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FI117978B - Förfarande och anordning för uppbyggnad av en tunnfilm på ett substrat - Google Patents

Förfarande och anordning för uppbyggnad av en tunnfilm på ett substrat Download PDF

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Publication number
FI117978B
FI117978B FI20000899A FI20000899A FI117978B FI 117978 B FI117978 B FI 117978B FI 20000899 A FI20000899 A FI 20000899A FI 20000899 A FI20000899 A FI 20000899A FI 117978 B FI117978 B FI 117978B
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reaction
reaction chamber
vapor phase
gas
reactant
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FI20000899A
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English (en)
Finnish (fi)
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FI20000899A0 (sv
FI20000899L (sv
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Sven Lindfors
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Asm Int
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Priority to TW089107028A priority Critical patent/TW496907B/zh
Priority to FI20000899A priority patent/FI117978B/sv
Publication of FI20000899A0 publication Critical patent/FI20000899A0/sv
Priority to JP2001117413A priority patent/JP2001348666A/ja
Priority to US09/836,674 priority patent/US7105054B2/en
Publication of FI20000899L publication Critical patent/FI20000899L/sv
Priority to US10/270,745 priority patent/US7060132B2/en
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Publication of FI117978B publication Critical patent/FI117978B/sv

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Claims (22)

1. Forfarande för uppbyggnad av en tunnfilm pä ett substrat, vid vilket förfarande ett substrat placeras i en reaktionskammare och utsätts för ytreaktioner med ett flertal äng- 5 fasreaktanter enligt ALD-förfarandet för bildning av en tunnfilm, vilket förfarande om-fattar steg där: - ängfasreaktanter inmatas i reaktionskammaren i form av upprepade och växelvisa ängfaspulser, och - ängfasreaktantema omsätts med ytan av substratet för bildning av ett tunnfilms- 10 ämne pä substratet, ^ kännetecknat avatt - följande ängfaspuls bringas i kontakt med restkomponenter av föregäende äng-faspuls för att ge en reaktionsprodukt bildad av reaktanten i följande ängfaspuls och reaktanten i föregäende ängfaspuls innan följande ängfaspuls inmatas i reak- 15 tionskammaren.
2. Förfarande enligt krav 1,kännetecknat av att följande ängfaspuls omsätts med restkomponenterna av föregäende ängfaspuls under omständigheter som leder tili ke-misk ängdeponering. 20 :T:
3. Förfarande enligt krav 1 eller 2, kännetecknat avatt följande ängfaspuls om- • » · l/· · sätts med restkomponenterna av föregäende ängfaspuls i en första reaktionszon som är • · Vf·' placerad uppströms i förhällande tili en andra reaktionszon, som omfattar reaktom som ··· . :...· används under förhällanden som leder till ALD. C: 25 • · »
4. Förfarande enligt krav 3, k ä n n e t e c k n a t av att den första reaktionszonen är placerad omedelbart invid den andra reaktionszonen och den är inrättad att fritt kommu- • « · *···* nicera med den andra reaktionszonen. • · · ♦ · • * * * ♦ *·*" 30
5. Förfarande enligt nägot av föregäende krav, k ä n n e t e c k n a t av att reaktanterna *: : inmatas i reaktionskammaren var och en separat from sin egen källa via en separat mat- * ningskanal, och reaktantemas matningskanaler är inbördes förenade uppströms tili reak-tionskammaren för att bilda en första reaktionszon i vilken päföljande reaktantpuls i 17 11 7978 gasfas möter restema av den föregäende reaktantpulsen för bildning av en reaktionspro-dukt innan följande gasfaspuls inmatas i reaktionskammaren.
6. Forfarandeenligtnägotavföregäendekrav3-5,kännetecknat avattden 5 första reaktionszonen används vid förhällanden som leder tili kemisk ängdeponering för bildning av en fast produkt.
7. Forfarande enligt nägot av föregäende krav 1— 6, kännetecknat avatt den följande reaktionspulsen omsätts med restflödet av den föregäende reaktantpulsen i och 10 för bildning av en fast produkt för att utarma restema av föregäende reaktant och för att därigenom hindra den frän att tränga in i reaktionskammaren samtidigt med följande gasfaspuls.
8. Förfarande enligt nägot av föregäende krav 3 — 7, kännetecknat av att den 15 första reaktionszonen används vid samma temperatur som den andra reaktionszonen.
9. Förfarande enligt nägot av de föregäende kraven, kännetecknat av att reak-tionsprodukten avlägsnas skilt frän den tunnfilm som byggs upp med ALD. 20
10. Förfarande enligt krav 9, kännetecknat av att reaktionsprodukten deponeras pä ett substrat som kan kasseras. * • · · * * * * · · • · :i.’
11. Förfarande enligt krav 9, kännetecknat av att reaktionsprodukten deponeras *·» pä insidan av den anordning som avgränsar det första reaktionsutrymmet, och reak- • * ♦ 25 tionsprodukten avlägsnas genom putsning av väggama. • · * • · «
