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EP3236530B1 - Substrate-integrated hollow line filter - Google Patents

Substrate-integrated hollow line filter Download PDF

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Publication number
EP3236530B1
EP3236530B1 EP17166052.5A EP17166052A EP3236530B1 EP 3236530 B1 EP3236530 B1 EP 3236530B1 EP 17166052 A EP17166052 A EP 17166052A EP 3236530 B1 EP3236530 B1 EP 3236530B1
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EP
European Patent Office
Prior art keywords
filter
substrate
vias
cover
siw
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Not-in-force
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EP17166052.5A
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German (de)
French (fr)
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EP3236530A1 (en
Inventor
Axel Brokmeier
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Hensoldt Sensors GmbH
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Hensoldt Sensors GmbH
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Publication of EP3236530A1 publication Critical patent/EP3236530A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/207—Hollow waveguide filters
    • H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
    • H01P1/2088—Integrated in a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/12—Hollow waveguides
    • H01P3/121—Hollow waveguides integrated in a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/12—Hollow waveguides
    • H01P3/123—Hollow waveguides with a complex or stepped cross-section, e.g. ridged or grooved waveguides

Definitions

  • the invention relates to a substrate-integrated waveguide filter (English: Substrate Integrated Waveguide (SIW) filter) for use in microwave technology.
  • SIW Substrate Integrated Waveguide
  • SMT surface mount technology
  • PCBs means (eg SMD processors, resistors and circuits).
  • SIW filters are derived from the basic form of a waveguide. Waveguides as a form of waveguide, such as these are used in particular in radar technology or telecommunications, are increasingly being implemented as a substrate-integrated waveguide (hereinafter "SIW").
  • SIW substrate-integrated waveguide
  • the waveguide is bounded with waveguide walls of conductive material, for example, an upper and a lower waveguide wall are each part of a metallization applied above or below the platinum substrate.
  • the height of the waveguide is limited to the height of the substrate.
  • Lateral waveguide walls are formed, for example, by means of plated-through holes, so-called vias or else by internally metallized trenches, so-called grooves, or by a metallization of the outside, provided that the waveguide space coincides with the edge of the board.
  • the board is designed as a multi-layer board (e.g., tri-plate) and thereby comprises a plurality of substrate layers each of a dielectric material, between each of which a layer of an electrically conductive material, such as copper, is disposed.
  • a stack is formed, wherein the substrate layers can be made of different materials.
  • At least one substrate layer of RF substrate is provided.
  • Additional substrate layers may be conventional platinum substrates, in particular fiber-reinforced epoxy resin.
  • EP 2 858 170 A1 discloses a bandpass filter comprising a dielectric substrate having conductive layers on the surfaces of the substrate, the substrate having a plurality of through holes presenting electrical contact between the opposing conductive layers.
  • the SIW filter according to the invention comprises: a substrate-integrated waveguide which forms from a substrate which has a metallic coating, eg a copper layer, on its two flat sides, as well as metallic delimiting structures at its lateral edges, eg in the form of vias or grooves / Put.
  • a metallic coating eg a copper layer
  • metallic delimiting structures at its lateral edges, eg in the form of vias or grooves / Put.
  • several groups of plated-through holes are arranged between the metallic coatings of the two flat sides.
  • the metallic coating of one of the two flat sides is structured in such a way that it has several regions insulated from the coating surrounding it, ie the metallic coating has isolated regions in the form of individual metallic islands (hereinafter "island regions") the rest of the coating on this flat side no have electrical connection.
  • These individual isolated regions are associated with the individual groups of vias such that a single region is electrically connected to all vias of the associated group.
  • all vias of a group are connected to exactly one island region and thus connected to one another via the island region, but there is no electrical connection to the remaining metallic coating on this flat side of the substrate.
  • the SIW filter according to the invention has a bandpass characteristic, wherein the filter characteristic is created only by adding a metallic, conductive cover. Without this cover, however, the component has a high transmission. It is thus possible to operate the filter according to the invention in two states and to switch between them in a simple manner.
  • FIG. 1 shows the two main modules, the main body 10 of the SIW filter 1 and the lid 20th
  • the main body 10 of the SIW filter 1 comprises a substrate-integrated waveguide.
  • the SIW includes a substrate 40 (see Fig. 4 ), which has on its two flat sides a metallic coating 11, 13, and metallic boundary structures 12 at its lateral edges.
  • Such a SIW could, for example, be constructed from the substrate material RO3003 from Rogers Corporation, which comprises an HF substrate with a copper coating its flat sides, wherein the lateral boundary is achieved by vias or by an additional metallization on the side.
  • the metallic coating 11 on one of the flat sides of the substrate has a structuring as in FIG Fig. 1 shown on.
  • the structuring is designed such that a plurality of isolated regions 11a are formed, wherein the isolated regions 11a provide electrical separation from the surrounding metallization 11b (see FIG Fig. 2 ) on the common flat side.
  • the isolated areas 11a may be understood as a kind of island, which are separated from the remaining areas of the metallic coating on this flat side.
  • the isolated portions 11a are formed in the illustrated embodiment in the form of rectangles having rounded corners. Depending on the field of application and purpose, the shape, number and size of these island areas may differ from the example shown and will be made by the person skilled in the art in accordance with the purpose of the invention.
  • the fabrication of the isolated areas 11a on the flat side of the board may e.g. by an etching process for producing the structures on the board or by printing these structures on the substrate.
