[go: up one dir, main page]

EP0012889A2 - Vorrichtung zum Reduzieren der Empfindlichkeit der Schwellenspannung eines MOSFET oder eines MISFET gegen Schwankungen der am Substrat angelegten Spannung - Google Patents

Vorrichtung zum Reduzieren der Empfindlichkeit der Schwellenspannung eines MOSFET oder eines MISFET gegen Schwankungen der am Substrat angelegten Spannung Download PDF

Info

Publication number
EP0012889A2
EP0012889A2 EP79104894A EP79104894A EP0012889A2 EP 0012889 A2 EP0012889 A2 EP 0012889A2 EP 79104894 A EP79104894 A EP 79104894A EP 79104894 A EP79104894 A EP 79104894A EP 0012889 A2 EP0012889 A2 EP 0012889A2
Authority
EP
European Patent Office
Prior art keywords
substrate
type
impurities
semiconductor
energy levels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP79104894A
Other languages
English (en)
French (fr)
Other versions
EP0012889A3 (en
EP0012889B1 (de
Inventor
Billy Lee Crowder
Fritz Heinrich Gaensslen
Richard Charles Jaeger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of EP0012889A2 publication Critical patent/EP0012889A2/de
Publication of EP0012889A3 publication Critical patent/EP0012889A3/fr
Application granted granted Critical
Publication of EP0012889B1 publication Critical patent/EP0012889B1/de
Expired legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants

Definitions

  • the present invention relates to field effect transistors of the metal-oxide-semiconductor (called MOSFET) or metal-insulator-semiconductor (MISFET) type and more particularly, such transistors comprising a structure making it possible to reduce their sensitivity to substrate voltage variations.
  • MOSFET metal-oxide-semiconductor
  • MISFET metal-insulator-semiconductor
  • One of the objects of the invention is to overcome the drawbacks described above in order to reduce the sensitivity of a MOSFET device to variations in the voltage applied to its substrate. This object is achieved by introducing into the depletion region, located below the door, impurities having a sufficiently deep energy level and a sufficiently low diffusion rate.
  • the ionized donors partially compensate for the charge of the acceptors normally present. This compensation results in a significant reduction in the sensitivity of the device to variations in the voltage applied to the substrate.
  • Another object of the invention is to compensate for the increase in the threshold voltage; and thereby improve the performance and yield of the devices of the MOSFET type.
  • FIG. 1 a section of a MOSFET device in which a p-type substrate 1 comprises a source diffusion 2 of type n and a drain diffusion 3 of type n separated by a channel region 4 on which is arranged a metal door 5 which is separated by an oxide 6 from the surface of the substrate 1.
  • External electrodes, 7, 8, 9 and 12 are respectively associated with the source 2, with the door 5, with the drain 3 and with the substrate 1 .
  • the application, between gate 5 and source 2, of a signal of sufficiently large amplitude creates an electron conducting channel 10 between the source and the drain.
  • the gate voltage necessary to create this channel is called threshold voltage and is a function of the potential applied to the substrate as shown in Figure 2 (in which V TH is the threshold voltage and V sx is the substrate voltage).
  • the channel 10 is separated from the body of the substrate by a depletion region 11.
  • the device shown in FIG. 1 undergoes an increase in the threshold voltage, so that signals of increasing amplitude must be applied to the electrode. door 8 to maintain conduction. This modification of the threshold voltage causes a deterioration in the efficiency of the circuit.
  • donors with deep energy levels are introduced into the depletion region 11 at a concentration such that, in operation, some of these donors are ionized. Being ionized, these donors produce an additional positive charge which makes it possible to compensate for the usual increase in the negative charge of acceptors which takes place when the potential difference between the source and the substrate increases. In a normal device, this increase in the charge and the acceptors is the cause of the increase in the threshold voltage.
