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EP3236530B1 - Filtre de guide d'ondes intégré à un substrat - Google Patents

Filtre de guide d'ondes intégré à un substrat Download PDF

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Publication number
EP3236530B1
EP3236530B1 EP17166052.5A EP17166052A EP3236530B1 EP 3236530 B1 EP3236530 B1 EP 3236530B1 EP 17166052 A EP17166052 A EP 17166052A EP 3236530 B1 EP3236530 B1 EP 3236530B1
Authority
EP
European Patent Office
Prior art keywords
filter
substrate
vias
cover
siw
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP17166052.5A
Other languages
German (de)
English (en)
Other versions
EP3236530A1 (fr
Inventor
Axel Brokmeier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hensoldt Sensors GmbH
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Hensoldt Sensors GmbH
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Filing date
Publication date
Application filed by Hensoldt Sensors GmbH filed Critical Hensoldt Sensors GmbH
Publication of EP3236530A1 publication Critical patent/EP3236530A1/fr
Application granted granted Critical
Publication of EP3236530B1 publication Critical patent/EP3236530B1/fr
Not-in-force legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/207—Hollow waveguide filters
    • H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
    • H01P1/2088—Integrated in a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/12—Hollow waveguides
    • H01P3/121—Hollow waveguides integrated in a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/12—Hollow waveguides
    • H01P3/123—Hollow waveguides with a complex or stepped cross-section, e.g. ridged or grooved waveguides