  • a plurality of spatially separated groups of plated-through holes 50 are provided to obtain the filter characteristic (see FIG Fig. 4 and 5 ) between the metallic coatings 11, 13 of the two flat sides.
  • a Ka-band E-Plane filter was designed using conventional design techniques for a RWG28 waveguide and modified into a SIW filter 1.
  • the individual groups of vias 50 are each connected to one of the isolated regions 11a.
  • the isolated regions 11a thus virtually form a covering of the vias 50, so that they are in the Fig. 1 are not recognizable. Relative differences in the lengths of the isolated regions 11a correspond to a different number of the underlying vias 50.
  • the isolated regions 11a on the vias 50 form capacitive structures, which result in the desired filter behavior when the cover 20 is placed on and without the cover 20 the behavior of the main body 10 allow as transmission line.
  • Fig. 2 shows as a section A of Fig.1 a single isolated region 11a of the metallic coating 11.
  • the isolated region 11a is separated from the metallic coating 11b surrounding it by a peripheral insulation 60 on which no metallic coating is present, electrically isolated.
  • the substrate 40 present under the metallization 11 is exposed.
  • the vias 50 are indicated on the isolated region 11a. With vias, several traces of a printed circuit board can be electrically interconnected.
  • the vias 50 form within the SIW several spatially separated groups between the metallic coatings 11 and 13 of the two flat sides. Each group is connected to one of the isolated areas 11a. In the present case, the vias 50 thus connect the insulated region 11a with the metallic coating 13 on the other flat side of the substrate 40, the vias 50 being connected to one another via the insulated region 11a.
  • the vias 50 can be embodied as internally metallized bores or as bores completely filled with conductive material, and this also applies to the lateral boundary structures of the SIW, provided they are designed with vias.
  • Fig. 3 shows the SIW filter 1 in a state in which a filter function is achieved (with a characteristic according to FIG Fig. 6 ).
  • the cover 20 is placed on the base body 10, on its structured metallic coating 11, whereby an electrical connection between the isolated areas 11a and the surrounding metallization 11b is produced.
  • the lid 20 is removed, the characteristic of the structure changes. He now shows a transmission behavior over a wide frequency range. An example of this is in the Fig. 7 shown.
  • the lid 20 may be formed as a pure metallic layer or have a metallization on that flat side, with which it is placed on the base body 10.
  • the lid 20 may be constrained, e.g. via appropriate hinges or freely placed and removed again.
  • FIGS. 4 and 5 the structure of the SIW filter 1 according to the invention in accordance with the sections Fig. 2 explained.
  • the Fig. 4 shows the cross section B - B of the SIW filter 1 through the insulated area 11a for the case with the lid 20 attached (bottom figure) and without cover 20 (upper figure).
  • the metallizations 11, 13 on the flat sides of the substrate 40, wherein the upper metallization 11 is structured and in the isolated area 11 a and they surrounding metallization 11b is divided. This separation is realized by the circumferential insulation 60.
  • this metallization could also be achieved by additional vias arranged along the edges of the substrate 40.
  • the via 50 connects lower 13 and upper 11 metallization levels in the isolated region 11a. It can be seen in the case without cover 20 that there is no electrical connection between the isolated area 11a and the adjacent metallization 11b. This is first produced by the cover 20, which is placed on the upper metallization 11.
  • Fig. 5 shows the longitudinal section CC Fig. 2B , wherein all vias 50 of an associated group of an isolated area 11a are now recognizable. They respectively connect the lower metallization 13 to the same isolated area 11a. Again, one recognizes the circumferential insulation 60 which separates the isolated region 11a from the remainder of the upper metallization 11. However, this separation is bridged by the cover 20.
  • the distance of an isolated area 11a to the adjacent isolated area (this is in Fig. 5 not shown) - or according to the distance between adjacent groups of vias 50 - is set depending on the wavelength.
  • the vias 50 are surrounded by the substrate 40.
  • the inventive SIW filter 1 allows two functions, depending on whether this is operated with or without cover 20.
  • Fig. 6 the associated filter characteristic is shown, where 220 indicates the degree of reflection and 210 the degree of transmission. It can be seen that the graph of the reflection 220 has a high attenuation outside the passband of about 29-30GHz.
  • Fig. 7 the characteristic of the SIW filter 1 is shown when used without cover 20 (ie only with the base body 10), wherein 120 indicates the degree of reflection and 110 the degree of transmission. It can be seen that very good transmission over a wide frequency range, in this case over the entire Ka band, is achieved by the structuring according to the invention of one of the two flat sides with the isolated regions 11a.
  • the transmission function of the SIW filter 1 makes it possible to transmit signals across the stop band in the filter function.
  • the filter allows transmission for the entire Ka band, such as out Fig. 7 seen.
  • the SIW filter 1 in addition to a selective filter function, allows increased flexibility in the application, which can not be achieved by known SIW filters.
  • any disturbance signal interference within a circuit whose component is the SIW filter 1 according to the invention can be observed.

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Description

Die Erfindung betrifft einen substrat-integrierten Hohlleiter-Filter (Englisch: Substrate Integrated Waveguide (SIW) Filter) zur Anwendung in der Mikrowellentechnik.The invention relates to a substrate-integrated waveguide filter (English: Substrate Integrated Waveguide (SIW) filter) for use in microwave technology.

Mit der Erweiterung der Surface Mount Technology (SMT), auf hohe Frequenzen bis in das Ka-Band und darüber hinaus, haben SIW-Filter an Bedeutung gewonnen, wobei SMT das Auflöten von SMD-Bauteilen (Surface-Mount Device) in Oberflächenmontagetechnik direkt auf Leiterplatten meint (z.B. SMD Prozessoren, Widerstände und Schaltungen).With the extension of surface mount technology (SMT) to high frequencies up to the Ka band and beyond, SIW filters have gained in importance, with SMT directly upgrading Surface Mount Device (SMD) surface mount technology PCBs means (eg SMD processors, resistors and circuits).

