FI110311B - Förfarande och anordning för eliminering av substanser från gaser - Google Patents
Förfarande och anordning för eliminering av substanser från gaser Download PDFInfo
- Publication number
- FI110311B FI110311B FI991628A FI991628A FI110311B FI 110311 B FI110311 B FI 110311B FI 991628 A FI991628 A FI 991628A FI 991628 A FI991628 A FI 991628A FI 110311 B FI110311 B FI 110311B
- Authority
- FI
- Finland
- Prior art keywords
- reaction
- gas phase
- gases
- surface area
- gas
- Prior art date
Links
- 239000007789 gas Substances 0.000 title claims description 46
- 238000000034 method Methods 0.000 title claims description 35
- 239000000126 substance Substances 0.000 title claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 53
- 239000000376 reactant Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 238000010574 gas phase reaction Methods 0.000 claims description 9
- 239000007795 chemical reaction product Substances 0.000 claims description 8
- 239000011491 glass wool Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011148 porous material Substances 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- 239000007770 graphite material Substances 0.000 claims 2
- 238000003746 solid phase reaction Methods 0.000 claims 1
- 238000010671 solid-state reaction Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 description 14
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 13
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 10
- 239000006227 byproduct Substances 0.000 description 10
- 239000002699 waste material Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- 238000005086 pumping Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- JTJMJGYZQZDUJJ-UHFFFAOYSA-N phencyclidine Chemical class C1CCCCN1C1(C=2C=CC=CC=2)CCCCC1 JTJMJGYZQZDUJJ-UHFFFAOYSA-N 0.000 description 1
- 239000012429 reaction media Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002910 solid waste Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Biomedical Technology (AREA)
- Environmental & Geological Engineering (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Treating Waste Gases (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Claims (10)
1. Förfarande för avlägsnande av substanser ingäende i avgaser i en ALD-gasfasreaktionsprocess avsedda at avlägsnas, kännetecknad avatt man läter 5 gasema komma i kontakt med ett material med stor yta, vilket halls under väsentligt samma förhällanden som de förhällanden som räder under gasfasprocessen, och man utsätter materialet med stor yta för ytreaktioner med substanser i gaser för att bilda en reaktionsprodukt i fast tillständ pä ytan av materialet med stor yta och för att eliminera substansema frän gasema. 10
2. Förfarande enligt patentkrav 1,kännetecknad av att man läter överskottet av gasfaspulsema frän ALD-processens reaktionsämnen komma i kontakt med ett poröst substrat för att forma en reaktionsprodukt pä materialets yta. 15
3. Förfarande enligt patentkrav 1 eller 2, k ä n n e t e c k n a d av att det porösa materialet omfattar ett material, som är ett poröst grafitmaterial, ett poröst keramiskt material, aluminiumoxid, kiseldioxid eller glasull.
« · • * •' · * 4. Förfarande enligt nägot av de föregäende patentkraven, kännetecknad av att • · • · · ' · ’: 20 ätminstone en del av gasema är gaser, som innehäller klorid. • · • « ·
5. Förfarande enligt nägot av de föregäende patentkraven, kännetecknad av att t · · • · · .. gasfasreaktionsprocessen och reaktionen med materialet med stor yta realiseras i samma I · • · · reaktionsutrymme. 25
• » • · · • » · # ’ · · | 6. Förfarande enligt nägot av patentkraven 1-4, k ä n n e t e c k n a d av att materialet a a a med stor yta är placerat i ett skilt reaktionsutrymme, som är inkopplat med a a ',,, reaktionsutrymmet för gasfasreaktionen. a * a a a • * » * • a •... · 30
7. Anordning för avlägsnande av substanser ingäende i avgaser i en ALD- gasfasreaktionsprocess avsedda att avlägsnas, vilken anordning omfattar en >3 110311 reaktionszon, som är anordnad nedströms med avseende pä reaktionsprocessen, kännetecknad avatt reaktionszonen ä sin sida omfattar ett material med stor yta och som kan hällas under samma förhallanden som de somrader under gasfasprocessen sä, att den nämnda reaktionszonen vidare omfattar gasströmningskanaler för att mata in 5 utsläppsgaser frän gasfasprocessen i materialet med stor yta och gasutloppskanaler för att avlägsna gas ur materialet med stor yta.
8. Anordning enligt patentkrav 7, k ä n n e t e c k n a d av att reaktionszonen är anordnad i stommen till kroppen av den reaktor där gasfasreaktionen realiseras. 10
9. Anordning enligt patentkrav 7, kännetecknad avatt reaktionszonen är anordnad i ett skillt reaktionskärl, som är förbundet med gasfasreaktom och som halls under samma förhallanden.
10. Anordning enligt nägot av patentkraven 7-9, kännetecknad avatt materialet med stor yta är ett poröst grafitmaterial, ett poröst keramiskt material, aluminiumoxid, kiseldioxid eller glasull. • · • » • · * • · • ·
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI991628A FI110311B (sv) | 1999-07-20 | 1999-07-20 | Förfarande och anordning för eliminering av substanser från gaser |
| TW089114140A TW555585B (en) | 1999-07-20 | 2000-07-14 | Method and apparatus for removing substances from gases |
| US09/619,820 US6506352B1 (en) | 1999-07-20 | 2000-07-20 | Method for removing substances from gases |
| JP2000220782A JP2001062244A (ja) | 1999-07-20 | 2000-07-21 | 気体から物質を除去するための方法と装置 |
| US10/205,296 US20020187084A1 (en) | 1999-07-20 | 2002-07-24 | Method and apparatus for removing substances from gases |
| US12/138,358 US7799300B2 (en) | 1999-07-20 | 2008-06-12 | Method and apparatus for removing substances from gases |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI991628A FI110311B (sv) | 1999-07-20 | 1999-07-20 | Förfarande och anordning för eliminering av substanser från gaser |
| FI991628 | 1999-07-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FI991628L FI991628L (sv) | 2001-01-21 |
| FI110311B true FI110311B (sv) | 2002-12-31 |
Family
ID=8555096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI991628A FI110311B (sv) | 1999-07-20 | 1999-07-20 | Förfarande och anordning för eliminering av substanser från gaser |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US6506352B1 (sv) |
| JP (1) | JP2001062244A (sv) |
| FI (1) | FI110311B (sv) |
| TW (1) | TW555585B (sv) |
Families Citing this family (333)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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2008
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Also Published As
| Publication number | Publication date |
|---|---|
| FI991628L (sv) | 2001-01-21 |
| JP2001062244A (ja) | 2001-03-13 |
| US7799300B2 (en) | 2010-09-21 |
| TW555585B (en) | 2003-10-01 |
| US20090074964A1 (en) | 2009-03-19 |
| US20020187084A1 (en) | 2002-12-12 |
| US6506352B1 (en) | 2003-01-14 |
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