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ES368826A1 - Un dispositivo semiconductor. - Google Patents

Un dispositivo semiconductor.

Info

Publication number
ES368826A1
ES368826A1 ES368826A ES368826A ES368826A1 ES 368826 A1 ES368826 A1 ES 368826A1 ES 368826 A ES368826 A ES 368826A ES 368826 A ES368826 A ES 368826A ES 368826 A1 ES368826 A1 ES 368826A1
Authority
ES
Spain
Prior art keywords
region
transistor
base
collector
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES368826A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES368826A1 publication Critical patent/ES368826A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137Collector regions of BJTs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/037Diffusion-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
ES368826A 1968-06-27 1969-06-26 Un dispositivo semiconductor. Expired ES368826A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR156891 1968-06-27

Publications (1)

Publication Number Publication Date
ES368826A1 true ES368826A1 (es) 1971-05-16

Family

ID=8651745

Family Applications (1)

Application Number Title Priority Date Filing Date
ES368826A Expired ES368826A1 (es) 1968-06-27 1969-06-26 Un dispositivo semiconductor.

Country Status (8)

Country Link
US (1) US3602779A (es)
AT (1) AT315917B (es)
BE (1) BE735143A (es)
CH (1) CH493942A (es)
ES (1) ES368826A1 (es)
FR (1) FR1583247A (es)
NL (1) NL6909117A (es)
SE (1) SE359687B (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3946425A (en) * 1969-03-12 1976-03-23 Hitachi, Ltd. Multi-emitter transistor having heavily doped N+ regions surrounding base region of transistors
US3728592A (en) * 1969-05-09 1973-04-17 Ibm Semiconductor structure having reduced carrier lifetime
US3838440A (en) * 1972-10-06 1974-09-24 Fairchild Camera Instr Co A monolithic mos/bipolar integrated circuit structure
DE3841777C2 (de) * 1988-12-12 1994-06-23 Telefunken Microelectron Halbleiteranordnung mit vertikalem npn-Planartransistor

Also Published As

Publication number Publication date
FR1583247A (es) 1969-10-24
DE1933805B2 (de) 1976-09-30
NL6909117A (es) 1969-12-30
DE1933805A1 (de) 1970-02-05
BE735143A (es) 1969-12-29
SE359687B (es) 1973-09-03
CH493942A (de) 1970-07-15
AT315917B (de) 1974-06-25
US3602779A (en) 1971-08-31

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