ES343343A1 - Un dispositivo transistor. - Google Patents
Un dispositivo transistor.Info
- Publication number
- ES343343A1 ES343343A1 ES343343A ES343343A ES343343A1 ES 343343 A1 ES343343 A1 ES 343343A1 ES 343343 A ES343343 A ES 343343A ES 343343 A ES343343 A ES 343343A ES 343343 A1 ES343343 A1 ES 343343A1
- Authority
- ES
- Spain
- Prior art keywords
- transistor
- base
- region
- diffused
- emitter region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
- H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
- H10D10/058—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB33426/66A GB1153497A (en) | 1966-07-25 | 1966-07-25 | Improvements in and relating to Semiconductor Devices |
Publications (1)
Publication Number | Publication Date |
---|---|
ES343343A1 true ES343343A1 (es) | 1968-09-01 |
Family
ID=10352810
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES343343A Expired ES343343A1 (es) | 1966-07-25 | 1967-07-22 | Un dispositivo transistor. |
Country Status (9)
Country | Link |
---|---|
US (1) | US3500143A (es) |
AT (1) | AT278902B (es) |
BE (1) | BE701770A (es) |
CH (1) | CH469361A (es) |
DE (1) | DE1614264B2 (es) |
ES (1) | ES343343A1 (es) |
GB (1) | GB1153497A (es) |
NL (1) | NL6710041A (es) |
SE (1) | SE317450B (es) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3582725A (en) * | 1969-08-21 | 1971-06-01 | Nippon Electric Co | Semiconductor integrated circuit device and the method of manufacturing the same |
BE759583A (fr) * | 1970-02-20 | 1971-04-30 | Rca Corp | Transistor de puissance pour micro-ondes |
US3614553A (en) * | 1970-09-17 | 1971-10-19 | Rca Corp | Power transistors having controlled emitter impurity concentrations |
DE2215462C2 (de) * | 1971-04-28 | 1983-03-31 | Motorola, Inc., 60196 Schaumburg, Ill. | Transistor |
US3736478A (en) * | 1971-09-01 | 1973-05-29 | Rca Corp | Radio frequency transistor employing high and low-conductivity base grids |
US3896475A (en) * | 1972-01-28 | 1975-07-22 | Philips Corp | Semiconductor device comprising resistance region having portions lateral to conductors |
US3988759A (en) * | 1974-08-26 | 1976-10-26 | Rca Corporation | Thermally balanced PN junction |
US3962717A (en) * | 1974-10-29 | 1976-06-08 | Fairchild Camera And Instrument Corporation | Oxide isolated integrated injection logic with selective guard ring |
JPS5565460A (en) * | 1978-11-09 | 1980-05-16 | Ibm | Method of manufacturing semiconductor device improved in current gain |
JPS5818964A (ja) * | 1981-07-28 | 1983-02-03 | Fujitsu Ltd | 半導体装置 |
US5492844A (en) * | 1993-01-29 | 1996-02-20 | Sgs-Thomson Microelectronics, Inc. | Method of manufacturing increased conductivity base contact/feeders with self-aligned structures |
US6043130A (en) * | 1999-05-17 | 2000-03-28 | National Semiconductor Corporation | Process for forming bipolar transistor compatible with CMOS utilizing tilted ion implanted base |
US6262472B1 (en) | 1999-05-17 | 2001-07-17 | National Semiconductor Corporation | Bipolar transistor compatible with CMOS utilizing tilted ion implanted base |
JP6341362B2 (ja) * | 2013-12-24 | 2018-06-13 | セイコーエプソン株式会社 | 発熱体、振動デバイス、電子機器及び移動体 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1018673A (en) * | 1963-01-28 | 1966-01-26 | Rca Corp | Semiconductor devices |
US3358197A (en) * | 1963-05-22 | 1967-12-12 | Itt | Semiconductor device |
GB1074287A (en) * | 1963-12-13 | 1967-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
US3381183A (en) * | 1965-06-21 | 1968-04-30 | Rca Corp | High power multi-emitter transistor |
US3389023A (en) * | 1966-01-14 | 1968-06-18 | Ibm | Methods of making a narrow emitter transistor by masking and diffusion |
-
1966
- 1966-07-25 GB GB33426/66A patent/GB1153497A/en not_active Expired
-
1967
- 1967-07-20 NL NL6710041A patent/NL6710041A/xx unknown
- 1967-07-21 SE SE10762/67*A patent/SE317450B/xx unknown
- 1967-07-21 US US655218A patent/US3500143A/en not_active Expired - Lifetime
- 1967-07-21 AT AT679067A patent/AT278902B/de not_active IP Right Cessation
- 1967-07-21 DE DE1967N0030940 patent/DE1614264B2/de active Granted
- 1967-07-22 ES ES343343A patent/ES343343A1/es not_active Expired
- 1967-07-24 BE BE701770D patent/BE701770A/xx unknown
- 1967-07-24 CH CH1044467A patent/CH469361A/de unknown
Also Published As
Publication number | Publication date |
---|---|
NL6710041A (es) | 1968-01-26 |
BE701770A (es) | 1968-01-24 |
CH469361A (de) | 1969-02-28 |
SE317450B (es) | 1969-11-17 |
GB1153497A (en) | 1969-05-29 |
AT278902B (de) | 1970-02-25 |
DE1614264B2 (de) | 1976-07-22 |
US3500143A (en) | 1970-03-10 |
DE1614264A1 (de) | 1970-05-27 |
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