Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
  • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
  • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
  • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
  • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/01—Manufacture or treatment
  • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
  • H10H20/018—Bonding of wafers

Definitions

• the present invention relates to the field of semiconductor technologies. It finds a particularly advantageous application in the manufacture of optoelectronic devices having a three-dimensional structure, for example light-emitting diodes.
• the microelectronic or optoelectronic devices can be produced on a first substrate, called donor substrate, then transferred onto a second substrate, called receiver substrate.
• the step of transferring the devices from the donor substrate to the recipient substrate is typically done via a manipulation substrate.
• the devices are first glued at their vertices to the manipulation substrate.
• the donor substrate is then removed, usually by mechanical trimming. This clears the bases of the devices.
• the devices are then transferred to the receiver substrate and assembled thereon at their bases.
• the bases of the devices initially in contact with the donor substrate are thus, at the end of the transfer, in contact with the receiver substrate.
• the handling substrate is removed so as to expose the tops of the devices.
• This manipulation substrate is preferably kept in order to be reused, typically for another transfer.
• the bonding between the handling substrate and the tops of the devices must therefore have a sufficiently high adhesion strength to withstand the mechanical trimming step.
• the bonding between the handling substrate and the tops of the devices must have a sufficiently low adhesion force to remove the handling substrate and disengage the tops of the devices, after transfer onto the receiving substrate.
• One solution consists in using an adhesive whose adhesion properties vary according to an external parameter, typically the temperature.
• an adhesive whose adhesion properties vary according to an external parameter, typically the temperature.
• this solution is not suitable for transferring temperature-sensitive devices.
• the amplitude of variation of the adhesion force of such an adhesive is also not sufficient to ensure both good stability of the devices when removing the donor substrate, and easy take-off when removing the substrate from the donor substrate. handling.
• Another solution consists in forming a stabilization layer and a sacrificial structure partially enveloping the device, during manufacture of the device, as disclosed by document US 9379092 B2.
• the donor substrate is removed by trimming.
• the sacrificial structure and the stabilization layer make it possible to maintain and stabilize the device during trimming.
• the etching of the sacrificial structure then makes it possible to partially release the device.
• the device is only retained by a small stud.
• the device is then assembled on a receiver substrate and the stabilization layer removed from the handling substrate.
• the present invention aims to at least partially overcome the drawbacks mentioned above.
• an object of the present invention is to propose a method for transferring an optoelectronic device improving the management of the transfer steps.
• Another object of the present invention is to provide a method for transferring an optoelectronic device whose cost is reduced.
• a first aspect of the invention relates to a method for transferring an optoelectronic device from a first substrate to a second substrate via a handling substrate.
• the method comprises at least the following steps:
• the assembly layer is formed beforehand on the handling substrate and only on the handling substrate, before bonding the device.
• the narrow portion can here be formed a posteriori, after bonding and after removal of the first substrate. This improves the management of transfer steps. It is no longer necessary to plan a narrow portion a priori.
• this stud is integrated into the assembly layer before the device is bonded thereto.
• the manufacture of the pad is done independently of the manufacture of the device, unlike the solution disclosed by document US 9379092 B2. This also improves the management of the transfer steps, which can be independent of the device manufacturing steps.
• the handling substrate comprising the assembly layer and/or the pads can advantageously be reused, for example to perform another transfer of optoelectronic devices.
• the device is bonded to the assembly layer at the level of the first face, which typically corresponds to a top of the device, and preferably only at the level of this first face.
• the transfer process is further simplified and the related costs are further reduced.
• FIGURE 1 illustrates an assembly step between a donor substrate bearing devices and a manipulation substrate, according to an embodiment of the present invention.
• FIGURE 2 illustrates devices assembled to the manipulation substrate, after removal of the donor substrate, according to one embodiment of the present invention.
• FIGURE 3A illustrates a step for separating the devices from each other, according to an embodiment of the present invention.
• FIGURE 3B illustrates a variant of the step of separating the devices from each other, illustrated in FIGURE 3A.
• FIGURE 4 illustrates the formation of narrow portions in the assembly layer with a view to detaching the devices from the manipulation substrate, according to an embodiment of the present invention.