Abgeleitet werden SIW-Filter aus der Grundform eines Wellenleiters. Hohlleiter als eine Form von Wellenleiter, wie diese insbesondere in der Radartechnik oder der Telekommunikation eingesetzt werden, werden immer häufiger als substrat-integrierte Hohlleiter (im Folgenden "SIW") ausgeführt.SIW filters are derived from the basic form of a waveguide. Waveguides as a form of waveguide, such as these are used in particular in radar technology or telecommunications, are increasingly being implemented as a substrate-integrated waveguide (hereinafter "SIW").

Der Aufbau eines SIW erfolgt direkt in der Platine. In diesem Fall wird der Hohlleiter mit Hohlleiterwänden aus leitendem Material begrenzt, beispielsweise sind eine obere und eine untere Hohlleiterwand jeweils Teil einer oberhalb bzw. unterhalb auf das Platinensubstrat aufgebrachten Metallisierung. Die Höhe des Hohlleiters beschränkt sich auf die Höhe des Substrats. Seitliche Hohlleiterwände werden beispielsweise mittels Durchkontaktierungen, sogenannter Vias oder auch mittels innenwandig metallisierter Gräben, sogenannter Grooves ausgebildet, oder durch eine Metallisierung der Außenseite, sofern der Hohlleiterraum mit dem Platinenrand übereinstimmt.The construction of a SIW takes place directly in the board. In this case, the waveguide is bounded with waveguide walls of conductive material, for example, an upper and a lower waveguide wall are each part of a metallization applied above or below the platinum substrate. The height of the waveguide is limited to the height of the substrate. Lateral waveguide walls are formed, for example, by means of plated-through holes, so-called vias or else by internally metallized trenches, so-called grooves, or by a metallization of the outside, provided that the waveguide space coincides with the edge of the board.

Häufig ist die Platine als eine Mehrlagenplatine (z.B. Tri-Plate) ausgeführt und umfasst dabei mehrere Substratschichten aus jeweils einem dielektrischen Material zwischen denen jeweils eine Lage aus einem elektrisch leitenden Material, beispielsweise Kupfer, angeordnet ist. Auf diese Art wird ein Stapel ausgebildet, wobei die Substratschichten aus unterschiedlichen Materialien gefertigt sein können.Often, the board is designed as a multi-layer board (e.g., tri-plate) and thereby comprises a plurality of substrate layers each of a dielectric material, between each of which a layer of an electrically conductive material, such as copper, is disposed. In this way, a stack is formed, wherein the substrate layers can be made of different materials.

Bei Hochfrequenzanwendungen, wie im Radarbereich, ist typischerweise zumindest eine Substratschicht aus einem HF-Substrat vorgesehen. Zusätzliche Substratschichten können herkömmliche Platinensubstrate sein, insbesondere faserverstärktes Epoxidharz.In high frequency applications, such as radar, typically at least one substrate layer of RF substrate is provided. Additional substrate layers may be conventional platinum substrates, in particular fiber-reinforced epoxy resin.

Zur Vermeidung unerwünschter Signale oder zur Signalanpassung werden Filter verwendet. Aus der Literatur sind diese für Rechteckwellenleiter bekannt aus:
Yi-Chi Shih, "Design of Waveguide E-Plane Filters with All-Metal Inserts," in IEEE Transactions on Microwave Theory and Techniques, vol. 32, no. 7, pp. 695-704, Jul 1984. doi: 10.1109/TMTT.1984.1132756 . Shih beschreibt für Wellenleiter einen einfachen Design-Prozess für E-Ebenen Filter mit Ganzmetalleinsätzen innerhalb des Wellenleiters.Filters are used to avoid unwanted signals or to adjust the signal. From the literature these are known for rectangular waveguides from:
Yi-Chi Shih, "Design of Waveguide E-Plane Filters with All-Metal Inserts," in IEEE Transactions on Microwave Theory and Techniques, vol. 32, no. 7, pp. 695-704, Jul 1984. doi: 10.1109 / TMTT.1984.1132756 , Shih describes for waveguides a simple design process for E-plane filters with all-metal inserts inside the waveguide.

R. Vahldieck, J. Bornemann, F. Arndt and D. Grauerholz, "Optimized Waveguide E-plane Metal Insert Filters For Millimeter-wave Applications," in IEEE Transactions on Microwave Theory and Techniques, vol. 31, no. 1, pp. 65-69, Jan. 1983. Doi: 10.1109/ TMTT.1983.1131430 beschreibt ebenso eine Designtheorie für Rechteckhohlleiter mit Metalleinsatzfiltern, wobei die Anwendung für Mittenfrequenzen im Bereich von 15, 33, 68, 75 GHz erläutert wird und für deren gemessene hinzugefügte Bandbreitenverluste für die Mittenfrequenz von 15, 33 und 76 GHz 0,2 , 06 und 0,7 dB betragen. R. Vahldieck, J. Bornemann, F. Arndt and D. Grauerholz, "Optimized Waveguide E-plane Metal Insert Filters For Millimeter-wave Applications," in IEEE Transactions on Microwave Theory and Techniques, vol. 31, no. 1, pp. 65-69, Jan. 1983. Doi: 10.1109 / TMTT.1983.1131430 also describes a design theory for rectangular waveguides with metal insert filters, the application being explained for center frequencies in the range of 15, 33, 68, 75 GHz and for their measured added bandwidth losses for the center frequencies of 15, 33 and 76 GHz 0.2, 06 and 0 , 7 dB.