12. Förfarande enligt nägot av de föregäende kraven, kännetecknat av att kon-* · · » centrationen av restkomponenter frän den föregäende ängfaspulsen i den följande gas- • · · • · *···* faspulsen minskas till under 1 ppm innan följande gasfaspuls inmatas i reaktionskam- "·*: 30 maren. Φ
· · · · • · :*·*· 13. Förfarande enligt nägot av föregäende krav 3 - 12, kä nnet e c k n at av att kon- • * · :***♦ centrationen av restkomponenter av den föregäende ängfaspulsen i den första reaktions- ··· 18 1 1 7978 zonen minskas till mindre än 1 volym-% innan restkomponentema bringas i kontakt med den följande ängfaspulsen.
14. Förfarande enligt krav 13, k ä n n e t e c k n a t av att koncentrationen av restkom-5 ponenter av den föregäende ängfaspulsen minskas genom spolning av reaktionskamma- ren och av de gasflödeskanaler som fritt kommunicerar med reaktionskammaren.
15. Förfarande enligt krav 14, kännetecknat avatt spolningen utfors genom in-matning av inaktiv gas i reaktionskammaren och i gasflödeskanalema samtidigt som 10 reaktionskammaren tömmes.
16. Förfarande enligt nägot av föregäende krav, kännetecknat av att trycket i reaktionskammaren och i de gasflödeskanaler som fritt kommunicerar med reaktionskammaren är 1 tili 100 mbar. 15
17. Anordning för uppbyggnad av tunnfilmerpä ett substrat genom att enligt ALD-förfarandet utsätta substratet för växelvis upprepade ytreaktioner hos ängfasreaktanter för bildning av en fast tunnfilm pä substratet, vilken anordning omfattar - en reaktionskammare, i vilken substratet kan placeras, 20. ett flertal inflödeskanaler som kommunicerar med reaktionskammaren och som är lämpliga för inmatning av de reaktanter som används vid processen för upp- byggnad av tunnfilmen i form av ängfaspulser i reaktionskammaren, och ; : - minst en utflödeskanal som kommunicerar med reaktionskammaren och som är • · • * · lämplig för att tilläta utflöde av reaktionsprodukter och överlopps mängder av t · · !,„· 25 reaktanter frän reaktionsrummet, • · ·../ kännetecknad avatt - en förreaktionskammare är anordnad omedelbart uppströms tili reaktionskam- * · · * ·: · * maren, varvid förreaktionskammaren bildar en första reaktionszon där reaktan- * · • · '···* tema i successiva ängfaspulser kan omsättas med varandra i ängfas för bildning *"" 30 av en fast produkt, medan reaktionskammaren som bildar en andra reaktionszon kan användas vid förhällanden som leder tili ALD-uppbyggnad av en tunnfilm. · • · · • · ····_· • *· Φ a • · • · Φ 19 1 1 7978
18. Anordning enligt krav 17, k ä n n e t e c k n a d av att den första reaktionszonen kan användas vid fÖrhällanden som leder till CVD.
19. Anordning enligt krav 18, kännetecknad av att den första reaktionszonen är 5 inrättad att innehälla ett substrat pä vilket CVD-uppbyggda reaktionsprodukter kan de- poneras.
20. Anordning enligt nägot av föregäende krav 17-19, kännetecknad av att den första reaktionszonen omfattar ett gasutrymme som inbördes förenar de skilda inflödes- 10 kanalema för gasfasreaktantema uppströms tili reaktionskammaren.
21. Anordning enligt nägot av föregäende krav 17 - 19, k ä n n e t e c k n a d av att av gasflödeskanalema är minst en och företrädesvis alla lämpliga för inmatning av inert gas i reaktionskammaren. 15
22. Anordning enligt nägot av föregäende krav 17 - 21, k ä n n e t e c k n a d av att förreaktionskammaren och reaktionskammaren bildar ett gasutrymme, som omfattar ett flertal substrat som är anordnade i serie i förhällande tili gasflödesriktningen för ängfas-pulsema, varvid det första substratet bildar en yta som är lämplig för uppbyggnad av 20 tunnfilm medelst kemisk ängdeponering. • 1 · • · · ···... · 1 • · 1 • 1 • 1 • · * 1 • · · • · • ·1 · !1 ·· ··1 *«· • · · *·· * · · • · · • · ♦ • · · • · • · • · · ·1··» • · ····· • · • · • · · • · · · · * · • · ····:.
FI20000899A 2000-04-14 2000-04-14 Förfarande och anordning för uppbyggnad av en tunnfilm på ett substrat FI117978B (sv)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW089107028A TW496907B (en) 2000-04-14 2000-04-14 Method and apparatus of growing a thin film onto a substrate
FI20000899A FI117978B (sv) 2000-04-14 2000-04-14 Förfarande och anordning för uppbyggnad av en tunnfilm på ett substrat
JP2001117413A JP2001348666A (ja) 2000-04-14 2001-04-16 基板上に薄膜を成長させる方法および装置
US09/836,674 US7105054B2 (en) 2000-04-14 2001-04-16 Method and apparatus of growing a thin film onto a substrate
US10/270,745 US7060132B2 (en) 2000-04-14 2002-10-11 Method and apparatus of growing a thin film

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FI20000899A FI117978B (sv) 2000-04-14 2000-04-14 Förfarande och anordning för uppbyggnad av en tunnfilm på ett substrat
FI20000899 2000-04-14

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FI20000899L FI20000899L (sv) 2001-10-15
FI117978B true FI117978B (sv) 2007-05-15

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FI20000899A0 (sv) 2000-04-14
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US7105054B2 (en) 2006-09-12
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