• FIGURE 5 illustrates a step for detaching the devices from the manipulation substrate, and their transfer to a receiving substrate, according to an embodiment of the present invention.
• FIGURES 6-9 illustrate steps of a method of transferring devices according to another embodiment of the present invention.
• FIGURES 10-12A illustrate steps of a method of transferring devices according to another embodiment of the present invention.
• FIGURES 11B through 12B illustrate variations of the steps illustrated in FIGURES 11A and 12A, respectively.
• the bonding surface extends only along the xy base plane.
• the assembly layer comprises at least one layer of glue.
• the detachment of the optoelectronic device comprises:
• the first face of the device is only in contact with the adhesive layer. This makes it possible to standardize the adhesion force between the device and the handling substrate.
• the partial etching of the assembly layer comprises:
• an anisotropic etching mainly directed along a z direction normal to the xy base plane and configured to remove the assembly layer around the device, in projection along a z direction normal to the xy base plane, so as to outline the device, Then
• an isotropic etching configured to form the narrow portion under the device, in projection along a direction z normal to the base plane xy.
• the anisotropic etching is carried out by cutting.
• the cutting is done by laser.
• the cutting is done by a saw.
• the cutting is done by plasma.
• the anisotropic and isotropic etchings are performed by plasma.
• the isotropic etching corresponds to an overetching performed at the end of the anisotropic etching.
• the isotropic etching corresponds to an overetching step obtained by exceeding a predetermined duration threshold for the anisotropic etching, and by continuing the anisotropic etching over an overetching duration beyond said predetermined duration threshold. This makes it possible to obtain a plot with the desired section. In particular, partial etching is stopped by controlling the overetching duration.
• the anisotropic etching is configured to remove the assembly layer over an entire thickness of the assembly layer.
• the assembly layer comprises a composite layer on the handling substrate, said composite layer comprising at least one pad having an outer wall based on a first material A, and a matrix based on a second material B.
• the assembly layer comprises a layer of glue based on a C glue on the composite layer, facing the device.
• the method further comprises the formation of a layer of glue on the composite layer or on the entire first face of the device, prior to the bonding of the device, so that said layer of glue (303) is interposed between the composite layer and the first face of the device, after bonding.
• the at least one stud comprises a shell having the outer wall based on the first material A, and a core made of a material A' different from the first material A.
• the partial etching is configured to etch the second material B selectively to the first material A.
• the partial etching has an etching selectivity SB A of the second material B with respect to the first material A greater than 5:1.
• the at least one narrow portion retained after the partial etching is the at least one pad of the composite layer.
• the method further comprises, before partial etching, the formation of a hard mask based on the second material B on the second face of the device.
• the partial etching is configured to etch the second material B selectively with the glue C.
• the partial etching has an etching selectivity SB C of the second material B with respect to the glue C greater than 2:1, or even greater than 5:1.
• the first material A is a silicon oxide and the second material B is chosen from copper, a polymer, amorphous silicon or polycrystalline silicon.
• the second material B is amorphous silicon or polycrystalline silicon and the partial etching is performed by plasma based on xenon fluoride XeF2.
• the at least one stud is centered with respect to the first face of the device, in projection along a direction z normal to the base plane xy.
• the at least one pad has a height strictly less than a thickness of the assembly layer.
• the at least one stud has a height equal to a thickness of the composite layer.
• the assembly layer comprises only a layer of glue based on a glue C.
• the partial etching is configured to isotropically etch the glue C, so that the at least one narrow portion retained after the partial etching is approximately centered with respect to the first face of the device, in projection along a direction z normal to the base plane xy.
• the glue C is based on polyimide.
• the partial etching is a wet etching based on a solution of oxalic acid and amine.
• the transfer method is in particular dedicated to the transfer of light-emitting diodes (LEDs) from a donor substrate onto a receiver substrate.
• LEDs light-emitting diodes
• the invention can be implemented more widely for various optoelectronic or microelectronic devices with 3D architecture.