Außerdem ist in EP 2 858 170 A1 ein Bandpassfilter offenbart, der ein dielektrisches Substrat mit leitfähige Schichten an den Oberflächen des Substrats umfasst, wobei das Substrat mehrere Durchgangslöcher aufweist, die einen elektrischen Kontakt zwischen den gegenüberliegenden leitfähigen Schichten darstellen. In M. Arnendariz et al.: "Tunable SIW Bandpass Filters with PIN Diodes," Proc. of 40th European Microwave Conference, Paris, France, 28th of September 2010, pp. 830-833 ist auch ein einstellbares Bandpassfilter unter Nutzung von PIN Dioden offenbart, wobei die Dioden isolierte Bereiche innerhalb einer Metallisierung überbrücken.It is also in EP 2 858 170 A1 discloses a bandpass filter comprising a dielectric substrate having conductive layers on the surfaces of the substrate, the substrate having a plurality of through holes presenting electrical contact between the opposing conductive layers. In M. Arnendariz et al .: "Tunable SIW Bandpass Filters with PIN Diodes," Proc. of 40th European Microwave Conference, Paris, France, 28th of September 2010, pp. 830-833 Also disclosed is an adjustable bandpass filter utilizing PIN diodes, wherein the diodes bridge isolated regions within a metallization.

In E. Kamran et al.: "Tunable SIW Structures," IEEE Microwave Magazine, June 2015, pp. 34-54 werden verschiedene elektrisch und mechanisch rekonfigurierbare SIW Filter offenbart. Es ist Aufgabe der Erfindung, einen SIW-Filter mit veränderbaren Durchlasseigenschaften zu schaffen.In E. Kamran et al .: "Tunable SIW Structures," IEEE Microwave Magazine, June 2015, p. 34-54 Various electrically and mechanically reconfigurable SIW filters are disclosed. It is an object of the invention to provide a SIW filter with variable transmission characteristics.

Diese Aufgabe wird mit dem SIW-Filter gemäß Patentanspruch 1 gelöst. Vorteilhafte Ausführungen der Erfindung sind Gegenstand von Unteransprüchen.This object is achieved with the SIW filter according to claim 1. Advantageous embodiments of the invention are the subject of dependent claims.

Der erfindungsgemäße SIW-Filter umfasst: Einen substrat-integrierten Hohlleiter, der sich aus einem Substrat bildet, das an seinen beiden Flachseiten eine metallische Beschichtung z.B. eine Kupferschicht aufweist, sowie metallische Begrenzungsstrukturen an seinen seitlichen Rändern aufweist z.B. in der Form von Durchkontaktierungen oder Grooves / Fugen. Innerhalb des SIW sind mehrere Gruppen von Durchkontaktierungen zwischen den metallischen Beschichtungen der beiden Flachseiten angeordnet. Dabei ist die metallische Beschichtung einer der beiden Flachseiten derart strukturiert, dass sie mehrere, gegenüber der sie umgebenden Beschichtung isolierte Bereiche aufweist, d.h. dass die metallische Beschichtung isolierte Bereiche in der Art von einzelnen metallischen Inseln (im Folgenden "Inselbereiche") aufweist, die zu der übrigen Beschichtung auf dieser Flachseite keinerlei elektrische Verbindung aufweisen. Diese einzelnen isolierten Bereiche sind den einzelnen Gruppen von Durchkontaktierungen derart zugeordnet, dass ein einzelner Bereich mit sämtlichen Durchkontaktierungen der zugeordneten Gruppe elektrisch verbunden ist.The SIW filter according to the invention comprises: a substrate-integrated waveguide which forms from a substrate which has a metallic coating, eg a copper layer, on its two flat sides, as well as metallic delimiting structures at its lateral edges, eg in the form of vias or grooves / Put. Within the SIW several groups of plated-through holes are arranged between the metallic coatings of the two flat sides. In this case, the metallic coating of one of the two flat sides is structured in such a way that it has several regions insulated from the coating surrounding it, ie the metallic coating has isolated regions in the form of individual metallic islands (hereinafter "island regions") the rest of the coating on this flat side no have electrical connection. These individual isolated regions are associated with the individual groups of vias such that a single region is electrically connected to all vias of the associated group.

In anderen Worten, alle Vias einer Gruppe sind mit genau einem Inselbereich verbunden und somit über den Inselbereich untereinander verbunden, wobei aber keine elektrische Verbindung zur übrigen metallischen Beschichtung auf dieser Flachseite des Substrats vorhanden ist.In other words, all vias of a group are connected to exactly one island region and thus connected to one another via the island region, but there is no electrical connection to the remaining metallic coating on this flat side of the substrate.

Zusätzlich ist ein abnehmbarer metallischer Deckel zur Abdeckung der derart strukturierten Beschichtung vorhanden, wobei abhängig vom Einsatz des Deckels der SIW-Filter zwei Funktionen ermöglicht:

  • eine Filterfunktion bei Abdeckung der strukturierten metallischen Beschichtung durch den Deckel,
  • eine Transmissionsfunktion, wenn der Deckel die strukturierte metallische Beschichtung nicht abdeckt.
In addition, a removable metallic cover is provided to cover the coating structured in this way, and depending on the use of the cover, the SIW filter has two functions:
  • a filter function when the structured metallic coating is covered by the lid,
  • a transmission function when the lid does not cover the structured metallic coating.