  • the suitable energy level of the donors is 0.2 to 0.3 eV below the level of the edge of the conduction band. It is also important that the introduced impurities have a low diffusion rate so as to avoid their migration, both during the subsequent heat treatment stages and during the operation of the device.
  • FIG. 2 is a graph representing the variations of the threshold voltage V TH as a function of the voltage V SX applied to the substrate in the case of the two main types of MOSFET devices, that is to say devices operating respectively in the enrichment mode and in the impoverishment mode.
  • the threshold voltage undergoes a variation greater than 0.5 volts over a range of voltages V SX of between 0 and 6 volts.
  • the variation is of the order of 0.375 volts. This variation must be taken into account when studying circuits using the use of such devices and places a limit on their performance.
  • Figure 3 illustrates the behavior, at the temperature of liquid nitrogen, of a device operating in the depletion mode such as that of FIG. 2. At this temperature, a large part of the donors is immobilized, as indicated by the increase in the threshold voltage which occurs. When the voltage applied to the substrate is increased, the sensitivity of the device becomes significantly lower than the sensitivity that can be observed at ambient temperature. This phenomenon is due to a greater ionization of immobilized donors. An additional positive charge thus becomes available, which has the effect of partially compensating for the negative charge which is normally observed in the body of the device at such voltages.
  • the donors have a low diffusion speed and lower energy levels than that of the edge of the conduction band, this value varying with the operating temperature. If the device operates at room temperature, tellurium can be used as the donor.
  • Figure 4 illustrates the improvement that the present invention achieves.
  • Curve A corresponds to a control device comprising a uniformly-doped substrate of type of conductivity p such as the substrate 1 of FIG. 1 and whose resistivity is approximately 0.5 ohm-cm. This curve corresponds to the yield of a typical device in which the present invention has not been implemented.
  • Curves B, C and D correspond to devices for which determined doses of tellurium have been implanted in region 10 or 11 located below the door of the device (see Figure 1). Curves B, C and D indicate that the sensitivity of the device to variations in the voltage applied to its substrate decreases as the dose of tellurium implantation is increased.
  • this implantation dose is 5 ⁇ 10 11 atoms / cm 2 .
  • the sensitivity obtained is better than in the case of curve A.
  • the implantation dose of tellurium was increased to 1x10 12 atoms / cm 2 and the improvement obtained is even more important.
  • the tellurium implantation dose was 2 ⁇ 10 12 atoms / cm 2
  • the sensitivity obtained is almost linear in a range of substrate potentials ranging from 0 to 8 volts.
  • Impurities at deep energy levels can be introduced by ion implantation or by diffusion, or using any other conventional technique.
  • the ion implantation technique makes it possible to obtain, below the surface, concentration levels independent of each other. This is particularly advantageous, as shown in FIG. 1, when the location of the desired concentration is in region 11 of the device and, for various reasons, it is desired that this concentration is independent of that present in region 10. It is for this reason that an ion implantation technique is considered preferable.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
EP79104894A 1978-12-29 1979-12-04 Vorrichtung zum Reduzieren der Empfindlichkeit der Schwellenspannung eines MOSFET oder eines MISFET gegen Schwankungen der am Substrat angelegten Spannung Expired EP0012889B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/974,594 US4274105A (en) 1978-12-29 1978-12-29 MOSFET Substrate sensitivity control
US974594 1978-12-29