• the invention can therefore also be implemented in the context of laser or photovoltaic devices, or even in the context of microelectronic devices comprising stacks of structures transferred on top of each other.
• the relative arrangement of a third layer interposed between a first layer and a second layer does not necessarily mean that the layers are directly in contact with each other. , but means that the third layer is either directly in contact with the first and second layers, or separated from them by at least one other layer or at least one other element.
• the steps of the method as claimed are understood in the broad sense and may optionally be carried out in several sub-steps.
• “Narrow portion” means an exposed portion of the assembly layer, after partial etching. This portion is physically bounded, at least in the xy plane. It is not conceptually or intellectually defined within the assembly layer.
• bonding surface means the effective contact surface between the first face of the device and the assembly layer.
• bond force or “adhesion” is meant the force necessary to separate the device(s) from the manipulation substrate, after assembly. Bond strength can be quantified by centrifugal testing technology known as CATT.
• CATT centrifugal testing technology
• a-M refers to material M in amorphous form, according to the terminology usually used in the field of microelectronics for the prefix a-
• p-M refers to material M in polycrystalline form , according to the terminology usually used in the field of microelectronics for the prefix p-.
• a substrate, a layer, a device, "based" on a material M is understood to mean a substrate, a layer, a device comprising this material M only or this material M and possibly other materials, for example elements alloy, impurities or doping elements.
• a reference frame preferably orthonormal, comprising the axes x, y, z is shown in certain appended figures. This mark is applicable by extension to the other appended figures.
• a layer typically has a thickness along z
• an LED has a height along z.
• the relative terms “under”, “underlying” refer to positions taken in the direction z.
• the dimensional values are understood to within manufacturing and measurement tolerances.
• a direction substantially normal to a plane means a direction having an angle of 90 ⁇ 10° relative to the plane.
• SEM scanning electron microscopy
• TEM transmission electron microscopy
• a cross-sectional observation of the assembly layer can determine whether this assembly layer comprises a composite layer and/or a narrow attachment pad.
• a general principle of the invention consists in transferring for the first time at least one and preferably devices onto an assembly layer of a handling substrate, then in partially etching this assembly layer so as to retain a narrow portion of this assembly layer between each of the devices and the manipulation substrate.
• the devices can then be transferred a second time, typically onto a receiving substrate.
• the narrow portion decreases the adhesion force between the manipulation substrate and the devices, and facilitates the separation and transfer of the devices.
• a substrate 1 carrying devices 10 is provided. These devices are typically optoelectronic devices in the form of mesas. They have a characteristic dimension L-io along x typically between a few hundred nanometers, for example 500 nm, and a few tens of microns, for example 30 ⁇ m, 50 ⁇ m or even 100 ⁇ m. They can have a height along z of the order of a few hundred nanometers, for example 500 nm, to a few microns, for example 5 ⁇ m, 10 ⁇ m, or even 20 ⁇ m.
• the devices 10 can comprise or be based on three-dimensional (3D) architecture LEDs, and in particular nanowires.
• the devices 10 are preferably separated from each other by a distance dio of the order of a few microns, for example between 1 ⁇ m and 100 ⁇ m.
• the devices 10 can be partially encapsulated by an encapsulation layer 11.
• This encapsulation layer 11 is typically configured to surround and separate the devices 10 from each other, in projection in the xy plane. It improves the mechanical strength of the devices on the substrate 1.
• This encapsulation layer 11 preferably comes flush with the exposed faces 101 of the devices 10, without covering them.
• the faces 101 of the devices 10 are intended to come into contact with an assembly layer 30 of a handling substrate 3. These faces 101 do not necessarily extend over the entire characteristic dimension L-io of the devices 10. They can form at least one step having for example a height of between 5 and 15 ⁇ m. In this case, the step can be embedded or absorbed in a layer of glue 303. Face 101 can be by extension the glued face of device 10.
• the glue layer 303 is typically based on a glue C such as polyimide, for example Kapton®, for example a polyimide glue HD-3007 (DuPont®). It can be formed on the face 101 of the devices 10 or on the composite layer 300, prior to bonding. Thus, assembly layer 30 may comprise composite layer 300 and all or part of adhesive layer 303.