Der erfindungsgemäße SIW-Filter weist eine Bandpasscharakteristik auf, wobei erst durch Hinzufügen eines metallischen, leitfähigen Deckels die Filtercharakteristik entsteht. Ohne diesen Deckel weist das Bauteil dagegen eine hohe Transmission auf. Es ist somit möglich, den erfindungsgemäßen Filter in zwei Zuständen zu betreiben und zwischen diesen auf einfache Weise umzuschalten.The SIW filter according to the invention has a bandpass characteristic, wherein the filter characteristic is created only by adding a metallic, conductive cover. Without this cover, however, the component has a high transmission. It is thus possible to operate the filter according to the invention in two states and to switch between them in a simple manner.

Die Erfindung wird anhand eines konkreten Ausführungsbeispiels unter Bezugnahme auf Fig. 1 bis 7 näher erläutert. Es zeigen:

Fig. 1
einen erfindungsgemäßen SIW-Filter mit seinen Hauptelementen
Fig. 2
eine Detaildarstellung der Umgebung eines isolierten Bereichs der metallischen Beschichtung des erfindungsgemäßen SIW-Filters
Fig. 3
einen erfindungsgemäßen SIW-Filter mit aufgesetztem Deckel
Fig. 4
einen Querschnitt durch den isolierten Bereich des SIW-Filters aus Fig. 2
Fig. 5
einen Längsschnitt durch den isolierten Bereich des SIW-Filters aus Fig. 2
Fig. 6
die Filtercharakteristik eines erfindungsgemäßen SIW-Filters mit aufgelegtem Deckel
Fig. 7
das Transmissionsverhalten eines erfindungsgemäßen SIW-Filters ohne Deckel.
The invention will be described with reference to a concrete embodiment with reference to Fig. 1 to 7 explained in more detail. Show it:
Fig. 1
a SIW filter according to the invention with its main elements
Fig. 2
a detailed representation of the environment of an isolated region of the metallic coating of the SIW filter according to the invention
Fig. 3
a SIW filter according to the invention with an attached lid
Fig. 4
a cross section through the isolated region of the SIW filter Fig. 2
Fig. 5
a longitudinal section through the isolated region of the SIW filter Fig. 2
Fig. 6
the filter characteristic of a SIW filter according to the invention with a lid on
Fig. 7
the transmission behavior of a SIW filter according to the invention without cover.

Der prinzipielle Aufbau eines erfindungsgemäßen SIW-Filters 1 ist in Fig. 1 dargestellt. Fig. 1 zeigt die beiden Hauptbaugruppen, den Grundkörper 10 des SIW-Filters 1 und den Deckel 20.The basic structure of a SIW filter 1 according to the invention is shown in FIG Fig. 1 shown. Fig. 1 shows the two main modules, the main body 10 of the SIW filter 1 and the lid 20th

Der Grundkörper 10 des SIW-Filters 1 umfasst einen substrat-integrierten Hohlleiter. Der SIW umfasst ein Substrat 40 (siehe Fig. 4), das an seinen beiden Flachseiten eine metallische Beschichtung 11, 13 aufweist, sowie metallische Begrenzungsstrukturen 12 an seinen seitlichen Rändern.The main body 10 of the SIW filter 1 comprises a substrate-integrated waveguide. The SIW includes a substrate 40 (see Fig. 4 ), which has on its two flat sides a metallic coating 11, 13, and metallic boundary structures 12 at its lateral edges.

Ein derartiger SIW könnte beispielsweise aus dem Substratmaterial RO3003 der Firma Rogers Corporation, aufgebaut sein, das ein HF-Substrat mit einer Kupferbeschichtung auf seinen Flachseiten darstellt, wobei die seitliche Begrenzung durch Vias oder durch eine zusätzliche Metallisierung an der Seite erreicht wird.Such a SIW could, for example, be constructed from the substrate material RO3003 from Rogers Corporation, which comprises an HF substrate with a copper coating its flat sides, wherein the lateral boundary is achieved by vias or by an additional metallization on the side.

Die metallische Beschichtung 11 auf einer der Flachseiten des Substrats weist eine Strukturierung wie in der Fig. 1 dargestellt auf. Die Strukturierung ist derart ausgebildet, dass mehrere isolierte Bereiche 11a gebildet sind, wobei die isolierten Bereiche 11a eine elektrische Trennung von der sie umgebenden Metallisierung 11b (siehe Fig. 2) auf der gemeinsamen Flachseite aufweisen. Die isolierten Bereiche 11a können als eine Art Insel verstanden werden, die von den übrigen Bereichen der metallischen Beschichtung auf dieser Flachseite getrennt sind. Die isolierten Bereiche 11a sind in der gezeigten Ausführung in der Form von Rechtecken mit abgerundeten Ecken ausgebildet. Abhängig vom Anwendungsbereich und Zweck kann sich die Form, Anzahl und Größe dieser Inselbereiche von dem gezeigten Beispiel unterscheiden und wird vom Fachmann entsprechend des Einsatzzwecks im Sinne der Erfindung angefertigt.The metallic coating 11 on one of the flat sides of the substrate has a structuring as in FIG Fig. 1 shown on. The structuring is designed such that a plurality of isolated regions 11a are formed, wherein the isolated regions 11a provide electrical separation from the surrounding metallization 11b (see FIG Fig. 2 ) on the common flat side. The isolated areas 11a may be understood as a kind of island, which are separated from the remaining areas of the metallic coating on this flat side. The isolated portions 11a are formed in the illustrated embodiment in the form of rectangles having rounded corners. Depending on the field of application and purpose, the shape, number and size of these island areas may differ from the example shown and will be made by the person skilled in the art in accordance with the purpose of the invention.

Die Herstellung der isolierten Bereiche 11a auf der Flachseite der Platine kann z.B. durch einen Ätzprozess zur Herstellung der Strukturen auf der Platine oder durch Aufdruck dieser Strukturen auf das Substrat erfolgen.The fabrication of the isolated areas 11a on the flat side of the board may e.g. by an etching process for producing the structures on the board or by printing these structures on the substrate.