Publications (3)

Publication Number Publication Date
EP0012889A2 true EP0012889A2 (de) 1980-07-09
EP0012889A3 EP0012889A3 (en) 1981-12-30
EP0012889B1 EP0012889B1 (de) 1983-11-30

Family

ID=25522234

Family Applications (1)

Application Number Title Priority Date Filing Date
EP79104894A Expired EP0012889B1 (de) 1978-12-29 1979-12-04 Vorrichtung zum Reduzieren der Empfindlichkeit der Schwellenspannung eines MOSFET oder eines MISFET gegen Schwankungen der am Substrat angelegten Spannung

Country Status (6)

Country Link
US (1) US4274105A (de)
EP (1) EP0012889B1 (de)
JP (1) JPS5591875A (de)
CA (1) CA1130473A (de)
DE (1) DE2966452D1 (de)
IT (1) IT1164542B (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2550662A1 (fr) * 1983-08-12 1985-02-15 American Telephone & Telegraph Dispositif a effet de champ utilisant une condition de figeage des porteurs majoritaires
GB2212326A (en) * 1987-06-03 1989-07-19 Mitsubishi Electric Corp Reduction of soft errors in semiconductor integrated circuit

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4472871A (en) * 1978-09-21 1984-09-25 Mostek Corporation Method of making a plurality of MOSFETs having different threshold voltages
US4990974A (en) * 1989-03-02 1991-02-05 Thunderbird Technologies, Inc. Fermi threshold field effect transistor
US5440160A (en) * 1992-01-28 1995-08-08 Thunderbird Technologies, Inc. High saturation current, low leakage current fermi threshold field effect transistor
US5525822A (en) * 1991-01-28 1996-06-11 Thunderbird Technologies, Inc. Fermi threshold field effect transistor including doping gradient regions
US5369295A (en) * 1992-01-28 1994-11-29 Thunderbird Technologies, Inc. Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US5786620A (en) * 1992-01-28 1998-07-28 Thunderbird Technologies, Inc. Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same
US5543654A (en) * 1992-01-28 1996-08-06 Thunderbird Technologies, Inc. Contoured-tub fermi-threshold field effect transistor and method of forming same
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors
US5367186A (en) * 1992-01-28 1994-11-22 Thunderbird Technologies, Inc. Bounded tub fermi threshold field effect transistor
US5436498A (en) * 1994-02-04 1995-07-25 Motorola, Inc. Gettering of impurities by forming a stable chemical compound

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2954308A (en) * 1956-05-21 1960-09-27 Ibm Semiconductor impurity diffusion
US3449644A (en) * 1964-12-16 1969-06-10 Philips Corp Semiconductor device with inversion layer,underneath an oxide coating,compensated by gold dopant
DE2638867A1 (de) * 1976-08-28 1978-03-02 Licentia Gmbh Verfahren zum herstellen eines selbstleitenden mos-feldeffekttransistors

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3248677A (en) * 1961-10-27 1966-04-26 Ibm Temperature compensated semiconductor resistor
GB1153428A (en) * 1965-06-18 1969-05-29 Philips Nv Improvements in Semiconductor Devices.
GB1173150A (en) * 1966-12-13 1969-12-03 Associated Semiconductor Mft Improvements in Insulated Gate Field Effect Transistors
GB1261723A (en) * 1968-03-11 1972-01-26 Associated Semiconductor Mft Improvements in and relating to semiconductor devices
US3585463A (en) * 1968-11-25 1971-06-15 Gen Telephone & Elect Complementary enhancement-type mos transistors
US3654531A (en) * 1969-10-24 1972-04-04 Bell Telephone Labor Inc Electronic switch utilizing a semiconductor with deep impurity levels
US3600647A (en) * 1970-03-02 1971-08-17 Gen Electric Field-effect transistor with reduced drain-to-substrate capacitance
CH539360A (de) * 1971-09-30 1973-07-15 Ibm Halbleiterschalt- oder Speichervorrichtung
US4021835A (en) * 1974-01-25 1977-05-03 Hitachi, Ltd. Semiconductor device and a method for fabricating the same
US3912545A (en) * 1974-05-13 1975-10-14 Motorola Inc Process and product for making a single supply N-channel silicon gate device
US4053925A (en) * 1975-08-07 1977-10-11 Ibm Corporation Method and structure for controllng carrier lifetime in semiconductor devices
JPS5222480A (en) * 1975-08-14 1977-02-19 Nippon Telegr & Teleph Corp <Ntt> Insulating gate field effect transistor
JPS53141585A (en) * 1977-05-16 1978-12-09 Nec Corp Manufacture of insulating gate field effect type semiconductor device
JPS53142190A (en) * 1977-05-18 1978-12-11 Fujitsu Ltd Semiconductor device
US4132998A (en) * 1977-08-29 1979-01-02 Rca Corp. Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2954308A (en) * 1956-05-21 1960-09-27 Ibm Semiconductor impurity diffusion
US3449644A (en) * 1964-12-16 1969-06-10 Philips Corp Semiconductor device with inversion layer,underneath an oxide coating,compensated by gold dopant
DE2638867A1 (de) * 1976-08-28 1978-03-02 Licentia Gmbh Verfahren zum herstellen eines selbstleitenden mos-feldeffekttransistors

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN, Vol. 16, No. 11, Avril 1974, New York, US H.S. BHATIA et al. "Elimination of threshold voltage shift due to avalanche injection in high-performance field-effect transistors" pages 3606-3607 *
IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. ED-22, No. 1 Janvier 1975 New York, US M.E. SPROUL et al. "Temperature dependence of turn-on voltage of gold-doped MOSFETs" pages 8-14 *
JOURNAL OF APPLIED PHYSICS, Vol. 46, No. 1, Janvier 1975 New York, US T.F. LEE et al. "Investigation of tellerium-implanted silicon" pages 381-388 *
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONIC ENGINEERS, Vol. 56, No. 4, Avril 1968, New York US P. RICHMAN: "The effect of gold doping upon the characteristics of "MOS" field-effect transistors with applied substrate voltage", pages 774-776 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2550662A1 (fr) * 1983-08-12 1985-02-15 American Telephone & Telegraph Dispositif a effet de champ utilisant une condition de figeage des porteurs majoritaires
NL8402474A (nl) * 1983-08-12 1985-03-01 American Telephone & Telegraph Vaste-toestandsinrichting van het veldeffecttype.
GB2212326A (en) * 1987-06-03 1989-07-19 Mitsubishi Electric Corp Reduction of soft errors in semiconductor integrated circuit
US4894692A (en) * 1987-06-03 1990-01-16 Mitsubishi Denki Kabushiki Kaisha MESFET with alpha particle protection
GB2212326B (en) * 1987-06-03 1991-01-02 Mitsubishi Electric Corp A semiconductor integrated circuit

