997-06-27 1998-01-21 Dispositif a semiconducteurs avec une structure d'isolation et procede de fabrication
FR0101304A Expired - Fee Related FR2803095B1 (fr) 1997-06-27 2001-01-31 Dispositif a semiconducteurs avec une structure d'isolation et procede de fabrication

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR0101304A Expired - Fee Related FR2803095B1 (fr) 1997-06-27 2001-01-31 Dispositif a semiconducteurs avec une structure d'isolation et procede de fabrication

Country Status (7)

Country Link
US (1) US6191450B1 (fr)
JP (1) JPH1117000A (fr)
KR (1) KR100257594B1 (fr)
CN (1) CN1118868C (fr)
DE (1) DE19805692C2 (fr)
FR (2) FR2765396B1 (fr)
TW (1) TW357433B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3594779B2 (ja) 1997-06-24 2004-12-02 株式会社ルネサステクノロジ 半導体装置の製造方法
US7163851B2 (en) * 2002-08-26 2007-01-16 International Business Machines Corporation Concurrent Fin-FET and thick-body device fabrication
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
WO2005065385A2 (fr) * 2003-12-30 2005-07-21 Fairchild Semiconductor Corporation Dispositifs d'energie a semi-conducteurs et procedes de fabrication associes
JP2007220755A (ja) * 2006-02-14 2007-08-30 Toshiba Corp 半導体装置及びその製造方法
JP5499455B2 (ja) * 2007-10-22 2014-05-21 株式会社デンソー ＳＯＩ（Ｓｉｌｉｃｏｎｏｎｉｎｓｕｌａｔｏｒ）構造の半導体装置およびその製造方法
DE102009023420B3 (de) * 2009-05-29 2011-01-20 Texas Instruments Deutschland Gmbh Verfahren zur Herstellung einer Halbleitervorrichtung und Halbleitervorrichtung (z.B. Doppelgate-Transistor)
AU2010226940C1 (en) * 2010-10-02 2011-07-14 Bui, Dac Thong Mr Auto switch MOS-FET
CN103545194B (zh) * 2013-10-11 2018-03-02 中国电子科技集团公司第十三研究所 射频功率vdmosfet屏蔽栅结构的制作方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686000A (en) * 1985-04-02 1987-08-11 Heath Barbara A Self-aligned contact process
JP2505736B2 (ja) * 1985-06-18 1996-06-12 キヤノン株式会社 半導体装置の製造方法
US4843023A (en) * 1985-09-25 1989-06-27 Hewlett-Packard Company Process for forming lightly-doped-drain (LDD) without extra masking steps
US4818715A (en) * 1987-07-09 1989-04-04 Industrial Technology Research Institute Method of fabricating a LDDFET with self-aligned silicide
US4786609A (en) * 1987-10-05 1988-11-22 North American Philips Corporation, Signetics Division Method of fabricating field-effect transistor utilizing improved gate sidewall spacers
US4922311A (en) * 1987-12-04 1990-05-01 American Telephone And Telegraph Company Folded extended window field effect transistor
US5304829A (en) * 1989-01-17 1994-04-19 Kabushiki Kaisha Toshiba Nonvolatile semiconductor device
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors
US5367186A (en) * 1992-01-28 1994-11-22 Thunderbird Technologies, Inc. Bounded tub fermi threshold field effect transistor
JPH06302779A (ja) 1993-04-09 1994-10-28 Nippon Steel Corp 半導体装置及びその製造方法
JPH07201967A (ja) 1993-12-28 1995-08-04 Nippon Steel Corp 半導体装置の製造方法
JPH07283300A (ja) 1994-04-01 1995-10-27 Nippon Steel Corp 半導体装置及びその製造方法
US5641989A (en) 1994-06-03 1997-06-24 Nippon Steel Corporation Semiconductor device having field-shield isolation structures and a method of making the same
JPH0831928A (ja) 1994-07-12 1996-02-02 Nippon Steel Corp 半導体装置の製造方法
US5640032A (en) 1994-09-09 1997-06-17 Nippon Steel Corporation Non-volatile semiconductor memory device with improved rewrite speed
JPH08162523A (ja) 1994-12-06 1996-06-21 Nippon Steel Corp 半導体装置及びその製造方法
DE69531282T2 (de) 1994-12-20 2004-05-27 STMicroelectronics, Inc., Carrollton Isolierung durch aktive Transistoren mit geerdeten Torelektroden
JPH0927600A (ja) 1995-07-07 1997-01-28 Nippon Steel Corp 半導体装置およびその製造方法
US5783469A (en) * 1996-12-10 1998-07-21 Advanced Micro Devices, Inc. Method for making nitrogenated gate structure for improved transistor performance

Also Published As

Publication number Publication date
KR100257594B1 (ko) 2000-06-01
US6191450B1 (en) 2001-02-20
DE19805692C2 (de) 2001-04-26
TW357433B (en) 1999-05-01
FR2803095B1 (fr) 2004-12-10
DE19805692A1 (de) 1999-01-07
FR2765396A1 (fr) 1998-12-31
JPH1117000A (ja) 1999-01-22
CN1204146A (zh) 1999-01-06
KR19990006291A (ko) 1999-01-25
CN1118868C (zh) 2003-08-20
FR2803095A1 (fr) 2001-06-29

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20081029