In dem von dem SIW gebildeten Hohlraum sind zur Erzielung der Filtercharakteristik mehrere räumlich getrennte Gruppen von Durchkontaktierungen 50 (siehe Fig. 4 und 5) zwischen den metallischen Beschichtungen 11, 13 der beiden Flachseiten angeordnet. Im vorliegenden Beispiel wurde ein Ka-Band E-Plane Filter unter Verwendung herkömmlicher Design-Methoden für einen RWG28-Hohlleiter entworfen und zu einem SIW-Filter 1 abgeändert. Wie im Folgenden noch im Detail erläutert werden wird, sind die einzelnen Gruppen von Vias 50 jeweils mit einem der isolierten Bereiche 11a verbunden. Die isolierten Bereiche 11a bilden somit quasi eine Abdeckung der Vias 50, so dass sie in der Fig. 1 nicht zu erkennen sind. Relative Unterschiede in den Längen der isolierten Bereiche 11a entsprechen dabei einer unterschiedliche Anzahl der darunterliegenden Vias 50. Die isolierten Bereiche 11a auf den Vias 50 bilden kapazitive Strukturen, die bei Auflegen des Deckels 20 das gewünschte Filterverhalten ergeben und ohne Deckel 20 das Verhalten des Grundkörpers 10 als Transmissionsleitung ermöglichen.In the cavity formed by the SIW, a plurality of spatially separated groups of plated-through holes 50 are provided to obtain the filter characteristic (see FIG Fig. 4 and 5 ) between the metallic coatings 11, 13 of the two flat sides. In the present example, a Ka-band E-Plane filter was designed using conventional design techniques for a RWG28 waveguide and modified into a SIW filter 1. As will be explained in detail below, the individual groups of vias 50 are each connected to one of the isolated regions 11a. The isolated regions 11a thus virtually form a covering of the vias 50, so that they are in the Fig. 1 are not recognizable. Relative differences in the lengths of the isolated regions 11a correspond to a different number of the underlying vias 50. The isolated regions 11a on the vias 50 form capacitive structures, which result in the desired filter behavior when the cover 20 is placed on and without the cover 20 the behavior of the main body 10 allow as transmission line.

Fig. 2 zeigt als Ausschnitt A der Fig.1 einen einzelnen isolierten Bereich 11a der metallischen Beschichtung 11. Der isolierte Bereich 11a ist von der ihn umgebenden metallischen Beschichtung 11b durch eine umlaufende Isolierung 60, an dem keine metallische Beschichtung vorhanden ist, elektrisch getrennt. Im Bereich der umlaufenden Isolierung 60 ist das unter der Metallisierung 11 vorhandene Substrat 40 freigelegt. Fig. 2 shows as a section A of Fig.1 a single isolated region 11a of the metallic coating 11. The isolated region 11a is separated from the metallic coating 11b surrounding it by a peripheral insulation 60 on which no metallic coating is present, electrically isolated. In the area of the peripheral insulation 60, the substrate 40 present under the metallization 11 is exposed.

Zudem sind auf dem isolierten Bereich 11a die Vias 50 angedeutet. Mit Vias können mehrere Leiterbahnebenen einer Leiterplatte elektrisch miteinander verbunden werden. Die Vias 50 bilden innerhalb des SIW mehrere räumlich getrennte Gruppen zwischen den metallischen Beschichtungen 11 und 13 der beiden Flachseiten. Dabei ist jede Gruppe mit einem der isolierten Bereiche 11a verbunden. Im vorliegenden Fall verbinden somit die Vias 50 den isolierten Bereich 11a mit der metallischen Beschichtung 13 auf der anderen Flachseite des Substrats 40, wobei die Vias 50 untereinander über den isolierten Bereich 11a verbunden sind.In addition, the vias 50 are indicated on the isolated region 11a. With vias, several traces of a printed circuit board can be electrically interconnected. The vias 50 form within the SIW several spatially separated groups between the metallic coatings 11 and 13 of the two flat sides. Each group is connected to one of the isolated areas 11a. In the present case, the vias 50 thus connect the insulated region 11a with the metallic coating 13 on the other flat side of the substrate 40, the vias 50 being connected to one another via the insulated region 11a.

Dabei können die Vias 50 als innenwandig metallisierte Bohrungen oder auch als komplett mit leitendem Material ausgefüllte Bohrungen ausgeführt sein, wobei dies auch für die seitlichen Begrenzungsstrukturen des SIW gilt, sofern diese mit Vias ausgeführt sind.In this case, the vias 50 can be embodied as internally metallized bores or as bores completely filled with conductive material, and this also applies to the lateral boundary structures of the SIW, provided they are designed with vias.

Fig. 3 zeigt den SIW-Filter 1 in einem Zustand, in dem eine Filterfunktion erreicht wird (mit einer Charakteristik gemäß Fig. 6). Dazu ist der Deckel 20 auf dem Grundkörper 10, und zwar auf dessen strukturierter metallischen Beschichtung 11 aufgelegt, wodurch eine elektrische Verbindung zwischen den isolierten Bereichen 11a und der sie umgebenden Metallisierung 11b hergestellt wird.
Wird der Deckel 20 entfernt, ändert sich die Charakteristik des Aufbaus. Er zeigt nun ein Transmissionsverhalten über einen weiten Frequenzbereich. Ein Beispiel hierfür ist in der Fig. 7 dargestellt. Fig. 3 shows the SIW filter 1 in a state in which a filter function is achieved (with a characteristic according to FIG Fig. 6 ). For this purpose, the cover 20 is placed on the base body 10, on its structured metallic coating 11, whereby an electrical connection between the isolated areas 11a and the surrounding metallization 11b is produced.
When the lid 20 is removed, the characteristic of the structure changes. He now shows a transmission behavior over a wide frequency range. An example of this is in the Fig. 7 shown.