• Adhesive layer 303 has a thickness of between a few hundred nanometers, for example 200 nm, and a few microns, for example. example 15 ⁇ m, 20 ⁇ m, or even 50 ⁇ m.
• the assembly layer 30 typically has a flat free face 3101, extending along an xy plane.
• the bonding surface can be defined as being the contact surface between the face 101 of the device and the free face 3101 of the assembly layer 30. According to one possibility, the bonding surface corresponds to the surface glued on the face 101 of the device.
• the assembly layer 30 preferably comprises the glue layer 303 and a composite layer 300 formed of pads 301 and a matrix 302. According to this embodiment, the narrow portion retained under each device 10 after the partial etching of the assembly layer is a pad 301 .
• the composite layer 300 is preferably directly in contact with the handling substrate 3. It has a thickness that is preferably constant and between a few hundred nanometers, for example 200 nm, and a few microns, for example 10 ⁇ m.
• the pads 301 are typically based on a first material A, for example silicon oxide. Alternatively, they have a shell based on this first material A.
• the pads 301 can comprise a silicon core surrounded by a shell based on silicon oxide.
• the studs 301 have a height preferably equal to the thickness of the composite layer 300.
• the pads 301 have a dimension, for example a length L301 along x, of between a few tens of nanometers, for example 100 nm, and a few microns, for example 10 p.m.
• the length of pads 301 is chosen such that L301 ⁇ L10.
• the distribution of the pads 301 in the composite layer 300 can be such that there are no pads 301 opposite the encapsulation layer 11, during the positioning of the donor substrate 1 vis-à-vis the substrate of handling 3.
• a single stud 301 is positioned opposite each device 10. According to one possibility, a plurality of studs of shorter lengths can be substituted for each unit stud 301 illustrated. Thus, instead of having a single stud 301 intended to support a device 10, at least two, three or four smaller studs can be provided. In this example, the pad(s) are intended to form feet supporting the device 10 after partial etching of the assembly layer 30. In general, the pads 301 are configured so that the total surface, in the plane xy, of the studs supporting a device 10 is less than the bonding surface of the device 10.
• studs 301 of section S301 supporting the same device 10 uniformly glued at the level of its face 101 of surface S101 we have X.S301 ⁇ S101.
• the studs 301 preferably have a constant section along the z axis. According to another possibility, this section varies along z. In this case, it is the total surface of the minimum sections of the studs which is chosen to be less than the bonding surface.
• L301 ⁇ dio and L301 ⁇ dsoi for example L301 ⁇ 10.dio and/or L301 ⁇ 1 O.dsoi
• the devices 10 will always rest on one or a few studs 301.
• two devices 10 will not be glued to the same stud 301. This makes it possible to envisage an individualized transfer of each device 10.
• the matrix 302 is typically based on a second material B different from the first material A, for example copper, polymethyl methacrylate (PMMA), polyimide, polycrystalline silicon (p-Si). Matrix 302 extends between pads 301.
• a second material B for example copper, polymethyl methacrylate (PMMA), polyimide, polycrystalline silicon (p-Si).
• Matrix 302 extends between pads 301.
• the donor substrate 1 and the handling substrate 3 are assembled (FIG. 2).
• the devices 10 are then bonded at their face 101 to the adhesive layer 303.
• the donor substrate 1 can then be removed, typically by mechanical trimming and/or chemical-mechanical polishing.
• a face 102 of each device 10, opposite the face 101, is preferably exposed after removal of the donor substrate 1.
• assembly layer 30 is solid and has no cavities. It thus ensures excellent retention of the devices 10 during the removal of the donor substrate 1.
• the encapsulation layer 11 also contributes to the lateral retention of the devices during the removal of the donor substrate 1 .
• the force of adhesion of the devices 10 and/or of the encapsulation layer 11 on the manipulation substrate 3 is optimal for the step of removing the donor substrate 1 .
• the following steps aim to reduce this adhesion force between the devices 10 and the handling substrate 3, with a view to separating the devices 10 from the handling substrate 3, for a transfer of the devices 10 onto a receiving substrate.