Also Published As

Publication number Publication date
DE2966452D1 (en) 1984-01-05
EP0012889A3 (en) 1981-12-30
JPH0158669B2 (de) 1989-12-13
US4274105A (en) 1981-06-16
IT1164542B (it) 1987-04-15
JPS5591875A (en) 1980-07-11
EP0012889B1 (de) 1983-11-30
IT7928136A0 (it) 1979-12-18
CA1130473A (en) 1982-08-24

Similar Documents

Publication Publication Date Title
EP0012889B1 (de) Vorrichtung zum Reduzieren der Empfindlichkeit der Schwellenspannung eines MOSFET oder eines MISFET gegen Schwankungen der am Substrat angelegten Spannung
EP0409746B1 (de) Integrierter VDMOS/Logikschaltkreis mit vertikalem Transistor vom Verarmungstyp und einer Zenerdiode
FR2490874A1 (fr) Transistors du type a grille isolee
FR2479567A1 (fr) Dispositif mosfet vertical avec une region d&#39;anode
FR2509931A1 (de)
FR2586862A1 (fr) Dispositif a semiconducteur en particulier du type mosfet.
FR2710191A1 (fr) MOSFET de puissance avec protection de sur-intensité et de surchauffe.
EP0000318A1 (de) Halbleiterdetektor für ein magnetisches oder elektrisches Feld
FR2700890A1 (fr) Dispositif à transistor composé à effet de champ ayant une électrode de Schottky.
FR2518816A1 (fr) Transistor a effet de champ metal-oxyde-semi-conducteur de puissance
EP0005183A1 (de) Halbleiterfeldeffekttransistor zum Detektieren eines Feldes, insbesondere eines magnetischen Feldes
FR2742933A1 (fr) Composant statique et monolithique limiteur de courant et disjoncteur
US4282539A (en) Field effect transistor with decreased substrate control of the channel width
FR2476914A1 (fr) Dispositif mosfet vertical avec electrode de blindage
FR2458907A1 (fr) Transistor a effet de champ a tension de seuil ajustable
FR2494040A1 (fr) Dispositif a circuits integres a semiconducteurs proteges contre les surtensions accidentelles
FR2545989A1 (fr) Transistor a effet de champ, fonctionnant en regime d&#39;enrichissement
EP0053013A2 (de) Nichtflüchtige Halbleiterspeicheranordnung
EP0162737B1 (de) Elektrisch löschbarer und wiederprogrammierbarer Speicherpunkt mit einem oberhalb von einem Steuergate angeordneten schwebenden Gate
FR2491678A1 (fr) Procede de fabrication d&#39;un transistor a effet de champ et dispositif obtenu selon ce procede
FR2550662A1 (fr) Dispositif a effet de champ utilisant une condition de figeage des porteurs majoritaires
EP0249287A1 (de) Differenzverstärkerschaltung und Regenerator für komplementäre Signale kleiner Amplitude
JP2626198B2 (ja) 電界効果トランジスタ
JPS6185868A (ja) 薄膜トランジスタ
JP3143102B2 (ja) Ｍｉｓ型トランジスタ

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Designated state(s): DE FR GB

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

17P Request for examination filed

Effective date: 19810828

AK Designated contracting states

Designated state(s): DE FR GB

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Designated state(s): DE FR GB

REF Corresponds to:

Ref document number: 2966452

Country of ref document: DE

Date of ref document: 19840105

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 19941124

Year of fee payment: 16

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 19941201

Year of fee payment: 16

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 19941220

Year of fee payment: 16

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Effective date: 19951204

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 19951204

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Effective date: 19960830

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Effective date: 19960903

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST