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FR2718286B1 - Procédé d'attaque de tranches de semi-conducteur. - Google Patents

Procédé d'attaque de tranches de semi-conducteur.

Info

Publication number
FR2718286B1
FR2718286B1 FR9503777A FR9503777A FR2718286B1 FR 2718286 B1 FR2718286 B1 FR 2718286B1 FR 9503777 A FR9503777 A FR 9503777A FR 9503777 A FR9503777 A FR 9503777A FR 2718286 B1 FR2718286 B1 FR 2718286B1
Authority
FR
France
Prior art keywords
attacking
semiconductor wafers
wafers
semiconductor
attacking semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9503777A
Other languages
English (en)
Other versions
FR2718286A1 (fr
Inventor
Minekazu Sakai
Tsuyoshi Fukada
Nobukazu Ohba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6075694A external-priority patent/JP3351089B2/ja
Priority claimed from JP13659194A external-priority patent/JP3348518B2/ja
Priority claimed from JP11713294A external-priority patent/JP3351100B2/ja
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Publication of FR2718286A1 publication Critical patent/FR2718286A1/fr
Application granted granted Critical
Publication of FR2718286B1 publication Critical patent/FR2718286B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00214Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063Electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/977Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Pressure Sensors (AREA)
FR9503777A 1994-03-30 1995-03-30 Procédé d'attaque de tranches de semi-conducteur. Expired - Lifetime FR2718286B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6075694A JP3351089B2 (ja) 1994-03-30 1994-03-30 半導体装置及びその製造方法
JP13659194A JP3348518B2 (ja) 1994-05-25 1994-05-25 半導体装置およびその製造方法
JP11713294A JP3351100B2 (ja) 1994-05-30 1994-05-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
FR2718286A1 FR2718286A1 (fr) 1995-10-06
FR2718286B1 true FR2718286B1 (fr) 1999-06-11

Family

ID=27297289

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9503777A Expired - Lifetime FR2718286B1 (fr) 1994-03-30 1995-03-30 Procédé d'attaque de tranches de semi-conducteur.

Country Status (3)

Country Link
US (1) US5677248A (fr)
DE (1) DE19511596B4 (fr)
FR (1) FR2718286B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6027859A (en) * 1997-12-17 2000-02-22 Advanced Micro Devices, Inc. Semiconductor substrate having extended scribe line test structure and method of fabrication thereof
JP2000267258A (ja) * 1999-03-16 2000-09-29 Nec Corp レチクル
JP3715193B2 (ja) * 2000-10-20 2005-11-09 セイコーインスツル株式会社 リニアイメージセンサic
JP4306162B2 (ja) * 2001-08-22 2009-07-29 株式会社デンソー 半導体装置およびその製造方法
CN101274742B (zh) * 2007-03-28 2010-07-28 中国科学院微电子研究所 一种抗水流冲击的体硅腐蚀配套设备
DE102013217108B4 (de) 2013-08-28 2016-02-25 Robert Bosch Gmbh Herstellungsverfahren für eine mikromechanische Sensorvorrichtung mit geätzter Rückseitenkaverne, entsprechende Ätzvorrichtung und entsprechende mikromechanische Sensorvorrichtung
DE102018103180A1 (de) * 2018-02-13 2019-08-14 First Sensor AG Anordnung für einen halbleiterbasierten Drucksensorchip und Drucksensorchip

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3721593A (en) * 1971-08-13 1973-03-20 Motorola Inc Etch stop for koh anisotropic etch
JPH01251631A (ja) * 1988-03-30 1989-10-06 Matsushita Electron Corp ウェハ
JPH02138740A (ja) * 1988-08-29 1990-05-28 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5223444A (en) * 1989-02-15 1993-06-29 Societe D'applications Generales Method for making a pressure sensor of the semiconductor-on-insulator type
JP2576245B2 (ja) * 1990-01-11 1997-01-29 富士電機株式会社 半導体圧力センサの製造方法
JP3151816B2 (ja) * 1990-08-06 2001-04-03 日産自動車株式会社 エッチング方法
JP3143915B2 (ja) * 1990-09-20 2001-03-07 日産自動車株式会社 電解エッチングされる半導体基板
JPH04239183A (ja) * 1991-01-11 1992-08-27 Mitsubishi Electric Corp 半導体加工方法
JPH05283517A (ja) * 1992-03-31 1993-10-29 Hitachi Ltd 半導体集積回路
DE69334194T2 (de) * 1992-04-22 2008-12-04 Denso Corp., Kariya-shi Verfahren zum Erzeugen einer Halbleitervorrichtung

Also Published As

Publication number Publication date
DE19511596A1 (de) 1995-10-05
US5677248A (en) 1997-10-14
DE19511596B4 (de) 2007-11-22
FR2718286A1 (fr) 1995-10-06

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