• the devices 10 are separated from each other by an etching of the encapsulation layer 11.
• This z-directed anisotropic etching is configured to remove the assembly layer portions 30 located between the devices 10, in projection in the xy plane.
• the anisotropic etching is stopped on the manipulation substrate 3, at the level of a face 3001 .
• Each device 10 thus forms a stack along z with a portion 304 of adhesive layer, and a portion 305 of composite layer.
• Each portion 305 comprises at least one pad 301 and at least one portion 306 of matrix.
• the anisotropic etching here makes it possible to expose the sides 3041 of the portions 304 and the sides 3061 of the portions 306.
• the portions 306 are etched from the sides 3061, by selective isotropic etching, so as to retain only the studs 301 , as illustrated in FIG. 4.
• This selective isotropic etching can typically be dry etching, for example by plasma based on xenon fluoride XeF2 if the portions 306 to be etched are based on Si or polySi.
• this selective isotropic etching can typically be wet etching, for example based on a FotoPur® (BASF®) solution if the 306 portions to be etched are based on HD3007 adhesive.
• only the adhesive layer portions located between the devices 10 are removed by anisotropic etching.
• the anisotropic etching is stopped here on the matrix 302 of the composite layer 300.
• the matrix 302 is etched from the exposed faces 3021 , by selective etching, so as to retain only the studs 301 , as illustrated in FIG. 4.
• an essentially anisotropic selective etching followed by an overetching can be implemented to reach the pads 301 .
• an essentially isotropic selective etching can be implemented to reach the pads 301 .
• the selective anisotropic etching can typically be dry etching.
• the etching of the matrix 302 is configured to keep the pads 301, and at least partially the portions 304.
• the etching of the matrix 302 is a selective etching of the second material B vis-à-vis the first material A. It has for example an etching selectivity SB A greater than 5:1.
• the etching of the matrix 302 is also a selective etching of the second material B with respect to the glue C. It has for example an etching selectivity SB C greater than 2:1 or even 5:1.
• the engraving of the matrix 302 is also a selective etching of the second material B with respect to the material(s) of the device 10. This makes it possible to preserve the device 10 during said etching.
• the device 10 is secured to the handling substrate 3 via its face 101 with surface S101 in contact with the portion 304, and via the pad 301 with section S301, with S301 ⁇ S101.
• the adhesion force between the manipulation substrate 3 and the device 10 is here reduced compared to the situations illustrated in the preceding FIGS. 3A and 3B. This is due to the reduction in section in the assembly layer 30 underlying the device 10. The subsequent separation of the device(s) 10 from the handling substrate 3 is thus facilitated.
• FIG. 5 illustrates the transfer of the devices 10 onto a receiver substrate 2, at their faces 102, and the subsequent separation of these devices 10 from the handling substrate 3, by traction along z.
• the rupture under tension occurs at the level of the studs 301, of reduced section S301.
• the receiver substrate 2 can be, for example, made of PCB, glass, square glass plates, etc. and the handling substrate 3 can be of the printing pad type, for example as implemented in nano- impression.
• a layer 500 of hard mask is deposited on the faces 102 of the devices 10 and/or on the encapsulation layer 11 (FIG. 7).
• one or more anisotropic etchings directed along z make it possible to etch portions of the layer 500 surmounting the encapsulation layer 11, then the encapsulation layer 11 then portions of the adhesive layer under the layer encapsulation 11.
• This makes it possible to initially form a hard mask 50 on the face 102 of the devices 10. This hard mask 50 then makes it possible to protect this face 102 during the etching of the encapsulation layer 11, and when etching the glue layer.
• the layer 500 and, consequently, the hard mask 50 are based on the same material B as the matrix 302.
• the hard mask 50 can thus be eliminated at the same time as the matrix 302, during the selective etching of material B with respect to materials A and/or C.
• dry plasma etching based on XeF2 xenon fluoride can be used.
• the adhesion force is reduced and the devices 10 can be more easily separated from the handling substrate 3.
• the assembly layer 40 only comprises an adhesive layer 403.