Definitions

  • the invention relates to a substrate-integrated waveguide filter (English: Substrate Integrated Waveguide (SIW) filter) for use in microwave technology.
  • SIW Substrate Integrated Waveguide
  • SMT surface mount technology
  • PCBs means (eg SMD processors, resistors and circuits).
  • SIW filters are derived from the basic form of a waveguide. Waveguides as a form of waveguide, such as these are used in particular in radar technology or telecommunications, are increasingly being implemented as a substrate-integrated waveguide (hereinafter "SIW").
  • SIW substrate-integrated waveguide
  • the waveguide is bounded with waveguide walls of conductive material, for example, an upper and a lower waveguide wall are each part of a metallization applied above or below the platinum substrate.
  • the height of the waveguide is limited to the height of the substrate.
  • Lateral waveguide walls are formed, for example, by means of plated-through holes, so-called vias or else by internally metallized trenches, so-called grooves, or by a metallization of the outside, provided that the waveguide space coincides with the edge of the board.
  • the board is designed as a multi-layer board (e.g., tri-plate) and thereby comprises a plurality of substrate layers each of a dielectric material, between each of which a layer of an electrically conductive material, such as copper, is disposed.
  • a stack is formed, wherein the substrate layers can be made of different materials.
  • At least one substrate layer of RF substrate is provided.
  • Additional substrate layers may be conventional platinum substrates, in particular fiber-reinforced epoxy resin.
  • EP 2 858 170 A1 discloses a bandpass filter comprising a dielectric substrate having conductive layers on the surfaces of the substrate, the substrate having a plurality of through holes presenting electrical contact between the opposing conductive layers.
  • the SIW filter according to the invention comprises: a substrate-integrated waveguide which forms from a substrate which has a metallic coating, eg a copper layer, on its two flat sides, as well as metallic delimiting structures at its lateral edges, eg in the form of vias or grooves / Put.
  • a metallic coating eg a copper layer
  • metallic delimiting structures at its lateral edges, eg in the form of vias or grooves / Put.
  • several groups of plated-through holes are arranged between the metallic coatings of the two flat sides.
  • the metallic coating of one of the two flat sides is structured in such a way that it has several regions insulated from the coating surrounding it, ie the metallic coating has isolated regions in the form of individual metallic islands (hereinafter "island regions") the rest of the coating on this flat side no have electrical connection.
  • These individual isolated regions are associated with the individual groups of vias such that a single region is electrically connected to all vias of the associated group.
  • all vias of a group are connected to exactly one island region and thus connected to one another via the island region, but there is no electrical connection to the remaining metallic coating on this flat side of the substrate.
  • the SIW filter according to the invention has a bandpass characteristic, wherein the filter characteristic is created only by adding a metallic, conductive cover. Without this cover, however, the component has a high transmission. It is thus possible to operate the filter according to the invention in two states and to switch between them in a simple manner.
  • FIG. 1 shows the two main modules, the main body 10 of the SIW filter 1 and the lid 20th
  • the main body 10 of the SIW filter 1 comprises a substrate-integrated waveguide.
  • the SIW includes a substrate 40 (see Fig. 4 ), which has on its two flat sides a metallic coating 11, 13, and metallic boundary structures 12 at its lateral edges.
  • Such a SIW could, for example, be constructed from the substrate material RO3003 from Rogers Corporation, which comprises an HF substrate with a copper coating its flat sides, wherein the lateral boundary is achieved by vias or by an additional metallization on the side.
  • the metallic coating 11 on one of the flat sides of the substrate has a structuring as in FIG Fig. 1 shown on.
  • the structuring is designed such that a plurality of isolated regions 11a are formed, wherein the isolated regions 11a provide electrical separation from the surrounding metallization 11b (see FIG Fig. 2 ) on the common flat side.
  • the isolated areas 11a may be understood as a kind of island, which are separated from the remaining areas of the metallic coating on this flat side.
  • the isolated portions 11a are formed in the illustrated embodiment in the form of rectangles having rounded corners. Depending on the field of application and purpose, the shape, number and size of these island areas may differ from the example shown and will be made by the person skilled in the art in accordance with the purpose of the invention.
  • the fabrication of the isolated areas 11a on the flat side of the board may e.g. by an etching process for producing the structures on the board or by printing these structures on the substrate.
  • a plurality of spatially separated groups of plated-through holes 50 are provided to obtain the filter characteristic (see FIG Fig. 4 and 5 ) between the metallic coatings 11, 13 of the two flat sides.
  • a Ka-band E-Plane filter was designed using conventional design techniques for a RWG28 waveguide and modified into a SIW filter 1.
  • the individual groups of vias 50 are each connected to one of the isolated regions 11a.
  • the isolated regions 11a thus virtually form a covering of the vias 50, so that they are in the Fig. 1 are not recognizable. Relative differences in the lengths of the isolated regions 11a correspond to a different number of the underlying vias 50.
  • the isolated regions 11a on the vias 50 form capacitive structures, which result in the desired filter behavior when the cover 20 is placed on and without the cover 20 the behavior of the main body 10 allow as transmission line.
  • Fig. 2 shows as a section A of Fig.1 a single isolated region 11a of the metallic coating 11.
  • the isolated region 11a is separated from the metallic coating 11b surrounding it by a peripheral insulation 60 on which no metallic coating is present, electrically isolated.
  • the substrate 40 present under the metallization 11 is exposed.
  • the vias 50 are indicated on the isolated region 11a. With vias, several traces of a printed circuit board can be electrically interconnected.
  • the vias 50 form within the SIW several spatially separated groups between the metallic coatings 11 and 13 of the two flat sides. Each group is connected to one of the isolated areas 11a. In the present case, the vias 50 thus connect the insulated region 11a with the metallic coating 13 on the other flat side of the substrate 40, the vias 50 being connected to one another via the insulated region 11a.
  • the vias 50 can be embodied as internally metallized bores or as bores completely filled with conductive material, and this also applies to the lateral boundary structures of the SIW, provided they are designed with vias.
  • Fig. 3 shows the SIW filter 1 in a state in which a filter function is achieved (with a characteristic according to FIG Fig. 6 ).
  • the cover 20 is placed on the base body 10, on its structured metallic coating 11, whereby an electrical connection between the isolated areas 11a and the surrounding metallization 11b is produced.
  • the lid 20 is removed, the characteristic of the structure changes. He now shows a transmission behavior over a wide frequency range. An example of this is in the Fig. 7 shown.
  • the lid 20 may be formed as a pure metallic layer or have a metallization on that flat side, with which it is placed on the base body 10.
  • the lid 20 may be constrained, e.g. via appropriate hinges or freely placed and removed again.
  • FIGS. 4 and 5 the structure of the SIW filter 1 according to the invention in accordance with the sections Fig. 2 explained.
  • the Fig. 4 shows the cross section B - B of the SIW filter 1 through the insulated area 11a for the case with the lid 20 attached (bottom figure) and without cover 20 (upper figure).
  • the metallizations 11, 13 on the flat sides of the substrate 40, wherein the upper metallization 11 is structured and in the isolated area 11 a and they surrounding metallization 11b is divided. This separation is realized by the circumferential insulation 60.
  • this metallization could also be achieved by additional vias arranged along the edges of the substrate 40.
  • the via 50 connects lower 13 and upper 11 metallization levels in the isolated region 11a. It can be seen in the case without cover 20 that there is no electrical connection between the isolated area 11a and the adjacent metallization 11b. This is first produced by the cover 20, which is placed on the upper metallization 11.
  • Fig. 5 shows the longitudinal section CC Fig. 2B , wherein all vias 50 of an associated group of an isolated area 11a are now recognizable. They respectively connect the lower metallization 13 to the same isolated area 11a. Again, one recognizes the circumferential insulation 60 which separates the isolated region 11a from the remainder of the upper metallization 11. However, this separation is bridged by the cover 20.
  • the distance of an isolated area 11a to the adjacent isolated area (this is in Fig. 5 not shown) - or according to the distance between adjacent groups of vias 50 - is set depending on the wavelength.
  • the vias 50 are surrounded by the substrate 40.
  • the inventive SIW filter 1 allows two functions, depending on whether this is operated with or without cover 20.
  • Fig. 6 the associated filter characteristic is shown, where 220 indicates the degree of reflection and 210 the degree of transmission. It can be seen that the graph of the reflection 220 has a high attenuation outside the passband of about 29-30GHz.
  • Fig. 7 the characteristic of the SIW filter 1 is shown when used without cover 20 (ie only with the base body 10), wherein 120 indicates the degree of reflection and 110 the degree of transmission. It can be seen that very good transmission over a wide frequency range, in this case over the entire Ka band, is achieved by the structuring according to the invention of one of the two flat sides with the isolated regions 11a.
  • the transmission function of the SIW filter 1 makes it possible to transmit signals across the stop band in the filter function.
  • the filter allows transmission for the entire Ka band, such as out Fig. 7 seen.
  • the SIW filter 1 in addition to a selective filter function, allows increased flexibility in the application, which can not be achieved by known SIW filters.
  • any disturbance signal interference within a circuit whose component is the SIW filter 1 according to the invention can be observed.

