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ES385881A1 - Un dispositivo semiconductor. - Google Patents

Un dispositivo semiconductor.

Info

Publication number
ES385881A1
ES385881A1 ES385881A ES385881A ES385881A1 ES 385881 A1 ES385881 A1 ES 385881A1 ES 385881 A ES385881 A ES 385881A ES 385881 A ES385881 A ES 385881A ES 385881 A1 ES385881 A1 ES 385881A1
Authority
ES
Spain
Prior art keywords
base region
low
power transistor
microwave power
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES385881A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of ES385881A1 publication Critical patent/ES385881A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
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    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Bipolar Transistors (AREA)
  • Wire Bonding (AREA)
ES385881A 1970-02-20 1970-11-25 Un dispositivo semiconductor. Expired ES385881A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1302670A 1970-02-20 1970-02-20

Publications (1)

Publication Number Publication Date
ES385881A1 true ES385881A1 (es) 1973-11-16

Family

ID=21757931

Family Applications (2)

Application Number Title Priority Date Filing Date
ES385881A Expired ES385881A1 (es) 1970-02-20 1970-11-25 Un dispositivo semiconductor.
ES415194A Expired ES415194A1 (es) 1970-02-20 1973-05-25 Un dispositivo semiconductor.

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES415194A Expired ES415194A1 (es) 1970-02-20 1973-05-25 Un dispositivo semiconductor.

Country Status (9)

Country Link
US (1) US3585465A (es)
JP (1) JPS4813872B1 (es)
BE (1) BE759583A (es)
DE (1) DE2058063A1 (es)
ES (2) ES385881A1 (es)
FR (1) FR2080639B1 (es)
GB (1) GB1277863A (es)
NL (1) NL7018055A (es)
SE (1) SE369124B (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE840250C (de) * 1940-03-09 1952-05-29 Sabroe & Co As Thomas Ths Eiserzeugung
US3878550A (en) * 1972-10-27 1975-04-15 Raytheon Co Microwave power transistor
JPS5535069Y2 (es) * 1975-10-08 1980-08-19

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3368123A (en) * 1965-02-04 1968-02-06 Gen Motors Corp Semiconductor device having uniform current density on emitter periphery
US3287610A (en) * 1965-03-30 1966-11-22 Bendix Corp Compatible package and transistor for high frequency operation "compact"
DE1514008B2 (de) * 1965-04-22 1972-12-07 Deutsche Itt Industries Gmbh, 7800 Freiburg Flaechentransistor
US3336508A (en) * 1965-08-12 1967-08-15 Trw Semiconductors Inc Multicell transistor
GB1153497A (en) * 1966-07-25 1969-05-29 Associated Semiconductor Mft Improvements in and relating to Semiconductor Devices
GB1153893A (en) * 1966-07-29 1969-05-29 Texas Instruments Ltd High Frequency Transistor
FR1569872A (es) * 1968-04-10 1969-06-06

Also Published As

Publication number Publication date
GB1277863A (en) 1972-06-14
FR2080639A1 (es) 1971-11-19
SE369124B (es) 1974-08-05
BE759583A (fr) 1971-04-30
JPS4813872B1 (es) 1973-05-01
US3585465A (en) 1971-06-15
FR2080639B1 (es) 1976-04-16
ES415194A1 (es) 1976-02-01
NL7018055A (es) 1971-08-24
DE2058063A1 (de) 1971-09-02

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