Der Deckel 20 kann als reine metallische Schicht ausgebildet sein oder eine Metallisierung auf derjenigen Flachseite aufweisen, mit der er auf den Grundkörper 10 aufgelegt wird. Der Deckel 20 kann zwangsgeführt werden, z.B. über entsprechende Scharniere oder frei aufgelegt und wieder abgenommen werden.The lid 20 may be formed as a pure metallic layer or have a metallization on that flat side, with which it is placed on the base body 10. The lid 20 may be constrained, e.g. via appropriate hinges or freely placed and removed again.

In den Figuren 4 und 5 wird nachfolgend der Aufbau des erfindungsgemäßen SIW-Filters 1 gemäß den Schnitten aus Fig. 2 erläutert. Die Fig. 4 zeigt den Querschnitt B--B des SIW-Filters 1 durch den isolierten Bereich 11a für den Fall mit aufgesetztem Deckel 20 (untere Abbildung) und ohne Deckel 20 (obere Abbildung).
Man erkennt die Metallisierungen 11, 13 an den Flachseiten des Substrats 40, wobei die obere Metallisierung 11 strukturiert ist und in den isolierten Bereich 11a und die sie umgebende Metallisierung 11b unterteilt ist. Diese Trennung wird realisiert durch die umlaufende Isolierung 60.
An den seitlichen Rändern ist eine weitere Metallisierung 12 zur Bildung eines geschlossenen Hohlraums des SIW vorhanden. Diese Metallisierung könnte alternativ auch durch zusätzliche Vias erreicht werden, die entlang der Ränder des Substrats 40 angeordnet sind.In the FIGS. 4 and 5 Below, the structure of the SIW filter 1 according to the invention in accordance with the sections Fig. 2 explained. The Fig. 4 shows the cross section B - B of the SIW filter 1 through the insulated area 11a for the case with the lid 20 attached (bottom figure) and without cover 20 (upper figure).
It can be seen the metallizations 11, 13 on the flat sides of the substrate 40, wherein the upper metallization 11 is structured and in the isolated area 11 a and they surrounding metallization 11b is divided. This separation is realized by the circumferential insulation 60.
At the lateral edges there is another metallization 12 for forming a closed cavity of the SIW. Alternatively, this metallization could also be achieved by additional vias arranged along the edges of the substrate 40.

Die Durchkontaktierung 50 verbindet untere 13 und obere 11 Metallisierungsebene im isolierten Bereich 11a. Man erkennt im Fall ohne Deckel 20, dass keine elektrische Verbindung zwischen dem isolierten Bereich 11a und der benachbarten Metallisierung 11b vorliegt. Diese wird erst durch den Deckel 20 hergestellt, der auf die obere Metallisierung 11 platziert ist.The via 50 connects lower 13 and upper 11 metallization levels in the isolated region 11a. It can be seen in the case without cover 20 that there is no electrical connection between the isolated area 11a and the adjacent metallization 11b. This is first produced by the cover 20, which is placed on the upper metallization 11.

Fig. 5 zeigt den Längsschnitt C-C aus Fig. 2B, wobei alle Vias 50 einer zugeordneten Gruppe eines isolierten Bereichs 11a nun zu erkennen sind. Sie verbinden jeweils die untere Metallisierung 13 mit demselben isolierten Bereich 11a. Auch hier erkennt man die umlaufende Isolierung 60, die den isolierten Bereich 11a vom Rest der oberen Metallisierung 11 trennt. Diese Trennung wird jedoch durch den Deckel 20 überbrückt. Der Abstand eines isolierten Bereichs 11a zum benachbarten isolierten Bereich (dieser ist in Fig. 5 nicht dargestellt) - oder entsprechend der Abstand zwischen benachbarten Gruppen von Vias 50 - wird abhängig von der Wellenlänge eingestellt. Die Vias 50 sind vom Substrat 40 umgeben. Fig. 5 shows the longitudinal section CC Fig. 2B , wherein all vias 50 of an associated group of an isolated area 11a are now recognizable. They respectively connect the lower metallization 13 to the same isolated area 11a. Again, one recognizes the circumferential insulation 60 which separates the isolated region 11a from the remainder of the upper metallization 11. However, this separation is bridged by the cover 20. The distance of an isolated area 11a to the adjacent isolated area (this is in Fig. 5 not shown) - or according to the distance between adjacent groups of vias 50 - is set depending on the wavelength. The vias 50 are surrounded by the substrate 40.

Der erfindungsgemäße SIW-Filter 1 ermöglicht zwei Funktionen, abhängig davon ob dieser mit oder ohne Deckel 20 betrieben wird. In Fig. 6 ist die zugehörige Filtercharakteristik dargestellt, wobei 220 das Maß der Reflexion und 210 das Maß der Transmission angibt. Man erkennt, dass der Graph der Reflexion 220 eine hohe Dämpfung außerhalb des Durchlassbereichs von ca. 29-30GHz aufweist.The inventive SIW filter 1 allows two functions, depending on whether this is operated with or without cover 20. In Fig. 6 the associated filter characteristic is shown, where 220 indicates the degree of reflection and 210 the degree of transmission. It can be seen that the graph of the reflection 220 has a high attenuation outside the passband of about 29-30GHz.