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  • Control Of Motors That Do Not Use Commutators (AREA)

Claims (5)

  1. Filtre de guide d'ondes intégré au substrat (1), comprenant :
    - un guide d'ondes intégré au substrat formé d'un substrat (40) qui présente respectivement un revêtement métallique (11, 13) sur ses deux faces planes et des structures de délimitation métalliques (12) sur ses bords latéraux,
    - plusieurs groupes de contacts traversants (50) entre les revêtements métalliques (11, 13) des deux faces planes, à l'intérieur du guide d'ondes intégré au substrat, caractérisé en ce que le revêtement métallique (11) de l'une des deux faces planes est structuré de manière à ce qu'il présente une pluralité de régions isolées (11a) du revêtement (11b) avoisinant, dans lequel les régions isolées (11a) individuelles sont associées aux groupes individuels de contacts traversants (50) de manière à ce qu'une région isolée (11a) individuelle soit reliée de manière conductrice à tous les contacts traversants (50) du groupe associé, et en ce qu'il est prévu un couvercle métallique amovible (20) pour recouvrir le revêtement métallique structuré (11), dans lequel, le filtre de guide d'ondes intégré au substrat (1) remplit deux fonctions selon l'utilisation du couvercle (20) :
    - une fonction de filtre présentant une caractéristique de bande passante lorsque le revêtement métallique structuré (11) est recouvert par le couvercle (20),
    - une fonction de transmission lorsque le couvercle (20) ne recouvre pas le revêtement métallique structuré (11), dans lequel la fonction de transmission permet la transmission de signaux sur la totalité de la bande de coupure de la fonction de filtre.
  2. Filtre de guide d'ondes intégré au substrat (1) selon la revendication précédente, caractérisé en ce que la fonction de transmission permet la transmission de signaux sur la totalité de la bande Ka.
  3. Filtre de guide d'ondes intégré au substrat (1) selon l'une des revendications précédentes, caractérisé en ce que le couvercle (20) est conçu pour relier de manière conductrice les régions isolées (11a) au revêtement métallique avoisinant (11b).
  4. Filtre de guide d'ondes intégré au substrat (1) selon l'une des revendications précédentes, caractérisé en ce que la caractéristique du filtre est réglée par la disposition des groupes individuels de contacts traversants (50).
  5. Filtre de guide d'ondes intégré au substrat (1) selon l'une des revendications précédentes, caractérisé en ce que les structures métalliques de délimitation (12) sont formées par métallisation du substrat (40) sur ses surfaces latérales ou par d'autres contacts traversants.
EP17166052.5A 2016-04-23 2017-04-11 Filtre de guide d'ondes intégré à un substrat Not-in-force EP3236530B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102016004929.4A DE102016004929B4 (de) 2016-04-23 2016-04-23 Substrat-integrierter Hohlleiter-Filter

Publications (2)

Publication Number Publication Date
EP3236530A1 EP3236530A1 (fr) 2017-10-25
EP3236530B1 true EP3236530B1 (fr) 2018-10-17

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EP17166052.5A Not-in-force EP3236530B1 (fr) 2016-04-23 2017-04-11 Filtre de guide d'ondes intégré à un substrat

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EP (1) EP3236530B1 (fr)
DE (1) DE102016004929B4 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110854490B (zh) * 2019-11-20 2021-08-13 武汉凡谷电子技术股份有限公司 一种高抑制小型化滤波器
CN113161703A (zh) * 2021-05-10 2021-07-23 国网江苏省电力有限公司电力科学研究院 一种用于电力专网通信的高选择性siw带通滤波器

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JP3733913B2 (ja) * 2002-02-04 2006-01-11 日本電気株式会社 フィルタ
CN104335414A (zh) * 2012-06-04 2015-02-04 日本电气株式会社 带通滤波器
GB201222320D0 (en) * 2012-12-12 2013-01-23 Radio Design Ltd Filter assembly
WO2017051259A1 (fr) * 2015-09-25 2017-03-30 Telefonaktiebolaget Lm Ericsson (Publ) Guide d'ondes commutable à fréquences radio

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Also Published As

Publication number Publication date
DE102016004929B4 (de) 2021-03-11
DE102016004929A1 (de) 2017-10-26
EP3236530A1 (fr) 2017-10-25

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