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DE69927199D1 - Nichtflüchtige Halbleiterspeicheranordnung - Google Patents

Nichtflüchtige Halbleiterspeicheranordnung

Info

Publication number
DE69927199D1
DE69927199D1 DE69927199T DE69927199T DE69927199D1 DE 69927199 D1 DE69927199 D1 DE 69927199D1 DE 69927199 T DE69927199 T DE 69927199T DE 69927199 T DE69927199 T DE 69927199T DE 69927199 D1 DE69927199 D1 DE 69927199D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
volatile
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69927199T
Other languages
English (en)
Other versions
DE69927199T2 (de
Inventor
Kazuyuki Yamashita
Kazuyuki Kusaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Electronics Corp filed Critical NEC Electronics Corp
Application granted granted Critical
Publication of DE69927199D1 publication Critical patent/DE69927199D1/de
Publication of DE69927199T2 publication Critical patent/DE69927199T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
DE69927199T 1998-03-24 1999-03-23 Nichtflüchtige Halbleiterspeicheranordnung Expired - Fee Related DE69927199T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7554698A JP3012589B2 (ja) 1998-03-24 1998-03-24 不揮発性半導体記憶装置
JP7554698 1998-03-24

Publications (2)

Publication Number Publication Date
DE69927199D1 true DE69927199D1 (de) 2005-10-20
DE69927199T2 DE69927199T2 (de) 2006-06-22

Family

ID=13579315

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69927199T Expired - Fee Related DE69927199T2 (de) 1998-03-24 1999-03-23 Nichtflüchtige Halbleiterspeicheranordnung

Country Status (7)

Country Link
US (1) US6026022A (de)
EP (1) EP0945874B1 (de)
JP (1) JP3012589B2 (de)
KR (1) KR100291633B1 (de)
CN (1) CN1109348C (de)
DE (1) DE69927199T2 (de)
MY (1) MY117042A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003077282A (ja) * 2001-08-31 2003-03-14 Fujitsu Ltd 不揮発性半導体記憶装置
JP3851865B2 (ja) 2001-12-19 2006-11-29 株式会社東芝 半導体集積回路
JP3816907B2 (ja) * 2003-07-04 2006-08-30 Ｎｅｃエレクトロニクス株式会社 表示データの記憶装置
US7092288B2 (en) * 2004-02-04 2006-08-15 Atmel Corporation Non-volatile memory array with simultaneous write and erase feature
CN100368990C (zh) * 2005-12-02 2008-02-13 浙江大学 利用定时器控制异步计算的指令的方法
CN101350222B (zh) * 2007-07-16 2010-10-13 盛群半导体股份有限公司 可擦洗可编程只读存储器之分页烧录装置及其控制方法
US10395752B2 (en) * 2017-10-11 2019-08-27 Globalfoundries Inc. Margin test for multiple-time programmable memory (MTPM) with split wordlines
CN112037833B (zh) * 2019-06-04 2023-06-06 华邦电子股份有限公司 电阻式存储器及其数据写入方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61276200A (ja) * 1985-05-31 1986-12-06 Fujitsu Ltd プログラマブルｒｏｍの書き込み方式
JPH0736274B2 (ja) * 1985-10-08 1995-04-19 日本電気株式会社 読出し専用メモリ
US4763305A (en) * 1985-11-27 1988-08-09 Motorola, Inc. Intelligent write in an EEPROM with data and erase check
JPS63251999A (ja) * 1987-04-08 1988-10-19 Mitsubishi Electric Corp 半導体記憶装置
JPH02146192A (ja) * 1988-11-28 1990-06-05 Nec Corp 電気的に消去及び書込可能な不揮発性メモリー
JP3010632B2 (ja) * 1989-02-27 2000-02-21 日本電気株式会社 電気的に消去及び書込み可能な不揮発性メモリー
US5363330A (en) * 1991-01-28 1994-11-08 Mitsubishi Denki Kabushiki Kaisha Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming
JP3236105B2 (ja) * 1993-03-17 2001-12-10 富士通株式会社 不揮発性半導体記憶装置及びその動作試験方法
JP3373632B2 (ja) * 1993-03-31 2003-02-04 株式会社東芝 不揮発性半導体記憶装置
JP2922116B2 (ja) * 1993-09-02 1999-07-19 株式会社東芝 半導体記憶装置
US5517453A (en) * 1994-09-15 1996-05-14 National Semiconductor Corporation Memory with multiple erase modes
KR0169418B1 (ko) * 1995-10-30 1999-02-01 김광호 페이지 소거시 데이터의 자기 보존회로를 가지는 불휘발성 반도체 메모리
US5777923A (en) * 1996-06-17 1998-07-07 Aplus Integrated Circuits, Inc. Flash memory read/write controller
JP3789977B2 (ja) * 1996-05-10 2006-06-28 株式会社ルネサステクノロジ 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
CN1229995A (zh) 1999-09-29
KR19990078171A (ko) 1999-10-25
DE69927199T2 (de) 2006-06-22
EP0945874B1 (de) 2005-09-14
EP0945874A2 (de) 1999-09-29
EP0945874A3 (de) 2000-07-12
KR100291633B1 (ko) 2001-05-15
JP3012589B2 (ja) 2000-02-21
US6026022A (en) 2000-02-15
CN1109348C (zh) 2003-05-21
MY117042A (en) 2004-04-30
JPH11273383A (ja) 1999-10-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee