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BE759583A - Transistor de puissance pour micro-ondes - Google Patents

Transistor de puissance pour micro-ondes

Info

Publication number
BE759583A
BE759583A BE759583DA BE759583A BE 759583 A BE759583 A BE 759583A BE 759583D A BE759583D A BE 759583DA BE 759583 A BE759583 A BE 759583A
Authority
BE
Belgium
Prior art keywords
microwave
power transistor
transistor
power
Prior art date
Application number
Other languages
English (en)
Inventor
W P Imhauser
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE759583A publication Critical patent/BE759583A/fr

Links

Classifications

    • H—ELECTRICITY
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
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    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Bipolar Transistors (AREA)
  • Wire Bonding (AREA)
BE759583D 1970-02-20 Transistor de puissance pour micro-ondes BE759583A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1302670A 1970-02-20 1970-02-20

Publications (1)

Publication Number Publication Date
BE759583A true BE759583A (fr) 1971-04-30

Family

ID=21757931

Family Applications (1)

Application Number Title Priority Date Filing Date
BE759583D BE759583A (fr) 1970-02-20 Transistor de puissance pour micro-ondes

Country Status (9)

Country Link
US (1) US3585465A (fr)
JP (1) JPS4813872B1 (fr)
BE (1) BE759583A (fr)
DE (1) DE2058063A1 (fr)
ES (2) ES385881A1 (fr)
FR (1) FR2080639B1 (fr)
GB (1) GB1277863A (fr)
NL (1) NL7018055A (fr)
SE (1) SE369124B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE840250C (de) * 1940-03-09 1952-05-29 Sabroe & Co As Thomas Ths Eiserzeugung
US3878550A (en) * 1972-10-27 1975-04-15 Raytheon Co Microwave power transistor
JPS5535069Y2 (fr) * 1975-10-08 1980-08-19

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3368123A (en) * 1965-02-04 1968-02-06 Gen Motors Corp Semiconductor device having uniform current density on emitter periphery
US3287610A (en) * 1965-03-30 1966-11-22 Bendix Corp Compatible package and transistor for high frequency operation "compact"
DE1514008B2 (de) * 1965-04-22 1972-12-07 Deutsche Itt Industries Gmbh, 7800 Freiburg Flaechentransistor
US3336508A (en) * 1965-08-12 1967-08-15 Trw Semiconductors Inc Multicell transistor
GB1153497A (en) * 1966-07-25 1969-05-29 Associated Semiconductor Mft Improvements in and relating to Semiconductor Devices
GB1153893A (en) * 1966-07-29 1969-05-29 Texas Instruments Ltd High Frequency Transistor
FR1569872A (fr) * 1968-04-10 1969-06-06

Also Published As

Publication number Publication date
GB1277863A (en) 1972-06-14
FR2080639A1 (fr) 1971-11-19
SE369124B (fr) 1974-08-05
JPS4813872B1 (fr) 1973-05-01
ES385881A1 (es) 1973-11-16
US3585465A (en) 1971-06-15
FR2080639B1 (fr) 1976-04-16
ES415194A1 (es) 1976-02-01
NL7018055A (fr) 1971-08-24
DE2058063A1 (de) 1971-09-02

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