• the narrow portion retained under each device 10 after the partial etching of assembly layer 40 is a glue pad 401 .
• the donor substrate 1 carrying the devices 10 is placed facing the manipulation substrate 3 carrying the assembly layer 40, ie the glue layer 403.
• the faces 101 of the devices 10 are intended to be glued on the free face 4101 of the layer of glue 403.
• the adhesive layer 403 is preferably directly in contact with the manipulation substrate 3. It has a thickness that is preferably constant and between a few hundred nanometers, for example 200 nm, and a few microns, for example 10 ⁇ m or even 50 ⁇ m.
• the adhesive layer 403 is typically based on an adhesive C such as polyimide, for example Kapton®. After assembly of the devices 10, it makes it possible to maintain the devices during the removal of the donor substrate 1 .
• the assembly layer 40 or the adhesive layer 403 are formed or deposited on the devices 10 and on the encapsulation portions 11.
• the substrate handle 3 does not include assembly layer 40, 403 in this embodiment.
• the assembly layer 40, 403 is formed partly on the devices 10 and on the portions of encapsulation 11, and partly on the manipulation substrate 3.
• the adhesive layer 403 is deposited on the two facing faces before assembly.
• the devices 10 can be separated from each other by etching the encapsulation layer 11 .
• This z-directed anisotropic etching can be configured to remove the encapsulation layer 11 between the devices 10.
• the anisotropic etching is stopped on the face 4101 of the glue layer 403.
• the layer of glue 403 is then partially etched from the exposed faces 4101, so as to form spots of glue 401, as illustrated in FIG. 12A.
• Essentially anisotropic etching followed by overetching can be implemented to form the glue dots 401 .
• an essentially isotropic etching can be implemented to form the glue spots 401 .
• the control of the section of the pads, in the xy plane, can typically be done by adjusting the duration of the etching and/or the overetching.
• the anisotropic etching directed along z can be configured to remove the encapsulation layer 11 between the devices 10, as well as the portions of adhesive layer 403 located between the devices 10, projecting into the xy-plane.
• the anisotropic etching is stopped on the manipulation substrate 3, at the level of a face 3001 .
• Each device 10 thus forms a stack along z with a portion 404 of glue layer.
• the anisotropic etching here makes it possible to expose the flanks 4041 of the portions 404.
• the portions 404 are partially etched from the flanks 4041, by isotropic etching, so as to form the glue pads 401, as illustrated in the figure 12B.
• the partial etching of the glue layer 403 can be carried out by wet etching based on a solution of FotoPur® (BASF®), or else based on a solution of oxalic acid and amine. Other etching solutions known to those skilled in the art are also possible.
• the glue pads 401 are formed and each device 10 is integral with the handling substrate 3 by means of a glue pad 401 .
• Each glue pad 401 has a section S401, in the xy plane, typically variable along z.
• the partial etching is configured so that the minimum section S401 of the glue pad 401 is less than the surface S101 of the face 101 of the device 10.
• This minimum section S401 can be located at different heights along z of the glue pad 401 .
• the minimum section S401 can for example be located at the top of the glue pad 401, in the immediate vicinity of the face 101, as illustrated in FIG. 12A.
• the minimum section S401 can be located at a median height of the glue pad 401, as illustrated in FIG. 12B.
• the minimum section S401 can be located at the bottom of the glue pad 401, in the immediate vicinity of the face 3001 of the handling substrate 3 (not shown).
• the adhesion force between the manipulation substrate 3 and the device 10 is here reduced compared to the situations illustrated in the preceding FIGS. 11A and 11B. The subsequent separation of the device(s) 10 from the handling substrate 3 is thus facilitated.
• the transfer of the devices 10 onto a receiver substrate 2, at their faces 102, and the subsequent separation of these devices 10 from the manipulation substrate 3, can be carried out as above.
• the rupture under traction occurs here at the level of the studs 401, of reduced section S401.
• the faces 102 and/or 101 of the devices are preferably cleaned after separation and before transfer to the receiver substrate 2, for example by plasma or in solution.
• the invention is not limited to the embodiments described above and extends to all the embodiments covered by the claims.

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• 2021
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