In Fig. 7 ist die Charakteristik des SIW-Filters 1 bei Anwendung ohne Deckel 20 dargestellt (also nur mit dem Grundkörper 10), wobei 120 das Maß der Reflexion und 110 das Maß der Transmission angibt. Man erkennt, dass durch die erfindungsgemäße Strukturierung einer der beiden Flachseiten mit den isolierten Bereichen 11a eine sehr gute Transmission über einen weiten Frequenzbereich, hier über das gesamt Ka-Band, erreicht wird. Allgemein wird mit der Transmissionsfunktion des SIW-Filters 1 eine Durchlässigkeit für Signale über das Sperrband in der Filterfunktion ermöglicht. Beispielsweise ermöglicht der Filter eine Transmission für das gesamte Ka-Band, wie aus Fig. 7 ersichtlich.In Fig. 7 the characteristic of the SIW filter 1 is shown when used without cover 20 (ie only with the base body 10), wherein 120 indicates the degree of reflection and 110 the degree of transmission. It can be seen that very good transmission over a wide frequency range, in this case over the entire Ka band, is achieved by the structuring according to the invention of one of the two flat sides with the isolated regions 11a. In general, the transmission function of the SIW filter 1 makes it possible to transmit signals across the stop band in the filter function. For example, the filter allows transmission for the entire Ka band, such as out Fig. 7 seen.

Somit erlaubt der erfindungsgemäße SIW-Filter 1 neben einer trennscharfen Filterfunktion eine erhöhte Flexibilität in der Anwendung, was durch bekannte SIW-Filter nicht erreicht werden kann.Thus, in addition to a selective filter function, the SIW filter 1 according to the invention allows increased flexibility in the application, which can not be achieved by known SIW filters.

Mit der Erfindung ist es möglich, in einer Schaltung die Wahl zwischen niedrigen Einfügungsdämpfungen und hoher Isolation für definierte Bereiche eines Spektrums lediglich durch Hinzufügen bzw. Weglassen eines Deckels zu ermöglichen.With the invention, it is possible to enable in a circuit the choice between low insertion losses and high isolation for defined regions of a spectrum merely by adding or omitting a cover.

Zudem besteht die Möglichkeit, mit der Erfindung die Bandbreiten in einer Schaltung nur durch Hinzufügen bzw. Weglassen des Deckels zu modifizieren, in dem ein erfindungsgemäßer Filter mit einem zweiten, herkömmlichen Filter in Reihe geschaltet wird.In addition, with the invention it is possible to modify the bandwidths in a circuit only by adding or omitting the cover, in which a filter according to the invention is connected in series with a second, conventional filter.

Durch Umschalten vom Filter- in den Transmissionszustand können eventuelle Störsignaleinstreuungen innerhalb einer Schaltung, deren Bestandteil der erfindungsgemäße SIW-Filter 1 ist, beobachtet werden.By switching from the filter to the transmission state, any disturbance signal interference within a circuit whose component is the SIW filter 1 according to the invention can be observed.

Claims (5)

  1. Substrate integrated waveguide filter (1) comprising:
    - a substrate integrated waveguide, formed from a substrate (40) having a respective metallic coating (11, 13) at its two flat sides and also having metallic delimitation structures (12) at its lateral edges,
    - within the substrate integrated waveguide a plurality of groups of vias (50) between the metallic coatings (11, 13) of the two flat sides,
    characterized in that
    the metallic coating (11) of one of the two flat sides is structured in such a way that it has a plurality of regions (11a) insulated from the coating (11b) surrounding them, wherein the individual insulated regions (11a) are assigned to the individual groups of vias (50) in such a way that an individual insulated region (11a) is conductively connected to all the vias (50) of the assigned group, and that a removable metallic cover (20) for covering the structured metallic coating (11) is present, wherein, depending on the use of the cover (20), the substrate integrated waveguide filter (1) enables two functions:
    - a filter function having a bandpass filter characteristic in the case where the structured metallic coating (11) is covered by the cover (20),
    - a transmission function if the cover (20) does not cover the structured metallic coating (11), wherein the transmission function enables a transmissivity for signals over the entire stop band of the filter function.
  2. Substrate integrated waveguide filter (1) according to the preceding claim, characterized in that the transmission function enables a transmissivity for signals over the entire Ka band.
  3. Substrate integrated waveguide filter (1) according to either of the preceding claims, characterized in that the cover (20) is configured to conductively connect the insulated regions (11a) to the metallic coating (11b) surrounding them.
  4. Substrate integrated waveguide filter (1) according to any of the preceding claims, characterized in that the filter characteristic is set by the arrangement of the individual groups of vias (50).
  5. Substrate integrated waveguide filter (1) according to any of the preceding claims, characterized in that the metallic delimitation structures (12) are formed by a metallization of the substrate (40) at its side surfaces or by further vias.
EP17166052.5A 2016-04-23 2017-04-11 Substrate-integrated hollow line filter Not-in-force EP3236530B1 (en)

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CN110854490B (en) * 2019-11-20 2021-08-13 武汉凡谷电子技术股份有限公司 High-suppression miniaturized filter
CN113161703A (en) * 2021-05-10 2021-07-23 国网江苏省电力有限公司电力科学研究院 High-selectivity SIW band-pass filter for power private network communication

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JP3733913B2 (en) * 2002-02-04 2006-01-11 日本電気株式会社 filter
WO2013183354A1 (en) * 2012-06-04 2013-12-12 日本電気株式会社 Band-pass filter
GB201222320D0 (en) * 2012-12-12 2013-01-23 Radio Design Ltd Filter assembly
US10665917B2 (en) * 2015-09-25 2020-05-26 Telefonaktiebolaget Lm Ericsson (Publ) Radio frequency switchable waveguide

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